# Power MOSFET, N Channel, 650 V, 88 A, 0.024 ohm, ISOTOP, Module

![Product image](https://novapart.co/image/farnell:2807242/)

**URL**: https://novapart.co/products/STE88N65M5/power-mosfet-n-channel-650-v-88-a-0024-ohm-isotop
**SKU**: STE88N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €26.2800
**Stock**: 25+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | MDmesh V |
| Power Dissipation | 494W |
| Transistor Mounting | Module |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 494W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.024ohm |
| Transistor Case Style | ISOTOP |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 88A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807242/)

## **STE88N65M5** 

## N-channel 650 V, 0.024 Ω typ., 88 A, MDmesh™ V Power MOSFET in a ISOTOP™ package 

**Datasheet** - **production data** 

## **Features** 

|**Order code**|**VDS@Tjmax **|**RDS(on) max**|**ID**|
|---|---|---|---|
|STE88N65M5|710 V|0.029Ω|88 A|



- Very low RDS(on) 

- Higher VDSS rating 

- Higher dv/dt capability 

**==> picture [43 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
ISOTOP [TM]<br>**----- End of picture text -----**<br>


- Excellent switching performance 

- 100% avalanche tested 

## **Applications** 

## **Figure 1.  Internal schematic diagram** 

- Switching applications 

## **Description** 

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which  is combined with STMicroelectronics’ well-known 

PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STE88N65M5|88N65M5|ISOTOP|Tube|



_www.st.com_ 

February 2014 

DocID025974 Rev 1 

1/14 

This is information on a product in full production. 

**Contents** 

**STE88N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|88|A|
|ID|Drain current (continuous) at TC= 100 °C|55.7|A|
|IDM<br>(1)|Drain current (pulsed)|352|A|
|PTOT|Total dissipation at TC= 25 °C|494|W|
|IAR|Max current during repetitive or single pulse avalanche<br>(pulse width limited by TJMAX)|15|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50V)|2000|mJ|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area. 

2. ISD ≤   88 A, di/dt = 400 A/μs, VDD = 400 V, VDS (peak) < V(BR)DSS. 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|0.253|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|30|°C/W|



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**STE88N65M5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|650|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 650 V|||1|μA|
|||VDS= 650 V, TC=125 °C|||100|μA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|3|4|5|V|
|RDS(on)|Static drain-source<br>on- resistance|VGS= 10 V, ID= 42 A||0.024|0.029|Ω|



**Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|8825|-|pF|
|Coss|Output capacitance||-|223|-|pF|
|Crss|Reverse transfer<br>capacitance||-|11|-|pF|
|Co(tr)<br>(1)|Equivalent<br>capacitance time<br>related|VGS= 0, VDS= 0 to 520 V|-|778|-|pF|
|Co(er)<br>(2)|Equivalent<br>capacitance energy<br>related|VGS= 0, VDS= 0 to 520 V|-|202|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|1.79|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 42 A,<br>VGS= 10 V<br>(see_Figure 16_)|-|204|-|nC|
|Qgs|Gate-source charge||-|51|-|nC|
|Qgd|Gate-drain charge||-|84|-|nC|



1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 

to 80% VDSS. 

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 

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**Electrical characteristics** 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(v)|Voltage delay time|VDD= 400 V, ID= 56 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_)<br>(see_Figure 20_)|-|141|-|ns|
|tr(v)|Voltage rise time||-|16|-|ns|
|tf(i)|Current fall time||-|29|-|ns|
|tc(off)|Crossing time||-|56|-|ns|



**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||88|A|
|ISDM (1)|Source-drain current (pulsed)||-||352|A|
|VSD (2)|Forward on voltage|ISD= 88 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 84 A, di/dt = 100 A/μs<br>VDD= 100 V (see_Figure 17_)|-|544||ns|
|Qrr|Reverse recovery charge||-|14||μC|
|IRRM|Reverse recovery current||-|50||A|
|trr|Reverse recovery time|ISD= 84 A, di/dt = 100 A/μs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 17_)|-|660||ns|
|Qrr|Reverse recovery charge||-|20||μC|
|IRRM|Reverse recovery current||-|60||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18113v1<br>(A)<br>100 10µs<br>100µs<br>10 1ms<br>10ms<br>1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>Operation in this area is<br>Limited by max RDS(on)<br>**----- End of picture text -----**<br>


