# Power MOSFET, N Channel, 600 V, 13 A, 0.255 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2807250/)

**URL**: https://novapart.co/products/STF18N60M2/power-mosfet-n-channel-600-v-13-a-0255-ohm-to
**SKU**: STF18N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3400
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 25W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.255ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.255ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807250/)

## **STF18N60M2** 

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Q g Power MOSFET in a TO-220FP package 

− **Datasheet production data** 

## **Features** 

|**Order code**|**VDS@ TJmax**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STF18N60M2|650 V|0.28Ω|13 A|



- Extremely low gate charge 

**==> picture [57 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-220FP<br>**----- End of picture text -----**<br>


- Lower RDS(on) x area vs previous generation 

- Low gate input resistance 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

- LLC converters, resonant converters 

## **Description** 

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

**Order code Marking Package Packaging** STF18N60M2 18N60M2 TO-220FP Tube ~~Ss~~ 

This is information on a product in full production. 

_www.st.com_ 

February 2014 DocID024729 Rev 3 

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**Contents** 

**STF18N60M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



2/13 

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**STF18N60M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|13(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|8(1)|A|
|IDM<br>(2)|Drain current (pulsed)|52(1)|A|
|PTOT|Total dissipation at TC= 25 °C|25|W|
|dv/dt(3)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50|V/ns|
|VISO|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t = 1 s,TC= 25 °C)|2500|V|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area 

3. ISD ≤ 13 A, di/dt  ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 

4. VDS ≤ 480 V 

**Table 3. Thermal data Symbol Parameter Value Unit** Rthj-case Thermal resistance junction-case max 5 °C/W ~~<=~~ Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W **Table 4. Avalanche characteristics Symbol Parameter Value Unit** Avalanche current, repetetive or not IAR repetetive (pulse width limited by Tjmax ) 3 A Single pulse avalanche energy (starting ~~—e~~ EAS Tj=25°C, ID= IAR; VDD=50) 135 mJ 

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**STF18N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

|**Table 5. On /off states**|
|---|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>1<br>μA<br>VDS= 600 V, TC=125 °C<br>100<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>~~ee~~<br>~~ee ee~~<br>~~aee~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|
|RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 6.5 A<br>0.255<br>0.28<br>Ω<br>~~a~~|
|**Table 6. Dynamic**|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>Ciss<br>Input capacitance<br>VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>-<br>791<br>-<br>pF<br>Coss<br>Output capacitance<br>-<br>40<br>-<br>pF<br>Crss<br>Reverse transfer<br>capacitance<br>-<br>5.6<br>-<br>pF<br>Coss eq.<br>(1)<br>Equivalent output<br>capacitance<br>VDS= 0 to 480 V, VGS= 0<br>-<br>164.5<br>-<br>pF<br>RG<br>Intrinsic gate<br>resistance<br>f = 1 MHz, ID= 0<br>-<br>5.6<br>-<br>Ω<br>~~a~~<br>~~ee~~<br>~~—_————~~<br>~~a~~<br>~~SS~~<br>~~FREE~~<br>~~Pp~~<br>~~an~~<br>~~as~~<br>~~esee~~<br>~~aee~~|
|1.<br>Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Cosswhen VDS<br>increases from 0 to 80% VDSS<br>Qg<br>Total gate charge<br>VDD= 480 V, ID= 13 A,<br>VGS= 10 V<br>(see_Figure 15_)<br>-<br>21.5<br>-<br>nC<br>Qgs<br>Gate-source charge<br>-<br>3.2<br>-<br>nC<br>Qgd<br>Gate-drain charge<br>-<br>11.3<br>-<br>nC<br>~~So~~<br>~~oe~~<br>~~—_~~<br>~~sa~~<br>~~—_~~<br>~~TT~~|
|**Table 7. Switching times**|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**|
|td(on)<br>Turn-on delay time<br>-<br>12<br>-<br>ns|
|VDD= 300 V, ID= 6.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 14_and_Figure 19_)<br>tr<br>Rise time<br>-<br>9<br>-<br>ns<br>td(off)<br>Turn-off delay time<br>-<br>47<br>-<br>ns|
|tf<br>Fall time<br>-<br>10.6<br>-<br>ns|



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**STF18N60M2** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**<br>~~a~~|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||13|A|
|ISDM (1)<br>~~a~~<br>~~a~~|Source-drain current (pulsed)||-||52|A|
|VSD (2)<br>~~a~~<br>~~a~~<br>~~es~~|Forward on voltage<br>~~ee~~|ISD= 13 A, VGS= 0<br>~~|~~|-<br>~~|~~<br>~~|~~|~~|~~|1.6<br>~~|~~|V|
|trr<br>~~a~~<br>~~es~~<br>~~re~~|Reverse recovery time<br>~~ee~~|ISD= 13 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 16_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|305<br>~~|~~<br>~~|~~|~~|~~|ns|
|Qrr<br>~~es~~<br>~~re~~<br>~~re~~|Reverse recovery charge<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|3.3<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|μC|
|IRRM<br>~~re~~<br>~~re~~<br>~~re~~|Reverse recovery current<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|22<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~|A|
|trr<br>~~re~~<br>~~re~~<br>~~ee~~|Reverse recovery time<br>~~ee~~|ISD= 13 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 16_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~||~~|417<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~|ns|
|Qrr<br>~~re~~<br>~~ee~~<br>~~rs~~|Reverse recovery charge<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~||~~<br>~~||~~|4.6<br>~~|~~<br>~~|~~<br>~~|~~|~~ft~~|μC<br>~~ft~~|
|IRRM<br>~~ee~~<br>~~rs~~|Reverse recovery current||-<br>~~| |~~<br>~~||~~|22<br>~~|~~<br>~~|~~|~~ft~~|A<br>~~ft~~|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

