# Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3367037/)

**URL**: https://novapart.co/products/STF27N60M2-EP/power-mosfet-n-channel-600-v-20-a-015-ohm-to-220fp
**SKU**: STF27N60M2-EP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 30W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367037/)

## **STF27N60M2-EP** 

N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFET in TO-220FP package Datasheet - production data 

## **Features** 

**Order code V  DS RDS(on) max ID** STF27N60M2-EP 600 V 0.163 Ω 20 A ~~a~~ 

- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- Very low turn-off switching losses  100% avalanche tested 

- Zener-protected 

**==> picture [42 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

- Tailored for very high frequency converters (f > 150 kHz) 

D(2) (f > 150 kHz) **Description** These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced G(1) performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. S(3) AM15572v1_no_tab **Table 1: Device summary Order code Marking Package Packing** STF27N60M2-EP 27N60M2EP TO-220FP Tube ~~ee~~ 

January 2016 DocID028863 Rev 1 

1/13 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STF27N60M2-EP**|**Contents**<br>**STF27N60M2-EP**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................... 3**|
|**2**|**Electrical characteristics ................................................................. 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ...................................................................................... 8**|
|**4**|**Package information ........................................................................ 9**|
||4.1<br>TO-220FP package information ...................................................... 10|
|**5**|**Revision history .............................................................................. 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID<br>_(1)_|Drain current (continuous) at TC= 25 °C|20|A|
|ID<br>_(1)_|Drain current (continuous) at TC= 100 °C|13|A|
|IDM<br>_(2)_|Drain current (pulsed)|80|A|
|PTOT|Total dissipation at TC= 25 °C|30|W|
|dv/dt_(3)_|Peak diode recoveryvoltage slope|15|V/ns|
|dv/dt_(4)_|MOSFET dv/dt ruggedness|50|V/ns|
|VISO|Insulation withstand voltage (RMS) from all three leads to external<br>heat sink (t = 1 s; Tc= 25 °C)|2.5|kV|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Operating junction temperature|||



## **Notes:** 

- (1) Limited by maximum junction temperature 

- (2) Pulse width limited by safe operating area. 

(3) ISD ≤ 20 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. 

(4) VDS ≤ 480 V 

## **Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|4.2|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|°C/W|



## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetetive or not repetetive<br>(pulse width limited by Tjmax)|3.6|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR; VDD= 50 V)|260|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 5: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 10 A||0.150|0.163|Ω|



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|1320|-|pF|
|Coss|Output<br>capacitance||-|70|-|pF|
|Crss|Reverse transfer<br>capacitance||-|1|-|pF|
|Coss eq.<br>_(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|146|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0 A|-|4|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 20 A, VGS= 10 V<br>(see_Figure 15: "Test circuit for gate_<br>_charge behavior"_)|-|33|-|nC|
|Qgs|Gate-source<br>charge||-|5.2|-|nC|
|Qgd|Gate-drain charge||-|16|-|nC|



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on<br>delay time|VDD= 300 V, ID= 10 A, RG= 4.7 Ω,<br>VGS= 10 V (see_Figure 14: "Test circuit for_<br>_resistive load switching times"_and_Figure 19:_<br>_"Switching time waveform"_)|-|13.4|-|ns|
|tr|Rise time||-|8.1|-|ns|
|td(off)|Turn-off-<br>delay time||-|55.6|-|ns|
|tf|Fall time||-|6.3|-|ns|



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**Electrical characteristics** 

|||**Table 8: Source-drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain<br>current||-||20|A|
|ISDM<br>_(1)_|Source-drain<br>current (pulsed)||-||80|A|
|VSD<br>_(2)_|Forward on<br>voltage|VGS= 0 V, ISD= 20 A|-||1.6|V|
|trr|Reverse<br>recovery time|ISD= 20 A, di/dt = 100 A/µs, VDD= 60 V<br>(see_Figure 19: "Switching time_<br>_waveform"_)|-|271||ns|
|Qrr|Reverse<br>recovery charge||-|3.44||µC|
|IRRM|Reverse<br>recoverycurrent||-|25.4||A|
|trr|Reverse<br>recovery time|ISD= 20 A, di/dt = 100 A/µs, VDD= 60 V,<br>Tj= 150 °C (see_Figure 19: "Switching_<br>_time waveform"_)|-|352||ns|
|Qrr|Reverse<br>recovery charge||-|4.82||µC|
|IRRM|Reverse<br>recovery current||-|27.4||A|



## **Notes:** 

(1) Pulse width is limited by safe operating area 

(2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [389 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area   Figure 3: Thermal impedance<br>ID GIPG140120161308RV<br>(A)<br>10<br>tp = 10 µs<br>tp = 100µs<br>1 tp = 1ms<br>Single pulse,Tc =25°C<br>Tj≤150°C,VGS=10 V tp = 10 ms<br>0.1<br>0.1 1 10 100 VDS[V]<br>Operation in this area is<br>Limited by RDS(on)<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics** 

**==> picture [156 x 142] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [157 x 143] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance** 

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**Electrical characteristics** 

**Figure 8: Capacitance variations** 

**==> picture [159 x 144] intentionally omitted <==**

**Figure 9: Output capacitance stored energy** 

**==> picture [163 x 143] intentionally omitted <==**

**Figure 10: Normalized V(BR)DSS vs Figure 11: Normalized gate threshold voltage temperature vs temperature** 

**==> picture [169 x 142] intentionally omitted <==**

**==> picture [164 x 143] intentionally omitted <==**

**==> picture [398 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12: Normalized on-resistance vs  Figure 13: Source-drain diode forward<br>temperature  characteristics<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 587] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Test circuit for resistive load  Figure 15: Test circuit for gate charge<br>switching times  behavior<br>Figure 16: Test circuit for inductive load  Figure 17: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 19: Switching time waveform<br>Figure 18: Unclamped inductive waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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## **Package information** 

## **4.1 TO-220FP package information** 

**==> picture [162 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20: TO-220FP package outline<br>**----- End of picture text -----**<br>


~~>~~ 10/13 DocID028863 Rev 1 ~~7 2~~ 

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**Package information** 

## **Table 9: TO-220FP package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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## **Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|14-Jan-2016|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stf27n60m2-ep/mosfet-n-ch-600v-20a-150deg-c/dp/3367037)
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