# Power MOSFET, N Channel, 100 V, 24 A, 0.02 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STF30N10F7/power-mosfet-n-channel-100-v-24-a-002-ohm-to-220fp
**SKU**: STF30N10F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6010
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 4.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3367038/)
## **STF30N10F7**
## N-channel 100 V, 0.02 Ω typ., 24 A STripFET™ F7 Power MOSFET in a TO-220FP package
Datasheet - production data
## **Features**
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
## **Applications**
- Switching applications
## **Description**
**==> picture [42 x 7] intentionally omitted <==**
**----- Start of picture text -----**
TO-220FP
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**Figure 1: Internal schematic diagram**
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STF30N10F7|30N10F7|TO-220FP|Tube|
_www.st.com_
September 2016 This is information on a product in full production.
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|**Contents**
**STF30N10F7**|**Contents**
**STF30N10F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1
TO-220FP type A package information ........................................... 10|
|**5**|**Revision history ............................................................................ 12**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|100|V|
|VGS|Gate source voltage|20|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|24|A|
|ID_(1)_|Drain current (continuous) at TC= 100 °C|16|A|
|IDM_(1)(2)_|Drain current (pulsed)|96|A|
|PTOT|Total dissipation at TC= 25 °C|25|W|
|VISO|Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; TC=25 °C)|2500|V|
|TJ|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||
## **Notes:**
- (1)Current is limited by package.
- (2)Pulse width limited by safe operating area.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|6|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5|°C/W|
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**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
**Table 4: On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source
breakdown voltage|VGS= 0 V, ID= 250 µA|100|||V|
|IDSS|Zero gate voltage
drain current|VGS= 0 V , VDS=100 V|||1|µA|
|||VGS= 0 V, VDS=100 V,
TC= 125 °C_(1)_|||100|µA|
|IGSS|Gate-body leakage
current|VDS= 0 V, VGS= +20 V|||100|nA|
|VGS(th)|Gate threshold
voltage|VDS= VGS, ID= 250 μA|2.5||4.5|V|
|RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 16 A||0.02|0.024|Ω|
## **Notes:**
(1)Defined by design, not subject to production test
**Table 5: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz,VGS= 0 V|-|1270|-|pF|
|Coss|Output capacitance||-|290|-|pF|
|Crss|Reverse transfer
capacitance||-|24|-|pF|
|Qg|Totalgate charge|VDD= 50 V, ID= 32 A,
VGS= 10 V
(see_Figure 14: "Test circuit for gate_
_charge behavior"_)|-|19|-|nC|
|Qgs|Gate-source charge||-|9|-|nC|
|Qgd|Gate-drain charge||-|4.5|-|nC|
**Table 6: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 50 V, ID= 16 A,
RG= 4.7 Ω, VGS= 10 V
(see_Figure 13: "Test circuit for_
_resistive load switching times"_)|-|12|-|ns|
|tr|Rise time||-|17.5|-|ns|
|td(off)|Turn-off delaytime||-|22|-|ns|
|tf|Fall time||-|5.6|-|ns|
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**Electrical characteristics**
## **Table 7: Source-drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD_(1)_|Forward on voltage|ISD= 24 A, VGS= 0|-||1.1|V|
|Irr|Reverse recoverytime|ISD= 24 A, di/dt = 100 A/µs
VDD= 80 V, TJ= 150 °C, (see_Figure_
_15: "Test circuit for inductive load_
_switching and diode recovery_
_times"_)|-|41||ns|
|Qrr|Reverse recovery
charge||-|47||nC|
|IRRM|Reverse recovery
current||-|2.3||A|
## **Notes:**
(1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area**
**==> picture [19 x 17] intentionally omitted <==**
**----- Start of picture text -----**
µ
100 s
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**==> picture [128 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Figure 3: Thermal impedance
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**==> picture [96 x 87] intentionally omitted <==**
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d
| 05
0.2
_Y 0.1
po 0.05
4
Wh 0.010.02
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**Figure 4: Output characteristics**
**Figure 5: Transfer characteristics**
**Figure 6: Gate charge vs gate-source voltage**
**Figure 7: Static drain-source on-resistance**
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**Electrical characteristics**
**Figure 8: Capacitance variations**
**Figure 9: Normalized gate threshold voltage vs temperature**
**Figure 10: Normalized on-resistance vs temperature**
**Figure 11: Normalized V(BR)DSS vs temperature**
**==> picture [6 x 6] intentionally omitted <==**
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µ
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**Figure 12: Source-drain diode forward characteristics**
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 578] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13: Test circuit for resistive load Figure 14: Test circuit for gate charge
switching times behavior
Figure 15: Test circuit for inductive load
Figure 16: Unclamped inductive load test
switching and diode recovery times circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
**----- End of picture text -----**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package information 4.1 TO-220FP type A package information**
**Figure 19: TO-220FP package outline**
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**Package information**
**Table 8: TO-220FP package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
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**Revision history**
## **5 Revision history**
**Table 9: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Sep-2016|1|First release.|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STF30N10F7/power-mosfet-n-channel-100-v-24-a-002-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf30n10f7/mosfet-n-ch-100v-24a-175deg-c/dp/3367038)
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