# Power MOSFET, N Channel, 650 V, 33 A, 0.07 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2098228/)

**URL**: https://novapart.co/products/STF42N65M5/power-mosfet-n-channel-650-v-33-a-007-ohm-to-220fp
**SKU**: STF42N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.3700
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098228/)

## **STx42N65M5** N-channel 650 V, 0.070 Ω , 33 A MDmesh™ V Power MOSFET in I[2] PAK, TO-220, TO-220FP, D[2] PAK and TO-247 

## **Features** 

|**Features**||||
|---|---|---|---|
|**Type**|**VDSS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|STB42N65M5<br>STF42N65M5<br>STI42N65M5<br>STP42N65M5<br>STW42N65M5|710 V<br>710 V<br>710 V<br>710 V<br>710 V|< 0.079Ω<br>< 0.079Ω<br>< 0.079Ω<br>< 0.079Ω<br>< 0.079Ω|33 A<br>33 A(1)<br>33 A<br>33 A<br>33 A|



1. Limited only by maximum temperature allowed 

- TO-220 worldwide best R DS(on) 

- Higher VDSS rating 

**==> picture [209 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 3<br>2 3 1 1 2<br>1<br>D²PAK TO-220<br>TO-220FP<br>1 [2] [3] 2 3<br>1<br>I²PAK<br>TO-247<br>**----- End of picture text -----**<br>


- High dv/dt capability 

- Excellent switching performance 

- Easy to drive 

- 100% avalanche tested 

## **Application** 

- Switching applications 

## **Description** 

MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. 

## **Figure 1. Internal schematic diagram** 

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## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB42N65M5<br>STF42N65M5<br>STI42N65M5<br>STP42N65M5<br>STW42N65M5|42N65M5<br>42N65M5<br>42N65M5<br>42N65M5<br>42N65M5|D²PAK<br>TO-220FP<br>I²PAK<br>TO-220<br>TO-247|Tape and reel<br>Tube<br>Tube<br>Tube<br>Tube|
|June 2009<br>Doc ID 15317 Rev 3<br>1/18||||



_www.st.com_ 

**Contents** 

**STx42N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220, TO-247**<br>**D²PAK, I²PAK**|**TO-220FP**||
|VGS|Gate- source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|33|33(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|20.8|20.8(1)|A|
|IDM<br>(2)|Drain current (pulsed)|132|132(1)|A|
|PTOT|Total dissipation at TC= 25 °C|190|40|W|
|IAR|Max current during repetitive or single pulse<br>avalanche (pulse width limited by TJMAX)|11||A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50V)|950||mJ|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)|--|2500|V|
|Tstg|Storage temperature|-55 to 150||°C|
|Tj|Max. operating junction temperature|150||°C|



1. Limited only by maximum temperature allowed 

2. Pulse width limited by safe operating area 

3. ISD ≤ 33 A, di/dt ≤ 400 A/µs, VPeak <  V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||||**Unit**|
|||**D²PAK **|**I²PAK **|**TO-220 **|**TO-247**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-<br>case max|0.66||||3.1|°C/W|
|Rthj-amb|Thermal resistance junction-<br>ambient max|--|62.5||50|62.5|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb<br>max|30|--|--|--|--|°C/W|
|Tl|Maximum lead temperature for<br>soldering purpose|300|||||°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

## **Table 4. On /off states** 

|**Table 4.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|650|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC=125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on|Static drain-source on<br>resistance|VGS= 10 V, ID= 16.5 A||0.070|0.079|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|4650<br>110<br>3.2|-|pF<br>pF<br>pF|
|Co(er)<br>(1)|Equivalent output<br>capacitance energy<br>related|VGS= 0, VDS= 0 to 80%<br>V(BR)DSS|-|100|-|pF|
|Co(tr)<br>(2)|Equivalent output<br>capacitance time<br>related|VGS= 0, VDS= 0 to 80%<br>V(BR)DSS|-|285|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|1.1|-|Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 520 V, ID= 16.5 A,<br>VGS= 10 V<br>(see_Figure 20_)|-|100<br>26<br>38|-|nC<br>nC<br>nC|



1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

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**Electrical characteristics** 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 400 V, ID= 20 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 19_)|-|61<br>24<br>65<br>13|-|ns<br>ns<br>ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||33<br>132|A<br>A|
|VSD (2)|Forward on voltage|ISD= 33 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 33 A, di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 24_)|-|400<br>7<br>35||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 33 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 24_)|-|532<br>10<br>38||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK D²PAK, I²PAK** 

