# Power MOSFET, N Channel, 620 V, 2.5 A, 2.5 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2098225/)

**URL**: https://novapart.co/products/STF3LN62K3/power-mosfet-n-channel-620-v-25-a-ohm-to-220fp
**SKU**: STF3LN62K3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4820
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V;

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 20W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 620V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 2.5ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098225/)

## **STD3LN62K3, STF3LN62K3 STP3LN62K3, STU3LN62K3** N-channel 620 V, 2.5 Ω ,  2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK 

## **Features** 

|**Features**<br>■<br>100% avalanche tested<br>■<br>Extremely high dv/dt capability<br>■<br>Very low intrinsic capacitance<br>**Order codes**<br>**VDSS**<br>**RDS(on)**<br>**max**<br>**ID**<br>**PD**<br>STD3LN62K3<br>STF3LN62K3<br>STP3LN62K3<br>STU3LN62K3<br>620 V<br>< 3Ω<br>2.5 A<br>2.5 A(1)<br>2.5 A<br>2.5 A<br>1.<br>Limited by package<br>45 W<br>20 W<br>45 W<br>45 W|3<br>2<br>1<br>1<br>2<br>3<br>1<br>3<br>**TO-220**<br>**DPAK**<br>**TO-220FP**<br>**IPAK**<br>1<br>2<br>3||
|---|---|---|



- Very low intrinsic capacitance 

- Improved diode reverse recovery characteristics 

- Zener-protected 

## **Application** 

Switching applications 

## **Description** 

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. 

## **Figure 1. Internal schematic diagram** 

**==> picture [220 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD3LN62K3|3LN62K3|DPAK|Tape and reel|
|STF3LN62K3||TO-220FP|Tube|
|STP3LN62K3||TO-220||
|STU3LN62K3||IPAK||



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_www.st.com_ 

|**Contents**|**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)               . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



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**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**|**DPAK**<br>**IPAK**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|620|||V|
|VGS|Gate- source voltage|± 30|||V|
|ID|Drain current (continuous) at TC= 25 °C|2.5||2.5(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|1.6||1.6(1)|A|
|IDM<br>(2)|Drain current (pulsed)|10||10(1)|A|
|PTOT|Total dissipation at TC= 25 °C|45||20|W|
||Derating factor|0.36||0.16|W/°C|
|VESD(G-S)|Gate source ESD<br>(HBM-C = 100 pF, R = 1.5 kΩ)|2500|||V|
|dv/dt(3)|Peak diode recovery voltage slope|12|||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)|||2500|V|
|Tstg|Storage temperature|-55 to 150|||°C|
|Tj|Max. operating junction temperature|150|||°C|



1. Limited by package 

2. Pulse width limited by safe operating area 

3. ISD ≤   2.5 A, di/dt   ≤   400 A/µs, peak VDS < V(BR)DSS, VDD = 80% V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**TO-220**|**DPAK **|**IPAK **|**TO-220FP**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|2.78|||6.25|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max||50|||°C/W|
|Rthj-amb|Thermal resistance junction-amb max|62.5||100|62.5|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300||300||°C|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max value**|**Unit**|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tjmax)|2.5|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|90|mJ|



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**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

## **Table 5. On /off states** 

|**Table 5.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|620|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC=125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on|Static drain-source on<br>resistance|VGS= 10 V, ID= 1.25 A||2.5|3|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 50 V, f = 1 MHz, VGS= 0|-|386<br>30<br>5|-|pF<br>pF<br>pF|
|Co(tr)<br>(1)|Eq. capacitance time<br>related|VGS= 0, VDS= 0 to 496 V|-|20|-|pF|
|Co(er)<br>(2)|Eq. capacitance<br>energy related||-|28|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|7|-|Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 496 V, ID= 2.5 A,<br>VGS= 10 V<br>(see_Figure 20_)|-|17<br>2.7<br>10.7|-|nC<br>nC<br>nC|



1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 310 V, ID=1.25 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 19_)|-|9<br>7<br>30<br>27|-|ns<br>ns<br>ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||2.5<br>10|A<br>A|
|VSD (2)|Forward on voltage|ISD= 2.5 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 2.5 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 24_)|-|240<br>1200<br>10||ns<br>nC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 2.5 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 24_)|-|265<br>1400<br>11||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

## **Table 9. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO<br>(1)|Gate-source breakdown<br>voltage|Igs= ± 1 mA (open drain)|30|-||V|



1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM08936v1<br>(A) Tj=150°C<br>Tc=25°C<br>Single pulse<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Safe operating area for TO-220FP** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM08937v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [173 x 167] intentionally omitted <==**

