# Power MOSFET, N Channel, 650 V, 32 A, 0.093 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STF35N65DM2/power-mosfet-n-channel-650-v-32-a-0093-ohm-to
**SKU**: STF35N65DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.7800
**Stock**: 50+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh DM2 |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 32A |
| Drain Source On State Resistance | 0.093ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2987016/)
## **STF35N65DM2**
## N-channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
Datasheet - production data
## **Features**
**==> picture [223 x 24] intentionally omitted <==**
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||||||
|---|---|---|---|---|
|Order code|VDS|RDS(on) max.|ID|PTOT|
|STF35N65DM2|650 V|0.110 Ω|32 A|40 W|
**----- End of picture text -----**
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
**==> picture [42 x 8] intentionally omitted <==**
**----- Start of picture text -----**
TO-220FP
**----- End of picture text -----**
- Extremely high dv/dt ruggedness
- Zener-protected
**Figure 1: Internal schematic diagram**
## **Applications**
**==> picture [403 x 214] intentionally omitted <==**
**----- Start of picture text -----**
|||||
|---|---|---|---|
|D(2)||Switching applications|
|Description|
|This high voltage N-channel Power MOSFET is|
|part of the MDmesh™ DM2 fast recovery diode|
|G(1)|series. It offers very low recovery charge (Qrrrr)|
|and time (trr) combined with low RDS(on)rr) combined with low RDS(on)) combined with low RDS(on)DS(on), rendering|
|it suitable for the most demanding high efficiency|
|converters and ideal for bridge topologies and|
|ZVS phase-shift converters.|
|S(3)|AM15572v1_no_tab|
|Table 1: Device summary|
|Order code|Marking|Package|Packing|
|STF35N65DM2|35N65DM2|TO-220FP|Tube|
**----- End of picture text -----**
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrrrr) and time (trr) combined with low RDS(on)rr) combined with low RDS(on)) combined with low RDS(on)DS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
This is information on a product in full production.
_www.st.com_
December 2017 DocID030873 Rev 2
1/13
|**Contents**
**STF35N65DM2**|**Contents**
**STF35N65DM2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1
TO-220FP package information ...................................................... 10|
|**5**|**Revision history ............................................................................ 12**|
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DocID030873 Rev 2
**STF35N65DM2**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at Tcase= 25 °C|32|A|
||Drain current (continuous) at Tcase= 100 °C|20||
|IDM_(1)_|Drain current (pulsed)|90|A|
|PTOT|Total dissipation at Tcase= 25 °C|40|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|50|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50||
|VISO|Insulation withstand voltage (RMS) from all three leads to external
heat-sink (t = 1 s; Tc= 25 °C)|2.5|kV|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||
## **Notes:**
(1)Pulse width is limited by safe operating area.
(2)ISD ≤ 32 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
(3)VDS ≤ 520 V
## **Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|3.1|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5||
## **Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive|4|A|
|EAS_(1)_|Singlepulse avalanche energy|1150|mJ|
## **Notes:**
(1)Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
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**STF35N65DM2**
**Electrical characteristics**
## **2 Electrical characteristics**
(Tcase = 25 °C unless otherwise specified)
**Table 5: Static**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 650 V|||1|µA|
|||VGS= 0 V, VDS= 650 V,
Tcase= 125 °C_(1)_|||100||
|IGSS|Gate-body leakage
current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 16 A||0.093|0.110|Ω|
## **Notes:**
(1)Defined by design, not subject to production test.
