# Power MOSFET, N Channel, 600 V, 10 A, 0.68 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STFU10NK60Z/power-mosfet-n-channel-600-v-10-a-068-ohm-to-220fp
**SKU**: STFU10NK60Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4520
**Stock**: 500+
**Lead Time**: 113 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | SuperMESH |
| Qualification | - |
| Power Dissipation | 35W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.68ohm |
| Gate Source Threshold Voltage Max | 3.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3367043/)
## **STFU10NK60Z**
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH™ Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
## **Features**
|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**Ptot**|
|---|---|---|---|---|
|STFU10NK60Z|600 V|0.75 Ω|10 A|35 W|
- Extremely high dv/dt capability
- 100% avalanche tested
**==> picture [94 x 54] intentionally omitted <==**
**----- Start of picture text -----**
1 [2 3]
TO-220FP
ultra narrow leads
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- Gate charge minimized
- Zener-protected
## **Applications**
- Switching applications
**Figure 1: Internal schematic diagram**
## **Description**
This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by
STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STFU10NK60Z|10NK60Z|TO-220FP ultra narrow leads|Tube|
December 2016
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This is information on a product in full production.
_www.st.com_
|**Contents**
**STFU10NK60Z **|**Contents**
**STFU10NK60Z **|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1
TO-220FP ultra narrow leads package information ......................... 10|
|**5**|**Revision history ............................................................................ 12**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|600|V|
|VGS|Gate-source voltage|±30|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|10|A|
|ID_(1)_|Drain current (continuous) at TC= 100 °C|5.7|A|
|IDM_(2)_|Drain current (pulsed)|36|A|
|PTOT|Total dissipation at TC= 25 °C|35|W|
|ESD|Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)|4|kV|
|dv/dt_(3)_|Peak diode recoveryvoltage slope|4.5|V/ns|
|VISO|Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1s; TC= 25 °C)|2500|V|
|Tj|Operationjunction temperature range|-55 to 150|°C|
|Tstg|Storage temperature range|||
## **Notes:**
- (1)Limited by package
(2)Pulse width limited by safe operating area
(3)ISD < 10 A , di/dt < 200 A/μs , VDD = 80 % V(BR)DSS
## **Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|3.6|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient max|62.5|°C/W|
## **Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive
(pulse width limited byTJmax)|10|A|
|EAS|Single pulse avalanche energy
(startingTJ= 25 °C, ID= IAR, VDD= 50 V)|300|mJ|
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**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
**Table 5: On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 250 μA|600|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,
TC= 125 °C_(1)_|||50|µA|
|IGSS|Gate-bodyleakage current|VDS= 0 V, VGS= +20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source
on- resistance|VGS= 10 V, ID= 4.5 A||0.68|0.75|Ω|
## **Notes:**
(1)Defined by design, not subject to production test.
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0 V, VDS= 25 V,
f = 1 MHz|-|1370|-|pF|
|Coss|Output capacitance||-|156|-|pF|
|Crss|Reverse transfer capacitance||-|37|-|pF|
|Coss eq_(1)_|Equivalent output capacitance|VGS= 0 V, VDS= 0 to 480 V|-|93|-|pF|
|Qg|Totalgate charge|VDD= 480 V, ID= 8 A,
VGS= 10 V
(see_Figure 13: "Test circuit_
_for gate charge behavior"_)|-|48|-|nC|
|Qgs|Gate-source charge||-|8|-|nC|
|Qgd|Gate-drain charge||-|25|-|nC|
## **Notes:**
(1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 4 A,
RG= 4.7 Ω, VGS= 10 V
(see_Figure 12: "Test circuit_
_for resistive load switching_
_times"_and_Figure 17:_
_"Switching time waveform"_)|-|20|-|ns|
|tr|Rise time||-|20|-|ns|
|td(off)|Turn-off delaytime||-|55|-|ns|
|tf|Fall time||-|30|-|ns|
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**Electrical characteristics**
**Table 8: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD_(1)_|Source-drain current||-||10|V|
|ISDM_(2)_|Source-drain current
(pulsed)||-||36|A|
|VSD_(3)_|Forward on voltage|ISD= 10 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recoverytime|ISD= 8 A, di/dt = 100 A/µs,
VDD= 40 V , TJ= 150 °C
(see_Figure 14: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|570||ns|
|Qrr|Reverse recoverycharge||-|4.1||µC|
|IRRM|Reverse recovery current||-|15||A|
## **Notes:**
(1)Limited by package
- (2)Pulse width limited by safe operating area
(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
**Table 9: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown
voltage|IGS= ±1 mA, ID= 0 A|±30|-|-|V|
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
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## **Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area**
**Figure 3: Thermal impedance**
**==> picture [459 x 218] intentionally omitted <==**
**Figure 4: Output characteristics**
**Figure 5: Gate charge vs gate-source voltage**
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**Electrical characteristics**
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STFU10NK60Z
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**Figure 6: Capacitance variations**
**Figure 7: Static drain-source on-resistance**
**==> picture [461 x 211] intentionally omitted <==**
**Figure 8: Normalized gate threshold voltage vs Figure 9: Normalized on-resistance vs temperature temperature**
**==> picture [462 x 205] intentionally omitted <==**
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Electrical characteristics
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Figure 10: Source-drain diode forward Figure 11: Maximum avalanche energy
characteristics
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 375] intentionally omitted <==**
**----- Start of picture text -----**
Figure 12: Test circuit for resistive load Figure 13: Test circuit for gate charge
switching times behavior
Figure 14: Test circuit for inductive load Figure 15: Unclamped inductive load test
switching and diode recovery times circuit
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**==> picture [403 x 169] intentionally omitted <==**
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Figure 16: Unclamped inductive waveform Figure 17: Switching time waveform
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO-220FP ultra narrow leads package information**
**Figure 18: TO-220FP ultra narrow leads package outline**
**==> picture [406 x 480] intentionally omitted <==**
**----- Start of picture text -----**
8576148_1
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**Package information**
|**60Z **
**Package information**|**60Z **
**Package information**|**60Z **
**Package information**|**60Z **
**Package information**|
|---|---|---|---|
|**Table 10: TO-220FP ultra narrow leads mechanical data**||||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|B|2.50||2.70|
|D|2.50||2.75|
|E|0.45||0.60|
|F|0.65||0.75|
|F1|-||0.90|
|G|4.95||5.20|
|G1|2.40|2.54|2.70|
|H|10.00||10.40|
|L2|15.10||15.90|
|L3|28.50||30.50|
|L4|10.20||11.00|
|L5|2.50||3.10|
|L6|15.60||16.40|
|L7|9.00||9.30|
|L8|3.20||3.60|
|L9|-||1.30|
|Dia.|3.00||3.20|
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**Revision history**
## **5 Revision history**
**Table 11: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-Jan-2016|1|Initial release.|
|12-Sep-2016|2|Document status changed from preliminary to production data.
Minor text changes.|
|05-Dec-2016|3|Updated Features on cover page.
Updated_Table 2: "Absolute maximum ratings"_and added_Table 4:_
_"Avalanche characteristics"_.
Updated_Table 5: "On /off states"_,_Table 6: "Dynamic"_,_Table 8: "Source_
_drain diode"_and_Table 9: "Gate-source Zener diode"_.
Minor text changes|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2016 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STFU10NK60Z/power-mosfet-n-channel-600-v-10-a-068-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stfu10nk60z/mosfet-n-ch-600v-10a-150deg-c/dp/3367043)
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