# Power MOSFET, N Channel, 1 kV, 1.75 A, 2.7 ohm, TO-220FP, Through Hole ![Product image](https://novapart.co/image/farnell:1752090/) **URL**: https://novapart.co/products/STF5NK100Z/power-mosfet-n-channel-1-kv-175-a-27-ohm-to-220fp **SKU**: STF5NK100Z **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.7900 **Stock**: 10+ **Lead Time**: 113 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:1.75A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs:3.75V; P ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 30W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 30V | | Transistor Case Style | TO-220FP | | Drain Source Voltage Vds | 1kV | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1.75A | | Drain Source On State Resistance | 2.7ohm | | Gate Source Threshold Voltage Max | 3.75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1752090/) **STP5NK100Z, STF5NK100Z STW5NK100Z** N-channel 1000 V, 2.7 Ω , 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET **Features Type (@TVDSS JMAX) RDS(on)max ID** 3 2 STF5NK100Z 1000 V < 3.7 Ω 3.5 A * 4% 1 **TO-220 TO-220FP** STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 2 ■ Gate charge minimized 1 ■ Very low intrinsic capacitances **TO-247** ~~==~~ ■ Very good manufacturing repeatibility **Applications** ■ Switching application **Figure 1. Internal schematic diagram** D(2) **Description** The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripG(1) The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripG(1) based PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the S(3) revolutionary MDmesh™ products. AM01476v1 **Table 1. Device summary Order code Marking Package Packaging** STF5NK100Z F5NK100Z TO-220FP Tube STP5NK100Z P5NK100Z TO-220 Tube STW5NK100Z W5NK100Z TO-247 Tube ~~——~~ 1/15 May 2009 Doc ID 10850 Rev 5 _www.st.com_ |**Contents**|**STP5NK100Z, STF5NK100Z, STW5NK100Z**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| 2/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||**Unit**| |||**TO-220, TO-247**|**TO-220FP**|| |VDS|Drain-source voltage (VGS= 0)|1000||V| |VGS|Gate-source voltage|± 30||V| |ID|Drain current (continuous) at TC= 25°C|3.5|3.5(1)|A| |ID|Drain current (continuous) at TC=100°C|2.2|2.2(1)|A| |IDM
(2)|Drain current (pulsed)|14|14(1)|A| |PTOT|Total dissipation at TC= 25°C|125|30|W| ||Derating factor|1|0.24|W/°C| |VESD(G-S)|Gate source ESD
(HBM-C=100pF, R=1.5 kΩ)|4000||V| |dv/dt(3)|Peak diode recovery voltage slope|4.5||V/ns| |VISO|Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; Tc= 25°C)||2500|V| |TJ
Tstg|Operating junction temperature
Storage temperature|-55 to 150||°C| 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. ## **Table 3. Thermal data** |**Table 3.**|**Thermal data**|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||**Unit**| |||**TO-220, TO-247**|**TO-220FP**|| |Rthj-case|Thermal resistance junction-case max|1|4.2|°C/W| |Rthj-a|Thermal resistance junction-ambient max|62.5||°C/W| |Tl|Maximum lead temperature for soldering
purpose|300||°C| ## **Table 4. Avalanche characteristics** |**Table 4.**|**Avalanche characteristics**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |IAR|Avalanche current, repetitive or not-repetitive
(pulse width limited by TJMAX)|3.5|A| |EAS|Single pulse avalanche energy
(starting Tj=25 °C, Id=Iar, Vdd=50 V)|250|mJ| 3/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE=25°C unless otherwise specified) ## **Table 5. On/off states** |**Table 5.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0|1000|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= Max rating,
VDS= Max rating,
Tc = 125 °C|||1
50|µA
µA| |IGSS|Gate body leakage current
(VGS= 0)|VGS= ± 20 V|||±10|µA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V| |RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 1.75 A||2.7|3.7|Ω| ## **Table 6. Dynamic** |**Table 6.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |gfs
(1)|Forward transconductance|VDS=15 V, ID= 1.75 A|-|4||S| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS=25 V, f=1 MHz,
VGS=0|-|1154
106
21.3||pF
pF
pF| |Cosseq
(2)|Equivalent output
capacitance|VGS=0, VDS=0 V to 800 V|-|46.8||pF| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Off-voltage rise time
Fall time|VDD=500 V, ID= 1.75 A,
RG=4.7Ω,VGS=10 V
(see_Figure 21_)|-|22.5
7.7
51.5
19||ns
ns
ns
ns| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD=800 V, ID= 3.5 A
VGS=10 V
(see_Figure 22_)|-|42
7.3
21.7|59|nC
nC
nC| 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical characteristics** ## **Table 7. Source drain diode** |**Table 7.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ISD|Source-drain current||-||3.5|A| |ISDM
(1)|Source-drain current (pulsed)||-||14|A| |VSD
(2)|Forward on voltage|ISD= 3.5 A, VGS=0|-||1.6|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=30 V
(see_Figure 23_)|-|605
3.09
10.5||ns
µC
A| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=35 V, Tj=150 °C
(see_Figure 23_)|-|742
4.2
11.2||ns
µC
