# Power MOSFET, N Channel, 400 V, 6 A, 0.59 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/STD9N40M2/power-mosfet-n-channel-400-v-6-a-059-ohm-to-252
**SKU**: STD9N40M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2930
**Stock**: 10+
**Lead Time**: 98 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.59ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 400V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.59ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2729659RL/)
**STD9N40M2**
Datasheet
N-channel 400 V, 0.59 Ω typ., 6 A MDmesh™ M2 Power MOSFET in a DPAK package
## **Features**
**==> picture [55 x 50] intentionally omitted <==**
**----- Start of picture text -----**
TAB
2 3
&.
1
DPAK
**----- End of picture text -----**
|**Order code**|**VDS @ TJmax**|**RDS(on)max.**|**ID**|
|---|---|---|---|
|STD9N40M2|450 V|0.8 Ω|6 A|
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
**==> picture [117 x 100] intentionally omitted <==**
**----- Start of picture text -----**
D (2 , TAB)
G ( 1 )
S ( 3 ) AM15572V1
**----- End of picture text -----**
- Zener-protected
## **Applications**
- Switching applications
## **Description**
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
## **Product status** ~~ea~~
|**Product summary**
~~Saas~~|**Product summary**
~~Saas~~|
|---|---|
|**Order code**|STD9N40M2|
|**Marking**|9N40M2|
|**Package**|DPAK|
|**Packing**|Tape and reel|
**DS10114** - **Rev 3** - **August 2018** For further information contact your local STMicroelectronics sales office.
www.st.com
**STD9N40M2 Electrical ratings**
**1**
## **Electrical ratings**
**Table 1. Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|400|V|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|6|A|
|ID|Drain current (continuous) at TC= 100 °C|3.8|A|
|IDM (1)|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at TC= 25 °C|60|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tj|Operating junction temperature range|-55 to 150|°C|
|Tstg|Storage temperature range|||
_1. Pulse width limited by safe operating area._
_2. ISD ≤ 6 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 320 V._
_3. VDS ≤ 320 V._
## **Table 2. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|2.08|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50|°C/W|
_1. When mounted on 1 inch² FR-4, 2 Oz copper board._
**Table 3. Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)|2.5|A|
|EAS|Single pulse avalanche energy
(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|148|mJ|
**DS10114** - **Rev 3**
**page 2/18**
**STD9N40M2 Electrical characteristics**
**2 Electrical characteristics**
(TCASE = 25 °C unless otherwise specified)
**Table 4. On/off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0 V|400|||V|
|IDSS|Zero gate voltage drain
current|VDS= 400 V, VGS= 0 V|||1|µA|
|||VDS= 400 V, VGS= 0 V, TC= 125 °C
(1)|||100|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 3 A||0.59|0.8|Ω|
_1. Defined by design, not subject to production test._
**Table 5. Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|270|-|pF|
|Coss|Output capacitance|||22|||
|Crss|Reverse transfer capacitance|||0.7|||
|Coss eq.(1)|Equivalent output
capacitance|VGS= 0 V, VDS= 0 to 320 V|-|94|-|pF|
|Rg|Gate input resistance|f = 1 MHz open drain|-|7.1|-|Ω|
|Qg|Total gate charge|VDD= 320 V, ID= 6 A,
VGS= 0 to 10 V(seeFigure 14. Test
circuit for gate charge behavior)|-|8.8|-|nC|
|Qgs|Gate-source charge|||1.7|||
|Qgd|Gate-drain charge|||4.8|||
_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._
**Table 6. Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 200 V, ID= 3 A,
RG= 4.7 Ω, VGS= 10 V
(seeFigure 13. Test circuit for
resistive load switching timesand
Figure 18. Switching time waveform)|-|10.5|-|ns|
|tr|Rise time|||9|||
|td(off)|Turn-off delay time|||7.5|||
|tf|Fall time|||21|||
**DS10114** - **Rev 3**
**page 3/18**
**STD9N40M2 Electrical characteristics**
## **Table 7. Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||6|A|
|ISDM (1)|Source-drain current (pulsed)||||24||
|VSD (2)|Forward on voltage|ISD= 6 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 6 A, di/dt = 100 A/µs
VDD= 60 V (seeFigure 15. Test
circuit for inductive load switching and
diode recovery times)|-|208||ns|
