# Power MOSFET, N Channel, 600 V, 13 A, 0.255 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STFH18N60M2/power-mosfet-n-channel-600-v-13-a-0255-ohm-to
**SKU**: STFH18N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7670
**Stock**: 100+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh, M2 |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.255ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2602655/)
**STFH18N60M2**
Datasheet
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package
**==> picture [128 x 128] intentionally omitted <==**
**----- Start of picture text -----**
TO-220 FP wide creepage
D(2)
G(1)
S(3) AM15572v1_no_tab
**----- End of picture text -----**
## **Features**
|**Features**||
|---|---|
|**Features**
**Order code**
**VDS @TJmax**
**RDS(on) max.**
STFH18N60M2
650 V
0.280 Ω
•
Extremely low gate charge
~~a~~|**ID**
13 A|
|•
Excellent output capacitance (COSS) profile||
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
## **Applications**
- Switching applications
- LCC converters
- Resonant converters
## **Description**
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
## **Product status link** ~~ea~~
**Product status link** STFH18N60M2
## **Product summary** ~~Sea~~
|**Product summary**
~~Sea~~|**Product summary**
~~Sea~~|
|---|---|
|**Order code**|STFH18N60M2|
|**Marking**|18N60M2|
|**Package**|TO-220FP wide
creepage|
|**Packing**|Tube|
**DS11693** - **Rev 3** - **June 2019** For further information contact your local STMicroelectronics sales office.
www.st.com
**STFH18N60M2 Electrical ratings**
## **1**
## **Electrical ratings**
## **Table 1. Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID (1)|Drain current (continuous) at TC= 25 °C|13|A|
||Drain current (continuous) at TC= 100 °C|8|A|
|IDM(2)|Drain current (pulsed)|52|A|
|PTOT|Total power dissipation at TC= 25 °C|25|W|
|dv/dt(3)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50|V/ns|
|VISO|Insulation withstand voltage (RMS) from all three leads to external heat
sink (t = 1 s; TC= 25 °C)|2.5|kV|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||
_1. Limited by maximum junction temperature._
_2. Pulse width limited by safe operating area._
_3. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V_
_4. VDS ≤ 480 V_
## **Table 2. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient|62.5|°C/W|
## **Table 3. Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (pulse width limited by
Tjmax)|3|A|
|EAS|Single pulse avalanche energy (starting Tj=25 °C, ID= IAR, VDD=50 V)|135|mJ|
**DS11693** - **Rev 3**
**page 2/12**
**STFH18N60M2 Electrical characteristics**
**2 Electrical characteristics**
(TC = 25 °C unless otherwise specified).
**Table 4. On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0 V|600|||V|
|IDSS|Zero gate voltage
drain current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,
TC= 125 °C(1)|||100|µA|
|IGSS|Gate-body leakage
current|VDS= 0 V, VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 6.5 A||0.255|0.280|Ω|
_1. Defined by design, not subject to production test._
**Table 5. Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|791|-|pF|
|Coss|Output capacitance||-|40|-|pF|
|Crss|Reverse transfer capacitance||-|1.3|-|pF|
|Coss eq. (1)|Equivalent output capacitance|VDS= 0 to 480 V, VGS= 0 V|-|164.5|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|5.6|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 13 A,
VGS= 0 to 10 V (see
Figure 14. Test circuit for gate
charge behavior)|-|21.5|-|nC|
|Qgs|Gate-source charge||-|3.2|-|nC|
|Qgd|Gate-drain charge||-|11.3|-|nC|
_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._
