# Power MOSFET, N Channel, 900 V, 3.6 A, 1.1 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STF9NK90Z/power-mosfet-n-channel-900-v-36-a-11-ohm-to-220fp
**SKU**: STF9NK90Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0200
**Stock**: 500+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; P
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 900V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.6A |
| Drain Source On State Resistance | 1.1ohm |
| Gate Source Threshold Voltage Max | 3.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1752097/)
## **STB9NK90Z, STF9NK90Z STP9NK90Z, STW9NK90Z** N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D[2] PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET
## **Features**
|**Type**|**VDSS**|**RDS(on)**
**max.**|**ID**|**Pw**|
|---|---|---|---|---|
|STB9NK90Z|900V|<1.3Ω|8A|160 W|
|STW9NK90Z||||160 W|
|STP9NK90Z||||160 W|
|STF9NK90Z||||40 W|
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
**==> picture [172 x 146] intentionally omitted <==**
**----- Start of picture text -----**
3
2 3 1
1
TO-220 D²PAK
3 3
2 2
1 1
TO-247 TO-220FP
**----- End of picture text -----**
## **Application**
- Switching applications
## **Description**
The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ wellestablished strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage power MOSFETs.
## **Figure 1. Internal schematic diagram**
**==> picture [220 x 171] intentionally omitted <==**
**----- Start of picture text -----**
D(2)
G(1)
S(3)
AM01476v1
**----- End of picture text -----**
**Table 1. Device summary**
|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB9NK90Z|B9NK90|D²PAK|Tape and reel|
|STF9NK90Z|F9NK90Z|TO-220FP|Tube|
|STP9NK90Z|P9NK90Z|TO-220||
|STW9NK90Z|W9NK90Z|TO-247||
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_www.st.com_
|**Contents**|**STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
|**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|
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**Electrical ratings**
## **1 Electrical ratings**
## **Table 2. Absolute maximum ratings**
|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220, D²PAK**
**TO-247**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|900||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25 °C|8|8(1)|A|
|ID|Drain current (continuous) at TC=100 °C|5|5(1)|A|
|IDM
(2)|Drain current (pulsed)|32|32(1)|A|
|PTOT|Total dissipation at TC= 25 °C|160|40|W|
||Derating Factor|1.28|0.32|W/°C|
|Vesd(G-S)|G-S ESD (HBM C=100 pF, R=1.5 kΩ)|4||KV|
|dv/dt(3)|Peak diode recovery voltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)|--|2500|V|
|TJ
Tstg|Operating junction temperature
Storage temperature|-55 to 150||°C|
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 10 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJmax.
## **Table 3. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Value**||**Unit**|
|---|---|---|---|---|---|
|||**TO-220**
**D²PAK**|**TO-220FP**|**TO-247**||
|Rthj-case|Thermal resistance junction-case max|0.78|3.1|0.78|°C/W|
|Rthj-a|Thermal resistance junction-ambient max|62.5||50|°C/W|
|Tl|Maximum lead temperature for soldering
purpose|300|||°C|
## **Table 4. Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)|8|A|
|EAS|Single pulse avalanche energy (starting Tj=25 °C,
ID= IAR, VDD= 50 V)_(see Figure 22)(see Figure 23)_|300|mJ|
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**Electrical characteristics**
## **2 Electrical characteristics**
(TCASE = 25 °C unless otherwise specified)
## **Table 5. On/off states**
|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0|900|||V|
|IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= max rating,
VDS= max rating @125 °C|||1
50|µA
µA|
|IGSS|Gate body leakage current
(VDS= 0)|VGS= ± 20 V, VDS= 0|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 3.6 A||1.1|1.3|Ω|
## **Table 6. Dynamic**
|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS= 25 V, f = 1 MHz,
VGS= 0|-|2115
190
40|-|pF
pF
pF|
|Coss eq
(1)|Equivalent output
capacitance|VGS= 0, VDS= 0 to 720 V|-|115|-|pF|
|Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 720 V, ID= 8 A
VGS=10 V
_Figure 20_|-|72
14
38|-|nC
nC
nC|
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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**Electrical characteristics**
## **Table 7. Switching times**
|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)
tr|Turn-on delay time
Rise Time|VDD= 450 V, ID= 4 A,
RG= 4.7Ω,VGS= 10 V
_Figure 19_
_Figure 24_|-|22
13|-|ns
ns|
|td(off)
tf|Turn-off delay time
Fall time||-|55
28|-|ns
ns|
## **Table 8. Source drain diode**
|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD|Source-drain current||-||8|A|
|ISDM
(1)|Source-drain current (pulsed)||||32|A|
|VSD
(2)|Forward on voltage|ISD= 8 A, VGS=0|-||1.6|V|
|trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 8 A,
di/dt = 100 A/µs,
VDD= 50 V, Tj = 150 °C
_Figure 21_|-|950
10
21||ns
µC
A|
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
## **Table 9. Gate-source Zener diode**
|**Table 9.**|**Gate-source Zener diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-source breakdown voltage|IGS= ±1 mA(open drain)|30|-||V|
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2. Safe operating area for TO-220, D²PAK**
**Figure 3. Thermal impedance for TO-220, D²PAK**
**==> picture [157 x 151] intentionally omitted <==**
## **Figure 4. Safe operating area for TO-220FP**
## **Figure 5. Thermal impedance for TO-220FP**
**==> picture [158 x 153] intentionally omitted <==**
**Figure 6. Safe operating area for TO-247**
**==> picture [155 x 156] intentionally omitted <==**
**Figure 7. Thermal impedance for TO-247**
**==> picture [157 x 151] intentionally omitted <==**
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**Electrical characteristics**
