# Power MOSFET, N Channel, 40 V, 90 A, 1950 µohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2729692/)

**URL**: https://novapart.co/products/STF260N4F7/power-mosfet-n-channel-40-v-90-a-1950-ohm-to-220fp
**SKU**: STF260N4F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5860
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00195ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 35W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 1950µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2729692/)

## **STF260N4F7** 

N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - preliminary data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STF260N4F7|40 V|2.5 mΩ|35 W|



- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

**==> picture [42 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF260N4F7|260N4F7|TO-220FP|Tube|



1/11 

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

October 2015 

DocID028478 Rev 1 

|**Contents**<br>**STF260N4F7**|**Contents**<br>**STF260N4F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................... 3**|
|**2**|**Electrical characteristics ................................................................. 4**|
|**3**|**Test circuits ...................................................................................... 6**|
|**4**|**Package information ........................................................................ 7**|
||4.1<br>TO-220FP package information ........................................................ 8|
|**5**|**Revision history .............................................................................. 10**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|40|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at TC= 25 °C|90|A|
|ID|Drain current (continuous) at TC= 100 °C|64|A|
|IDM<br>_(1)_|Drain current (pulsed)|360|A|
|PTOT|Total dissipation at TC= 25 °C|35|W|
|Viso|Insulation withstand voltage (RMS) from all three leads to external<br>heat sink (t = 1s; TC= 25 °C)|2.5|kV|
|Tstg|Storage temperature|-55 to 175|°C|
|TJ|Operationjunction temperature|||



## **Notes:** 

(1) Pulse width limited by safe operating area 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|4.29|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|°C/W|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Uni**<br>**t**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|40|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V, VDS= 40 V|||1|µA|
|||VGS= 0 V, VDS=  40 V<br>TC= 125  °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= + 20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2||4|V|
|RDS(on)|Static drain-source on- resistance|VGS= 10 V, ID= 60 A||1.95|2.5|mΩ|



## **Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0 V, VDS= 25 V, f = 1 MHz|-|5640|-|pF|
|Coss|Output capacitance||-|2370|-|pF|
|Crss|Reverse transfer<br>capacitance||-|34|-|pF|
|Qg|Totalgate charge|VDD= 20 V, ID= 120 A,<br>VGS= 10 V<br>(see_Figure 3: "Test circuit for gate_<br>_charge behavior"_)|-|67|-|nC|
|Qgs|Gate-source charge||-|31|-|nC|
|Qgd|Gate-drain charge||-|10|-|nC|



## **Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on<br>delay time|VDD= 20 V, ID= 60 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 2: "Test circuit for resistive load_<br>_switching times"_and_Figure 7: "Switching_<br>_time waveform"_|-|30|-|ns|
|tr|Rise time||-|21|-|ns|
|td(off)|Turn-off<br>delay time||-|42|-|ns|
|tf|Fall time||-|13|-|ns|



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**Electrical characteristics** 

|||**Table 7: Source drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VSD<br>_(1)_|Forward on<br>voltage|VGS= 0 V, ISD= 120 A|-|-|1.1|V|
|trr|Reverse<br>recovery time|ISD= 120 A, di/dt = 100 A/µs<br>VDD= 32 V (see_Figure 4: "Test circuit for_<br>_inductive load switching and diode_<br>_recovery times"_)|-|68||ns|
|Qrr|Reverse<br>recovery<br>charge||-|98||nC|
|IRRM|Reverse<br>recovery<br>current||-|3||A|



## **Notes:** 

(1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Test circuit for resistive load<br>Figure 3: Test circuit for gate charge behavior<br>switching times<br>Figure 4: Test circuit for inductive load<br>Figure 5: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>**----- End of picture text -----**<br>


**Figure 7: Switching time waveform Figure 6: Unclamped inductive waveform** 

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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## **Package information** 

## **4.1 TO-220FP package information** 

**Figure 8: TO-220FP package outline** 

~~>~~ 8/11 DocID028478 Rev 1 ~~7 2~~ 

**STF260N4F7** 

**Package information** 

**Table 8: TO-220FP package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|13-Oct-2015|1|Initial release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STF260N4F7/power-mosfet-n-channel-40-v-90-a-1950-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf260n4f7/power-mosfet-n-channel-90a-to/dp/2729692)
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