# Power MOSFET, N Channel, 1 kV, 6.5 A, 1.6 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2098241/)

**URL**: https://novapart.co/products/STF8NK100Z/power-mosfet-n-channel-1-kv-65-a-16-ohm-to-220fp
**SKU**: STF8NK100Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8000
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.5A |
| Drain Source On State Resistance | 1.6ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098241/)

**==> picture [63 x 39] intentionally omitted <==**

## **STF8NK100Z STP8NK100Z** N-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH™ MOSFET 

## **General features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STF8NK100Z<br>STP8NK100Z|1000 V<br>1000 V|<1.85Ω<br><1.85Ω|6.5 A_Note_1<br>6.5 A|40 W<br>160 W|



- EXTREMELY HIGH dv/dt CAPABILITY 

- 100% AVALANCHE RATED 

- IMPROVED ESD CAPABILITY 

**==> picture [136 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3 1 2 3<br>TO-220 TO-220FP<br>**----- End of picture text -----**<br>


- VERY LOW INTRINSIC CAPACITANCE 

## **Description** 

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 

## **Applications** 

## **Internal schematic diagram** 

**==> picture [104 x 119] intentionally omitted <==**

- HIGH CURRENT,SWITCHING APPLICATION 

- IDEAL FOR OFF-LINE POWER SUPPLIES 

## **Order codes** 

|**Order codes**||||
|---|---|---|---|
|**Sales Type**|**Marking**|**Package**|**Packaging**|
|STF8NK100Z|F8NK100Z|TO-220FP|TUBE|
|STP8NK100Z|P8NK100Z|TO-220|TUBE|



Rev 1 1/13 

November 2005 

_www.st.com_ 

**STF8NK100Z - STP8NK100Z** 

1 Electrical ratings 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**TO-220**|**TO-220FP**|||
|VDS|Drain-source Voltage (VGS=0)|1000|||V|
|VDGR|Drain-gate Voltage|1000|||V|
|VGS|Gate-Source Voltage|± 30|||V|
|ID_Note_1|Drain Current (continuous) at TC= 25°C|6.5|6.5||A|
|ID|Drain Current (continuous) at TC= 100°C|4.3|4.3||A|
|IDM_Note_ 2|Drain Current (pulsed)|16|16||A|
|PTOT|Total Dissipation at TC= 25°C|160|40||W|
||Derating Factor|1.28|0.32||W/°C|
|VESD(G-S)|Gate source ESD  (HBM-C=100pF, R=1.5KΩ)|4000|||V|
|dv/dt_Note_ 3|Peak Diode Recovery voltage slope|4.5|||V/ns|
|VISO|Insulation Withstand Voltage (DC)|--|2500||V|
|Tj<br>Tstg|Operating Junction Temperature<br>Storage Temperature|-55 to 150|||°C|
|**Table 2.**<br>**Thermal data**||||||
|||**TO-220**||**TO-220FP**||
|Rthj-case|Thermal Resistance Junction-case Max|0.78||3.1|°C/W|
|Rthj-a|Thermal Resistance Junction-ambient Max|62.5|||°C/W|
|Tl|Maximum Lead Temperature For Soldering<br>Purpose|300|||°C|
|**Table 3.**<br>**Avalanche Characteristics**||||||
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|IAR|Avalanche Current, Repetitive or<br>Not-Repetitive (pulse width limited by Tj max)|6.5|||A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25°C, ID=IAR, VDD=50V)|320|||mJ|



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**STF8NK100Z - STP8NK100Z** 

2 Electrical characteristics 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-Source Breakdown<br>Voltage|ID= 1mA, VGS= 0|1000|||V|
|IDSS|Zero Gate Voltage Drain<br>Current (VGS= 0)|VDS= Max Rating,<br>VDS= Max Rating,Tc = 125°C|||1<br>50|µA<br>µA|
|IGSS|Gate Body Leakage Current<br>(VDS= 0)|VGS= ±20V|||±10|µA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static Drain-Source On<br>Resistance|VGS= 10 V, ID= 3.15 A||1.60|1.85|Ω|



## **Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs_Note_6|Forward Transconductance|VDS=15V,   ID=3.15 A||7||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer Capacitance|VDS=25V, f=1 MHz, VGS=0||2180<br>174<br>36||pF<br>pF<br>pF|
|Coss eq.<br>_Note_5|Equivalent Output<br>Capacitance|VGS=0V, VDS=0 to 800V||83||pF|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD=800V, ID= 6.3A<br>VGS=10V<br>(see Figure 17)||73<br>12<br>40|102|nC<br>nC<br>nC|