A| 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% ## **Table 8. Gate-source Zener diode** |**Table 8.**|**Gate-source Zener diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |BVGSO|Gate-source breakdown voltage|Igs=± 1 mA (open drain)|30|||V| The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP** **==> picture [155 x 149] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** **Figure 4. Safe operating area for TO-220** **Figure 5. Thermal impedance for TO-220** **==> picture [155 x 149] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** **Figure 6. Safe operating area for TO-247** **Figure 7. Thermal impedance for TO-247** **==> picture [155 x 149] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** 6/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical characteristics** ## **Figure 8. Output characteristics** ## **Figure 9. Transfer characteristics** **==> picture [143 x 143] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** **Figure 10. Transconductance** **Figure 11. Static drain-source on resistance** **==> picture [143 x 143] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** **Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations** **==> picture [143 x 143] intentionally omitted <==** **==> picture [143 x 143] intentionally omitted <==** 7/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage vs temperature** **==> picture [143 x 143] intentionally omitted <==** ## **Figure 16. Source-drain diode forward characteristics** **==> picture [143 x 143] intentionally omitted <==** **Figure 15. Normalized on resistance vs temperature** **==> picture [143 x 143] intentionally omitted <==** ## **Figure 17. Normalized BVdss vs temperature** **==> picture [143 x 143] intentionally omitted <==** ## **Figure 18. Maximum avalanche energy vs temperature** **==> picture [143 x 143] intentionally omitted <==** 8/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Test circuits** ## **3 Test circuits** **Figure 19. Unclamped inductive load test Figure 20. Unclamped inductive waveform circuit** **==> picture [165 x 131] intentionally omitted <==** **==> picture [165 x 131] intentionally omitted <==** **Figure 21. Switching times test circuit for resistive load** **Figure 22. Gate charge test circuit** **==> picture [203 x 85] intentionally omitted <==** **==> picture [165 x 131] intentionally omitted <==** **Figure 23. Test circuit for inductive load switching and diode recovery times** **==> picture [165 x 131] intentionally omitted <==** 9/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Package mechanical data** **==> picture [405 x 625] intentionally omitted <==** **----- Start of picture text -----**
TO-220FP mechanical data
mm
Dim.
Min. Typ. Ma.x
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.5
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dai 3 3.2
L7
E
A
B
D
Dia
L5
L6
F1 F2
F
H G
G1
L2 L4
L3
7012510_Rev_J
**----- End of picture text -----**
**==> picture [23 x 8] intentionally omitted <==** **----- Start of picture text -----**
11/15
**----- End of picture text -----**
Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Package mechanical data** ## **TO-220 mechanical data** |**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**| |---|---|---|---|---|---|---| ||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**| |A|4.40||4.60|0.173||0.181| |b|0.61||0.88|0.024||0.034| |b1|1.14||1.70|0.044||0.066| |c|0.48||0.70|0.019||0.027| |D|15.25||15.75|0.6||0.62| |D1||1.27|||0.050|| |E|10||10.40|0.393||0.409| |e|2.40||2.70|0.094||0.106| |e1|4.95||5.15|0.194||0.202| |F|1.23||1.32|0.048||0.051| |H1|6.20||6.60|0.244||0.256| |J1|2.40||2.72|0.094||0.107| |L|13||14|0.511||0.551| |L1|3.50||3.93|0.137||0.154| |L20||16.40|||0.645|| |L30||28.90|||1.137|| |∅P|3.75||3.85|0.147||0.151| |Q|2.65||2.95|0.104||0.116| **==> picture [274 x 304] intentionally omitted <==** 12/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Package mechanical data** ||||||**TO**|**TO**|**-247 Mechanical data**|**-247 Mechanical data**|**-247 Mechanical data**|**-247 Mechanical data**|**-247 Mechanical data**|**-247 Mechanical data**|**-247 Mechanical data**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||| ||**Dim.**||||||||||**mm.**||| ||||||**Min.**||||||**Typ**||**Max.**| ||A||||4.85||||||||5.15| ||A1||||2.20||||||||2.60| ||b||||1.0||||||||1.40| ||b1||||2.0||||||||2.40| ||b2||||3.0||||||||3.40| ||c||||0.40||||||||0.80| ||D||||19.85||||||||20.15| ||E||||15.45||||||||15.75| ||e||||||||||5.45||| ||L||||14.20||||||||14.80| ||L1||||3.7|0|||||||4.30| ||L2||||||||||18.50||| ||øP||||3.5|5|||||||3.65| ||øR||||4.5|0|||||||5.50| ||S||||||||||5.50||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| 13/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** **Revision history** ## **5 Revision history** **Table 9. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |12-Oct-2004|1|First release| |08-Sep-2005|2|Complete datasheet| |16-Dec-2005|3|Inserted ecopack indication| |16-Aug-2006|4|New template, no content change| |15-May-2009|5|Modified:_Section 2.1: Electrical characteristics (curves)_| 14/15 Doc ID 10850 Rev 5 **STP5NK100Z, STF5NK100Z, STW5NK100Z** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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