# Power MOSFET, N Channel, 600 V, 18 A, 0.168 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3129893/)

**URL**: https://novapart.co/products/STF24N60M2/power-mosfet-n-channel-600-v-18-a-0168-ohm-to
**SKU**: STF24N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1800
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Qualification | - |
| Power Dissipation | 30W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.168ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129893/)

## **STF24N60M2, STFI24N60M2, STFW24N60M2** N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Q g Power MOSFETs in TO-220FP, I[2] PAKFP and TO-3PF packages 

− **Datasheet production data** 

## **Features** 

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**----- Start of picture text -----**<br>
Order codes VDS @ TJmax RDS(on) max ID<br>STF24N60M2<br>3<br>1 [2] 1 2 3 STFI24N60M2 650 V 0.19 Ω 18 A<br>TO-220FP STFW24N60M2<br>I [2] PAKFP<br>(TO-281) • Extremely low gate charge<br>> | Ett<br>• Lower RDS(on) x area vs previous generation<br>• Low gate input resistance<br>1<br>• 100% avalanche tested<br>2 3 • Zener-protected<br>1<br>TO-3PF<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Figure 1. Internal schematic diagram** 

- LLC converters, resonant converters 

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D(2)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


## **Description** 

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. 

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AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF24N60M2|24N60M2|TO-220FP|Tube|
|STFI24N60M2||I2PAKFP (TO-281)||
|STFW24N60M2||TO-3PF||



April 2014 

DocID024026 Rev 6 

1/18 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**||**STF24N60M2, STFI24N60M2, STFW24N60M2**|
|---|---|---|
|**Contents**|||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**||
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**||
||2.1|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**||
||4.1|TO-220FP, STF24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
||4.2|I2PAKFP, STFI24N60M2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3|TO-3PF, STFW24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**||



2/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical ratings** 

**==> picture [460 x 315] intentionally omitted <==**

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1  Electrical ratings<br>Table 2. Absolute maximum ratings<br>Value<br>Symbol Parameter Unit<br>TO-220FP,<br>TO-3PF<br>I [2] PAKFP<br>VGS Gate-source voltage ± 25 V<br>ID Drain current (continuous) at TC = 25 °C 18  [(1)] A<br>ID Drain current (continuous) at TC = 100 °C 12 [ (1)] A<br>IDM (2) Drain current (pulsed) 72  [(1)] A<br>PTOT Total dissipation at TC = 25 °C 30 48 W<br>dv/dt  [(3)] Peak diode recovery voltage slope 15 V/ns<br>dv/dt [(4)] MOSFET dv/dt ruggedness 50 V/ns<br>Insulation withstand voltage (RMS) from all three leads to<br>VISO 2500 3500 V<br>external heat sink (t = 1 s; TC = 25 °C)<br>Tstg Storage temperature<br>- 55 to 150 °C<br>=a Tj Max. operating junction temperature<br>1. Limited by maximum junction temperature.<br>2. Pulse width limited by safe operating area.<br>**----- End of picture text -----**<br>


3. ISD ≤ 18 A, di/dt  ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. 

4. VDS ≤ 480 V 

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Table 3. Thermal data<br>Value<br>Symbol Parameter Unit<br>TO-220FP,<br>TO-3PF<br>I [2] PAKFP<br>Rthj-case Thermal resistance junction-case max 4.2 2.6 °C/W<br>Se Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W<br>Table 4. Avalanche characteristics<br>Symbol Parameter Value Unit<br>Avalanche current, repetitive or not repetitive (pulse width<br>IAR limited by Tjmax) 3.5 A<br>EAS Single pulse avalanche energy (starting TVDD=50) j=25°C, ID= IAR;  180 mJ<br>——oo<br>**----- End of picture text -----**<br>


