# Power MOSFET, N Channel, 650 V, 18 A, 0.16 ohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/STF20N65M5/power-mosfet-n-channel-650-v-18-a-016-ohm-to-220fp
**SKU**: STF20N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0800
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M5 |
| Qualification | - |
| Power Dissipation | 30W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2807252/)
# **STF20N65M5, STFI20N65M5, STFW20N65M5**
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages
Datasheet - production data
**==> picture [209 x 142] intentionally omitted <==**
**----- Start of picture text -----**
e TO-220FP I [2] PAKFP (TO-281)
3
2
TO-3PF 1
**----- End of picture text -----**
**Figure 1: Internal schematic diagram**
|**Features**
**Order code**
**VDS@ TJmax**
**RDS(on)max**
**ID**
STF20N65M5
710 V
0.190 Ω
18 A
STFI20N65M5
STFW20N65M5
~~=m~~|**Features**
**Order code**
**VDS@ TJmax**
**RDS(on)max**
**ID**
STF20N65M5
710 V
0.190 Ω
18 A
STFI20N65M5
STFW20N65M5
~~=m~~|**Features**
**Order code**
**VDS@ TJmax**
**RDS(on)max**
**ID**
STF20N65M5
710 V
0.190 Ω
18 A
STFI20N65M5
STFW20N65M5
~~=m~~|**Features**
**Order code**
**VDS@ TJmax**
**RDS(on)max**
**ID**
STF20N65M5
710 V
0.190 Ω
18 A
STFI20N65M5
STFW20N65M5
~~=m~~|
|---|---|---|---|
||
Extremely low RDS(on)|||
||
Low gate charge and input capacitance|||
- Excellent switching performance
- 100% avalanche tested
## **Applications**
- Switching applications
**==> picture [60 x 115] intentionally omitted <==**
**----- Start of picture text -----**
D(2)
G(1)
S(3)
**----- End of picture text -----**
## **Description**
These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting products offer extremely low onresistance, making them particularly suitable for applications requiring high power and superior efficiency.
AM01475v1_noZen_no Tab
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF20N65M5|20N65M5|TO-220FP|Tube|
|STFI20N65M5||I²PAKFP (TO-281)||
|STFW20N65M5||TO-3FP||
March 2017
DocID024223 Rev 3
1/18
This is information on a product in full production.
_www.st.com_
|**Contents**
**STF20N65M5,STFI20N65M5,STFW20N65M5**|**Contents**
**STF20N65M5,STFI20N65M5,STFW20N65M5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curve) ........................................................ 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1
TO-220FP package information ...................................................... 11|
||4.2
I²PAKFP (TO-281) package information ......................................... 13|
||4.3
TO-3PF package information .......................................................... 15|
|**5**|**Revision history ............................................................................ 17**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220FP,**
**I²PAKFP**|**TO-3PF**||
|VGS|Gate- source voltage|±25||V|
|ID|Drain current (continuous) at TC= 25 °C|18_(1)_||A|
|ID|Drain current (continuous) at TC= 100 °C|11.3_(1)_||A|
|IDM_(2)_|Drain current (pulsed)|36_(1)_||A|
|PTOT|Total dissipation at TC= 25 °C|30|48|W|
|dv/dt_(3)_|Peak diode recovery voltage slope|15||V/ns|
|VISO_(4)_|Insulation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 s; TC= 25 °C)|2500|3500|V|
|Tstg|Storage temperature range|- 55 to 150||°C|
|Tj|Operating junction temperature range||||
## **Notes:**
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area
(3)ISD ≤ 18 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
(4)VDS ≤ 520 V
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**
**TO-220FP,**
**I²PAKFP**
**TO-3PF**|**Value**
**TO-220FP,**
**I²PAKFP**
**TO-3PF**|**Unit**|
|---|---|---|---|---|
|||**TO-220FP,**
**I²PAKFP**|||
|Rthj-case|Thermal resistance junction-case|4.17|2.6|°C/W|
|Rthj-amb|Thermal resistance junction-ambient|62.5|50|°C/W|
## **Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)|4|°C/W|
|EAS|Single pulse avalanche energy
(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|270|mJ|
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
