# Power MOSFET, N Channel, 600 V, 34 A, 0.078 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2807262/)

**URL**: https://novapart.co/products/STF40N60M2/power-mosfet-n-channel-600-v-34-a-0078-ohm-to
**SKU**: STF40N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2400
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.078ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807262/)

**STB40N60M2, STP40N60M2, STW40N60M2** ~~soe~~ N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in D[2] PAK, TO-220 and TO-247 packages 

− **Datasheet production data** 

**Features** TAB TAB **Order code VDS @ TJmax RDS(on) max ID** 2 3 STB40N60M2 1 3 STP40N60M2 650 V 0.088 Ω 34 A **D[2] PAK** 1[2] **TO-220** STW40N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested e 1 2 3 ~~=I~~ • Zener-protected **TO-247 Applications Figure 1. Internal schematic diagram** • Switching applications 

- LLC converters, resonant converters 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

**==> picture [33 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packing**|
|---|---|---|---|
|STB40N60M2|40N60M2|D2PAK|Tape and reel|
|STP40N60M2||TO-220|Tube|
|STW40N60M2||TO-247||



August 2016 

DocID024932 Rev 4 

1/21 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB40N60M2, STP40N60M2, STW40N60M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>D2PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>TO-220 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3<br>TO-247 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|34|A|
|ID|Drain current (continuous) at TC= 100 °C|22|A|
|IDM<br>(1)|Drain current (pulsed)|136|A|
|PTOT|Total dissipation at TC= 25 °C|250|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature range|- 55 to 150|°C|
|Tj|Operating junction temperature range||°C|



1. Pulse width limited by safe operating area. 

2. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. 

3. VDS ≤ 480 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**D2PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistance junction-case|0.50|||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb(1)|30|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|50|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not<br>repetitive (pulse width limited by Tjmax)|6|A|
|EAS|Single pulse avalanche energy<br>(starting Tj=25°C, ID= IAR; VDD= 50 V)|500|mJ|



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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 600 V|||1|µA|
|||VGS= 0, VDS= 600 V,<br>TC= 125 °C(1)|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 17 A||0.078|0.088|Ω|



1. Defined by design, not subject to production test 

**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|2500|-|pF|
|Coss|Output capacitance||-|117|-|pF|
|Crss|Reverse transfer<br>capacitance||-|2.4|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0|-|342|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0|-|4.4|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 34 A,<br>VGS= 10 V<br>(see_Figure 17_)|-|57|-|nC|
|Qgs|Gate-source charge||-|10|-|nC|
|Qgd|Gate-drain charge||-|25.5|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 34 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_and<br>_Figure 21_)|-|20.5|-|ns|
|tr|Rise time||-|13.5|-|ns|
|td(off)|Turn-off-delay time||-|96|-|ns|
|tf|Fall time||-|11|-|ns|



**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-|34||A|
|ISDM (1)|Source-drain current (pulsed)||-|136||A|
|VSD (2)|Forward on voltage|ISD= 34 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 34 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 18_)|-|440||ns|
|Qrr|Reverse recovery charge||-|8.2||µC|
|IRRM|Reverse recovery current||-|37||A|
|trr|Reverse recovery time|ISD= 34 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)|-|568||ns|
|Qrr|Reverse recovery charge||-|11.5||µC|
|IRRM|Reverse recovery current||-|40.5||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [462 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Safe operating area for D [2] PAK and    Figure 3. Thermal impedance D [2] PAK and<br>TO-220 TO-220<br>ID AM16098v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1ms<br>10ms<br>1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [462 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247<br>ID AM16099v1<br>(A)<br>100<br>10µs<br>100µs<br>10<br>1ms<br>10ms<br>1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>Figure 6. Output characteristics Figure 7. ransfer characteristics<br>AM16100v1 AM16101v1<br>ID (A) ID<br>90 VGS=7, 8, 9, 10V (A) V DS =18V<br>80 80<br>70 70<br>6V<br>60 60<br>50 50<br>40 40<br>30 30<br>5V<br>20 20<br>10 10<br>4V<br>0 0<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


6/21 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM16102v1<br>VDS<br>(V)<br>VDD=480V (V)<br>12<br>VDS ID=34A 500<br>10<br>400<br>8<br>300<br>6<br>200<br>4<br>100<br>2<br>0 0<br>0 10 20 30 40 50 60 Qg(nC)<br>**----- End of picture text -----**<br>


**Figure 10. Capacitance variations** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM16104v1<br>(pF)<br>10000<br>Ciss<br>1000<br>100<br>Coss<br>10<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized gate threshold voltage vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15718v1<br>(norm)<br>1.1 I D =250µA<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 9. Static drain-source on-resistance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16103v1<br>RDS(on)<br>(Ω)<br>VGS=10V<br>0.082<br>0.081<br>0.080<br>0.079<br>0.078<br>0.077<br>0.076<br>0.075<br>0 4 8 12 16 20 24 28 ID(A)<br>**----- End of picture text -----**<br>