DocID024026 Rev 6 

3/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>VGS= 0, ID= 1 mA<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current<br>VGS= 0, VDS= 600 V<br>1<br>μA<br>VGS= 0,<br>VDS= 600 V, TC=125 °C<br>100<br>μA<br>IGSS<br>Gate-body leakage<br>current<br>VDS= 0, VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source on-<br>resistance<br>VGS= 10 V, ID= 9 A<br>0.168<br>0.19<br>Ω<br>**Table 6. Dynamic**<br>**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>~~a~~<br>~~esa ee~~<br>~~PT~~<br>~~es~~<br>~~a~~<br>~~esee~~|
|---|
|Ciss<br>Input capacitance<br>VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>-<br>1060<br>-<br>pF<br>Coss<br>Output capacitance<br>-<br>55<br>-<br>pF<br>Crss<br>Reverse transfer<br>capacitance<br>-<br>2.2<br>-<br>pF<br>Coss eq.<br>(1)<br>Equivalent output<br>capacitance<br>VDS= 0 to 480 V, VGS= 0<br>-<br>258<br>-<br>pF<br>~~a~~<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~ee~~<br>~~-—[~~<br>~~PT~~<br>~~a~~|
|1.<br>Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Cosswhen VDS<br>increases from 0 to 80% VDSS<br>RG<br>Intrinsic gate<br>resistance<br>f = 1 MHz, ID=0<br>-<br>7<br>-<br>Ω<br>Qg<br>Total gate charge<br>VDD= 480 V, ID= 18 A,<br>VGS= 10 V<br>(see_Figure 16_)<br>-<br>29<br>-<br>nC<br>Qgs<br>Gate-source charge<br>-<br>6<br>-<br>nC<br>Qgd<br>Gate-drain charge<br>-<br>12<br>-<br>nC<br>~~a~~<br>~~en~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~ ft<br>~~a~~<br>~~|~~<br>~~|~~<br>~~tf~~|



4/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical characteristics** 

||**Table 7. Switchin**|**Table 7. Switching times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 9 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_and_21_)|-|14|-|ns|
|tr|Rise time||-|9|-|ns|
|td(off)|Turn-off delay time||-|60|-|ns|
|tf|Fall time||-|15|-|ns|



**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>(1)<br>~~a~~|Source-drain current<br>||-<br>||18<br>|A<br>|
|ISDM (1),(2)<br>~~Oe~~|Source-drain current (pulsed)<br>~~Oe~~|~~Oe~~|-<br>~~Oe~~|~~Oe~~|72<br>~~Oe~~|A<br>~~Oe~~|
|VSD (3)<br>~~Re~~<br>~~ee~~<br>~~a~~|Forward on voltage<br>~~Re~~<br>~~ee~~|ISD= 18 A, VGS= 0<br>~~Re~~<br>~~ee~~|-<br>~~Re~~<br>~~_|~~|~~Re~~<br>~~_|~~<br>~~|~~|1.6<br>~~Re~~<br>~~_|~~<br>~~||~~|V<br>~~Re~~<br>~~_|~~<br>~~|~~|
|trr<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse recovery time<br>~~ee~~<br>~~eee~~|ISD= 18 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 18_)<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>~~eee~~|-<br>~~_|~~<br>~~|~~|332<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~_|~~<br>~~||~~<br>~~|~~<br>~~||~~|ns<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|Qrr<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~eee~~<br>~~eee~~||-<br>~~_|~~<br>~~|~~<br>~~|~~|4<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|~~_|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~**|**|~~|μC<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|IRRM<br>~~a~~<br>~~es~~<br>~~a~~|Reverse recovery current<br>~~eee~~<br>~~eee~~<br>~~eee~~||-<br>~~|~~<br>~~|~~<br>~~_~~|24<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~_~~~~**|**~~|~~|~~<br>~~| |~~<br>~~|~~<br>~~**|**|~~<br>~~**|**|~~|A<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|trr<br>~~es~~<br>~~a~~<br>~~es~~|Reverse recovery time<br>~~eee~~<br>~~eee~~|ISD= 18 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)<br>~~eee~~<br>~~eee~~<br>~~eee~~|-<br>~~|~~<br>~~_~~|450<br>~~|~~<br>~~**|**~~<br>~~_~~~~**|**~~<br>~~**|**~~|~~|~~<br>~~**|**|~~<br>~~**|**|~~<br>~~**||**~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|
|Qrr<br>~~es~~<br>~~a~~<br>~~es~~|Reverse recovery charge<br>~~eee~~<br>~~eee~~||-<br>~~_~~<br>~~_~~<br>~~|~~|5.5<br>~~**|**~~<br>~~_~~~~**|**~~<br>~~_~~<br>~~**|**~~<br>~~|~~|~~**|** |~~<br>~~**|** |~~<br>~~**||**~~<br>~~|~~|μC<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|
|IRRM<br>~~es~~|Reverse recovery current<br>~~eee~~||-<br>~~|~~|25<br>~~**|**~~<br>~~|~~|~~**||**~~<br>~~|~~|A<br>~~**|**~~<br>~~|~~|