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ID AM01565v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1ms<br>10ms<br>1<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for TO-247** 

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ID AM03246v1<br>(A)<br>100<br>10µs<br>10 100µs<br>1ms<br>10ms<br>1<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 6. Safe operating area for TO-220FP** 

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ID AM01566v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1 1ms<br>10ms<br>0.1<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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## **Figure 5. Thermal impedance for TO-247** 

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**Figure 7. Thermal impedance for TO-220FP** 

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**Electrical characteristics** 

## **Figure 8. Output characteristics** 

## **Figure 9. Transfer characteristics** 

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ID AM01589v1 ID AM01590v1<br>(A) (A)<br>80 80<br>VGS=10V<br>8V<br>70 70 VDS=20V<br>7.5V<br>60 60<br>50 50<br>7V<br>40 40<br>30 30<br>6.5V<br>20 20<br>10 10<br>6V<br>0 0<br>0 5 10 15 VDS(V) 3 4 5 6 7 8 9 VGS(V)<br>Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance<br>AM01569v1 AM01568v1<br>V(V)GS VGS V(V)DS RDS(on)(Ω)<br>10 500 0.076<br>VDS VGS=10V<br>0.074<br>8 400<br>VDD=520V 0.072<br>6 VGS=10V 300<br>ID=16.5A 0.070<br>4 200<br>0.068<br>2 100 0.066<br>0 0 0.064<br>0 20 40 60 80 100 120 Qg(nC) 0 10 20 30 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 12. Capacitance variations** 

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C AM01570v1<br>(pF)<br>10000<br>Ciss<br>1000<br>100<br>Coss<br>10<br>Crss<br>1<br>1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 13. Output capacitance stored energy** 

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Eoss AM03231v1<br>(µJ)<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


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**STx42N65M5** 

**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature** 

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VGS(th) AM01571v1 RDS(on) AM01573v1<br>(norm) (norm) ID = 16.5 A<br>VGS= 10 V<br>1.1<br>2.0<br>ID = 250 µA<br>1.0<br>1.5<br>0.9<br>1.0<br>0.8<br>0.7 0.5<br>0.6 0<br>-50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Source-drain diode forward characteristics** 

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VSD AM01574v1<br>(V)<br>1.0 TJ=-25°C<br>0.9<br>0.8<br>0.7<br>0.6 TJ=25°C<br>0.5<br>TJ=150°C<br>0.4<br>0.3<br>0.2<br>0 5 10 15 20 25 30 ISD(A)<br>**----- End of picture text -----**<br>


**Figure 17. Normalized BVDSS vs temperature** 

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BVDSS AM01572v1<br>(norm)<br>1.05<br>1.00<br>ID = 1 mA<br>0.95<br>0.90<br>-50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 18. Switching losses vs gate resistance (1)** 

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AM01575v1<br>E<br>(µJ) Eon<br>ID=20A<br>600<br>VDD=400V<br>L=50µH<br>500<br>400<br>300 Eoff<br>200<br>100<br>0<br>0 5 10 15 20 25 30 35 40 45 RG(Ω)<br>**----- End of picture text -----**<br>


1. Eon including reverse recovery of a SiC diode 

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**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load** 

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**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load switching and diode recovery times** 

**Figure 22. Unclamped inductive load test circuit** 

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**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform** 

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V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-220 mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.48||0.70|0.019||0.027|
|D|15.25||15.75|0.6||0.62|
|D1||1.27|||0.050||
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.051|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|∅P|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|



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**Package mechanical data** 

## **TO-247 mechanical data** 

|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|
|---|---|---|---|
|||||
|||||
|**Dim.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|||
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|øP|3.55||3.65|
|øR|4.50||5.50|
|S||5.50||



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**Package mechanical data** 

## **TO-220FP mechanical data** 

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mm<br>Dim.<br>Min. Typ. Ma.x<br>A 4.4 4.6<br>B 2.5 2.7<br>D 2.5 2.75<br>E 0.45 0.7<br>F 0.75 1<br>F1 1.15 1.70<br>F2 1.15 1.5<br>G 4.95 5.2<br>G1 2.4 2.7<br>H 10 10.4<br>L2 16<br>L3 28.6 30.6<br>L4 9.8 10.6<br>L5 2.9 3.6<br>L6 15.9 16.4<br>L7 9 9.3<br>Dai 3 3.2<br>L7<br>E<br>A<br>B<br>D<br>Dia<br>L5<br>L6<br>F1 F2<br>F<br>H G<br>G1<br>L2 L4<br>L3<br>7012510_Rev_J<br>**----- End of picture text -----**<br>


