# Power MOSFET, N Channel, 600 V, 1 A, 4.4 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:1752087/)

**URL**: https://novapart.co/products/STF2HNK60Z/power-mosfet-n-channel-600-v-1-a-44-ohm-to-220fp
**SKU**: STF2HNK60Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4490
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 20W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 20W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 4.4ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1A |
| Drain Source On State Resistance | 4.4ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752087/)

## **STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-AP** 

N-channel 600 V, 4.4 Ω, 2 A Zener-protected SuperMESH™ Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packages 

## **Datasheet — production data** 

## **Features** 

|**Order codes**|**VDSS**|**RDS(on)**<br>**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD2HNK60Z|600 V|< 4.8Ω|2 A|45 W|
|STD2HNK60Z-1|600 V|< 4.8Ω|2 A|45 W|
|STF2HNK60Z|600 V|< 4.8Ω|2 A|20 W|
|STQ2HNK60ZR-AP|600 V|< 4.8Ω|0.5 A|3 W|



- Gate charge minimized 

- 100% avalanche tested 

- Extremely high dv/dt capability 

**==> picture [171 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3 3<br>2 1<br>1<br>DPAK<br>IPAK<br>3<br>2<br>1<br>TO-92 (Ammopak) TO-220<br>**----- End of picture text -----**<br>


- ESD improved capability 

- New high voltage benchmark 

## **Figure 1. Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD2HNK60Z|D2HNK60Z|DPAK|Tape and reel|
|STD2HNK60Z-1|D2HNK60Z|IPAK|Tube|
|STF2HNK60Z|F2HNK60Z|TO-220FP|Tube|
|STQ2HNK60ZR-AP|Q2HNK60ZR|TO-92|Ammopak|



_www.st.com_ 

1/22 

May 2012 

Doc ID 10067 Rev 5 

This is information on a product in full production. 

**Contents** 

**STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**IPAK,DPAK**|**TO-220FP**|**TO-92**||
|VDS|Drain-source voltage|600|||V|
|VGS|Gate-source voltage|±30|||V|
|ID|Drain current (continuous) at TC= 25 °C|2.0|2.0|0.5|A|
|ID|Drain current (continuous) at TC=100 °C|1.26|1.26|0.32|A|
|IDM<br>(1)|Drain current (pulsed)|8|8|2|A|
|PTOT|Total dissipation at TC= 25 °C|45|20|3|W|
||Derating factor|0.36|0.16|0.025|W/°C|
|VESD(G-S)|Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)|2000|||V|
|VISO|Insulation withstand voltage (DC)||2500||V|
|dv/dt(2)|Peak diode recovery voltage slope|4.5|||V/ns|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|- 55 to 150|||°C|
|Tl|Maximum lead temperature for soldering<br>purpose|300||260|°C|



1. Pulse width limited by safe operating area. 

2. ISD  ≤  2 A, di/dt ≤  200 A/µs, VDD =80%V(BR)DSS. 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**IPAK/DPAK**|**TO-220FP**|**TO-92**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|2.77|6.25||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|100|62.5|120|°C/W|
|Rthj-lead|Thermal resistance junction-lead max|||40|°C/W|



## **Table 4. Avalanche data** 

|**Table 4.**|**Avalanche data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not repetitive<br>(pulse width limited by Tjmax)|2|A|
|EAS|Single pulse avalanche energy<br>(starting Tj = 25 °C, ID=IAR, VDD= 50 mV)|120|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS=600 V,<br>VDS= 600 V,Tc=125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 1 A||4.4|4.8|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15 V, ID= 1 A|-|1.5||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f=1 MHz, VGS=0|-|280<br>38<br>7||pF<br>pF<br>pF|
|Coss eq<br>(2)|Equivalent output<br>capacitance|VGS=0, VDS=0 to 480 V|-|30||pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=480 V, ID= 2 A<br>VGS=10 V<br>_(see Figure 19)_|-|11<br>2.25<br>6|15|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=300 V, ID=1 A,<br>RG=4.7Ω,  VGS=10 V<br>_(see Figure 18)_|-|10<br>30|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time||-|23<br>50|-|ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current<br>(pulsed)||-||2<br>8|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 2 A, VGS= 0|-||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=2 A, di/dt = 100 A/µs,<br>VDD=20 V|-|178<br>445<br>5||ns<br>nC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=2 A, di/dt = 100 A/µs,<br>VDD=20 V, Tj=150 °C|-|200<br>500<br>5||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area for TO-92** 