2. Pulse width limited by safe operating area 

3. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

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**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220FP and Figure 3. Thermal impedance for TO-220FP and I[2] PAKFP I[2] PAKFP** 

**==> picture [460 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15462v1<br>(A)<br>\. . \\ \,<br>. \, \y \,<br>10 \, \, \, \.<br>SAIN 10µs j<br>\. NY NG ‘<br>\, \, 100µs 7,<br>1 NOON\Y 1ms WZ,<br>\<br>10ms<br>Tj=150°C<br>0.1 Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF<br>GIPG030420141648SA GIPG030420141703SA<br>ID K<br>(A) δ=0.5<br>0.2<br>100<br>== wre 0.1<br>SIN ONS SN 10 [-1]<br>NON ONS 10µs<br>10 a Sseeiir NH 0.05<br>100µs<br>0.02<br>1 NON,N. 1ms ail 0.01 Zt h = k Rins- c<br>Tj=150°C XN“ 10ms 10 [-2] b= tp/t<br>Tc=25°C Single pulse<br>0.1<br>Single<br>pulse<br>ee] T<br>0.01 10 [-3]<br>0.1 1 10 100 VDS(V) 10-5 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] tp(s)<br>Figure 6. Output characteristics Figure 7. Transfer characteristics<br>AM15470v1 AM15469v1<br>ID ID<br>(A) VGS= 8, 9, 10 V (A)<br>VGS= 7 V VDS= 17 V<br>40 40<br>35 35<br>30 30<br>25 VGS= 6 V 25<br>20 20<br>15 15<br>10 V GS = 5 V 10<br>5 5<br>VGS= 4 V<br>0 0<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)<br>Vara<br>6/18 DocID024026 Rev 6 ky<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

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AM15471v1<br>VGS VDS<br>(V)<br>VDD=480 V (V)<br>12 VDS 600<br>ID=18 A<br>10 500<br>8 400<br>6 300<br>4 200<br>2 100<br>0 0<br>0 5 10 15 20 25 30 Qg(nC)<br>**----- End of picture text -----**<br>


**Figure 10. Capacitance variations** 

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**----- Start of picture text -----**<br>
C AM15665v1<br>(pF) eee<br>EHH Pr ee eee eee<br>1000 OESHMI CC Ciss<br>Ct TNT<br>100<br>Coss<br>10 A A<br>FEESNE<br>| Crss<br>1 aaN<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized gate threshold voltage vs temperature** 

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**----- Start of picture text -----**<br>
VGS(th) AM15473v1<br>(norm)<br>ID = 250 µA<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 9. Static drain-source on-resistance** 

**==> picture [202 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15465v1<br>(Ω)<br>VGS=10V<br>0.176<br>0.172<br>0.168<br>0.164<br>0.160<br>0 4 8 12 16 ID(A)<br>**----- End of picture text -----**<br>


**Figure 11. Output capacitance stored energy** 

**==> picture [193 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM15472v1<br>(µJ)<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [201 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15464v1<br>(norm)<br>2.3 ID = 9 A<br>2.1 VGS = 10 V<br>1.9<br>1.7<br>1.5<br>1.3<br>1.1<br>0.9<br>0.7<br>0.5<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


DocID024026 Rev 6 

7/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**Figure 15. Normalized V(BR)DSS vs temperature** 

