# IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3366978RL/)

**URL**: https://novapart.co/products/STGB30H60DLFB/igbt-60-a-155-v-260-w-600-to-263-d2pak-3-pins
**SKU**: STGB30H60DLFB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2700
**Stock**: 500+
**Lead Time**: 274 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Product Range | 650V HB |
| Power Dissipation | 260W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3366978RL/)

**STGB30H60DLFB, STGW30H60DLFB** Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 

**Datasheet** - **production data** 

## **Features** 

- Designed for soft commutation only 

**==> picture [172 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>3<br>2<br>e @<br>D [2] PAK 1<br>TO-247<br>gure 1. Internal schematic diagramure 1. Internal schematic diagramgramram<br>C (2, TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


## **Figure 1. Internal schematic diagramure 1. Internal schematic diagramgramram** 

- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- VCE(sat) = 1.55 V (typ.) @ IC = 30 A 

- Low VF soft recovery co-packaged diode 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

- Lead free package 

## **Applications** 

- Microwave oven 

- Resonant converters 

## **Description** 

These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGB30H60DLFB|GB30H60DLFB|D2PAK|Tape and reel|
|STGW30H60DLFB|GW30H60DLFB|TO-247|Tube|



July 2014 

DocID026409 Rev 2 

1/20 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STGB30H60DLFB, STGW30H60DLFB** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
||4.1<br>D2PAK, STGB30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
||4.2<br>TO-247, STGW30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|



2/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

||**Table 2. Absolute maximum ratingsgss**|||
|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**|**Value**|**Unit**|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|600|V|
|IC<br>~~a~~|Continuous collector current at TC= 25 °C|60|A|
|IC<br>~~a~~|Continuous collector current at TC= 100 °C|30|A|
|ICP<br>(1)<br>~~a——————~~|Pulsed collector current<br>~~——————~~|120<br>~~——————~~|A<br>~~——————~~|
|IF<br>~~——————~~|Continuous forward current TC= 25 °C<br>~~——————~~|60<br>~~——————~~|A<br>~~——————~~|
||Continuous forward current TC= 25 °C<br>~~——————~~<br>~~a~~|30<br>~~——————~~<br>~~a~~|A<br>~~——————~~<br>~~a~~|
|IFP<br>(1)<br>~~——————~~<br>~~a~~|Pulsed forward current<br>~~——————~~|120<br>~~——————~~|A<br>~~——————~~|
|VGE<br>~~a~~|Gate-emitter voltage|±20|V|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|260|W|
|TSTG<br>~~a~~|Storage temperature range|- 55 to 150|°C|
|TJ<br>~~a~~|Operating junction temperature|- 55 to 175|°C|



1. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK**|**TO-247**||
|RthJC|Thermal resistance junction-case IGBT|0.58||°C/W|
||Thermal resistance junction-case diode|2.08||°C/W|
|RthJA|Thermal resistance junction-ambient|62.5|50|°C/W|



DocID026409 Rev 2 

3/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

**Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit** Collector-emitter V(BR)CES breakdown voltage IC = 2 mA 600 V (VGE = 0) ~~eea~~ VGE = 15 V, IC = 30 A 1.55 2 ~~ee~~ Collector-emitter saturation VGE = 15 V, IC = 30 A 1.65 VCE(sat) voltage TJ = 125 °C V VGE = 15 V, IC = 30 A 1.75 TJ = 175 °C ~~|) UEFre~~ ~~**e** ee~~ IF = 30 A 1.4 1.7 ~~eeee eee~~ VF Forward on-voltage IF = 30 A TJ = 125 °C 1.2 V IF = 30 A TJ = 175 °C 1.05 ~~ee~~ VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ~~ee esees~~ ~~**e** e eGe eeee~~ Collector cut-off current ICES (VGE = 0) VCE = 600 V 25 µA ~~a~~ Gate-emitter leakage IGES current (VCE = 0) VGE = ± 20 V 250 nA ~~ee~~ 

**Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|3659|-|pF|
|Coes|Output capacitance||-|101|-|pF|
|Cres|Reverse transfer<br>capacitance||-|76|-|pF|
|Qg|Total gate charge|VCC= 520 V, IC= 30 A,<br>VGE= 15 V, see_Figure 26_|-|149|-|nC|
|Qge|Gate-emitter charge||-|25|-|nC|
|Qgc|Gate-collector charge||-|62|-|nC|