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|2540|-|pF|
|Coss|Output capacitance||-|115|-||
|Crss|Reverse transfer
capacitance||-|2.5|-||
|Coss eq._(1)_|Equivalent output
capacitance|VDS= 0 to 520 V, VGS= 0 V|-|204|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID= 0 A|-|4.2|-|Ω|
|Qg|Totalgate charge|VDD= 520 V, ID= 32 A, VGS= 0
to 10 V (see_Figure 15: "Test_
_circuit for gate charge behavior"_)|-|56.3|-|nC|
|Qgs|Gate-source charge||-|12.7|-||
|Qgd|Gate-drain charge||-|27.6|-||
## **Notes:**
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 325 V, ID= 16 A,
RG= 4.7 Ω, VGS= 10 V (see
_Figure 14: "Test circuit for_
_resistive load switching times"_
and_Figure 19: "Switching time_
_waveform"_)|-
-
-
-|23.4|-|ns|
|tr|Rise time|||23|-||
|td(off)|Turn-off delaytime|||72|-||
|tf|Fall time|||10.4|-||
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**Electrical characteristics**
||**Table 8: Source-drain diode**|**Table 8: Source-drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||32|A|
|ISDM_(1)_|Source-drain current
(pulsed)||-||90|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 32 A|-||1.6|V|
|trr|Reverse recoverytime|ISD= 32 A, di/dt = 100 A/µs,
VDD= 60 V (see_Figure 16: "Test_
_circuit for inductive load_
_switching and diode recovery_
_times"_)|-|100||ns|
|Qrr|Reverse recovery
charge||-|0.42||µC|
|IRRM|Reverse recovery
current||-|8.4||A|
|trr|Reverse recoverytime|ISD= 32 A, di/dt = 100 A/µs,
VDD= 60 V, Tj= 150 °C (see
_Figure 16: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|205||ns|
|Qrr|Reverse recovery
charge||-|1.8||µC|
|IRRM|Reverse recovery
current||-|17.6||A|
## **Notes:**
(1)Pulse width is limited by safe operating area.
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
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**STF35N65DM2**
## **Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area**
**==> picture [194 x 162] intentionally omitted <==**
**Figure 3: Thermal impedance**
**==> picture [169 x 169] intentionally omitted <==**
**Figure 4: Output characteristics**
**==> picture [177 x 162] intentionally omitted <==**
**Figure 5: Transfer characteristics**
**==> picture [177 x 162] intentionally omitted <==**
**Figure 6: Gate charge vs gate-source voltage**
**==> picture [183 x 163] intentionally omitted <==**
**Figure 7: Static drain-source on-resistance**
**==> picture [184 x 165] intentionally omitted <==**
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**Electrical characteristics**
**==> picture [438 x 200] intentionally omitted <==**
**----- Start of picture text -----**
Figure 9: Normalized gate threshold voltage vs
Figure 8: Capacitance variations
temperature
**----- End of picture text -----**
**Figure 10: Normalized on-resistance vs temperature**
**==> picture [189 x 163] intentionally omitted <==**
**Figure 11: Normalized V(BR)DSS vs temperature**
**==> picture [189 x 163] intentionally omitted <==**
**==> picture [450 x 200] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13: Source- drain diode forward
Figure 12: Output capacitance stored energy
characteristics
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**STF35N65DM2**
**Test circuits**
## **3 Test circuits**
**==> picture [416 x 586] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Test circuit for resistive load Figure 15: Test circuit for gate charge
switching times behavior
Figure 16: Test circuit for inductive load
Figure 17: Unclamped inductive load test
switching and diode recovery times circuit
Figure 19: Switching time waveform
Figure 18: Unclamped inductive waveform
**----- End of picture text -----**
**==> picture [94 x 8] intentionally omitted <==**
**----- Start of picture text -----**
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**STF35N65DM2**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**STF35N65DM2**
**Package information**
## **4.1 TO-220FP package information**
**==> picture [161 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Figure 20: TO-220FP package outline
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**==> picture [406 x 574] intentionally omitted <==**
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7012510_Rev_12_B
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**Package information**
**Table 9: TO-220FP package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
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**STF35N65DM2**
**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Jul-2017|1|Initial release|
|04-Dec-2017|2|Document status changed from preliminary to production data.
Updated_Table 2: "Absolute maximum ratings"_and_Table 8:_
_"Source-drain diode"_.
Updated_Figure 2: "Safe operating area"_.
Minor text changes.|
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**STF35N65DM2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
DocID030873 Rev 2
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