# Power MOSFET, N Channel, 650 V, 9 A, 0.43 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2807245/)

**URL**: https://novapart.co/products/STF11N65M5/power-mosfet-n-channel-650-v-9-a-043-ohm-to-220fp
**SKU**: STF11N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7300
**Stock**: 200+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.43ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh V |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.43ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807245/)

## **STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D[2] PAK, DPAK, TO-220FP, TO-220 and IPAK packages 

## **Datasheet — production data** 

## **Features** 

|**Order codes**|**VDSS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB11N65M5|710 V|< 0.48Ω|9 A|
|STD11N65M5||||
|STF11N65M5||||
|STP11N65M5||||
|STU11N65M5||||



- Worldwide best R * area DS(on) 

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**----- Start of picture text -----**<br>
TAB<br>TAB<br>2 2 3<br>3 1<br>1<br>3<br>D [2] PAK DPAK 1 2<br>TO-220FP<br>TAB<br>3<br>2 3 1 2<br>1<br>IPAK<br>TO-220<br>**----- End of picture text -----**<br>


- Higher VDSS rating and high dv/dt capability 

- Excellent switching performance 

## **Figure 1. Internal schematic diagram** 

- 100% avalanche tested 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which  is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 

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## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB11N65M5|11N65M5|D2PAK|Tape and reel|
|STD11N65M5||DPAK||
|STF11N65M5||TO-220FP|Tube|
|STP11N65M5||TO-220||
|STU11N65M5||IPAK||



1/25 

December 2012 

Doc ID 022864 Rev 2 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24**|



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**Electrical ratings** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**D2PAK**<br>**DPAK**<br>**TO-220**<br>**IPAK**|**TO-220FP**||
|VGS|Gate-source voltage|± 25||V|
|ID|Drain current (continuous) at TC= 25 °C|9|9(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|5.6|5.6(1)|A|
|IDM<br>(1)|Drain current (pulsed)|36|36(1)|A|
|PTOT|Total dissipation at TC= 25 °C|85|25|W|
|dv/dt(2)|Peak diode recovery voltage slope|15||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)||2500|V|
|Tstg|Storage temperature|- 55 to 150||°C|
|Tj|Max. operating junction temperature|150||°C|



1. Limited by maximum junction temperature. 

2. ISD ≤  9 A, di/dt  ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||||**Unit**|
|||**D2PAK**|**DPAK**|**TO-220FP **|**TO-220 **|**IPAK**||
|Rthj-case|Thermal resistance junction-case<br>max|1.47||5.0|1.47||°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb<br>max|30|50||||°C/W|
|Rthj-amb|Thermal resistance junction-<br>ambient max|||62.5||100|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board. 

## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetetive or not repetetive<br>(pulse width limited by Tjmax)|2|A|
|EAS|Single pulse avalanche energy (starting tj=25°C,<br>Id= IAR; Vdd=50)|130|mJ|



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**Electrical characteristics** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

## **Table 5. On /off states** 

|**Table 5.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|650|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 650 V<br>VDS= 650 V, TC=125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 4.5 A||0.43|0.48|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|644<br>18<br>2.5|-|pF<br>pF<br>pF|
|Co(tr)<br>(1)|Equivalent<br>capacitance time<br>related|VDS= 0 to 520 V, VGS= 0|-|55|-|pF|
|Co(er)<br>(2)|Equivalent<br>capacitance energy<br>related||-|17|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|5|-|Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 520 V, ID= 4.5 A,<br>VGS= 10 V<br>(see_Figure 20_)|-|17<br>4.6<br>8.5|-|nC<br>nC<br>nC|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(v)<br>tr(v)<br>tf(i)<br>tc(off)|Voltage delay time<br>Voltage rise time<br>Current fall time<br>Crossing time|VDD= 400 V, ID= 7.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 21_and<br>_Figure 24_)|-|23<br>10<br>13.5<br>13|-|ns<br>ns<br>ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||9<br>36|A<br>A|
|VSD (2)|Forward on voltage|ISD= 9 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 9 A, di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 21_)|-|232<br>2<br>17.5||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 9 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 21_)|-|328<br>2.8<br>17||ns<br>µC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance DPAK and IPAK IPAK** 

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ID AM15398v1<br>(A)<br>10 10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1 Tj=150°C<br>Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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## **Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP** 

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ID AM15399v1<br>(A)<br>10<br>10µs<br>1 100µs<br>1ms<br>0.1 Tj=150°C 10ms<br>Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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**Figure 6. Safe operating area for TO-220 and Figure 7. Thermal impedance for TO-220 and D[2] PAK D[2] PAK** 

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ID AM15400v1<br>(A)<br>10<br>10µs<br>100µs<br>1 1ms<br>10ms<br>0.1 Tj=150°C<br>Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Figure 8. Output characteristics** 

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ID AM15401v1<br>(A) VGS=10V<br>16<br>8V<br>14<br>7V<br>12<br>10<br>8<br>6<br>4<br>2<br>6V<br>0<br>0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Transfer characteristics** 

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ID AM15402v1<br>(A)<br>16<br>VDS=25V<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance** 

