# IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pins
**URL**: https://novapart.co/products/STGB10M65DF2/igbt-20-a-155-v-115-w-650-to-263-d2pak-3-pins
**SKU**: STGB10M65DF2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7060
**Stock**: 50+
**Lead Time**: 120 days (indicative)
## Description
DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:115W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pi
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 115W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2490227RL/)
## **STGB10M65DF2**
## Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package
Datasheet - production data
## **Features**
**==> picture [79 x 100] intentionally omitted <==**
**----- Start of picture text -----**
TAB
2
3
1
D²PAK
**----- End of picture text -----**
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
## **Applications**
- Motor control
**Figure 1: Internal schematic diagram**
- UPS
- PFC
- General purpose inverter
## **Description**
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGB10M65DF2|G10M65DF2|D²PAK|Tape and reel|
April 2017
DocID027429 Rev 6
1/19
This is information on a product in full production.
_www.st.com_
|**Contents**
**STGB10M65DF2**|**Contents**
**STGB10M65DF2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 12**|
|**4**|**Package information ..................................................................... 13**|
||4.1
D²PAK package information ............................................................ 13|
||4.2
D2PAK packing information ............................................................. 16|
|**5**|**Revision history ............................................................................ 18**|
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**STGB10M65DF2**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|20|A|
||Continuous collector current at TC= 100 °C|10||
|ICP_(1)_|Pulsed collector current|40|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|20|A|
||Continuous forward current at TC= 100 °C|10||
|IFP_(1)_|Pulsed forward current|40|A|
|PTOT|Total dissipation at TC= 25 °C|115|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|1.3|°C/W|
|RthJC|Thermal resistancejunction-case diode|2.08||
|RthJA|Thermal resistance junction-ambient|62.5||
DocID027429 Rev 6
3/19
**STGB10M65DF2**
**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 250 μA|650|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 10 A||1.55|2.0|V|
|||VGE= 15 V, IC= 10 A,
TJ= 125 °C||1.9|||
|||VGE= 15 V, IC= 10 A,
TJ= 175 °C||2.1|||
|VF|Forward on-voltage|IF= 10 A||1.5|2.25|V|
|||IF= 10 A, TJ= 125 °C||1.3|||
|||IF= 10 A, TJ= 175 °C||1.2|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250µA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ± 20 V|||±250|µA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|840|-|pF|
|Coes|Output capacitance||-|63|-||
|Cres|Reverse transfer capacitance||-|16|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 10 A,
VGE= 0 to 15 V
(see_Figure 30: " Gate_
_charge test circuit"_)|-|28|-|nC|
|Qge|Gate-emitter charge||-|6|-||
|Qgc|Gate-collector charge||-|12|-||
4/19
DocID027429 Rev 6
**STGB10M65DF2**
**Electrical characteristics**
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 10 A,
VGE= 15 V, RG= 22 Ω
(see_Figure 29: " Test_
_circuit for inductive load_
_switching"_)||19|-|ns|
|tr|Current rise time|||7.4|-|ns|
|(di/dt)on|Turn-on current slope|||1086|-|A/µs|
|td(off)|Turn-off-delaytime|||91|-|ns|
|tf|Current fall time|||92|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.12|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.27|-|mJ|
|Ets|Total switchingenergy|||0.39|-|mJ|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 10 A,
VGE= 15 V, RG= 22 Ω,
TJ= 175 °C
(see_Figure 29: " Test_
_circuit for inductive load_
_switching"_)||18|-|ns|
|tr|Current rise time|||9|-|ns|
|(di/dt)on|Turn-on current slope|||890|-|A/µs|
|td(off)|Turn-off-delaytime|||90|-|ns|
|tf|Current fall time|||170|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.26|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.4|-|mJ|
|Ets|Total switchingenergy|||0.66|-|mJ|
|tsc|Short-circuit withstand time|VCC≤ 400 V, VGE= 13 V,
TJstart= 150 °C|10||-|µs|
|||VCC≤ 400 V, VGE= 15 V,
TJstart= 150 °C|6||-|µs|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 10 A, VR= 400 V,
VGE= 15 V,
di/dt = 1000 A/µs
(see_Figure 29: " Test_
_circuit for inductive load_
_switching"_)|-|96|-|ns|
|Qrr|Reverse recoverycharge||-|373|-|nC|
|Irrm|Reverse recoverycurrent||-|13|-|A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|661|-|A/µs|
|Err|Reverse recoveryenergy||-|52|-|µJ|
|trr|Reverse recoverytime|IF= 10 A, VR= 400 V,
VGE= 15 V,
di/dt = 1000 A/μs,
TJ= 175 °C
(see_Figure 29: " Test_
_circuit for inductive load_
_switching"_)|-|201|-|ns|
|Qrr|Reverse recovery charge||-|1352|-|nC|
|Irrm|Reverse recoverycurrent||-|19|-|A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|405|-|A/µs|
|Err|Reverse recoveryenergy||-|150|-|µJ|
DocID027429 Rev 6
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**STGB10M65DF2**
**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**==> picture [458 x 192] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature
**----- End of picture text -----**
**Figure 4: Output characteristics (TJ = 25 °C)**
**==> picture [178 x 164] intentionally omitted <==**
**Figure 5: Output characteristics (TJ = 175 °C)**
**==> picture [178 x 164] intentionally omitted <==**
**Figure 6: VCE(sat) vs. junction temperature**
**==> picture [193 x 163] intentionally omitted <==**
**Figure 7: VCE(sat) vs. collector current**
**==> picture [186 x 164] intentionally omitted <==**
6/19 DocID027429 Rev 6