4/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load)** 

**Symbol Parameter Test conditions Min. Typ. Max. Unit** td(off) Turn-off delay time VCE = 400 V, IC = 30 A, 146 - ns tf Current fall time RG = 10 Ω , VGE = 15 V, - 23 - ns Eoff(1) Turn-off switching losses see _Figure 25_ - 293 - µJ td(off) Turn-off delay time VCE = 400 V, IC = 30 A, - 158 - ns tf Current fall time RG = 10 Ω , VGE = 15 V, - 65 - ns Eoff(1) Turn-off switching losses TJ = 175 °C, see _Figure 25_ - 572 - µJ ~~=~~ 1. Turn-off losses include also the tail of the collector current. **Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions Min. Typ. Max. Unit** VCC = 320 V, VGE = 150 V, RG =20 Ω , IC = 30 A, - 150 - L = 100 µH, Csnub = 20 nF (see _Figure 25_ ) Eoff(1) Turn-off switching losses VCC = 320 V, VGE = 150 V, µJ RG =20 Ω , IC = 30 A, L = 100 µH, Csnub = 20 nF, - 300 - TJ = 175 °C (see _Figure 25_ ) ~~(LAH~~ 1. Turn-off losses include also the tail of the collector current. 

DocID026409 Rev 2 

5/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curve)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

**==> picture [424 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141353FSR GIPG280120141346FSR<br>Ptot IC<br>(W) (A)<br>60<br>250<br>200<br>40<br>150<br>100<br>20<br>50<br>VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C<br>0 0<br>0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 TC(°C)<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics (TJ = 25°C)** 

**==> picture [195 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141156FSR<br>IC<br>(A)<br>VGE =15 V 13V<br>100<br>11V<br>9V<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


## **Figure 5. Output characteristics (TJ = 175°C)** 

**==> picture [195 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141206FSR<br>IC<br>(A)<br>VGE =15 V<br>13V<br>100<br>11V<br>9V<br>80<br>60<br>40<br>20<br>7V<br>0<br>0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


## **Figure 6. VCE(sat) vs. junction temperature** 

**==> picture [203 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141440FSR<br>VCE(sat)<br>(V) VGE= 15V<br>2.2<br>IC= 60A<br>2.0<br>1.8<br>1.6 IC= 30A<br>1.4<br>IC= 15A<br>1.2<br>-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 7. VCE(sat) vs. collector current** 

**==> picture [204 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141446FSR<br>VCE(sat)<br>(V) VGE= 15V<br>2.2<br>2.0<br>TJ= 175°C<br>1.8<br>TJ= 25°C<br>1.6<br>TJ= -40 ° C<br>1.4<br>1.2<br>0 20 30 40 50 IC(A)<br>**----- End of picture text -----**<br>


DocID026409 Rev 2 

6/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 9. Forward bias safe operating area** 

**==> picture [423 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG260620141544FSR GIPG280120141450FSR<br>Ic [A] IC<br>(A)<br>60<br>Tc=80°C<br>100<br>50<br>40 Tc=100  [°] C 10 μs<br>10<br>100 μs<br>30<br>1 ms<br>20<br>1<br>rectangular current shape,<br>10 (duty cycle=0.5, VCC = 400V, RG=10 Ω, (single pulse T C = 25°C,<br>VGE = 0/15 V, TJ =175°C) TJ ≤ 175 °C; VGE=15V)<br>0 0.1<br>1 10 f [kHz]  1 10 100 VCE(V)<br>Vce(sat) limit<br>**----- End of picture text -----**<br>


**Figure 10. Transfer characteristics** 

**Figure 11. Diode VF vs. forward current** 

**==> picture [426 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141330FSR GIPG260620141554FSR<br>IC VF (V)<br>(A) 25 °C<br>VCE =10 V<br>175 °C TJ= -40°C<br>100<br>2.0<br>| -<br>80<br>1.6 TJ= 25°C<br>60<br>1.2<br>40<br>TJ= 175°C<br>0.8<br>20<br>0<br>7 9 11 13 VGE(V) 0.410 20 30 40 50 IF(A)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized VGE(th) vs junction temperature** 

