# Power MOSFET, N Channel, 650 V, 5 A, 0.79 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2460395/)

**URL**: https://novapart.co/products/STF9N65M2/power-mosfet-n-channel-650-v-5-a-079-ohm-to-220fp
**SKU**: STF9N65M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 20W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 20W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.79ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.79ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2460395/)

## **STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages 

**Datasheet** - **production data** 

**==> picture [179 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK<br>3<br>- e&<br>1 [2]<br>TO-220FP<br>TAB<br>TAB<br>3<br>2<br>3 1<br>2<br>1<br>IPAK<br>TO-220<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**|**VDS**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STD9N65M2|650 V|0.9Ω|5 A|
|STF9N65M2||||
|STP9N65M2||||
|STU9N65M2||||



- Extremely low gate charge 

- Excellent output capacitance (Coss) profile 

- 100% avalanche tested 

- Zener-protected 

## **Figure 1. Internal schematic diagram** 

**==> picture [17 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
, TAB<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high efficiency converters. 

**==> picture [33 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD9N65M2|9N65M2|DPAK|Tape and reel|
|STF9N65M2||TO-220FP|Tube|
|STP9N65M2||TO-220||
|STU9N65M2||IPAK||



July 2014 

DocID025975 Rev 2 

1/23 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>DPAK, STD9N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>TO-220FP, STF9N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3<br>TO-220, STP9N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
||4.4<br>IPAK, STU9N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|



2/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**DPAK, TO-220,**<br>**IPAK**|**TO-220FP**||
|VGS|Gate-source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|5|5(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|3.2|3.2(1)|A|
|IDM<br>(2)|Drain current (pulsed)|20||A|
|PTOT|Total dissipation at TC= 25 °C|60|20|W|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t=1 s; TC=25 °C)||2500|V|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50|||
|Tstg|Storage temperature|- 55 to 150||°C|
|Tj|Max. operating junction temperature|150|||



1. Current limited by package. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 

4. VDS ≤ 520 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**DPAK**|**TO-220FP**|**TO-220**|**IPAK**||
|Rthj-case|Thermal resistance junction-case max|2.08|6.25|2.08||°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|50||||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max||62.5||100|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not<br>repetitive (pulse width limited by Tjmax)|1|A|
|EAS|Single pulse avalanche energy (starting<br>Tj=25°C, ID= IAR; VDD=50)|105|mJ|



DocID025975 Rev 2 

3/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 650 V|||1|µA|
|||VGS= 0, VDS= 650 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 2.5 A||0.79|0.9|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|315|-|pF|
|Coss|Output capacitance||-|18|-|pF|
|Crss|Reverse transfer<br>capacitance||-|1|-|pF|
|Coss eq<br>(1)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 520 V|-|109|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|6.6|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 5 A,<br>VGS= 10 V<br>(see_Figure 19_)|-|10|-|nC|
|Qgs|Gate-source charge||-|2.5|-|nC|
|Qgd|Gate-drain charge||-|5|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 325 V, ID= 2.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 18_and_Figure 23_)|-|7.5|-|ns|
|tr|Rise time||-|6.6|-|ns|
|td(off)|Turn-off delay time||-|22.5|-|ns|
|tf|Fall time||-|18|-|ns|



4/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||5|A|
|ISDM (1)|Source-drain current (pulsed)||-||20|A|
|VSD (2)|Forward on voltage|VGS= 0, ISD= 5 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 20_)|-|276||ns|
|Qrr|Reverse recovery charge||-|1.7||µC|
|IRRM|Reverse recovery current||-|12.5||A|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 20_)|-|312||ns|
|Qrr|Reverse recovery charge||-|1.9||µC|
|IRRM|Reverse recovery current||-|12.4||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID025975 Rev 2 

5/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and IPAK IPAK** 

**==> picture [462 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18058v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP<br>ID AM18056v1<br>(A)<br>10<br>10µs<br>1 100µs<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Safe operating area for TO-220** 

## **Figure 7. Thermal impedance for TO-220** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18057v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