**==> picture [423 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15468v1 V(BR)DSS AM15466v1<br>(V) (norm)<br>1.11<br>1.4<br>1.09 ID = 1mA<br>1.2 T J =-50°C<br>1.07<br>1 1.05<br>0.8 1.03<br>1.01<br>0.6<br>TJ=150°C<br>TJ=25°C 0.99<br>0.4<br>0.97<br>0.2 0.95<br>0 0.93<br>0 2 4 6 8 10 12 14 16 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


8/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for resistive load** 

**Figure 17. Gate charge test circuit** 

**==> picture [452 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>JL RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>ton toff<br>tdon tr tdoff tf<br>90% 90%<br>10%<br>0 10% VDS<br>90%<br>VGS<br>0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID024026 Rev 6 

9/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

## **4.1 TO-220FP, STF24N60M2** 

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**----- Start of picture text -----**<br>
Figure 22. TO-220FP drawing<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


DocID024026 Rev 6 

11/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

**Table 9. TO-220FP mechanical data** 

||**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~co~~<br>~~esee~~|||
||**Min.**<br>~~co~~<br>~~es~~|**Typ.**<br>~~co~~<br>~~ee~~|**Max.**<br>~~co~~|
|A<br>~~a~~|4.4<br>~~es ~~|~~ee~~|4.6|
|B<br>~~a~~|2.5<br>||2.7<br>|
|D<br>~~aGe~~|2.5<br>~~Ge~~|~~Ge~~|2.75<br>~~Ge~~|
|E<br>~~Ge~~|0.45<br>~~Ge~~|~~Ge~~|0.7<br>~~Ge~~|
|F<br>~~a~~|0.75||1|
|F1<br>~~a~~|1.15||1.70|
|F2<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95<br>||5.2<br>|
|G1<br>~~Ge~~|2.4<br>~~Ge~~|~~Ge~~|2.7<br>~~Ge~~|
|H<br>~~Ge~~|10<br>~~Ge~~|~~Ge~~|10.4<br>~~Ge~~|
|L2<br>~~a~~||16||
|L3<br>~~a~~|28.6||30.6|
|L4<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9<br>||3.6<br>|
|L6<br>~~Ge~~|15.9<br>~~Ge~~|~~Ge~~|16.4<br>~~Ge~~|
|L7<br>~~Ge~~|9<br>~~Ge~~|~~Ge~~|9.3<br>~~Ge~~|
|Dia<br>~~a~~|3||3.2|



12/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

## **4.2 I[2] PAKFP, STFI24N60M2** 

## **Figure 23. I[2] PAKFP (TO-281) drawing** 

DocID024026 Rev 6 

13/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

**Table 10. I[2] PAKFP (TO-281) mechanical data** 

||**Table 10. I[2]PAKFP (TO-281) mechanical data(TO-281) mechanical dataTO-281) mechanical data) mechanical data mechanical data**|**Table 10. I[2]PAKFP (TO-281) mechanical data(TO-281) mechanical dataTO-281) mechanical data) mechanical data mechanical data**|**Table 10. I[2]PAKFP (TO-281) mechanical data(TO-281) mechanical dataTO-281) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~ee~~<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~<br>~~ee~~|**Typ.**<br>~~es~~<br>~~ee ee~~<br>P||**Max.**<br>~~es~~<br>~~ee~~<br>P||
|A<br>~~ee~~<br>~~a~~<br>~~a~~|4.40<br>~~ee~~|-<br>~~ee ee~~<br>P|<br>Pp<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>Pp<br>Pp<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>Pp<br>Pp<br>~~|~~|4.60<br>~~ee~~<br>P|<br>Pp|
|B<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~es~~|2.50<br>~~ee~~||2.70<br>~~ee~~<br>P|<br>Pp<br>~~Pp~~|
|D<br>~~a~~<br>~~es~~<br>~~ee~~|2.50||2.75<br>Pp<br>~~Pp~~<br>~~Pp~~|
|D1<br>~~es~~<br>~~ee~~<br>~~ee~~|0.65<br>~~ee~~||0.85<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|E<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.45<br>~~ee~~<br>~~ee~~<br>||0.70<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|F<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|0.75<br>~~ee~~<br>~~ee~~<br>~~ee~~||1.00<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>Pp|
|F1<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~ee~~||1.20<br>~~Pp~~<br>~~Pp~~<br>Pp<br>Pp|
|G<br>~~ee ~~<br>~~a~~<br>~~a~~<br>~~es~~|4.95<br>~~ee~~<br> ~~ee~~||5.20<br>~~Pp~~<br>Pp<br>Pp<br>~~Pp~~|
|H<br>~~a~~<br>~~es~~<br>~~ee~~|10.00||10.40<br>Pp<br>~~Pp~~<br>~~Pp~~|
|L1<br>~~es~~<br>~~ee~~<br>~~ee~~|21.00<br>~~ee~~||23.00<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|L2<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|13.20<br>~~ee~~<br>~~ee~~<br>||14.10<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|L3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|10.55<br>~~ee~~<br>~~ee~~<br>~~ee~~||10.85<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>Pp|
|L4<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|2.70<br>~~ee~~<br>~~ee~~<br>~~ee~~||3.20<br>~~Pp~~<br>~~Pp~~<br>Pp<br>Pp|
|L5<br>~~ee ~~<br>~~a~~<br>~~a~~|0.85<br>~~ee~~<br> ~~ee~~||1.25<br>~~Pp~~<br>Pp<br>Pp<br>~~|~~|
|L6<br>~~a~~|7.30||7.50<br>Pp<br>~~|~~|