**Table 5: On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage
drain current|VGS= 0, VDS= 650 V|||1|µA|
|||VGS= 0, VDS= 650 V,
TC=125 °C_(1)_|||100|µA|
|IGSS|Gate-body leakage
current|VDS= 0, VGS= ± 25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 9 A||0.160|0.190|Ω|
## **Notes:**
(1)Defined by design, not subject to production test
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0, VDS= 100 V,
f = 1 MHz|-|1434|-|pF|
|Coss|Output capacitance||-|38|-|pF|
|Crss|Reverse transfer
capacitance||-|3.7|-|pF|
|Co(tr)_(1)_|Equivalent capacitance
time related|VGS= 0, VDS= 0 to 520 V|-|118|-|pF|
|Co(er)_(2)_|Equivalent capacitance
energyrelated||-|35|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID=0 A|-|3.5|-|Ω|
|Qg|Totalgate charge|VDD= 520 V, ID= 9 A,
VGS= 0 to 10 V
(see_Figure 18: "Test circuit for_
_gate charge behavior"_)|-|36|-|nC|
|Qgs|Gate-source charge||-|7.5|-|nC|
|Qgd|Gate-drain charge||-|18|-|nC|
## **Notes:**
(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
**Electrical characteristics**
## **Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(V)|Voltage delaytime|VDD= 400 V, ID= 12 A,
RG= 4.7 Ω, VGS= 10 V
(see_Figure 19: "Test circuit for_
_inductive load switching and_
_diode recovery times"_and_Figure_
_22: "Switching time waveform"_)|-|43|-|ns|
|tr(V)|Voltage rise time||-|7.5|-|ns|
|tf(i)|Current fall time||-|7.5|-|ns|
|tc(off)|Crossing time||-|11.5|-|ns|
**Table 8: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||18|A|
|ISDM_(1)_|Source-drain current
(pulsed)||-||36|A|
|VSD_(2)_|Forward on voltage|ISD= 18 A, VGS= 0|-||1.5|V|
|trr|Reverse recoverytime|ISD= 18 A,
di/dt = 100 A/µs
VDD= 100 V
(see_Figure 19: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|288||ns|
|Qrr|Reverse recovery
charge||-|4||µC|
|IRRM|Reverse recovery
current||-|27||A|
|trr|Reverse recoverytime|ISD= 18 A,
di/dt = 100 A/µs
VDD= 100 V, Tj= 150 °C
(see_Figure 19: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|342||ns|
|Qrr|Reverse recovery
charge||-|4.7||µC|
|IRRM|Reverse recovery
current||-|28||A|
## **Notes:**
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
## **Electrical characteristics**
## **2.1 Electrical characteristics (curve)**
**==> picture [449 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Safe operating area for TO-220FP and Figure 3: Thermal impedance for for TO-220FP and
I²PAKFP I²PAKFP
**----- End of picture text -----**
**Figure 4: Safe operating area for TO-3PF**
**Figure 5: Thermal impedance for TO-3PF**
**==> picture [111 x 96] intentionally omitted <==**
**----- Start of picture text -----**
d
E05 Hi 7
myeGoL 0.02 f 0 .05 0.1 0.2
| HS | 0.01 Zt h =
**----- End of picture text -----**
**Figure 6: Output characteristics**
**Figure 7: Tranfer characteristics**
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**Electrical characteristics**
**Figure 8: Gate charge vs gate-source voltage**
**Figure 9: Static drain-source on-resistance**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
W
**----- End of picture text -----**
**Figure 10: Capacitance variations**
**Figure 12: Normalized gate threshold voltage vs temperature**
**Figure 11: Output capacitance stored energy**
**Figure 13: Normalized on-resistance vs temperature**
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**Electrical characteristics STF20N65M5,STFI20N65M5,STFW20N65M5**
**==> picture [418 x 18] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Source-drain diode forward Figure 15: Normalized V(BR)DSS vs temperature
characteristics
**----- End of picture text -----**
**Figure 16: Switching energy vs gate resistance**
Eon including reverse recovery of a SiC diode.
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**Test circuits**
## **3 Test circuits**
**==> picture [391 x 556] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18: Test circuit for gate charge
Figure 17: Test circuit for resistive load
behavior
switching times
OVpp
12V | 47 ka ‘| ka
100 nF
R 2200 =« | 33
Vo + uF HF Voo ve s! Lg Ig= 1G’CONSTO 100.9 D.UT.