|Qrr|Reverse recovery charge|||1.2||μC|
|IRRM|Reverse recovery current|||11.5||A|
|trr|Reverse recovery time|ISD= 6 A, di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C (seeFigure
15. Test circuit for inductive load
switching and diode recovery times)|-|264||ns|
|Qrr|Reverse recovery charge|||1.6||μC|
|IRRM|Reverse recovery current|||12.5||A|
_1. Pulse width limited by safe operating area._
_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._
**DS10114** - **Rev 3**
**page 4/18**
**STD9N40M2 Electrical characteristics curves**
## **2.1 Electrical characteristics curves**
**Figure 2. Thermal impedance**
**Figure 1. Safe operating area**
**==> picture [167 x 141] intentionally omitted <==**
**----- Start of picture text -----**
ID GIPG050620141120SA
(A)
10 10µs
100µs
1
1ms
Tj=150°C 10ms
Tc=25 ° C
Single pulse
0.1
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**Figure 3. Output characterisics**
**==> picture [166 x 142] intentionally omitted <==**
**----- Start of picture text -----**
GIPG050620141141SA
ID(A)
VGS=8, 9, 10V
7V
10
6V
8
6 5V
4
2
4V
0
0 4 8 12 16 VDS(V)
**----- End of picture text -----**
**Figure 5. Gate charge vs gate-source voltage**
**==> picture [163 x 141] intentionally omitted <==**
**----- Start of picture text -----**
VGS GIPG050620141149SAVDS
(V) (V)
12 VDS VDDID=320V=6A 300
10 250
8 200
6 150
4 100
2 50
0 0
0 2 4 6 8 Qg(nC)
**----- End of picture text -----**
**==> picture [155 x 157] intentionally omitted <==**
**Figure 4. Transfer characteristics**
**==> picture [159 x 142] intentionally omitted <==**
**----- Start of picture text -----**
GIPG050620141144SA
ID
(A)
VDS=14V
10
8
6
4
2
0
0 2 4 6 8 10 VGS(V)
**----- End of picture text -----**
**Figure 6. Static drain-source on-resistance**
**==> picture [170 x 141] intentionally omitted <==**
**----- Start of picture text -----**
RDS(on) GIPG050620141203SA
(Ω)
VGS=10V
0.62
0.61
0.60
0.59
0.58
0.57
1 2 3 4 5 ID(A)
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 5/18**
**STD9N40M2 Electrical characteristics curves**
**Figure 7. Capacitance variations**
**==> picture [166 x 142] intentionally omitted <==**
**----- Start of picture text -----**
C GIPG050620141211SA
(pF)
1000
Ciss
100
Coss
10
1
Crss
0.1
0.1 1 10 100 VDS(V)
**----- End of picture text -----**
**Figure 9. Normalized gate threshold voltage vs temperature**
**==> picture [167 x 142] intentionally omitted <==**
**----- Start of picture text -----**
VGS(th) GIPG090620140915SA
(norm)
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
**Figure 11. Normalized V(BR)DSS vs temperature**
**==> picture [174 x 142] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS GIPG090620141002SA
(norm)
ID=1mA
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
**Figure 8. Output capacitance stored energy**
**==> picture [162 x 142] intentionally omitted <==**
**----- Start of picture text -----**
Eoss GIPG090620140910SA
(µJ)
1.2
0.8
0.4
0
0 100 200 300 VDS(V)
**----- End of picture text -----**
**Figure 10. Normalized on-resistance vs temperature**
**==> picture [171 x 141] intentionally omitted <==**
**----- Start of picture text -----**
RDS(on) GIPG090620140921SA
(norm)
VGS=10V
2.2
1.8
1.4
1
0.6
0.2
-75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
**Figure 12. Source-drain diode forward characteristics**
**==> picture [168 x 141] intentionally omitted <==**
**----- Start of picture text -----**
GIPG090620141010SA
VSD(V)
TJ=-50°C
1
0.9 TJ=25°C
0.8
0.7 TJ=150°C
0.6
0.5
1 2 3 4 5 ISD(A)
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 6/18**
**STD9N40M2 Test circuits**
**3 Test circuits**
**==> picture [513 x 173] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior
VDD
12 V 47 kΩ
1 kΩ
100 nF
RL 2200 3.3
+ μF μF VDD
VD VGS IG= CONST 100 Ω D.U.T.
VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG
pulse width μF
47 kΩ
1 kΩ
AM01468v1 AM01469v1
**----- End of picture text -----**
**==> picture [513 x 184] intentionally omitted <==**
**----- Start of picture text -----**
Figure 15. Test circuit for inductive load switching and
Figure 16. Unclamped inductive load test circuit
diode recovery times
A A A L
G D D.U.T. fastdiode 100 µH VD 2200 3.3
25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD
G D.U.T.