**Figure 13. Normalized V(BR)CES vs. junction temperature** 

**==> picture [429 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16060v1 AM16059v1<br>VGE(th) V(BR)CES<br>(norm) (norm)<br>VCE= VGE 1.1 IC= 2mA<br>IC= 1mA<br>1.0<br>0.9<br>1.0<br>0.8<br>0.7<br>0.6 0.9<br>-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


DocID026409 Rev 2 

7/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

**Figure 14. Capacitance variation** 

**Figure 15. Gate charge vs. gate-emitter voltage** 

**==> picture [423 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141707FSR GIPG280120141455FSR<br>C(pF) VGE<br>(V)16 VCC= 520V, IC= 30A<br>Cies IG= 1mA<br>14<br>1000 12<br>10<br>8<br>100 6<br>4<br>Coes<br>2<br>Cres<br>10<br>0.1 1 10 100 VCE(V) 00 40 80 120 160 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 16. Switching loss vs collector current** 

**Figure 17. Switching loss vs gate resistance** 

**==> picture [424 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141606FSR GIPG280120141536FSR<br>E (μJ) E (μJ)<br>VCC= 400V, VGE= 15V V CC = 400V, V GE = 15V<br>1200 R g = 10Ω, T J = 175°C 1000 IC= 30A, TJ= 175  ° C<br>1000 EOFF<br>EOFF 900<br>800<br>800<br>600<br>700<br>400<br>200 600<br>00 20 40 60 IC(A) 5000 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 18. Switching loss vs temperature** 

**Figure 19. Switching loss vs collector-emitter voltage** 

**==> picture [417 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141532FSR GIPG280120141610FSR<br>E (μJ) E (μJ)<br>VCC= 400V, VGE= 15V TJ= 175°C, VGE= 15V<br>Rg= 10Ω, IC= 30A Rg= 10Ω, IC= 30A<br>800<br>EOFF<br>600<br>EOFF<br>600<br>400<br>400<br>200<br>200<br>0 0<br>20 40 60 80 100 120 140 160 TJ(°C) 150 250 350 450 VCE(V)<br>**----- End of picture text -----**<br>


8/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

**Figure 20. Switching times vs. collector current** 

## **Figure 21. Switching times vs. gate resistance** 

**==> picture [417 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
t GIPG300620141033FSR t GIPG300620141039FSR<br>(ns) (ns) °<br>TJ= 175°C, VGE= 15V,  TJ= 175 C, VGE= 15V,<br>RG= 10Ω, VCC= 400V IC= 30A, VCC= 400V<br>tdoff<br>t doff<br>100<br>100<br>tf tf<br>10 10<br>0 10 20 30 40 50 IC(A) 0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 22. Switching-off losses vs. capacitive load** 

**==> picture [187 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoff GIPG300620141047FSR<br>(μJ)<br>L snub = 100μH, V GE = 15V,<br>300 IC= 30A, VCC= 320V<br>250<br>TJ= 175°C<br>200<br>150<br>T J = 25°C<br>100<br>50<br>0 20 40 60 80 C(nF)<br>**----- End of picture text -----**<br>


DocID026409 Rev 2 

9/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Electrical characteristics** 

**==> picture [295 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. Thermal impedance for IGBT<br>ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2<br>10 fo<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


**Figure 24. Thermal impedance for diode** 

10/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Test circuits** 

## **3 Test circuits** 

**Figure 25. Test circuit for inductive load Figure 26. Gate charge test circuit switching** 

**==> picture [261 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
k<br>k<br>12V i 47 Q } t o<br>100n F<br>Voc _<br>| G=CONST<br>V,~T = 2 0V=Vey 52 00 ae CO} o k e QP DOT<br>k<br>_ | 47aa k Q °<br>JL c c<br>Py 1 k 0<br>AM01504v1 AM01505v1<br>**----- End of picture text -----**<br>


**Figure 27. Switching waveform** 

**Figure 28. Diode reverse recovery waveform** 

**==> picture [452 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% di/dt Qrr<br>VG _f Xe 10% IF trr<br>90%<br>ts tf<br>VCE f F at foF Tr(Voff) *e 10% iNa<br>| Tcross t<br>90%<br>IRRM IRRM<br>IC Td(on)Ton Tr(Ion ===> ) Td(offToff) Tf _ 10% CHUa 2 5% VRRM<br>dv/dt<br>AM01506v1 AM01507v1<br>**----- End of picture text -----**<br>