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**STx42N65M5** 

**Package mechanical data** 

## **I²PAK (TO-262) mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|A1|2.40||2.72|0.094||0.107|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.49||0.70|0.019||0.027|
|c2|1.23||1.32|0.048||0.052|
|D|8.95||9.35|0.352||0.368|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|E|10||10.40|0.393||0.410|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L2|1.27||1.40|0.050||0.055|



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**Package mechanical data** 

## **D²PAK (TO-263) mechanical data** 

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**----- Start of picture text -----**<br>
mm inch<br>Dim<br>Min Typ Max Min Typ Max<br>A 4.40 4.60 0.173 0.181<br>A1 0.03 0.23 0.001 0.009<br>b 0.70 0.93 0.027 0.037<br>b2 1.14 1.70 0.045 0.067<br>c 0.45 0.60 0.017 0.024<br>c2 1.23 1.36 0.048 0.053<br>D 8.95 9.35 0.352 0.368<br>D1 7.50 0.295<br>E 10 10.40 0.394 0.409<br>E1 8.50 0.334<br>e 2.54 0.1<br>e1 4.88 5.28 0.192 0.208<br>H 15 15.85 0.590 0.624<br>J1 2.49 2.69 0.099 0.106<br>L 2.29 2.79 0.090 0.110<br>L1 1.27 1.40 0.05 0.055<br>L2 1.30 1.75 0.051 0.069<br>R 0.4 0.016<br>V2 0° 8° 0° 8°<br>0079457_M<br>**----- End of picture text -----**<br>


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**STx42N65M5** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**==> picture [96 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
D [2] PAK FOOTPRINT<br>**----- End of picture text -----**<br>


## TAPE AND REEL SHIPMENT 

**==> picture [398 x 356] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>mm inch<br>7 neces ete “| i T<br>DIM.<br>MIN. MAX. MIN. MAX.<br>. A 330 12.992<br>| | a<br>B 1.5 0.059<br>ans c i<br>|, VY, at slot location C 12.8 13.2 0.504 0.520<br>D 20.2 0795<br>G 24.4 26.4 0.960 1.039<br>N 100 3.937<br>in core for at hub<br>tape start T 30.4 1.197<br>| Full radius / Tape slot —G measured<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>1000 1000<br>mm inch<br>DIM.<br>MIN. MAX. MIN. MAX.<br>—— —<br>A0 a 10.5 a 10.7 0.413 ee 0.421 kK Pp pe, 7 10 pitches cumulative<br>B0 15.7 15.9 0.618 0.626<br>D 1.5 1.6 0.059 0.063<br>D1 1.59 1.61 0.062 0.063<br>E 1.65 1.85 0.065 0.073<br>a F 11.4 11.6 0.449 0.456 | yt PetalI ‘\<br>ee ee ee As | P\aNN | Center line<br>K0 4.8 5.0 0.189 0.197<br>P0 3.9 4.1 0.153 0.161<br>a ee ee ee User Direction of Feed -<br>PFtT P1 11.9 12.1 0.468 0.476 UeTRL<br>P2 1.9 2.1 0.075 0.082<br>R 50 1.574<br>PTT T 0.25 0.35 0.0098 0.0137<br>W 23.7 24.3 0.933 0.956<br>**----- End of picture text -----**<br>


16/18 Doc ID 15317 Rev 3 ~~© 2~~ 

**STx42N65M5** 

**Revision history** 

## **6 Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Jan-2009|1|First release|
|15-May-2009|2|Updated figures_9_,_10_,_11_and_17_|
|12-Jun-2009|3|_Figure 15_has been updated|



17/18 

Doc ID 15317 Rev 3 

**STx42N65M5** 

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18/18 

Doc ID 15317 Rev 3 



## Links

- [View this product on Novapart](https://novapart.co/products/STF42N65M5/power-mosfet-n-channel-650-v-33-a-007-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf42n65m5/mosfet-n-ch-650v-33a-to-220fp/dp/2098228)
---

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