# IGBT, 40 A, 1.3 V, 200 W, 412 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2353662RL/)

**URL**: https://novapart.co/products/STGB20NB41LZT4/igbt-40-a-13-v-200-w-412-to-263-d2pak-3-pins
**SKU**: STGB20NB41LZT4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2400
**Stock**: 500+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:412V; Transistor Case Style:TO-263; No. of Pi

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2353662RL/)

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## **STGB20NB41LZ** 

## N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™IGBT 

|**TYPE**|**VCES**|**VCE(sat)**|**IC**|
|---|---|---|---|
|STGB20NB41LZ|CLAMPED|< 2.0 V|20 A|



- I POLYSILICON GATE VOLTAGE DRIVEN 

- I LOW THRESHOLD VOLTAGE 

- I LOW ON-VOLTAGE DROP 

- I LOW GATE CHARGE 

- I HIGH CURRENT CAPABILITY 

- I HIGH VOLTAGE CLAMPING FEATURE 

## **DESCRIPTION** 

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH[™] IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. 

## **APPLICATIONS** 

I AUTOMOTIVE IGNITION 

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3<br>1<br>D²PAK<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

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## **ORDER CODE** 

|**ORDER CODE**||||
|---|---|---|---|
|**PART NUMBER**|**MARKING**|**PACKAGE**|**PACKAGING**|
|STGB20NB41LZT4|GB20NB41LZ|D2PAK|TAPE & REEL|



April 2004 

1/9 

## **STGB20NB41LZ** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-Emitter Voltage (VGS= 0)|CLAMPED|V|
|VECR|Emitter-Collector Voltage|20|V|
|VGE|Gate-Emitter Voltage|CLAMPED|V|
|IC|Collector Current (continuous) at TC= 25°C|40|A|
|IC|Collector Current (continuous) at TC= 100°C|20|A|
|ICM(�)|Collector Current (pulsed)|80|A|
|Eas|Single Pulse Energy Tc = 25°C|700|mJ|
|PTOT|Total Dissipation at TC= 25°C|200|W|
||Derating Factor|1.33|W/°C|
|ESD|ESD (Human Body Model)|8|KV|
|Tstg|Storage Temperature|– 55 to 175|°C|
|Tj|Operating Junction Temperature|||



(�) Pulse width limited by safe operating area 

## **THERMAL DATA** 

|Rthj-case|Thermal Resistance Junction-case Max|0.75|°C/W|
|---|---|---|---|
|Rthj-amb|Thermal Resistance Junction-ambient Max|62.5|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF 

|<br>OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BV(CES)|Clamped Voltage|IC= 2 mA, VGE= 0,<br>Tc= - 40°C÷150°C|382|412|442|V|
|BV(ECR)|Emitter Collector Break-down<br>Voltage|IC= 75 mA, Tc= 25°C|20|28||V|
|BVGE|Gate Emitter Break-down<br>Voltage|IG= ± 2 mA|12|14|16|V|
|ICES|Collector cut-off Current<br>(VGE= 0)|VCE= 15 V, VGE= 0 ,TC= 150 °C<br>VCE=200 V, VGE= 0 ,TC= 150°C|||10<br>100|µA<br>µA|
|IGES|Gate-Emitter Leakage<br>Current (VCE= 0)|VGE= ± 10V , VCE= 0|± 300|± 660|±<br>1000|µA|
|RGE|Gate Emitter Resistance||10|15|30|KΩ|



## ON (1) 

|ON (1)|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGE(th)|Gate Threshold Voltage|VCE= VGE, IC= 250µA, Tc=25°C|1||2.4|V|
|VCE(SAT)|Collector-Emitter Saturation<br>Voltage|VGE= 4.5V, IC= 10 A, Tc= 25°C<br>VGE= 4.5V, IC= 20 A, Tc= 25°C||1.1<br>1.3|1.8<br>2.0|V<br>V|



2/9 

**STGB20NB41LZ** 

## DYNAMIC 

|DYNAMIC||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**||
|gfs|Forward Transconductance|VCE= 25 V ,IC=20 A||35||S||
|Cies<br>Coes<br>Cres|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VCE= 25V, f = 1 MHz, VGE= 0||2300<br>160<br>25||pF<br>pF<br>pF||
|Qg|Gate Charge|VCE= 320V, IC = 20 A,<br>VGE= 5V||46||nC||
|**FUNCTIONAL CHARACTERISTICS**||||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**||**Unit**|
|II|Latching Current|VClamp = 320 V, TC= 125 °C<br>RGOFF= 1KΩ, VGE= 10 V||40|||A|
|U.I.S.|Functional Test Open<br>Secondary Coil|RGOFF=1KΩ, L = 1.6mH,<br>Tc=125°C|20||||A|



## SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VCC= 320 V, IC= 20 A<br>RG= 1KΩ, VGE= 5 V||1<br>0.22||µs<br>µs|
|(di/dt)on|Turn-on Current Slope|VCC= 320 V, IC= 20 A<br>RG=1KΩ, VGE= 5 V||140||A/µs|
|Eon|Turn-on Switching Losses|VCC= 320 V, IC= 20 A, Tc=25°C<br>RG=1KΩ, VGE= 5 V, Tc=150°C||5<br>5.1||mJ<br>mJ|
|SWITCHING OFF|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|tc<br>tr(Voff)<br>td(off)<br>tf<br>Eoff(**)|Cross-over Time<br>Off Voltage Rise Time<br>Delay Time<br>Fall Time<br>Turn-off Switching Loss|Vcc = 320 V, IC= 20 A,<br>RGE= 1KΩ, VGE= 5 V||4.4<br>2.5<br>12.1<br>1.6<br>12.9||µs<br>µs<br>µs<br>µs<br>mJ|
|tc<br>tr(Voff)<br>td(off)<br>tf<br>Eoff(**)|Cross-over Time<br>Off Voltage Rise Time<br>Delay Time<br>Fall Time<br>Turn-off Switching Loss|Vcc = 320 V, IC= 20 A,<br>RGE= 1 KΩ, VGE= 5 V<br>Tj = 125 °C||6<br>3.16<br>13.4<br>2.7<br>18.4||µs<br>µs<br>µs<br>µs<br>mJ|



(1)Pulse width limited by max. junction temperature. 