DocID024729 Rev 3 

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**STF18N60M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**==> picture [206 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15834v1<br>(A)<br>NON N \<br>10<br>. XK. \ \<br>10µs<br>SSS<br>uN ‘SY<br>1 on 100µs<br>SS 1ms<br>Tj=150°C 10ms<br>0.1<br>Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

**==> picture [190 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15837v1<br>ID<br>(A) VGS=7, 8, 9, 10V<br>30<br>25<br>6V<br>20<br>15<br>10<br>5V<br>5<br>4V<br>0<br>0 5 10 15 20 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [196 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Transfer characteristics<br>AM15838v1<br>ID (A)<br>VDS=18V<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


**Figure 6. Gate charge vs gate-source voltage** 

## **Figure 7. Static drain-source on-resistance** 

**==> picture [427 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15839v1VDS RDS(on) AM15840v1<br>(V) (Ω)<br>VDD=480V (V)<br>12 VDSVDS ID=13A 500 0.270 VGS=10V<br>10<br>400 0.265<br>8<br>300 0.260<br>6<br>200 0.255<br>4<br>2 100 0.250<br>0 0 0.245<br>0 5 10 15 20 25 Qg(nC) 0 2 4 6 8 10 12 ID(A)<br>**----- End of picture text -----**<br>


6/13 DocID024729 Rev 3 ~~>~~ 

**STF18N60M2** 

**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**Figure 9. Normalized gate threshold voltage vs. temperature** 

**==> picture [426 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15841v1 VGS(th) AM15828v1<br>(pF) (norm)<br>ID=250 µA<br>1.1<br>1000<br>Ciss<br>1.0<br>100<br>0.9<br>Coss<br>10<br>0.8<br>Crss<br>1 0.7<br>0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized on-resistance vs temperature** 

**Figure 11. Source-drain diode forward characteristics** 

**==> picture [431 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15829v1 VSD (V) AM15842v1<br>(norm)<br>2.5 I D =6.5 A<br>1.4<br>2.3 VGS=10V<br>2.1 1.2<br>TJ=-50°C<br>1.9 1<br>1.7<br>0.8<br>1.5<br>1.3 0.6 T J =25°C<br>TJ=150°C<br>1.1<br>0.4<br>0.9<br>0.2<br>0.7<br>0.5 0<br>-50 -25 0 25 50 75 100 125 TJ(°C) 0 2 4 6 8 10 12 ISD(A)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized V(BR)DSS vs temperature** 

**Figure 13. Output capacitance stored energy** 

**==> picture [440 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM15831v1 Eoss(µJ) AM15843v1<br>(norm)<br>1.11 I D =1mA<br>6<br>1.09<br>1.07 5<br>1.05<br>4<br>1.03<br>3<br>1.01<br>0.99 2<br>0.97<br>1<br>0.95<br>0.93 0<br>-50 -25 0 25 50 75 100 125 TJ(°C) 0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


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**STF18N60M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for resistive load** 

**Figure 15. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STF18N60M2** 

**Package mechanical data** 

## **Figure 20. TO-220FP drawing** 

**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-220FP mechanical data** 

||**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.4|~~ee ee~~|4.6<br>~~ee~~|
|B<br>~~a~~|2.5||2.7|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~|0.45<br>||0.7<br>|
|F<br>~~Ge~~|0.75<br>~~Ge~~|~~Ge~~|1<br>~~Ge~~|
|F1<br>~~Ge~~|1.15<br>~~Ge~~|~~Ge~~|1.70<br>~~Ge~~|
|F2<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95||5.2|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~|10<br>||10.4<br>|
|L2<br>~~Ge~~|~~Ge~~|16<br>~~Ge~~|~~Ge~~|
|L3<br>~~Ge~~|28.6<br>~~Ge~~|~~Ge~~|30.6<br>~~Ge~~|
|L4<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9||3.6|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9||9.3|
|Dia<br>~~a~~|3||3.2|



DocID024729 Rev 3 

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**STF18N60M2** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Jun-2013|1|First release.|
|05-Jun-2013|2|– Added:note _2_in_Table 2_<br>– Modified: typical value for Ciss, Coss eq., Qg, Qgs, Qgd<br>– Modified:_Figure 10_and_11_<br>– Minor text changes|
|28-Feb-2014|3|– Modified: note 1 in_Table 2_<br>– Rthj-casevalue in_Table 3_<br>– Minor text changes|



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DocID024729 Rev 3 

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## Links

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