**Figure 11. Output capacitance stored energy** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM16105v1<br>(µJ)<br>15<br>10<br>5<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15719v1<br>(norm)<br>ID=17 A<br>2.1<br>1.7<br>1.3<br>0.9<br>0.5<br>-50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Electrical characteristics** 

**Figure 14. Normalized V(BR)DSS vs temperature** 

**==> picture [211 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15714v1<br>V(BR)DSS<br>(norm)<br>ID=1 mA<br>1.1<br>1.06<br>1.02<br>0.98<br>0.94<br>0.9<br>-50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 15. Source-drain diode forward vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD240920132025FSR<br>VSD<br>(V)<br>1 TJ= -50°C<br>0.9<br>TJ= 25°C<br>0.8<br>0.7 TJ= 150°C<br>0.6<br>0.5<br>0 6 12 18 24 30 ISD(A)<br>**----- End of picture text -----**<br>


8/21 

DocID024932 Rev 4 

**STB40N60M2, STP40N60M2, STW40N60M2** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [462 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Switching times test circuit for  Figure 17. Gate charge test circuit<br>resistive load VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3 IG=CONST<br>μF μF VDD Vi=20V=VGMAX 100Ω D.U.T.<br>VD 2200<br>VGS μF 2.7kΩ VG<br>RG D.U.T.<br>47kΩ<br>PW<br>1kΩ<br>PW<br>AM01469v1<br>AM01468v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D VD 2200 3.3<br>G D.U.T. FASTDIODE L=100μH μF μF VDD<br>S B 3.3 1000 ID<br>25 Ω B B D μF μF VDD<br>G<br>Vi D.U.T.<br>RG S<br>Pw<br>AM01471v1<br>AM01470v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/21 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

## **4.1 D[2] PAK (TO-263) package information** 

**==> picture [236 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. D²PAK (TO-263) type A package outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 460] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������������<br>**----- End of picture text -----**<br>


DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

**Table 9. D²PAK (TO-263) type A mechanical data** 

||**Table 9. D²PAK(TO-263) type A mechanical data**|**Table 9. D²PAK(TO-263) type A mechanical data**|**Table 9. D²PAK(TO-263) type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



12/21 

DocID024932 Rev 4 

**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

## **Figure 23. D²PAK footprint[(a)]** 

**==> picture [405 x 352] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters 

DocID024932 Rev 4 

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**Package information** 

## **4.2 TO-220 package information** 

## **Figure 24. TO-220 type A package outline** 

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**Package information** 

**Table 10. TO-220 type A mechanical data** 

||**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

## **4.3 TO-247 package information** 

**==> picture [163 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. TO-247 package outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


16/21 

DocID024932 Rev 4 

**STB40N60M2, STP40N60M2, STW40N60M2** 

**Package information** 

**Table 11. TO-247 package mechanical data** 

||**Table 11. TO-247package mechanical data**|**Table 11. TO-247package mechanical data**|**Table 11. TO-247package mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Packing information** 

## **5 Packing information** 

**==> picture [74 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. Tape<br>**----- End of picture text -----**<br>


**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>iw So0 00 00 51 6 ome<br>F<br>K0 W<br>B1 B0<br>A E I RI RI B IE,<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ——<br>User direction of feed<br>R<br>sogtees<br>[Se EEE EE<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


18/21 

DocID024932 Rev 4 

**STB40N60M2, STP40N60M2, STW40N60M2** 

**Packing information** 

**==> picture [405 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 12. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



DocID024932 Rev 4 

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**STB40N60M2, STP40N60M2, STW40N60M2** 

**Revision history** 

## **6 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Jul-2013|1|First release.|
|23-Sep-2013|2|– Added: TO-220FP and I2PAKFP packages<br>– Inserted: VISOin_Table 2_<br>– Modified: values in_Table 4_, the entire typical values in Table_6, 7_<br>and_8_<br>– Updated:_Section 4: Package mechanical data._<br>– Minor text changes|
|13-May-2014|3|– The part numbers STF40N60M2 and STFI40N60M2 have been<br>moved to a separate datasheet<br>– Minor text changes|
|09-Aug-2016|4|Updated title, features and description in cover page.<br>Updated_Table 2: Absolute maximum ratings_,_Table 5: On /off states_<br>and_Table 8: Source drain diode_.<br>Updated_Section 4.1: D2PAK (TO-263) package information_and<br>_Section 4.2: TO-220 package information_.<br>Minor text changes.|



20/21 

DocID024932 Rev 4 

**STB40N60M2, STP40N60M2, STW40N60M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2016 STMicroelectronics – All rights reserved 

DocID024932 Rev 4 

21/21 



## Links

- [View this product on Novapart](https://novapart.co/products/STF40N60M2/power-mosfet-n-channel-600-v-34-a-0078-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf40n60m2/mosfet-n-ch-600v-34a-to-220fp/dp/2807262)
---

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