(**)Losses Include Also the Tail 

3/9 

**STGB20NB41LZ** 

**Output Characteristics** 

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**Normalized Gate Threshold Voltage vs Temp.** 

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**Normalized Collector-Emitter On Voltage vs Temperature** 

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## **Transfer Characteristics** 

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**Transconductance** 

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**Normalized Collector-Emitter On Voltage vs Gate-Emitter Voltage** 

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4/9 

**STGB20NB41LZ** 

## **Capacitance Variations** 

## **Off Losses vs Gate Resistance** 

**Normalized Break-down Voltage vs Temp.** 

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**Gate Charge vs Gate-Emitter Voltage** 

## **Off Losses vs Collector Current** 

## **Normalized BVGE vs Temperature** 

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5/9 

**STGB20NB41LZ** 

## **Off Losses vs Temperature** 

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## **Switching Off Safe Operating Area** 

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## **Thermal Impedance** 

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6/9 

**STGB20NB41LZ** 

||**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.4||4.6|0.173||0.181|
|A1|2.49||2.69|0.098||0.106|
|A2|0.03||0.23|0.001||0.009|
|B|0.7||0.93|0.027||0.036|
|B2|1.14||1.7|0.044||0.067|
|C|0.45||0.6|0.017||0.023|
|C2|1.23||1.36|0.048||0.053|
|D|8.95||9.35|0.352||0.368|
|D1||8|||0.315||
|E|10||10.4|0.393|||
|E1||8.5|||0.334||
|G|4.88||5.28|0.192||0.208|
|L|15||15.85|0.590||0.625|
|L2|1.27||1.4|0.050||0.055|
|L3|1.4||1.75|0.055||0.068|
|M|2.4||3.2|0.094||0.126|
|R||0.4|||0.015||
|V2|0º||8º||||



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3<br>**----- End of picture text -----**<br>


7/9 

**STGB20NB41LZ** 

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**----- Start of picture text -----**<br>
D [2] PAK FOOTPRINT<br>**----- End of picture text -----**<br>


## **TUBE SHIPMENT (no suffix)*** 

## **TAPE AND REEL SHIPMENT (suffix ”T4”)*** 

|||||||||REEL MECHANICAL DATA|REEL MECHANICAL DATA|REEL MECHANICAL DATA|
|---|---|---|---|---|---|---|---|---|---|---|
|i|40 mm min<br>Access hole<br>=ae at slot location||es aT|||||**DIM.**|**mm**<br>**inch**<br>**MIN.**<br>**MAX.**<br>**MIN.**<br>**MAX.**||
|||||||||A||330<br>12.992|
|**DIM.**<br>**mm**<br>**inch**<br>**MIN.**<br>**MAX.**<br>**MIN.**<br>**MAX.**<br>A0<br>10.5<br>10.7<br>0.413<br>0.421<br>TAPE MECHANICAL DATA<br>!<br>' oo Sy<br>\<br>"|<br>A<br>|<br>rem Os<br>4",<br>|<br>|<br>= —~ Eo : A<br>}<br>i<br>1<br>~<br>af<br>\<br>Full radius<br>/ Teeri<br>S<br>/ 90aa<br>'<br>ae<br>a 2mm min<br>——<br>width<br>~~—_——~~<br>~~eee~~||||<br>t<br>1p<br>t<br>G <br>at <br>.||measured<br> hut||B<br>1.5<br>0.059<br>C<br>12.8<br>13.2<br>0.504<br>0.520<br>D<br>20.2<br>0795<br>G<br>24.4<br>26.4<br>0.960<br>1.039<br>N<br>100<br>3.937<br>T<br>30.4<br>1.197<br>**BASE QTY**<br>**BULK QTY**<br>1000<br>1000<br>~~———~~<br>.<br>«pices oenlathin||||
|B0|15.7<br>15.9<br>0.618<br>0.626||||||||||
|D|1.5<br>1.6<br>0.059<br>0.063||||||||||
|D1|1.59<br>1.61<br>0.062<br>0.063||||Z|of|-||||<br>*|
|E|1.65<br>1.85<br>0.065<br>0.073||||||||||
|F|11.4<br>11.6<br>0.449<br>0.456||||||||||
|K0<br>4.8<br>5.0<br>0.189<br>0.197<br>P0<br>3.9<br>4.1<br>0.153<br>0.161<br>~~ee ee eee eee~~||||||||—s|ane<br>ofcavity||
|P1<br>11.9<br>12.1<br>0.468<br>0.476<br>P2<br>1.9<br>2.1<br>0.075<br>0.082<br>R<br>50<br>1.574<br>T<br>0.25<br>0.35<br>0.0098 0.0137<br>TRL<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>FTl) Lea<br>a<br>~~oo~~o||||||||||sh,<br>Pin<br>—"|
|W|23.7<br>24.3<br>0.933<br>0.956||||||||||



* on sales type ~~©~~ 8/9 

**STGB20NB41LZ** 

**Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.** 

**The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners** 

**© 2004 STMicroelectronics - All Rights Reserved** 

**STMicroelectronics GROUP OF COMPANIES** 

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9/9 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgb20nb41lzt4/igbt-single-412kv-40a-to-263-3/dp/2353662RL)
---

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