## **Figure 3. Thermal impedance for TO-92** 

**==> picture [155 x 155] intentionally omitted <==**

**==> picture [215 x 151] intentionally omitted <==**

**Figure 4. Safe operating area for TO-220FP** 

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [155 x 155] intentionally omitted <==**

**==> picture [157 x 152] intentionally omitted <==**

**Figure 6. Safe operating area for IPAK/DPAK** 

**Figure 7. Thermal impedance for IPAK/DPAK** 

**==> picture [155 x 156] intentionally omitted <==**

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**STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP** 

**Electrical characteristics** 

## **Figure 8. Output characteristics** 

**==> picture [157 x 153] intentionally omitted <==**

**Figure 10. Normalized BVDSS vs temperature** 

**==> picture [171 x 153] intentionally omitted <==**

**Figure 12. Gate charge vs gate-source voltage** 

**==> picture [168 x 156] intentionally omitted <==**

## **Figure 9. Transfer characteristics** 

**==> picture [157 x 155] intentionally omitted <==**

**Figure 11. Static drain-source on-resistance** 

**==> picture [168 x 153] intentionally omitted <==**

**Figure 13. Capacitance variations** 

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**STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP** 

**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature** 

**==> picture [168 x 153] intentionally omitted <==**

**==> picture [168 x 155] intentionally omitted <==**

**Figure 16. Source-drain diode forward characteristics** 

**==> picture [157 x 155] intentionally omitted <==**

**Figure 17. Maximum avalanche energy vs temperature** 

**==> picture [168 x 153] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load** 

**==> picture [462 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 20. Test circuit for inductive load  Figure 21. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Table 9. IPAK (TO-251) mechanical data** 

|**Table 9.**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ**|**max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.3||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10o||



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**Package mechanical data** 

**Figure 24. IPAK (TO-251) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_H AM09214V1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1||1.50|
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 25. DPAK (TO-252) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_I<br>**----- End of picture text -----**<br>


## **Figure 26. DPAK footprint[(a)]** 

**==> picture [405 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters 

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**Package mechanical data** 

**Table 11. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

## **Figure 27. TO-220FP drawing** 

**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 12. TO-92 ammopack mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A1|||4.80|
|T|||3.80|
|T1|||1.60|
|T2|||2.30|
|d|||0.48|
|P0|12.50|12.70|12.90|
|P2|5.65|6.35|7.05|
|F1, F2|2.44|2.54|2.94|
|F3|4.98|5.08|5.48|
|delta H|-2.00||2.00|
|W|17.50|18.00|19.00|
|W0|5.70|6.00|6.30|
|W1|8.50|9.00|9.25|
|W2|||0.50|
|H|18.50||20.50|
|H3|0.5|1|1.5|
|H0|15.50|16.00|16.50|
|H1|||25.00|
|D0|3.80|4.00|4.20|
|t|||0.90|
|L|||11.00|
|l1|3.00|||
|delta P|-1.00||1.00|



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**Package mechanical data** 

**==> picture [405 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. TO-92 ammopack mechanical data drawing<br>0050910S_REVS<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 13. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP** 

**Packaging mechanical data** 

## **Figure 29. Tape for DPAK (TO-252)** 

**==> picture [390 x 297] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>o i e ; —4 |<br>| / O0O0 G8G 0CO0 8 G00 E<br>F<br>K0 W<br>B1 B0<br>on e |||| e |] ®]]<br>ena olo l o i a i c te<br>| Tl LT<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 —_—><br>User direction of feed<br>R<br>S e ca l e alice<br>a Bending radius<br>ad<br>User direction of feed<br>**----- End of picture text -----**<br>


**==> picture [39 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 30. Reel for DPAK (TO-252)** 

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**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

## **Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Mar-2004|1|First release|
|23-Mar-2004|2|Modified title|
|02-Apr-2005|3|Added new section:_Electrical characteristics (curves)_|
|06-Mar-2006|4|Inserted DPAK. The document has been reformatted|
|25-May-2012|5|Corrected unit in_Table 5: On/off states_|



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Doc ID 10067 Rev 5 

**STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP** 

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Doc ID 10067 Rev 5 



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