DocID025975 Rev 2 

6/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical characteristics** 

**Figure 8. Output characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18059v1<br>ID(A)<br>VGS=8, 9, 10V<br>12<br>7V<br>10<br>6V<br>8<br>6<br>4<br>5V<br>2<br>4V<br>0<br>0 5 10 15 20 25 30 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Transfer characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18060v1<br>ID<br>(A)<br>VDS=20V<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Gate charge vs gate-source voltage** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM18061v1VDS<br>(V) (V)<br>VDS VDD=520V<br>10 ID=5A 500<br>8 400<br>6 300<br>4 200<br>2 100<br>0 0<br>0 2 4 6 8 10 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 11. Static drain-source on-resistance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18062v1<br>RDS(on)<br>(Ω)<br>VGS=10V<br>0.830<br>0.820<br>0.810<br>0.800<br>0.790<br>0.780<br>0.770<br>0.760<br>0 1 2 3 4 5 ID(A)<br>**----- End of picture text -----**<br>


**Figure 12. Capacitance variations** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM18063v1<br>(pF)<br>1000<br>Ciss<br>100<br>10 Coss<br>1 Crss<br>0.1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 13. Output capacitance stored energy** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM18064v1<br>(µJ)<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


DocID025975 Rev 2 

7/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

**Figure 15. Normalized on-resistance vs temperature** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM18065v1 RDS(on) AM18066v1<br>(norm) (norm)<br>ID=2.5A<br>ID=250µA VGS=10V<br>1.1 2.3<br>2.1<br>1.9<br>1.0<br>1.7<br>1.5<br>0.9<br>1.3<br>1.1<br>0.8 0.9<br>0.7<br>0.7 0.5<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Source-drain diode forward characteristics** 

**Figure 17. Normalized V(BR)DSS vs temperature** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD (V) AM18068v1 V(BR)DSS(norm) AM18067v1<br>1.11<br>TJ=-50°C ID=1mA<br>1 1.09<br>1.07<br>0.9<br>TJ=25°C 1.05<br>1.03<br>0.8<br>1.01<br>0.99<br>0.7<br>0.97<br>TJ=150°C<br>0.6 0.95<br>0.93<br>0.5 0.91<br>1 2 3 4 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


8/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 18. Switching times test circuit for resistive load** 

**Figure 19. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 22. Unclamped inductive waveform** 

## **Figure 23. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID025975 Rev 2 

9/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

## **4.1 DPAK, STD9N65M2** 

**==> picture [196 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. DPAK (TO-252) type A drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 558] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


DocID025975 Rev 2 

11/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

**Table 9. DPAK (TO-252) type A mechanical data** 

||**Table 9. DPAK(TO-252) type A mechanical data**|**Table 9. DPAK(TO-252) type A mechanical data**|**Table 9. DPAK(TO-252) type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1||2.80||
|L2||0.80||
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



12/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

**==> picture [212 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. DPAK (TO-252) type A footprint  [(a)]<br>**----- End of picture text -----**<br>


**==> picture [405 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
�����������<br>**----- End of picture text -----**<br>


- a. All dimensions are in millimeters 

DocID025975 Rev 2 

13/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

## **4.2 TO-220FP, STF9N65M2** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


14/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Ø|3||3.2|



DocID025975 Rev 2 

15/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

## **4.3 TO-220, STP9N65M2** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. TO-220 type A drawing<br>**----- End of picture text -----**<br>


16/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

||**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



DocID025975 Rev 2 

17/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

## **4.4 IPAK, STU9N65M2** 

## **Figure 28. IPAK (TO-251) drawing** 

**==> picture [405 x 456] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_L<br>**----- End of picture text -----**<br>


18/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Package mechanical data** 

**Table 12. IPAK (TO-251) mechanical data** 

||**Table 12. IPAK(TO-251) mechanical data**|**Table 12. IPAK(TO-251) mechanical data**|**Table 12. IPAK(TO-251) mechanical data**|
|---|---|---|---|
|**DIM**|**mm.**|||
||**min.**|**typ.**|**max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



DocID025975 Rev 2 

19/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 29. Tape for DPAK (TO-252)** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B1 B0<br>A) | Tl IRIE Co<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 SS»<br>User direction of feed<br>R<br>ol eh tel al fa l ta a<br>|» Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


20/23 DocID025975 Rev 2 ~~©~~ 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Packaging mechanical data** 

## **Figure 30. Reel for DPAK (TO-252)** 

**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 13. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1<br>0.35<br>16.3||||
|R|40|||||
|T|0.25|||||
|W|15.7|||||



DocID025975 Rev 2 

21/23 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Feb-2014|1|First release.|
|15-Jul-2014|2|– Modified: title,_Features_and_Description_<br>– Modified:_Figure 5_and_15_<br>– Updated:_Figure 28_and_Table 12_<br>– Minor text changes|



22/23 

DocID025975 Rev 2 

**STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID025975 Rev 2 

23/23 



## Links

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---

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