# Power MOSFET, N Channel, 650 V, 10 A, 1 ohm, TO-220FP, Through Hole ![Product image](https://novapart.co/image/farnell:2098194/) **URL**: https://novapart.co/products/STF10N65K3/power-mosfet-n-channel-650-v-10-a-1-ohm-to-220fp **SKU**: STF10N65K3 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.6450 **Stock**: 200+ **Lead Time**: 113 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 35W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220FP | | Drain Source Voltage Vds | 650V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 10A | | Drain Source On State Resistance | 1ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2098194/) ## **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D[2] PAK, TO-220FP, I[2] PAKFP and TO-220 packages **Datasheet** - **production data** **==> picture [155 x 151] intentionally omitted <==** **----- Start of picture text -----**
TAB
3
1
3
2
D [2] PAK 1
TO-220FP
TAB
3
2
1
I [2] PAKFP (TO-281) TO-220
**----- End of picture text -----**
## **Features** |**Order codes**|**VDS**|RDS(on)max|ID|PTOT| |---|---|---|---|---| |STB10N65K3|650 V|1Ω|10 A|150 W| |STF10N65K3||||35 W| |STFI10N65K3||||| |STP10N65K3||||150 W| - 100% avalanche tested - Extremely low on-resistance RDS(on) - Gate charge minimized - Very low intrinsic capacitances ## **Figure 1. Internal schematic diagram** - Improved diode reverse recovery characteristics - Zener-protected ## **Applications** - Switching applications ## **Description** **==> picture [31 x 5] intentionally omitted <==** **----- Start of picture text -----**
AM01476v1
**----- End of picture text -----**
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. **Table 1. Device summary** |**Order codes**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STB10N65K3|10N65K3|D2PAK|Tape and reel| |STF10N65K3||TO-220FP|Tube| |STFI10N65K3||I2PAKFP (TO-281)|| |STP10N65K3||TO-220|| August 2013 DocID15732 Rev 4 1/21 This is information on a product in full production. _www.st.com_ |**Contents**|**STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**| |**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**| 2/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical ratings** ## **1 Electrical ratings** **Table 2. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |||**TO-220FP**
**I2PAKFP**|**D2PAK,**
**TO-220**|| |VDS|Drain source voltage|650||V| |VGS|Gate-source voltage|± 30||V| |ID|Drain current (continuous) at TC= 25 °C|10||A| |ID|Drain current (continuous) at TC= 100 °C|6.3||A| |IDM
(1)|Drain current (pulsed)|40||A| |PTOT|Total dissipation at TC= 25 °C|35|150|W| |IAR|Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)|7.2||A| |EAS|Single pulse avalanche energy(2)|212||mJ| ||Derating factor|0.28|1.2|W/°C| |dv/dt(3)|Peak diode recovery voltage slope|12||V/ns| |ESD|Gate-source human body model
(R = 1.5 kΩ, C = 100 pF)|2.8||kV| |VISO|Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)|
2500||V| |Tj|Operating junction temperature|-55 to 150||°C| |Tstg|Storage temperature|||°C| 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 3. ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS **Table 3. Thermal data** |**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---| |||**D2PAK**|**TO-220FP**
**I2PAKFP**|**TO-220**|| |Rthj-case|Thermal resistance junction-case max|0.83|3.57|0.83|°C/W| |Rthj-amb|Thermal resistance junction-ambient max||62.5||°C/W| |Rthj-pcb|Thermal resistance junction-pcb max|30|||°C/W| DocID15732 Rev 4 3/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical characteristics** ## **2 Electrical characteristics** (Tcase = 25 °C unless otherwise specified) **Table 4. On /off states** |||**Table 4. On /off states**||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0|650|||V| |IDSS|Zero gate voltage
drain current (VGS= 0)|VDS= 650 V
VDS= 650 V, TC=125 °C|||1|µA| ||||||50|µA| |IGSS|Gate-body leakage
current (VDS= 0)|VGS= ± 20 V|||±10|µA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3||4.5|V| |RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 3.6 A||0.75|1|Ω| ## **Table 5. Dynamic** |||**Table 5. Dynamic**||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,
VGS= 0|-|1180|-|pF| |Coss|Output capacitance||-|125|-|pF| |Crss|Reverse transfer
capacitance||-|14|-|pF| |Coss eq.|Equivalent output
capacitance|VDS= 0 to 520 V, VGS= 0|-|77|-|pF| |RG|Intrinsic gate
resistance|f=1 MHz, ID=0|-|3|-|Ω| |Qg|Total gate charge|VDD= 520 V, ID= 7.2 A,
VGS= 10 V
(see_Figure 18_)|-|42|-|nC| |Qgs|Gate-source charge||-|7.4|-|nC| |Qgd|Gate-drain charge||-|23|-|nC| ## **Table 6. Switching times** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---| |td(on)|Turn-on delay time|VDD= 310 V, ID= 3.5 A,
RG= 4.7Ω,VGS= 10 V