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AM15403v1<br>VGS VDS<br>(V) VDD=520V (V)<br>12<br>ID=4.5A 500<br>10<br>400<br>8<br>300<br>6<br>200<br>4<br>1 00<br>2<br>0 0<br>0 5 10 15 20 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 12. Capacitance variations** 

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AM15404v1<br>RDS(on)<br>(Ω)<br>0.55<br>VGS=10V<br>0.5<br>0.45<br>0.4<br>0.35<br>0.3<br>0.25<br>0 1 2 3 4 5 6 7 8 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 13. Output capacitance stored energy** 

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C AM15405v1 Eoss AM15406v1<br>(pF) (µJ)<br>3.5<br>1000 3<br>Ciss<br>2.5<br>100 2<br>1.5<br>Coss<br>10 1<br>0.5<br>Crss<br>1 0<br>0.1 1 10 100 VDS(V) 0 200 400 600 VDS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

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Figure 14. Normalized on-resistance vs  Figure 15. Normalized gate threshold voltage<br>temperature vs temperature<br>RDS(on) AM05460v1 VGS(th) AM05459v1<br>(norm) VGS = 10 V (norm) VDS = VGS<br>2.1 ID = 4.5 A 1.10 ID = 250 µA<br>1.9<br>1.7 1.00<br>1.5<br>1.3 0.90<br>1.1<br>0.9 0.80<br>0.7<br>0.5 0.70<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 16. Drain-source diode forward characteristics** 

**Figure 17. Normalized BVDSS vs temperature** 

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VSD AM05461v1 VDS AM10399v1<br>(V) TJ=-50°C (norm)<br>1.08<br>1.2 ID = 1mA<br>1.06<br>1.0<br>1.04<br>0.8 1.02<br>TJ=25°C<br>1.00<br>0.6<br>TJ=150°C 0.98<br>0.4<br>0.96<br>0.2<br>0.94<br>0 0.92<br>0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 18. Switching losses vs gate resistance[(1)]** 

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E(μJ) AM15407v1<br>VDD=400V<br>VGS=10V<br>100 ID=6A Eon<br>80<br>60<br>40<br>Eoff<br>20<br>0<br>0 5 10 15 20 25 30 35 40 45 RG(Ω)<br>**----- End of picture text -----**<br>


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1. Eon including reverse recovery of a SiC diode<br>**----- End of picture text -----**<br>


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**Test circuits** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load** 

**Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit** 

## **Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform** 

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**----- Start of picture text -----**<br>
Concept waveform for Inductive Load Turn-off<br>Id : i i<br>90%Vds 90%Id<br>Tdelay -off<br>Vgs<br>90%Vgs on<br>Vgs(I(t ))<br>10%Vds | | 10%Id<br>Vds<br>Trise Tfall<br>-<br>Tcross - over AM05540v2<br>**----- End of picture text -----**<br>


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**Package mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Table 9. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Figure 25. D²PAK (TO-263) drawing** 

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**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


## **Figure 26. D²PAK footprint[(a)]** 

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**----- Start of picture text -----**<br>
16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


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a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Table 10. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1|||
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Figure 27. DPAK (TO-252) drawing** 

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**----- Start of picture text -----**<br>
0068772_I<br>**----- End of picture text -----**<br>


## **Figure 28. DPAK footprint[(b)]** 

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**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


b. All dimensions are in millimeters 

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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Table 11. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Figure 29. TO-220FP drawing** 

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**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Table 12. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Figure 30. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Table 13. IPAK (TO-251) mechanical data** 

|**DIM**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**min.**|**typ.**|**max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



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**Package mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **Figure 31. IPAK (TO-251) drawing** 

**==> picture [405 x 456] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_J<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **5 Packaging mechanical data** 

**Table 14. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Packaging mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

**Table 15. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Packaging mechanical data** 

**==> picture [404 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 32. Tape<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B0<br>| OO ©) ® @ 6)<br>HY } tI Eel e l lel<br>‘ Liss<br>A0 P1 D1<br>————_<br>User direction of feed<br>R<br>\ F ¢ ¢/¢ ¢/¢ ¢/4 ¢/4 4/4 ¢<br>erates<br>a DDD a a |<br>—_> Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


## **Figure 33. Reel** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


Doc ID 022864 Rev 2 23/25 ~~MWeee~~ 

**Revision history** 

**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

## **6 Revision history** 

## **Table 16. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|23-Feb-2012|1|First release.|
|03-Dec-2012|2|– Minor text changes in cover page<br>– Added IPAK packages<br>– Added_Section 2.1: Electrical characteristics (curves)_<br>– Updated_Section 5: Packaging mechanical data_<br>– Modified:note _2_on_Table 2_<br>– Updated: mechanical data for TO-220FP package|



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**STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5** 

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Doc ID 022864 Rev 2 



## Links

- [View this product on Novapart](https://novapart.co/products/STF11N65M5/power-mosfet-n-channel-650-v-9-a-043-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stf11n65m5/mosfet-n-ch-650v-9a-to-220fp/dp/2807245)
---

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