# Power MOSFET, N Channel, 650 V, 10 A, 0.37 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3132737/)

**URL**: https://novapart.co/products/STF13N65M2/power-mosfet-n-channel-650-v-10-a-037-ohm-to-220fp
**SKU**: STF13N65M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7030
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.37ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132737/)

## **STF13N65M2, STFI13N65M2** 

N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages 

**Datasheet** - **production data** 

## **Features** 

**==> picture [160 x 31] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1 [2] 1 2 3<br>TO-220FP I [2] PAKFP (TO-281)<br>**----- End of picture text -----**<br>


**R Order code VDS DS(on) ID max** STF13N65M2 650 V 0.43 Ω 10A STFI13N65M2 ~~re~~ • Extremely low gate charge 

- Excellent output capacitance (Coss) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Figure 1. Internal schematic diagram** 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF13N65M2|13N65M2|TO-220FP|Tube|
|STFI13N65M2||I2PAKFP (TO-281)||



December 2014 

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_www.st.com_ 

|**Contents**|**STF13N65M2,STFI13N65M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7**|
||4.1<br>TO-220FP, STF13N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||4.2<br>I2PAKFP (TO-281), STFI13N65M2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

||**Table 2. Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|10(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|6.3(1)|A|
|IDM<br>(2)|Drain current (pulsed)|40(1)|A|
|PTOT|Total dissipation at TC= 25 °C|25|W|
|VISO|Insulation withstand voltage (RMS) from all three leads to<br>external heat sink (t = 1 s; TC= 25 °C)|2500|V|
|dv/dt(3)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150||



1. Limited by maximum junction temperature.. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 10 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 

4. VDS ≤ 520 V 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|°C/W|



**Table 4. Avalanche characteristics** 

||**Table 4. Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not repetitive<br>(pulse width limited by Tjmax)|1.8|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR; VDD= 50 V)|350|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0 V|650|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 650 V|||1|µA|
|||VDS= 650 V, TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 5 A||0.37|0.43|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|590|-|pF|
|Coss|Output capacitance||-|27.5|-|pF|
|Crss|Reverse transfer<br>capacitance||-|1.1|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VDS= 0 to 520 V, VGS= 0 V|-|168.5|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|6.5|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 10 A,<br>VGS= 10 V, (see_Figure 15_)|-|17|-|nC|
|Qgs|Gate-source charge||-|3.3|-|nC|
|Qgd|Gate-drain charge||-|7|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 325 V, ID= 5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 14_and_Figure 19_)|-|11|-|ns|
|tr|Rise time||-|7.8|-|ns|
|td(off)|Turn-off delay time||-|38|-|ns|
|tf|Fall time||-|12|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||10|A|
|ISDM (1)|Source-drain current (pulsed)||-||40|A|
|VSD (2)|Forward on voltage|ISD= 10 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/µs,<br>VDD= 60 V (see_Figure 16_)|-|312||ns|
|Qrr|Reverse recovery charge||-|2.7||µC|
|IRRM|Reverse recovery current||-|17.5||A|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C,<br>(see_Figure 16_)|-|464||ns|
|Qrr|Reverse recovery charge||-|4.1||µC|
|IRRM|Reverse recovery current||-|17.5||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**STF13N65M2,STFI13N65M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Normalized VBR(DSS) vs temperature** 

**Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**Figure 10. Normalized gate threshold voltage vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

## **Figure 9. Capacitance variations** 

**Figure 11. Normalized on-resistance vs temperature** 

**Figure 13. Output capacitance stored energy** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for resistive load** 

**Figure 15. Gate charge test circuit** 

**==> picture [215 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
RL 2200 3.3<br>μF μF<br>VDD<br>— VD<br>VGS<br>— RG D.U.T.<br>PW<br>_ in =<br>AM01468v1<br>**----- End of picture text -----**<br>


**==> picture [460 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Test circuit for inductive load  Figure 17. Unclamped inductive load test circuit<br>switching and diode recovery times<br>L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>aa ttt<br>Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **4.1 TO-220FP, STF13N65M2** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-220FP mechanical data** 

||**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Ø|3||3.2|



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**Package mechanical data** 

## **4.2 I[2] PAKFP (TO-281), STFI13N65M2** 

**==> picture [176 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. I [2] PAKFP (TO-281) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 288] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������������<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. I[2] PAKFP (TO-281) mechanical data** 

||**Table 10. I2PAKFP(TO-281) mechanical data**|**Table 10. I2PAKFP(TO-281) mechanical data**|**Table 10. I2PAKFP(TO-281) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40|-|4.60|
|B|2.50||2.70|
|D|2.50||2.75|
|D1|0.65||0.85|
|E|0.45||0.70|
|F|0.75||1.00|
|F1|||1.20|
|G|4.95||5.20|
|H|10.00||10.40|
|L1|21.00||23.00|
|L2|13.20||14.10|
|L3|10.55||10.85|
|L4|2.70||3.20|
|L5|0.85||1.25|
|L6|7.50|7.60|7.70|



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**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Oct-2014|1|Initial release|
|18-Dec-2014|2|Text edits throughout document<br>Updated_Section 1: Electrical ratings_<br>Updated_Section 2: Electrical characteristics_<br>Added_Section 2.1: Electrical characteristics (curves)_<br>Updated_Section 4.2: I2PAKFP (TO-281), STFI13N65M2_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stf13n65m2/mosfet-n-ch-650v-10a-150deg-c/dp/3132737)
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