**STGB10M65DF2**
**Electrical characteristics**
**Figure 8: Collector current vs. switching frequency**
**==> picture [180 x 170] intentionally omitted <==**
**Figure 9: Forward bias safe operating area**
**==> picture [189 x 156] intentionally omitted <==**
**Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current**
**==> picture [186 x 172] intentionally omitted <==**
**==> picture [173 x 163] intentionally omitted <==**
**==> picture [463 x 203] intentionally omitted <==**
**----- Start of picture text -----**
Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction
temperature
**----- End of picture text -----**
DocID027429 Rev 6
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**==> picture [474 x 205] intentionally omitted <==**
**----- Start of picture text -----**
Electrical characteristics STGB10M65DF2
Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage
**----- End of picture text -----**
**Figure 16: Switching energy vs. collector current**
**==> picture [176 x 167] intentionally omitted <==**
**Figure 17: Switching energy vs. gate resistance**
**==> picture [176 x 162] intentionally omitted <==**
**Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage**
**==> picture [179 x 165] intentionally omitted <==**
**==> picture [178 x 163] intentionally omitted <==**
8/19
DocID027429 Rev 6
**STGB10M65DF2**
**Electrical characteristics**
**Figure 20: Short-circuit time and current vs. VGE**
**==> picture [175 x 160] intentionally omitted <==**
**Figure 21: Switching times vs. collector current**
**==> picture [169 x 161] intentionally omitted <==**
**==> picture [452 x 207] intentionally omitted <==**
**----- Start of picture text -----**
Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode
current slope
**----- End of picture text -----**
**Figure 24: Reverse recovery time vs. diode current Figure 25: Reverse recovery charge vs. diode slope current slope**
**==> picture [187 x 161] intentionally omitted <==**
**==> picture [189 x 166] intentionally omitted <==**
DocID027429 Rev 6
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**STGB10M65DF2**
**Electrical characteristics**
**Figure 26: Reverse recovery energy vs. diode current slope**
**==> picture [168 x 142] intentionally omitted <==**
**==> picture [269 x 277] intentionally omitted <==**
**----- Start of picture text -----**
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t
Single pulse tp
t
-2
10
10-5 10 -4 10-3 10 -2 10 -1 tp [(s)]
**----- End of picture text -----**
10/19
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**STGB10M65DF2**
**Electrical characteristics**
**Figure 28: Thermal impedance for diode**
**==> picture [263 x 255] intentionally omitted <==**
DocID027429 Rev 6
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**STGB10M65DF2**
**Test circuits**
## **3 Test circuits**
**==> picture [429 x 192] intentionally omitted <==**
**----- Start of picture text -----**
Figure 29: Test circuit for inductive load Figure 30: Gate charge test circuit
switching
A A
C
G L=100 µH
E B
B
C 3.3µF 1000µF VCC
G D.U.T
+ RG E
-
AM01504v1
**----- End of picture text -----**
**Figure 31: Switching waveform**
**Figure 32: Diode reverse recovery waveform**
**==> picture [160 x 78] intentionally omitted <==**
**==> picture [209 x 127] intentionally omitted <==**
**----- Start of picture text -----**
di/dt Qrr
IF ts trr tf
IRRM t
10%
IRRM
VRRM
dv/dt
AM01507v1
**----- End of picture text -----**
12/19
DocID027429 Rev 6
**STGB10M65DF2**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 D²PAK package information**
**Figure 33: D²PAK (TO-263) type A package outline**
**==> picture [408 x 360] intentionally omitted <==**
DocID027429 Rev 6
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**STGB10M65DF2**
**Package information**
**Table 8: D²PAK (TO-263) type A package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.40||
|V2|0°||8°|
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**Package information**
**Figure 34: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)**
DocID027429 Rev 6
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**STGB10M65DF2**
**Package information**
## **4.2 D[2] PAK packing information**
**Figure 35: D[2] PAK type A tape outline**
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DocID027429 Rev 6
**STGB10M65DF2**
**Package information**
**Figure 36: D[2] PAK type A reel outline**
**Table 9: D²PAK type A tape and reel mechanical data**
|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||
DocID027429 Rev 6
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**STGB10M65DF2**
**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Feb-2015|1|First release.|
|23-Apr-2015|2|Minor text edits throughout document
In Section 2 Electrical characteristics:
- updated Table 4: Static characteristics
- updated Table 5: Dynamic characteristics
- updated Table 6: IGBT switching characteristics (inductive load)
- updated Table 7: Diode switching characteristics (inductive load)
Added Section 2.1 Electrical characteristics (curves)|
|11-Jun-2015|3|Document statuspromoted frompreliminarytoproduction data.|
|31-Jul-2015|4|Updated table titled: "Diode switchingcharacteristics (inductive load)".|
|20-Oct-2015|5|Updated_Table 5: "Dynamic characteristics"_and_Table 6: "IGBT_
_switching characteristics (inductive load)"_. Updated_Figure 8:_
_"Collector current vs. switching frequency"._|
|04-Apr-2017|6|Modified title, features and applications on cover page
Modified_Table 2: "Absolute maximum ratings_",_Table 4: "Static_
_characteristics"_,_Table 6: "IGBT switching characteristics (inductive_
_load)"_and_Table 7: "Diode switching characteristics (inductive load)"_
Minor text changes.|
18/19
DocID027429 Rev 6
**STGB10M65DF2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
DocID027429 Rev 6
19/19
## Links
- [View this product on Novapart](https://novapart.co/products/STGB10M65DF2/igbt-20-a-155-v-115-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgb10m65df2/igbt-single-650v-20a-to-263-3/dp/2490227RL)
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