**Table 6. Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 6.5 A,
RG= 4.7 Ω, VGS= 10 V
(seeFigure 13. Test circuit for
resistive load switching times
andFigure 18. Switching time
waveform)|-|12|-|ns|
|tr|Rise time||-|9|-|ns|
|td(off)|Turn-off delay time||-|47|-|ns|
|tf|Fall time||-|10.6|-|ns|
**DS11693** - **Rev 3**
**page 3/12**
**STFH18N60M2 Electrical characteristics**
## **Table 7. Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||13|A|
|ISDM (1)|Source-drain current (pulsed)||-||52|A|
|VSD (2)|Forward on voltage|ISD= 13 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs
VDD= 60 V (see
Figure 15. Test circuit for
inductive load switching and
diode recovery times)|-|305||ns|
|Qrr|Reverse recovery charge||-|3.3||µC|
|IRRM|Reverse recovery current||-|22||A|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C
(seeFigure 15. Test circuit for
inductive load switching and
diode recovery times)|-|417||ns|
|Qrr|Reverse recovery charge||-|4.6||µC|
|IRRM|Reverse recovery current||-|22||A|
_1. Pulse width limited by safe operating area._
_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._
**DS11693** - **Rev 3**
**page 4/12**
**STFH18N60M2 Electrical characteristics (curves)**
## **2.1 Electrical characteristics (curves)**
**Figure 1. Safe operating area**
**==> picture [206 x 168] intentionally omitted <==**
**----- Start of picture text -----**
ID AM15834v1
(A )
10
10µs
1 100µs
1ms
Tj=150°C 10ms
0.1 Tc=25°C
Single
pulse
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**Figure 3. Output characteristics**
**==> picture [189 x 167] intentionally omitted <==**
**----- Start of picture text -----**
AM15837v1
ID
(A) VGS=7, 8, 9, 10V
30
25
6V
20
15
10
5V
5
4V
0
0 5 10 15 20 VDS(V)
**----- End of picture text -----**
**Figure 5. Gate charge vs gate-source voltage**
**==> picture [197 x 168] intentionally omitted <==**
**----- Start of picture text -----**
VGS AM15839v1 VDS
(V)
VDD=480V (V)
12 VDSVDS ID=13A 500
10
400
8
300
6
200
4
100
2
0 0
0 5 10 15 20 25 Qg(nC)
**----- End of picture text -----**
**Figure 2. Thermal impedance**
**==> picture [183 x 166] intentionally omitted <==**
**----- Start of picture text -----**
K GC20940
10 [-1]
10 [-2]
10 [-3]
10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] t p (s)
**----- End of picture text -----**
**Figure 4. Transfer characteristics**
**==> picture [196 x 167] intentionally omitted <==**
**----- Start of picture text -----**
AM15838v1
ID(A)
VDS=18V
30
25
20
15
10
5
0
0 2 4 6 8 10 VGS(V)
**----- End of picture text -----**
**Figure 6. Static drain-source on-resistance**
**==> picture [203 x 168] intentionally omitted <==**
**----- Start of picture text -----**
AM15840v1
RDS(on)
(Ω)
VGS=10V
0.270
0.265
0.260
0.255
0.250
0.245
0 2 4 6 8 10 12 ID(A)
**----- End of picture text -----**
**DS11693** - **Rev 3**
**page 5/12**
**STFH18N60M2 Electrical characteristics (curves)**
**Figure 7. Capacitance variations**
**==> picture [198 x 167] intentionally omitted <==**
**----- Start of picture text -----**
C AM15841v1
(pF)
1000
Ciss
100
Coss
10
Crss
1
0.1 1 10 100 VDS(V)
**----- End of picture text -----**
**Figure 8. Normalized gate threshold voltage vs. temperature**
**==> picture [199 x 166] intentionally omitted <==**
**----- Start of picture text -----**
V GS(th) GIPG070815BQ6KLVTH
(norm.)
I D = 250 µA
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j (°C)
**----- End of picture text -----**
**==> picture [513 x 194] intentionally omitted <==**
**----- Start of picture text -----**
Figure 9. Normalized on-resistance vs temperature Figure 10. Source-drain diode forward characteristics
RDS(on) GIPG070815BQ6KLRON VSD(V) AM15842v1
(norm.)