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**STF8NK100Z - STP8NK100Z** 

2 Electrical characteristics 

## **Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VDD=500 V, ID= 3.15 A,<br>RG=4.7Ω,VGS=10V<br>(see Figure 18)||28<br>19||ns<br>ns|
|td(off)<br>tf|Turn-off Delay Time<br>FallTime|VDD=500 V, ID=3.15 A,<br>RG=4.7Ω,VGS=10V<br>(see Figure 18)||59<br>30||ns<br>ns|



## **Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM_Note_ 3|Source-drain Current<br>Source-drain Current (pulsed)||||6.5<br>26|A<br>A|
|VSD_Note_2|Forward on Voltage|ISD=6.3A, VGS=0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD=6.3A, di/dt = 100A/µs,<br>VDD=50 V, Tj=25°C||620<br>5.3<br>17||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD=6.3A, di/dt = 100A/µs,<br>VDD=50 V, Tj=150°C||840<br>7.5<br>18||ns<br>µC<br>A|
|**Table 8.**<br>**Gate-source zener diode**|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO<br>_Note_ 4|Gate-Source Breakdown<br>Voltage|Igs = ± 1mA (Open Drain)|30|||V|



(1) Limited only by maximum temperature allowed 

(2)ISD ≤ 6.5 A, di/dt ≤ 200A/µs, VDS ≤ V(BR)DSS, Tj≤ Tjmax 

(3)  Pulse width limited by safe operating area 

(4) The built-in-back-to-back Zener diodes have specifically been designed to enanche not only the device’s ESD capability, but also to make them safely absorb possible voltage is appropriate to archieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

(6) Pulsed: pulse duartion = 300µs, duty cycle 1.5% 

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**STF8NK100Z - STP8NK100Z** 

2 Electrical characteristics 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Safe Operating Area for TO-220** 

## **Figure 2. Thermal Impedance for TO-220** 

**==> picture [164 x 161] intentionally omitted <==**

**Figure 3. Safe Operating Area for TO-220FP** 

**==> picture [163 x 157] intentionally omitted <==**

**Figure 4. Thermal Impedance for TO-220FP** 

**==> picture [164 x 161] intentionally omitted <==**

**Figure 5. Output Characteristics** 

**==> picture [163 x 157] intentionally omitted <==**

**Figure 6. Transfer Characteristics** 

**==> picture [164 x 155] intentionally omitted <==**

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2 Electrical characteristics 

## **Figure 7. Transconductance** 

## **Figure 8. Static Drain-source on Resistance** 

**==> picture [164 x 167] intentionally omitted <==**

**==> picture [164 x 159] intentionally omitted <==**

**Figure 9. Gate Charge vs Gate-source Volatge Figure 10. Capacitance Variations** 

**==> picture [164 x 149] intentionally omitted <==**

**Figure 11. Normalized Gate Threshold Voltage vs. Temperature** 

**==> picture [164 x 149] intentionally omitted <==**

**==> picture [164 x 152] intentionally omitted <==**

**Figure 12. Normalized On Resistance vs. Temperature** 

**==> picture [164 x 149] intentionally omitted <==**

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2 Electrical characteristics 

**Figure 13. Source-drain Diode Forward Characteristics** 

**==> picture [164 x 151] intentionally omitted <==**

**Figure 14. Normalized BVDSS vs Temperature** 

**==> picture [164 x 147] intentionally omitted <==**

**Figure 15. Maximum Avalanche Energy vs Temperature** 

**==> picture [164 x 167] intentionally omitted <==**

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**STF8NK100Z - STP8NK100Z** 

3 Test circuits 

## **3 Test circuits** 

## **Figure 16. Switching Times Test Circuit For Resistive Load** 

**==> picture [213 x 88] intentionally omitted <==**

**Figure 18. Test Circuit For Indictive Load Switching and Diode Recovery Times** 

**==> picture [180 x 143] intentionally omitted <==**

**Figure 17. Gate Charge Test Circuit** 

**==> picture [182 x 144] intentionally omitted <==**

**Figure 20. Unclamped Inductive Load Test Circuit** 

**==> picture [164 x 109] intentionally omitted <==**

**Figure 19. Unclamped Inductive Waveform** 

**==> picture [164 x 134] intentionally omitted <==**

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4 Package mechanical data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