DocID026409 Rev 2 

11/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 D[2] PAK, STGB30H60DLFB** 

**Figure 29. D²PAK (TO-263) drawing** 

**==> picture [29 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_U<br>**----- End of picture text -----**<br>


12/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Package mechanical data** 

**Table 8. D²PAK (TO-263) mechanical data** 

||**Table 8. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 8. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 8. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.40|~~ee ~~|4.60<br> ~~ee~~|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~|1.14||1.70|
|c<br>~~a~~|0.45||0.60|
|c2<br>~~a~~<br>~~es~~|1.23||1.36|
|D<br>~~es~~|8.95||9.35|
|D1<br>~~es~~<br>~~a~~|7.50|7.75|8.00|
|D2<br>~~a~~|1.10|1.30|1.50|
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~|8.50|8.70|8.90|
|E2<br>~~a~~<br>~~es~~|6.85|7.05|7.25|
|e<br>~~es~~||2.54||
|e1<br>~~es~~<br>~~a~~|4.88||5.28|
|H<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~<br>~~es~~|1.27||1.40|
|L2<br>~~es~~|1.30||1.75|
|R<br>~~es~~<br>~~a~~||0.4||
|V2<br>~~a~~|0°||8°|



DocID026409 Rev 2 

13/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Package mechanical data** 

**==> picture [386 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 30. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>_— 1.60<br>o_ o<br>|<br>Co 3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters. 

14/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Package mechanical data** 

## **4.2 TO-247, STGW30H60DLFB** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 31. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


DocID026409 Rev 2 

15/20 

**STGB30H60DLFB, STGW30H60DLFB** 

**Package mechanical data** 

**Table 9. TO-247 mechanical data** 

||**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



16/20 

DocID026409 Rev 2 

**STGB30H60DLFB, STGW30H60DLFB** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 32. Tape** 

**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>H e | I<br>| / 000 00 000 0 00 E<br>F<br>K0 W<br>B1 B0<br>| H ) PRG<br>‘l Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ><br>User direction of feed<br>R<br>\a he e/* ¢, /¢ / % / % F/% F<br>BGs<br>es es es Se en ns Sn Sen 5<br>——_—_p»> Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

**==> picture [377 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 33. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A At slot location<br>B<br>D<br>Q<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>Vv tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 10. D²PAK (TO-263) tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~A~~|**mm**<br>**Min.**<br>**Max.**<br>~~ee ~~<br>~~eeee~~||**Dim.**<br> ee<br>~~ee~~|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~ee~~|||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~A~~|10.5<br>|10.7<br>~~ee~~|A<br>~~ee~~||330|
|B0<br>~~a~~|15.7|15.9|B|1.5||
|D<br>~~a~~|1.5|1.6|C|12.8|13.2|
|D1<br>~~a~~|1.59<br>~~ee~~|1.61<br>~~ee~~|D<br>~~ee~~|20.2<br>~~ee~~|~~ee~~|
|E<br>~~a~~|1.65|1.85|G|24.4|26.4|
|F<br>~~a~~|11.4|11.6|N|100||
|K0<br>~~a~~|4.8|5.0|T||30.4|
|P0<br>~~a~~|3.9|4.1||||
|P1<br>~~a~~|11.9|12.1|Base qty||1000|
|P2<br>~~a~~|1.9<br>|2.1<br><br>~~ee~~|Bulk qty||1000|
|R<br>~~ee~~|50<br>~~ee~~|0.35<br>24.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~pp~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|||||
|W<br>~~pp~~|23.7<br>~~pp~~|||||



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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Jul-2014|1|Initial release.|
|23-Jul-2014|2|Document status promoted from preliminary data to production data|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

20/20 DocID026409 Rev 2 



## Links

- [View this product on Novapart](https://novapart.co/products/STGB30H60DLFB/igbt-60-a-155-v-260-w-600-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgb30h60dlfb/igbt-600v-60a-175deg-c-260w/dp/3366978RL)
---

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