## **Figure 8. Output characteristics**
**==> picture [155 x 147] intentionally omitted <==**
## **Figure 9. Transfer characteristics**
**==> picture [155 x 148] intentionally omitted <==**
## **Figure 10. Transconductance**
**==> picture [147 x 149] intentionally omitted <==**
## **Figure 11. Static drain-source on resistance**
**==> picture [155 x 150] intentionally omitted <==**
## **Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations**
**==> picture [155 x 152] intentionally omitted <==**
**==> picture [155 x 148] intentionally omitted <==**
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**Electrical characteristics**
**Figure 14. Normalized gate threshold voltage vs temperature**
**==> picture [155 x 141] intentionally omitted <==**
**Figure 16. Source-drain diode forward characteristics**
**==> picture [155 x 144] intentionally omitted <==**
**Figure 15. Normalized on resistance vs temperature**
**==> picture [155 x 141] intentionally omitted <==**
**Figure 17. Normalized BVDSS vs temperature**
**==> picture [164 x 146] intentionally omitted <==**
**Figure 18. Maximum avalanche energy vs temperature**
**==> picture [155 x 149] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load**
**==> picture [463 x 169] intentionally omitted <==**
**----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. µF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit**
**==> picture [463 x 169] intentionally omitted <==**
**----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100µH VD 2200 3.3
S B 3.3 1000 µF µF VDD
25 Ω B B D µF µF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
**----- End of picture text -----**
**Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform**
**==> picture [463 x 169] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
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**Package mechanical data**
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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**Package mechanical data**
## **Table 10. TO-220FP mechanical data**
|**Dim.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
## **Figure 25. TO-220FP drawing**
**==> picture [405 x 265] intentionally omitted <==**
**----- Start of picture text -----**
L7
E
A
B
D
Dia
L5
L6
F1 F2
F
H G
G1
L2 L4
L3
7012510_Rev_K
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**==> picture [77 x 7] intentionally omitted <==**
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**Package mechanical data**
## **TO-220 type A mechanical data**
||||**mm**|||
|---|---|---|---|---|---|
||**Dim**|||||
|||**Min**|**Typ**|**Max**||
||A|4.40||4.60||
||b|0.61||0.88||
||b1|1.14||1.70||
||c|0.48||0.70||
||D|15.25||15.75||
||D1||1.27|||
||E|10||10.40||
||e|2.40||2.70||
||e1|4.95||5.15||
||F|1.23||1.32||
||H1|6.20||6.60||
||J1|2.40||2.72||
||L|13||14||
||L1|3.50||3.93||
||L20||16.40|||
||L30||28.90|||
||∅P|3.75||3.85||
||Q|2.65||2.95||
**==> picture [300 x 304] intentionally omitted <==**
**----- Start of picture text -----**
0015988_Rev_S
**----- End of picture text -----**
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**Package mechanical data**
## **TO-247 mechanical data**
|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|
|---|---|---|---|
|||||
|||||
|**Dim.**|**mm.**
**Min.**
**Typ.**
**Max.**|||
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|øP|3.55||3.65|
|øR|4.50||5.50|
|S||5.50||
**==> picture [400 x 263] intentionally omitted <==**
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**Package mechanical data**
## **D2PAK (TO-263) mechanical data**
**==> picture [399 x 569] intentionally omitted <==**
**----- Start of picture text -----**
mm inc h
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 0.03 0.23 0.001 0.009
b 0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 7.50 0.295
E 10 10.40 0.394 0.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.28 0.192 0.208
H 15 15.85 0.590 0.624
J1 2.49 2.69 0.099 0.106
L 2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8° 0° 8°
0079457_M
**----- End of picture text -----**
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**Packaging mechanical data**
## **5 Packaging mechanical data**
## **D[2] PAK FOOTPRINT**
## **TAPE AND REEL SHIPMENT**
**==> picture [383 x 360] intentionally omitted <==**
**----- Start of picture text -----**
REEL MECHANICAL DATA
40 mm min.
; Accessat slot locationhole ; . . T DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
- 8 B 1.5 0.059
ire c C 12.8 13.2 0.504 0.520
rf of Zs aon D 20.2 0795
G 24.4 26.4 0.960 1.039
ro rT] |
Full radius / Tape slot - G measured N 100 3.937
tape start at hub T 30.4 1.197
25mm min.
—_—— width
BASE QTY BULK QTY
TAPE MECHANICAL DATA
1000 1000
mm inch
DIM. — -——_}
a MIN. MAX. a MIN. ee MAX. .
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063 TAPE oO: 0-0 0-00-0800: 0
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073 o PETA
ee F 11.4 11.6 ee 0.449 0.456 SAREE8)LJ - id - }| -O-| |©
K0 4.8 5.0 0.189 0.197
r P0 | 3.9 | 4.1 fof] 0.153 0.161 sr User Directionof Feed
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
ee T ee 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
rf tf ofee FEED DIRECTION Bending radius
* on sales type
**----- End of picture text -----**
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**Revision history**
## **6 Revision history**
**Table 11. Revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Sep-2005|2|Complete version|
|27-Oct-2005|3|Inserted ecopack indication|
|20-Jul-2006|4|New template, no content change|
|20-Mar-2007|5|Typo mistake on cover page|
|13-Jul-2007|6|Corrected unit on_Table 5.: On/off states_|
|19-May-2010|7|Corrected_Figure 18: Maximum avalanche energy vs_
_temperature_|
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Doc ID 9479 Rev 7
## Links
- [View this product on Novapart](https://novapart.co/products/STF9NK90Z/power-mosfet-n-channel-900-v-36-a-11-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf9nk90z/mosfet-n-ch-900v-8a-to-220fp/dp/1752097)
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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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