+ RG S Vi D.U.T.
_ pulse width
AM01471v1
AM01470v1
**----- End of picture text -----**
**==> picture [513 x 172] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD
90% 90%
IDM
ID 0 10% VDS 10%
VDD VDD VGS 90%
AM01472v1 0 10%
AM01473v1
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 7/18**
**STD9N40M2 Package information**
**4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark.
**DS10114** - **Rev 3**
**page 8/18**
**STD9N40M2 DPAK (TO-252) type A package information**
## **4.1 DPAK (TO-252) type A package information**
**Figure 19. DPAK (TO-252) type A package outline**
**==> picture [34 x 40] intentionally omitted <==**
**==> picture [57 x 9] intentionally omitted <==**
**----- Start of picture text -----**
0068772_A_25
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 9/18**
**STD9N40M2 DPAK (TO-252) type A package information**
**Table 8. DPAK (TO-252) type A mechanical data**
|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|
**DS10114** - **Rev 3**
**page 10/18**
**STD9N40M2 DPAK (TO-252) type C package information**
## **4.2 DPAK (TO-252) type C package information**
**Figure 20. DPAK (TO-252) type C package outline**
**==> picture [36 x 6] intentionally omitted <==**
**----- Start of picture text -----**
0068772_C_25
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 11/18**
**STD9N40M2 DPAK (TO-252) type C package information**
**Table 9. DPAK (TO-252) type C mechanical data**
|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.25|||
|E|6.50|6.60|6.70|
|E1|4.70|||
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|
**DS10114** - **Rev 3**
**page 12/18**
**STD9N40M2 DPAK (TO-252) type C package information**
**Figure 21. DPAK (TO-252) recommended footprint (dimensions are in mm)**
**==> picture [102 x 181] intentionally omitted <==**
FP_0068772_25_C
**DS10114** - **Rev 3**
**page 13/18**
**STD9N40M2 DPAK (TO-252) packing information** ~~To~~
## **4.3**
## **DPAK (TO-252) packing information**
## **Figure 22. DPAK (TO-252) tape outline**
**==> picture [398 x 316] intentionally omitted <==**
**----- Start of picture text -----**
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
E
F
B1 J) K0 B0 paeg e s W
I
f f PEREllos oe oes:
For machine ref. only A0 P1 D1
including draft and
radii concentric around B0
User direction of feed
R
—— Bending radius
User direction of feed
AM08852v1
**----- End of picture text -----**
**DS10114** - **Rev 3**
**page 14/18**
**STD9N40M2 DPAK (TO-252) packing information**
**Figure 23. DPAK (TO-252) reel outline**
**==> picture [363 x 208] intentionally omitted <==**
**----- Start of picture text -----**
T
40mm min.
access hole
at slot location
B
D
C
N
A
Tape slot G measured
in core for at hub
Full radius tape start
2.5mm min.width
**----- End of picture text -----**
AM06038v1
**Table 10. DPAK (TO-252) tape and reel mechanical data**
||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||
**DS10114** - **Rev 3**
**page 15/18**
**STD9N40M2**
## **Revision history**
**Table 11. Document revision history**
|**Date**|**Version**|**Changes**|
|---|---|---|
|09-Jan-2014|1|First release.|
|18-Jun-2014|2|– Modified: title
– Modified: values in_Table 4_
– Modified: RDS(on)and IDSS(test conditions) in_Table 5_
– Modified: the entire typical values in_Table 6_,_7_and_8_
– Added:_Table 8_
– Added:_Section 2.1: Electrical characteristics (curves)_
– Updated:_Section 4: Package mechanical data_
– Minor text changes|
|20-Aug-2018|3|The document status is production data.
AddedSection 4.2 DPAK (TO-252) type C package information.
Minor text changes.|
**DS10114** - **Rev 3**
**page 16/18**
**STD9N40M2 Contents**
## **Contents**
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**|DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**4.3**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16**|
**DS10114** - **Rev 3**
**page 17/18**
**STD9N40M2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
**DS10114** - **Rev 3**
**page 18/18**
## Links
- [View this product on Novapart](https://novapart.co/products/STD9N40M2/power-mosfet-n-channel-400-v-6-a-059-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std9n40m2/power-mosfet-n-channel-6a-to-252/dp/2729659RL)
---
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> distributors in Europe and Asia. Unlike standard online stores, Novapart
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> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.