**==> picture [173 x 167] intentionally omitted <==**

**Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM10393v1<br>(A)<br>250 VGS=10V<br>8V<br>200<br>150<br>7V<br>100<br>50<br>6V<br>0<br>0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM10394v1<br>ID (A)<br>VDS=30V<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 7. Static drain-source on-resistance** 

## **Figure 6. Normalized V(BR)DSS vs temperature** 

**==> picture [462 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM10399v1 RDS(on) AM10396v1<br>(norm) (Ω)<br>VGS=10V<br>1.08<br>ID = 1mA<br>1.06<br>0.026<br>1.04<br>1.02<br>0.024<br>1.00<br>0.98<br>0.022<br>0.96<br>0.94<br>0.92 0.020<br>-50 -25 0 25 50 75 100 TJ(°C) 0 10 20 30 40 50 60 70 80 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

## **Figure 9. Capacitance variations** 

**==> picture [462 x 597] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM10395v1 C AM10397v1<br>VDS (V)<br>(V) (pF)<br>VDD=520V<br>14<br>VDS ID=42A 500 100000<br>12<br>400 10000 Ciss<br>10<br>8 300 1000<br>6 Coss<br>200 100<br>4<br>100 10 Crss<br>2<br>0 0 1<br>0 50 100 150 200 Qg(nC) 0.1 1 10 100 VDS(V)<br>Figure 10. Normalized gate threshold voltage vs  Figure 11. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM08899v1 RDS(on) AM05501v2<br>(norm) (norm)<br>1.10 2.1<br>ID= 250µA ID= 42 A<br>1.9<br>VGS= 10 V<br>1.00 1.7<br>1.5<br>0.90 1.3<br>1.1<br>0.80 0.9<br>0.7<br>0.70 0.5<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)<br>Figure 12.  Source-drain diode forward  Figure 13. Output capacitance stored energy<br>characteristics<br>VSD AM04974v1 Eoss AM10398v1<br>(V) TJ=-50°C (µJ)<br>40<br>1.2<br>35<br>1.0<br>30<br>0.8 25<br>TJ=25°C<br>20<br>0.6<br>TJ=150°C 15<br>0.4<br>10<br>0.2<br>5<br>0 0<br>0 10 20 30 40 50 ISD(A) 0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Switching losses vs gate resistance[(1)]** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM11171v1<br>E(μJ)<br>VDD=400V Eon<br>VGS=10V<br>TJ=25°C<br>3000 ID=56A<br>2000 Eoff<br>1000<br>0<br>0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


1. Eon including reverse recovery of a SiC diode. 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [464 x 563] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Switching times test circuit for  Figure 16. Gate charge test circuit<br>resistive load<br>VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>ATH et<br>Figure 17. Test circuit for inductive load  Figure 18. Unclamped inductive load test circuit<br>switching and diode recovery times<br>L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>einen<br>Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform<br>V(BR)DSS id i* i: tH ie } ; Concept waveform for Inductive Load Turn-of f<br>VD<br>90%Vds i : ii i 90%Id<br>T delay-off i i i<br>IDM<br>— Vgs : i uy i<br>FEEa<br>ID<br>vost) =} \E ii :<br>VDD VDD 10%Vds i i ti ‘ 10%Id<br>Vds : H i<br>i i Trise i} Tall |<br>AM01472v1 Teross -over AMos540v2<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **Figure 21.  ISOTOP drawing** 

**==> picture [405 x 523] intentionally omitted <==**

**----- Start of picture text -----**<br>
0041565_Rev_I<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8.  ISOTOP mechanical data** 

||**Table 8.  ISOTOP mechanical data**|**Table 8.  ISOTOP mechanical data**|**Table 8.  ISOTOP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|11.80||12.20|
|A1|8.90||9.10|
|B|7.80||8.20|
|C|0.75||0.85|
|C2|1.95||2.05|
|D|37.80||38.20|
|D1|31.50||31.70|
|E|25.15||25.50|
|E1|23.85||24.15|
|E2||24.80||
|G|14.90||15.10|
|G1|12.60||12.80|
|G2|3.50||4.30|
|F|4.10||4.30|
|F1|4.60||5|
|φP|4||4.30|
|P1|4||4.40|
|S|30.10||30.30|



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**Revision history** 

## **5 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Feb-2014|1|Initial release.|



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