VGS = 10 V 1.4
2.4
1.2
2.0 TJ=-50°C
1.0
1.6
0.8
1.2
0.6 TJ=150°C TJ=25°C
0.8 0.4
0.4 0.2
0.0 0.0
-75 -25 25 75 125 Tj (°C) 0 2 4 6 8 10 12 ISD(A)
**----- End of picture text -----**
**Figure 11. Normalized V(BR)DSS vs temperature**
**==> picture [204 x 166] intentionally omitted <==**
**----- Start of picture text -----**
V (BR)DSS GIPG070815BQ6KLBDV
(norm.)
I D = 1 mA
1.12
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T j (°C)
**----- End of picture text -----**
**Figure 12. Output capacitance stored energy**
**==> picture [208 x 168] intentionally omitted <==**
**----- Start of picture text -----**
AM15843v1
Eoss(µJ)
6
5
4
3
2
1
0
0 100 200 300 400 500 600 VDS(V)
**----- End of picture text -----**
**DS11693** - **Rev 3**
**page 6/12**
**STFH18N60M2 Test circuits**
**3 Test circuits**
**==> picture [513 x 173] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior
VDD
12 V 47 kΩ
1 kΩ
100 nF
RL 2200 3.3
+ μF μF VDD
VD VGS IG= CONST 100 Ω D.U.T.
VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG
pulse width μF
47 kΩ
1 kΩ
AM01468v1 AM01469v1
**----- End of picture text -----**
**==> picture [513 x 183] intentionally omitted <==**
**----- Start of picture text -----**
Figure 15. Test circuit for inductive load switching and
Figure 16. Unclamped inductive load test circuit
diode recovery times
A A A L
G D D.U.T. fastdiode 100 µH VD 2200 3.3
25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD
G D.U.T.
+ RG S Vi D.U.T.
_ pulse width
AM01471v1
AM01470v1
**----- End of picture text -----**
**==> picture [513 x 173] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD
90% 90%
IDM
ID 0 10% VDS 10%
VDD VDD VGS 90%
AM01472v1 0 10%
AM01473v1
**----- End of picture text -----**
**DS11693** - **Rev 3**
**page 7/12**
**STFH18N60M2 Package information**
**4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
## **4.1 TO-220FP wide creepage package information**
**Figure 19. TO-220FP wide creepage package outline**
**==> picture [127 x 186] intentionally omitted <==**
**==> picture [43 x 7] intentionally omitted <==**
**----- Start of picture text -----**
DM00260252_1
**----- End of picture text -----**
**DS11693** - **Rev 3**
**page 8/12**
**STFH18N60M2 TO-220FP wide creepage package information**
**Table 8. TO-220FP wide creepage package mechanical data**
|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.60|4.70|4.80|
|B|2.50|2.60|2.70|
|D|2.49|2.59|2.69|
|E|0.46||0.59|
|F|0.76||0.89|
|F1|0.96||1.25|
|F2|1.11||1.40|
|G|8.40|8.50|8.60|
|G1|4.15|4.25|4.35|
|H|10.90|11.00|11.10|
|L2|15.25|15.40|15.55|
|L3|28.70|29.00|29.30|
|L4|10.00|10.20|10.40|
|L5|2.55|2.70|2.85|
|L6|16.00|16.10|16.20|
|L7|9.05|9.15|9.25|
|Dia|3.00|3.10|3.20|
**DS11693** - **Rev 3**
**page 9/12**
**STFH18N60M2**
## **Revision history**
**Table 9. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Jun-2016|1|First release.|
|16-Jun-2016|2|Document status promoted from preliminary data to production data.
Minor text changes.|
|06-Jun-2019|3|ModifiedFigure 8. Normalized gate threshold voltage vs. temperature,
Figure 9. Normalized on-resistance vs temperatureandFigure 11. Normalized
V(BR)DSSvs temperature.
Minor text changes.|
**DS11693** - **Rev 3**
**page 10/12**
**STFH18N60M2 Contents**
## **Contents**
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**
TO-220FP wide creepage package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**||
**DS11693** - **Rev 3**
**page 11/12**
**STFH18N60M2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
**DS11693** - **Rev 3**
**page 12/12**
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stfh18n60m2/mosfet-n-ch-600v-13a-to-220fp/dp/2602655)
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