(see_Figure 17_)|-|14.5|-|ns| |tr|Rise time||-|14|-|ns| |td(off)|Turn-off-delay time||-|44|-|ns| |tf|Fall time||-|35|-|ns| 4/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical characteristics** **Table 7. Source drain diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ISD|Source-drain current||-||7.2|A| |ISDM (1)|Source-drain current (pulsed)||||28.8|A| |VSD (2)|Forward on voltage|ISD= 7 A, VGS= 0|-||1.5|V| |trr|Reverse recovery time|ISD= 7 A, di/dt = 100A/µs
VDD= 60 V (see_Figure 22_)|-|320||ns| |Qrr|Reverse recovery charge||-|2||µC| |IRRM|Reverse recovery current||-|13||A| |trr|Reverse recovery time|ISD= 7 A, di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C
(see_Figure 22_)|-|410||ns| |Qrr|Reverse recovery charge||-|2.9||µC| |IRRM|Reverse recovery current||-|14||A| 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% **Table 8. Gate-source Zener diode** |**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID=0|30|-|-|V| The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID15732 Rev 4 5/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area for D[2] PAK and Figure 3. Thermal impedance for D[2] PAK and TO-220 TO-220** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM15460v1
(A)
1µs
10
10µs
10µs
1ms
1
Tc=25Tj=150 ° °CC 10ms
Sinlge
pulse
0.1
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**==> picture [172 x 167] intentionally omitted <==** **Figure 4. Safe operating area for TO-220FP and Figure 5. Thermal impedance for TO-220FP and I[2] PAKFP I[2] PAKFP** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM03922v1
(A)
10
10µs
100µs
1 1ms
10ms
0.1 Tj=150°C
Tc=25°C
Sinlge
pulse
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**==> picture [173 x 167] intentionally omitted <==** **Figure 6. Output characteristics** **Figure 7. Transfer characteristics** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
ID AM03923v1 ID AM03924v1
(A)
(A)
18
12
VDS = 15 V
16 7V 11
14 VGS=10V 10
9
12
8
10 7
6
8
5
6V
6 4
3
4
2
2 5V 1
0
00 10 20 VDS(V) 1 2 3 4 5 6 7 8 9 VGS(V)
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DocID15732 Rev 4 6/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical characteristics** **Figure 8. Normalized BVDSS vs temperature** **Figure 9. Static drain-source on resistance** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
BVDSS AM03925v1 RDS(on) AM03926v1
(norm) (Ω)
0.95
1.10 VGS= 10 V
0.90
ID= 1 mA
0.85
1.05
0.80
1.00 0.75
0.70
0.95
0.65
0.90 0.60
-75 -50 -25 0 25 50 75 100 125 150 TJ(°C) 0 1 2 3 4 5 6 7 ID(A)
**----- End of picture text -----**
**Figure 10. Output capacitance stored energy** **Figure 11. Capacitance variations** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
Eoss AM03929v1 C AM03928v1
(µJ) (pF)
8
1000
Ciss
7
6
5 100
Coss
4
3
10 Crss
2
1
0 1
0 100 200 300 400 500 600 VDS(V) 0.1 1 10 100 VDS(V)
**----- End of picture text -----**
**Figure 12. Gate charge vs gate-source voltage** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VGS AM03927v1
(V) VDS
VDD=520V (V)
12
500
ID=7A
10
400
8
300
6
200
4
100
2
0 0
0 10 20 30 40 50 Qg(nC)
**----- End of picture text -----**
**Figure 13. Normalized on-resistance vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
RDS(on) AM03931v1
(norm)
2.5
ID= 1.2 A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
**----- End of picture text -----**
DocID15732 Rev 4 7/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage vs temperature** **Figure 15. Maximum avalanche energy vs temperature** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM03930v1 EAS AM03933v1
(norm) (mJ) ID=7.2 A
1.10
220 V DD =50 V
ID= 100 µA
200
180
1.00
160
140
120
0.90
100
80
0.80 60
40
20
0.70 0
-50 -25 0 25 50 75 100 125 150 TJ(°C) 0 20 40 60 80 100 120 140 TJ(°C)
**----- End of picture text -----**
**Figure 16. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VSD AM03932v1
(V) TJ=-50°C
0.9
0.8
TJ=25°C
0.7
0.6 TJ=150°C
0.5
0.4
0.3
0 1 2 3 4 5 6 7 8 ISD(A)
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8/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Test circuits** ## **3 Test circuits** **Figure 17. Switching times test circuit for resistive load** **Figure 18. Gate charge test circuit** **==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times** **==> picture [462 x 346] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
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DocID15732 Rev 4 9/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 10/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** **Table 9. D²PAK (TO-263) mechanical data** ||**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |A1|0.03||0.23| |b|0.70||0.93| |b2|1.14||1.70| |c|0.45||0.60| |c2|1.23||1.36| |D|8.95||9.35| |D1|7.50||| |E|10||10.40| |E1|8.50||| |e||2.54|| |e1|4.88||5.28| |H|15||15.85| |J1|2.49||2.69| |L|2.29||2.79| |L1|1.27||1.40| |L2|1.30||1.75| |R||0.4|| |V2|0°||8°| DocID15732 Rev 4 11/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** **==> picture [166 x 11] intentionally omitted <==** **----- Start of picture text -----**