14/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

## **4.3 TO-3PF, STFW24N60M2** 

**==> picture [127 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. TO-3PF drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
7627132_D<br>**----- End of picture text -----**<br>


DocID024026 Rev 6 

15/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Package mechanical data** 

**Table 11. TO-3PF mechanical data** 

||**Table 11. TO-3PF mechanical data**|**Table 11. TO-3PF mechanical data**|**Table 11. TO-3PF mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|5.30|~~ee ee~~|5.70<br>~~ee~~|
|C<br>~~a~~|2.80||3.20|
|D<br>~~a~~|3.10||3.50|
|D1<br>~~a~~|1.80<br>||2.20<br>|
|E<br>~~Ge~~|0.80<br>~~Ge~~|~~Ge~~|1.10<br>~~Ge~~|
|F<br>~~Ge~~|0.65<br>~~Ge~~|~~Ge~~|0.95<br>~~Ge~~|
|F2<br>~~a~~|1.80||2.20|
|G<br>~~a~~|10.30||11.50|
|G1<br>~~a~~||5.45||
|H<br>~~a~~|15.30<br>||15.70<br>|
|L<br>~~Ge~~|9.80<br>~~Ge~~|10<br>~~Ge~~|10.20<br>~~Ge~~|
|L2<br>~~Ge~~|22.80<br>~~Ge~~|~~Ge~~|23.20<br>~~Ge~~|
|L3<br>~~a~~|26.30||26.70|
|L4<br>~~a~~|43.20||44.40|
|L5<br>~~a~~|4.30||4.70|
|L6<br>~~a~~|24.30<br>||24.70<br>|
|L7<br>~~Ge~~|14.60<br>~~Ge~~|~~Ge~~|15<br>~~Ge~~|
|N<br>~~Ge~~|1.80<br>~~Ge~~|~~Ge~~|2.20<br>~~Ge~~|
|R<br>~~a~~|3.80||4.20|
|Dia<br>~~a~~|3.40||3.80|



16/18 

DocID024026 Rev 6 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

**Revision history** 

## **5 Revision history** 

**Table 12. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Dec-2012|1|First release.|
|20-Dec-2012|2|Added MOSFET dv/dt ruggedness in_Table 2: Absolute maximum_<br>_ratings_.|
|14-Jan-2013|3|Modified:_Figure 16_,_17_|
|28-May-2013|4|– Modified:_Figure 16_,_17_,_18_and_19_<br>– Minor text changes|
|28-Feb-2014|5|– Modified: Rthj-casevalue in_Table 3_<br>– Modified:_Figure 12_<br>– Minor text changes|
|07-Apr-2014|6|– Added: TO-3PF package<br>– Added:_Section 4.3: TO-3PF, STFW24N60M2_<br>– Minor text changes|



DocID024026 Rev 6 

17/18 

**STF24N60M2, STFI24N60M2, STFW24N60M2** 

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