# Power MOSFET, N Channel, 550 V, 13 A, 0.18 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2098206/)

**URL**: https://novapart.co/products/STF18N55M5/power-mosfet-n-channel-550-v-13-a-018-ohm-to-220fp
**SKU**: STF18N55M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5700
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 550V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.18ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098206/)

**STB18N55M5, STD18N55M5,** Lk ,f | augmented **STF18N55M5, STP18N55M5** N-channel 550 V, 0.150 Ω typ., 16 A, MDmesh™ V Power MOSFETs in D²PAK, DPAK, TO-220FP and TO-220 packages 

**Datasheet** - **production data** 

**Features** 

**==> picture [429 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB Order codes VDS @ TJmax RDS(on) max ID<br>3<br>3 1 STB18N55M5<br>1<br>DPAK<br>STD18N55M5<br>D²PAK<br>600 V 0.192  Ω 16 A<br>STF18N55M5<br>TAB<br>STP18N55M5<br>Se © =n • Higher VDSS rating<br>1 2 3 1 2 3 • High dv/dt capability<br>TO-220FP TO-220 • Excellent switching performance<br>**----- End of picture text -----**<br>


- Excellent switching performance 

- Easy to drive 

**Figure 1.  Internal schematic diagram** 

- 100% avalanche tested 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB18N55M5|18N55M5|D²PAK|Tape and reel|
|STD18N55M5||DPAK||
|STF18N55M5||TO-220FP|Tube|
|STP18N55M5||TO-220||



November 2013 DocID17078 Rev 3 

1/24 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23**|



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DocID17078 Rev 3 

**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220, DPAK,**<br>**D²PAK**|**TO-220FP**||
|VGS|Gate-source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|16|16(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|10|10(1)|A|
|IDM<br>(2)|Drain current (pulsed)|64|64(1)|A|
|PTOT|Total dissipation at TC= 25 °C|110|25|W|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tjmax)|4||A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50 V)|210||mJ|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)||2500|V|
|Tstg|Storage temperature|- 55 to 150||°C|
|Tj|Max. operating junction temperature|150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 16 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 340 V. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**D²PAK**|**DPAK**|**TO-220**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|1.14|||5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|||62.5||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max|30|50|||°C/W|



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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|550|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 550 V|||1|µA|
|||VDS= 550 V, TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 8 A||0.150|0.192|Ω|



**Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|1260|-|pF|
|Coss|Output capacitance||-|42|-|pF|
|Crss|Reverse transfer<br>capacitance||-|3.6|-|pF|
|Co(tr)<br>(1)|Equivalent<br>capacitance time<br>related|VDS= 0 to 440 V|-|103|-|pF|
|Co(er)<br>(2)|Equivalent<br>capacitance energy<br>related||-|35|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|2.8|-|Ω|
|Qg|Total gate charge|VDD= 440 V, ID= 8 A,<br>VGS= 10 V<br>(see_Figure 20_)|-|31|-|nC|
|Qgs|Gate-source charge||-|8.3|-|nC|
|Qgd|Gate-drain charge||-|14.2|-|nC|



1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Electrical characteristics** 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(v)|Voltage delay time|VDD= 400 V, ID= 10.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 19_,_Figure 24_)|-|37|-|ns|
|tr(v)|Voltage rise time||-|7|-|ns|
|tf(i)|Current fall time||-|8.3|-|ns|
|tc(off)|Crossing time||-|10.3|-|ns|



**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||16|A|
|ISDM (1)|Source-drain current (pulsed)||-||64|A|
|VSD (2)|Forward on voltage|ISD= 16 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 16 A, di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 21_)|-|244||ns|
|Qrr|Reverse recovery charge||-|2.8||µC|
|IRRM|Reverse recovery current||-|23||A|
|trr|Reverse recovery time|ISD= 16 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 21_)|-|295||ns|
|Qrr|Reverse recovery charge||-|3.7||µC|
|IRRM|Reverse recovery current||-|25||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID17078 Rev 3 

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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance for D²PAK and TO-220 TO-220** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM16073v1<br>(A)<br>10 10µs<br>100µs<br>1ms<br>1<br>10ms<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [174 x 168] intentionally omitted <==**

**Figure 4. Safe operating area for DPAK** 

## **Figure 5. Thermal impedance for DPAK** 

**==> picture [462 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM16074v1<br>(A)<br>10µs<br>10<br>100µs<br>1 1ms<br>Tj=150°C 10ms<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>Figure 6. Safe operating area TO220FP Figure 7. Thermal impedance for TO-220FP<br>ID AM16075v1<br>(A)<br>10<br>10µs<br>1 100µs<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Electrical characteristics** 

## **Figure 8.  Output characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16076v1<br>ID (A)<br>VGS=9, 10V<br>8V<br>30<br>7V<br>20<br>10<br>6V<br>0<br>0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Gate charge vs gate-source voltage** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM16078v1<br>VDS<br>(V)<br>VDS VDD=440V (V)<br>12 I D =8A<br>400<br>10<br>350<br>300<br>8<br>250<br>6<br>200<br>4 150<br>100<br>2<br>50<br>0 0<br>0 5 10 15 20 25 30 35 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 12.  Capacitance variations** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM16080v1<br>(pF)<br>10000<br>Ciss<br>1000<br>100<br>Coss<br>10<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Transfer characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16077v1<br>ID (A)<br>VDS=25V<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 11. Static drain-source on-resistance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16079v1<br>RDS(on)<br>(Ω) VGS=10V<br>0.18<br>0.17<br>0.16<br>0.15<br>0.14<br>0.13<br>0.12<br>0 2 4 6 8 10 12 14 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 13. Output capacitance stored energy** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16081v1<br>Eoss (µJ)<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 VDS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs. temperature** 