Figure 23. D²PAK (TO-263) drawing
**----- End of picture text -----**
**==> picture [405 x 320] intentionally omitted <==** **----- Start of picture text -----**
0079457_T
**----- End of picture text -----**
## **Figure 24. D²PAK footprint[(a)]** **==> picture [405 x 232] intentionally omitted <==** **----- Start of picture text -----**
16.90
12.20 5.08
1.60
3.50
9.75
Footprint
**----- End of picture text -----**
**==> picture [126 x 7] intentionally omitted <==** **----- Start of picture text -----**
a. All dimension are in millimeters
**----- End of picture text -----**
12/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** **Table 10. TO-220FP mechanical data** ||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.4||4.6| |B|2.5||2.7| |D|2.5||2.75| |E|0.45||0.7| |F|0.75||1| |F1|1.15||1.70| |F2|1.15||1.70| |G|4.95||5.2| |G1|2.4||2.7| |H|10||10.4| |L2||16|| |L3|28.6||30.6| |L4|9.8||10.6| |L5|2.9||3.6| |L6|15.9||16.4| |L7|9||9.3| |Dia|3||3.2| DocID15732 Rev 4 13/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** ## **Figure 25. TO-220FP drawing** **==> picture [405 x 577] intentionally omitted <==** **----- Start of picture text -----**
7012510_Rev_K_B
**----- End of picture text -----**
14/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** **Table 11. I[2] PAKFP (TO-281) mechanical data** ||**Table 11. I2PAKFP(TO-281) mechanical**|**Table 11. I2PAKFP(TO-281) mechanical**|**data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40|-|4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50| |B|2.50||| |D|2.50||| |D1|0.65||| |E|0.45||| |F|0.75||| |F1|||| |G|4.95||| |H|10.00||| |L1|21.00||| |L2|13.20||| |L3|10.55||| |L4|2.70||| |L5|0.85||| |L6|7.30||| ## **Figure 26. I[2] PAKFP (TO-281) drawing** **==> picture [405 x 288] intentionally omitted <==** **----- Start of picture text -----**
��
**----- End of picture text -----**
**==> picture [77 x 8] intentionally omitted <==** **----- Start of picture text -----**
DocID15732 Rev 4
**----- End of picture text -----**
**==> picture [23 x 8] intentionally omitted <==** **----- Start of picture text -----**
15/21
**----- End of picture text -----**
**STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** **Table 12. TO-220 type A mechanical data** ||**Table 12. TO-220 type A mechanical data**|**Table 12. TO-220 type A mechanical data**|**Table 12. TO-220 type A mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| 16/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Package mechanical data** ## **Figure 27. TO-220 type A drawing** DocID15732 Rev 4 17/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Packaging mechanical data** ## **5 Packaging mechanical data** **Table 13. D²PAK (TO-263) tape and reel mechanical data** ||**Tape**|**Tape**||**Reel**|**Reel**| |---|---|---|---|---|---| |**Dim.**|**mm**||**Dim.**|**mm**|| ||**Min.**|**Max.**||**Min.**|**Max.**| |A0|10.5|10.7|A||330| |B0|15.7|15.9|B|1.5|| |D|1.5|1.6|C|12.8|13.2| |D1|1.59|1.61|D|20.2|| |E|1.65|1.85|G|24.4|26.4| |F|11.4|11.6|N|100|| |K0|4.8|5.0|T||30.4| |P0|3.9|4.1|||| |P1|11.9|12.1||Base qty|1000| |P2|1.9|2.1||Bulk qty|1000| |R|50||||| |T|0.25|0.35|||| |W|23.7|24.3|||| 18/21 DocID15732 Rev 4 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Packaging mechanical data** ## **Figure 28. Tape** **==> picture [399 x 595] intentionally omitted <==** **----- Start of picture text -----**
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
E
17 0.0 0 Sb do 5 6 00 F
K0 W
B1 B0
en a l aln i n ia l er
p T ——
For machine ref. only A0 P1 D1
including draft and
radii concentric around B0 —
User direction of feed
R
nen
—— Bending radius
User direction of feed
AM08852v1
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius Tape slot G measured at hub
in core for
tape start 25 mm min.
width
AM08851v2
**----- End of picture text -----**
DocID15732 Rev 4 19/21 **STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3** **Revision history** ## **6 Revision history** **Table 14. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |30-Jun-2009|1|First release| |14-Nov-2011|2|Updated mechanical data and_Section 2.1: Electrical characteristics_
_(curves)_.
Minor text changes.| |14-Nov-2012|3|– Added: I2PAKFP and TO-220
– Deleted: TIrow
– Added: RDS(on)typical value,_Figure 2_and_3_
– Modified:_Figure 2_
– Updated:_Section 4: Package mechanical data_| |05-Aug-2013|4|– Added: D2PAK package
– Added: Rthj-pcbin_Table 3_
– Updated: figure_Figure 17_,_18_,_19_and_20_
– Updated:_Section 4: Package mechanical data_and_Section 5:_
_Packaging mechanical data_
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