# Power MOSFET, N Channel, 500 V, 30 A, 0.045 ohm, ISOTOP, Module

![Product image](https://novapart.co/image/farnell:1752065/)

**URL**: https://novapart.co/products/STE70NM50/power-mosfet-n-channel-500-v-30-a-0045-ohm-isotop
**SKU**: STE70NM50
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €27.3700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Power Dissipation | 600W |
| Transistor Mounting | Module |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 600W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.045ohm |
| Transistor Case Style | ISOTOP |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752065/)

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## **STE70NM50** 

## N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STE70NM50|500V|< 0.05Ω|70 A|



- n TYPICAL RDS(on) = 0.045Ω 

- n HIGH dv/dt AND AVALANCHE CAPABILITIES 

- n IMPROVED ESD CAPABILITY 

- n LOW INPUT CAPACITANCE AND GATE CHARGE 

- n LOW GATE INPUT RESISTANCE 

- n TIGHT PROCESS CONTROL 

- n INDUSTRY’S LOWEST ON-RESISTANCE 

## **DESCRIPTION** 

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 

## **APPLICATIONS** 

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. 

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ISOTOP<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

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## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source Voltage (VGS= 0)|500|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|500|V|
|VGS|Gate- source Voltage|±30|V|
|ID|Drain Current (continuous) at TC= 25°C|70|A|
|ID|Drain Current (continuous) at TC= 100°C|44|A|
|IDM(l)|Drain Current (pulsed)|280|A|
|PTOT|Total Dissipation at TC= 25°C|600|W|
|VESD(G-S)|Gate source ESD(HBM-C=100pF, R=15KΩ)|6|KV|
||Derating Factor|5|W/°C|
|dv/dt (1)|Peak Diode Recovery voltage slope|15|V/ns|
|Tstg|Storage Temperature|–65 to 150|°C|
|Tj|Max. Operating Junction Temperature|150|°C|



(•)Pulse width limited by safe operating area September 2002 

(1)ISD ≤60A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 

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**STE70NM50** 

## **THERMAL DATA** 

|Rthj-case|Thermal Resistance Junction-case                       Max|0.2|0.2|°C/W|
|---|---|---|---|---|
|Rthj-amb<br>Tl|Thermal Resistance Junction-ambient                  Max<br>Maximum Lead Temperature For Soldering Purpose|30<br>300||°C/W<br>°C|
|**AVALANCHE CHARACTERISTICS**|||||
|**Symbol**|**Parameter**||**Max Value**|**Unit**|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)||30|A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 35 V)||1.4|J|



## **ELECTRICAL CHARACTERISTICS** (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF 

|<br>OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|500|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||10<br>100|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20V|||± 10|µA|
|ON (1)|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 30A||0.045|0.05|Ω|
|DYNAMIC|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(1)|Forward Transconductance|VDS> ID(on)x RDS(on)max,<br>ID= 30A||35||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||7500<br>980<br>200||pF<br>pF<br>pF|
|RG|Gate Input Resistance|f=1 MHz Gate DC Bias = 0<br>Test Signal Level = 20mV<br>Open Drain||1.5||Ω|



Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

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**STE70NM50** 

## **ELECTRICAL CHARACTERISTICS** (CONTINUED) SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VDD= 250V, ID= 30A<br>RG= 4.7ΩVGS= 10V<br>(see test circuit, Figure 3)||51<br>58||ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 400V, ID= 60A,<br>VGS= 10V||190<br>53<br>97|266|nC<br>nC<br>nC|
|SWITCHING OFF|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|tr(Voff)<br>tf<br>tc|Off-voltage Rise Time<br>Fall Time<br>Cross-over Time|VDD= 400V, ID= 60A,<br>RG= 4.7Ω,VGS= 10V<br>(see test circuit, Figure 5)||51<br>46<br>108||ns<br>ns<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||60<br>240|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 60A, VGS= 0|||1.5|V|
|trr<br>Qrr<br>Irrm|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 60A, di/dt = 100A/µs,<br>VDD= 100 V, Tj= 25°C<br>(see test circuit, Figure 5)||532<br>9.9<br>37||ns<br>µC<br>A|
|trr<br>Qrr<br>Irrm|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 60A, di/dt = 100A/µs,<br>VDD= 100 V, Tj= 150°C<br>(see test circuit, Figure 5)||636<br>13.4<br>42||ns<br>µC<br>A|



Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 

## **GATE-SOURCE ZENER DIODE** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO|Gate-Source Breakdown<br>Voltage|Igs=± 1mA (Open Drain)|30|||V|



## **PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES** 

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**STE70NM50** 

## **Safe Operating Area** 

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## **Output Characteristics** 

**Transconductance** 

## **Thermal Impedance** 

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## **Transfer Characteristics** 

**Static Drain-source On Resistance** 

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**STE70NM50** 

## **Gate Charge vs Gate-source Voltage** 

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## **Normalized Gate Threshold Voltage vs Temp.** 

## **Capacitance Variations** 

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**Normalized On Resistance vs Temperature** 

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**Source-drain Diode Forward Characteristics** 

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**STE70NM50** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

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**Fig. 3:** Switching Times Test Circuit For Resistive Load 

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**Fig. 2:** Unclamped Inductive Waveform 

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**Fig. 4:** Gate Charge test Circuit 

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**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

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**STE70NM50** 

## **ISOTOP MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|11.8||12.2|0.466||0.480|
|B|8.9||9.1|0.350||0.358|
|C|1.95||2.05|0.076||0.080|
|D|0.75||0.85|0.029||0.033|
|E|12.6||12.8|0.496||0.503|
|F|25.15||25.5|0.990||1.003|
|G|31.5||31.7|1.240||1.248|
|H|4|||0.157|||
|J|4.1||4.3|0.161||0.169|
|K|14.9||15.1|0.586||0.594|
|L|30.1||30.3|1.185||1.193|
|M|37.8||38.2|1.488||1.503|
|N|4|||0.157|||
|O|7.8||8.2|0.307||0.322|



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**STE70NM50** 

**Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.** 

**© The ST logo is a registered trademark of STMicroelectronics** 

**© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES** 

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**© http://www.st.com** 

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/ste70nm50/mosfet-n-ch-500v-70a-isotop/dp/1752065)
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