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4 Package mechanical data 

|||||||**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|**TO-220FP MECHANICAL DATA**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||
|**DIM.**||||||**mm.**||||||||**inch**||
|||||**MIN.**||**TYP**|||**MAX.**||**MIN.**|||**TYP.**|**MAX.**|
|A||||4.4|||||4.6||0.173||||0.181|
|B||||2.5|||||2.7||0.098||||0.106|
|D||||2.5|||||2.75||0.098||||0.108|
|E||||0.45|||||0.7||0.017||||0.027|
|F||||0.75|||||1||0.030||||0.039|
|F1||||1.15|||||1.7||0.045||||0.067|
|F2||||1.15|||||1.7||0.045||||0.067|
|G||||4.95|||||5.2||0.195||||0.204|
|G1||||2.4|||||2.7||0.094||||0.106|
|H||||10|||||10.4||0.393||||0.409|
|L2||||||16||||||||0.630||
|L3||||28.6|||||30.6||1.126||||1.204|
|L4||||9.8|||||10.6||.0385||||0.417|
|L5||||2.9|||||3.6||0.114||||0.141|
|L6||||15.9|||||16.4||0.626||||0.645|
|L7||||9|||||9.3||0.354||||0.366|
|Ø||||3|||||3.2||0.118||||0.126|
|||||||||||||||||
|||||||||||||||**E**||
|||||||||||||||**E**||
|||||||||||||||||
|**A**||||**H**||**D**<br>**L3**||||||||**G**<br>**G1**<br>**3**||
|||**B**<br>||||||||||||||
|||||||**L6**||||**F1**|**F**|||||
||||||||**L7**|||||||||
|||||**H**||||||||||||
|||||||||||||||||
|||||||||||||||||
||||||||||||**1 2 **<br>**F2**<br>**L4**|||||
||||||||**L2**|||||||||
|||||||||||**L5**||||||
|||||||||||||||||
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4 Package mechanical data 

||||||||||||**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.034<br>0.066<br>0.027<br>0.620<br>0.409<br>0.106<br>0.202<br>0.052<br>0.256<br>0.107<br>0.551<br>0.154<br>0.645<br>1.137<br>0.151<br>0.116|**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.034<br>0.066<br>0.027<br>0.620<br>0.409<br>0.106<br>0.202<br>0.052<br>0.256<br>0.107<br>0.551<br>0.154<br>0.645<br>1.137<br>0.151<br>0.116|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**T**|**O-220**|**MECHANICAL DATA**|||||||
||||||||||||||
||||||||||||||
||**DIM.**||||**mm.**||||||**inch**||
|||**MIN.**|||**TYP**|**MAX.**||**MIN.**|||**TYP.**|**MAX.**|
||A|4.40||||4.60||0.173||||0.181|
||b|0.61||||0.88||0.024||||0.034|
||b1|1.15||||1.70||0.045||||0.066|
||c|0.49||||0.70||0.019||||0.027|
||D|15.25||||15.75||0.60||||0.620|
||E|10||||10.40||0.393||||0.409|
||e|2.40||||2.70||0.094||||0.106|
||e1|4.95||||5.15||0.194||||0.202|
||F|1.23||||1.32||0.048||||0.052|
||H1|6.20||||6.60||0.244||||0.256|
||J1|2.40||||2.72||0.094||||0.107|
||L|13||||14||0.511||||0.551|
||L1|3.50||||3.93||0.137||||0.154|
||L20||||16.40||||||0.645||
||L30||||28.90||||||1.137||
||øP|3.75||||3.85||0.147||||0.151|
||Q|2.65||||2.95||0.104||||0.116|
||||||||||||||
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**STF8NK100Z - STP8NK100Z** 

5 Revision History 

## **5 Revision History** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Nov-2005|1|First release|



12/13 

**STF8NK100Z - STP8NK100Z** 

5 Revision History 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 

© 2005 STMicroelectronics - All rights reserved 

STMicroelectronics group of companies 

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 

**www.st.com** 

13/13 



## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stf8nk100z/mosfet-n-ch-1000v-6-5a-to220fp/dp/2098241)
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