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [173 x 167] intentionally omitted <==**

**Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM08938v1<br>(A) Tj=150°C<br>Tc=25°C<br>Single pulse<br>10<br>10µs<br>1 100µs<br>1ms<br>10ms<br>0.1<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [168 x 169] intentionally omitted <==**

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**Electrical characteristics** 

## **Figure 8. Output characteristics** 

## **Figure 9. Transfer characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08939v1<br>ID<br>(A)<br>6<br>VGS=10V<br>5<br>7V<br>4<br>3<br>2<br>6V<br>1<br>5V<br>0<br>0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08940v1<br>ID (A)<br>4.0 VDS=15V<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 1 2 3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Gate charge vs gate-source voltage Figure 11.** 

## **Static drain-source on resistance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM08941v1<br>(V)<br>12 VDS VDD=496V VGS<br>ID=2.5A 500<br>10<br>400<br>8<br>300<br>6<br>200<br>4<br>100<br>2<br>0 0<br>0 5 10 15 Qg(nC)<br>**----- End of picture text -----**<br>


**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08942v1<br>RDS(on)<br>(Ω)<br>2.9 VGS=10V<br>2.8<br>2.7<br>2.6<br>2.5<br>2.4<br>2.3<br>2.2<br>0 0.5 1.0 1.5 2.0 2.5 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 12. Capacitance variations** 

## **Figure 13. Output capacitance stored energy** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM08943v1<br>(pF)<br>1000<br>Ciss<br>100<br>10 Coss<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM08944v1<br>(µJ)<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 VDS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature** 

**==> picture [463 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM08945v1 RDS(on) AM08946v1<br>(norm) (norm) ID=1.2A<br>1.10 VGS=10V<br>2.5<br>1.00 2.0<br>1.5<br>0.90<br>1.0<br>0.80<br>0.5<br>0.70 0.0<br>-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Normalized BVDSS vs temperature** 

**Figure 17. Source-drain diode forward characteristics** 

**==> picture [463 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
BVDSS AM08947v1 VSD AM08948v1<br>(norm) (V)<br>1.0<br>1.10 TJ=-50°C<br>0.9<br>1.05<br>0.8<br>0.7 TJ=25°C<br>1.00<br>0.6<br>TJ=150°C<br>0.95<br>0.5<br>0.90 0.4<br>-75 -25 25 75 125 TJ(°C) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A)<br>**----- End of picture text -----**<br>


**Figure 18. Maximum avalanche energy vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08949v1<br>EAS(mJ)<br>100<br>90 ID=2.5 A<br>80 VDD=50 V<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load** 

**==> picture [463 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit** 

**==> picture [463 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform** 

**==> picture [463 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

**Table 10. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1|||
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 25. DPAK (TO-252) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 11. IPAK (TO-251) mechanical data** 

|**Table 11.**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ**|**max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.3||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10o||



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**Package mechanical data** 

**Figure 26. IPAK (TO-251) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_H AM09214V1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 12. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 27. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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Doc ID 18452 Rev 1 

**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Package mechanical data** 

## **Table 13. TO-220FP mechanical data** 

|**Dim.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



## **Figure 28. TO-220FP drawing** 

**==> picture [405 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
L7<br>E<br>A<br>B<br>D<br>Dia<br>L5<br>L6<br>F1 F2<br>F<br>H G<br>G1<br>L2 L4<br>L3<br>7012510_Rev_K<br>**----- End of picture text -----**<br>


**==> picture [271 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Doc ID 18452 Rev 1 17/21<br>**----- End of picture text -----**<br>


**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 14. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**Figure 29. DPAK footprint[(a)]** 

**==> picture [405 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


a. All dimension are in millimeters 

18/21 

Doc ID 18452 Rev 1 

**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Packaging mechanical data** 

**==> picture [395 x 327] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 30. Tape for DPAK (TO-252)<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>| paeneedooeas F<br>K0 W<br>B1 B0<br>f ekaciainiaioy<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 —_—_—_—_»<br>User direction of feed<br>R<br>ELSES<br>—_——_—_» Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


**==> picture [39 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 31. Reel for DPAK (TO-252)** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


19/21 

Doc ID 18452 Rev 1 

**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

**Revision history** 

## **6 Revision history** 

**Table 15. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Feb-2011|1|First release.|



20/21 

Doc ID 18452 Rev 1 

**STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3** 

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Doc ID 18452 Rev 1 



## Links

- [View this product on Novapart](https://novapart.co/products/STF3LN62K3/power-mosfet-n-channel-620-v-25-a-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf3ln62k3/mosfet-n-ch-620v-2-5a-to-220fp/dp/2098225)
---

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