Vespulse 4 [width] 4 R DUT. pulse width 220u0 Fa+ | 2 . 7kQCZ OVe
47 ka
= = —
TkO
AM01469v1
AM01468v1
Figure 19: Test circuit for inductive load Figure 20: Unclamped inductive load test
switching and diode recovery times circuit
Ds A dA E L
Sa+"Ss [f] [o] +B [ur] diodefastB B E 100 pH 3 . ‘ 3 1000 Vo; 7 : , 2200 33 ‘
250 & — fe} D D.U.T. u F +|HF Voo ;lp 3: +|HF uF >Vo
I) ns ° vimM ADU LT.
pulsewidth I
AM01470v1 AM01471v1
Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform
Verioss) a ee a a os
909%Vds i i 7 i 90%Id
Vp H elo off :
Vop ) Voo Vasil(t )) i> ! i i :
10%Vds : | : : 109%Id
Tcross -over AM05540v2_for_M5
**----- End of picture text -----**
DocID024223 Rev 3
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package information**
## **4.1 TO-220FP package information**
**Figure 23: TO-220FP package outline**
DocID024223 Rev 3 11/18 ~~co~~
**Package information STF20N65M5,STFI20N65M5,STFW20N65M5**
**Table 9: TO-220FP package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
**Package information**
## **4.2 I²PAKFP (TO-281) package information**
**Figure 24: I²PAKFP (TO-281) package outline**
**==> picture [406 x 444] intentionally omitted <==**
**----- Start of picture text -----**
8291506 Re v. C
**----- End of picture text -----**
DocID024223 Rev 3
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## **Package information STF20N65M5,STFI20N65M5,STFW20N65M5**
**Table 10: I²PAKFP (TO-281) mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|B|2.50||2.70|
|D|2.50||2.75|
|D1|0.65||0.85|
|E|0.45||0.70|
|F|0.75||1.00|
|F1|||1.20|
|G|4.95||5.20|
|H|10.00||10.40|
|L1|21.00||23.00|
|L2|13.20||14.10|
|L3|10.55||10.85|
|L4|2.70||3.20|
|L5|0.85||1.25|
|L6|7.50|7.60|7.70|
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**Package information**
## **4.3 TO-3PF package information**
**Figure 25: TO-3PF package outline**
**==> picture [407 x 376] intentionally omitted <==**
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**Package information STF20N65M5,STFI20N65M5,STFW20N65M5**
**Table 11: TO-3PF mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|5.30||5.70|
|C|2.80||3.20|
|D|3.10||3.50|
|D1|1.80||2.20|
|E|0.80||1.10|
|F|0.65||0.95|
|F2|1.80||2.20|
|G|10.30||11.50|
|G1||5.45||
|H|15.30||15.70|
|L|9.80|10|10.20|
|L2|22.80||23.20|
|L3|26.30||26.70|
|L4|43.20||44.40|
|L5|4.30||4.70|
|L6|24.30||24.70|
|L7|14.60||15|
|N|1.80||2.20|
|R|3.80||4.20|
|Dia|3.40||3.80|
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
**Revision history**
## **5 Revision history**
**Table 12: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Feb-2013|1|First release. Part numbers previously included in datasheet
DM00049308|
|21-Jul-2016|2|Added device in TO-3PF.
Modified:_Table 2: "Absolute maximum ratings", Table 5: "On /off_
_states"._
Modified:_Figure 2: "Safe operating area for TO-220FP_and_I²PAKFP",_
_Figure 4: "Safe operating area for TO-3PF", Figure 5: "Thermal_
_impedance for TO-3PF"._
Minor text changes|
|22-Mar-2017|3|Modified_Table 2: "Absolute maximum ratings"_,_Table 8: "Source drain_
_diode"_.
Modified_Figure 2: "Safe operating area for TO-220FP and I²PAKFP"_,
_Figure 4: "Safe operating area for TO-3PF"_,_Figure 12: "Normalized_
_gate threshold voltage vs temperature "_,_Figure 13: "Normalized on-_
_resistance vs temperature"_and_Figure 14: "Source-drain diode_
_forward characteristics "_.
Minor text changes.|
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**STF20N65M5,STFI20N65M5,STFW20N65M5**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STF20N65M5/power-mosfet-n-channel-650-v-18-a-016-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf20n65m5/mosfet-n-ch-650v-18a-to-220fp/dp/2807252)
---
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