**Figure 15. Normalized on-resistance vs. temperature** 

**==> picture [462 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM05459v1 RDS(on) AM05460v1<br>(norm) VDS = VGS (norm) VGS = 10 V<br>1.10 ID = 250 µA 2.1 ID = 8 A<br>1.9<br>1.00 1.7<br>1.5<br>0.90 1.3<br>1.1<br>0.80 0.9<br>0.7<br>0.70 0.5<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>Figure 16. Drain-source diode forward  Figure 17. Normalized VDS vs. temperature<br>characteristics<br>VSD AM05461v1 VDS AM10399v1<br>(V) TJ=-50°C (norm)<br>1.08<br>1.2 ID = 1mA<br>1.06<br>1.0<br>1.04<br>0.8 1.02<br>TJ=25°C<br>1.00<br>0.6<br>TJ=150°C 0.98<br>0.4<br>0.96<br>0.2<br>0.94<br>0 0.92<br>0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 18. Switching losses vs. gate resistance[(1)]** 

**==> picture [232 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
E AM16082v1<br>(µJ) ID=10.5A Eon<br>250 VDD=440V<br>VGS=10V<br>200<br>150<br>100<br>Eoff<br>50<br>0<br>0 5 10 15 20 25 30 35 40 RG(Ω)<br>1. Eon including reverse recovery of a SiC diode<br>**----- End of picture text -----**<br>


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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for resistive load** 

**Figure 20. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 23. Unclamped inductive waveform** 

## **Figure 24. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS Id Concept waveform for Inductive Load Turn-off<br>VD<br>90%Vds 90%Id<br>Tdelay -off<br>IDM<br>Vgs<br>90%Vgs on<br>ID<br>Vgs(I(t ))<br>VDD VDD 10%Vds 10%Id<br>Vds<br>Trise Tfall<br>AM01472v1 Tcross - over AM05540v1<br>**----- End of picture text -----**<br>


DocID17078 Rev 3 

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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/24 

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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Package mechanical data** 

**Table 8. D²PAK (TO-263) mechanical data** 

||**Table 8. D²PAK(TO-263) mechanical data**|**Table 8. D²PAK(TO-263) mechanical data**|**Table 8. D²PAK(TO-263) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



DocID17078 Rev 3 

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**Package mechanical data** 

**==> picture [166 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


## **Figure 26. D²PAK footprint[(a)]** 

**==> picture [405 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. DPAK (TO-252) type A mechanical data** 

||**Table 9. DPAK(TO-252) type A mechanical data**|**Table 9. DPAK(TO-252) type A mechanical data**|**Table 9. DPAK(TO-252) type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)||2.80||
|L2||0.80||
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 27. DPAK (TO-252) type A drawing** 

**==> picture [405 x 566] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_M_type_A<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**==> picture [212 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. DPAK (TO-252) type A footprint  [(b)]<br>**----- End of picture text -----**<br>


**==> picture [405 x 348] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint_REV_M_type_A<br>**----- End of picture text -----**<br>


- b. All dimensions are in millimeters 

DocID17078 Rev 3 

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**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Package mechanical data** 

## **Figure 29. TO-220FP drawing** 

**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


DocID17078 Rev 3 

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**STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5** 

**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

||**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

## **Figure 30. TO-220 type A drawing** 

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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 12. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty.|1000|
|P2|1.9|2.1||Bulk qty.|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Packaging mechanical data** 

**Table 13. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Packaging mechanical data** 

## **Figure 31. Tape for D²PAK and DPAK** 

**==> picture [399 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>P0 D P2<br>T<br>E<br>1 So b o do 0 b O0<br>F<br>K0 W<br>B1 B0<br>A P E EI RILI E EL<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ts<br>User direction of feed<br>R<br>SS a eae<br>[> Bending radius<br>User direction of feed<br>AM08852v1<br>Figure 32. Reel for D²PAK and DPAK<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>G measured<br>Tape slot<br>In core for<br>Full radius At hub<br>Tape start<br>AM08851v1<br>**----- End of picture text -----**<br>


**==> picture [77 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
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**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Feb-2010|1|First release.|
|04-Mar-2011|2|– Document status promoted from preliminary data to datasheet;<br>– Added new package, mechanical data: D²PAK.|
|22-Nov-2013|3|– Updated: title on the cover page and RDS(on)values.<br>– Modified: EASvalue andnote _3_in_Table 2_<br>– Modified: RDS(on)value in_Table 4_, typical values in_Table 5_and_7_<br>– Updated: the entire_Table 5_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Section 4: Package mechanical data_and_Section 5:_<br>_Packaging mechanical data_<br>– Updated:_Figure 11_and_18_<br>– Minor text changes.|



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