# Power MOSFET, N Channel, 250 V, 8 A, 0.318 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807194/)

**URL**: https://novapart.co/products/STD8NF25/power-mosfet-n-channel-250-v-8-a-0318-ohm-to-252
**SKU**: STD8NF25
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2580
**Stock**: 10+
**Lead Time**: 35 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.318ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II |
| Qualification | - |
| Power Dissipation | 72W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.318ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807194/)

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## **STD8NF25** 

## N-channel 250 V, 318 mΩ, 8 A STripFET™ II Power MOSFET in DPAK package 

## **Datasheet — production data** 

## **Features** 

|**Features**||||
|---|---|---|---|
|**Order code**|**VDSS**|**RDS(on)**<br>**max.**|**ID**|
|STD8NF25|250 V|< 420 mΩ|8 A|



- 100% avalanche tested 

- 175 °C junction temperature 

## **Applications** 

**==> picture [69 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK<br>**----- End of picture text -----**<br>


- Switching applications 

   - Automotive 

## **Description** 

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD8NF25|8NF25|DPAK|Tape and reel|



_www.st.com_ 

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This is information on a product in full production. 

**Contents** 

**STD8NF25** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|250|V|
|VGS|Gate-source voltage|±20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|8|A|
||Drain current (continuous) at TC=100 °C|6|A|
|IDM<br>(2)|Drain current (pulsed)|32|A|
|PTOT|Total dissipation at TC= 25 °C|72|W|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 175|°C|



1. The value is rated according to Rthj-c. 

2. Pulse is rated according to SOA. 

|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case|2.08|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb|50||



1. When mounted on 1inch² FR-4, 2 Oz copper board. 

## **Table 4. Avalanche data** 

|**Table 4.**|**Avalanche data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAV|Non-repetitive avalanche current|8|A|
|EAS|Single pulse avalanche energy (starting<br>TJ=25 °C, ID=IAV, VDD=50 V)|110|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified). 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0|250|-||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 250 V<br>VDS= 250 V, Tc=125 °C||-|1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V||-|±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|-|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 8 A||318|420|mΩ|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f=1 MHz, VGS=0|-|500<br>90<br>15|-|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 200 V, ID= 8 A<br>VGS=10 V<br>(see_Figure 14_)|-|16<br>3.5<br>8|-|nC<br>nC<br>nC|



## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=125 V, ID=4 A,<br>RG=4.7Ω,VGS=10 V<br>(see_Figure 13_and<br>_Figure 18_)|-|13<br>10<br>26<br>6|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time||-||-|ns<br>ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM|Source-drain current<br>Source-drain current<br>(pulsed)||-||8<br>32|A<br>A|
|VSD|Forward on voltage|ISD=8 A, VGS=0 V|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 50 V<br>(see_Figure 15_)|-|115<br>470<br>8.5||ns<br>nC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 50 V, TJ= 150 °C<br>(see_Figure 15_)|-|130<br>580<br>9.5||ns<br>nC<br>A|



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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

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**----- Start of picture text -----**<br>
ID AM11280v1<br>(A) Tj=175°C<br>Tc=25°C<br>Single pulse<br>10 10µs<br>100µs<br>1 1ms<br>10ms<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

**Figure 3. Thermal impedance** 

**==> picture [177 x 169] intentionally omitted <==**

## **Figure 5. Transfer characteristics** 

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**----- Start of picture text -----**<br>
AM11281v1 AM11282v1<br>ID ID<br>(A) VGS=10V (A)<br>VDS=25V<br>20 20<br>6V<br>15 15<br>10 10<br>5 5<br>4V<br>0 0<br>0 5 10 15 20 25 VDS(V) 0 2 4 6 8 10 VGS(V)<br>Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance<br>BVDSS AM11283v1 RDS(on) AM11284v1<br>(norm) ID=1mA (Ω)<br>VGS=10V<br>1.2<br>0.35<br>1.0<br>0.30<br>0.8<br>0.25<br>0.6<br>0.20<br>0.4<br>0.2 0.15<br>0 0.10<br>-100 -50 0 50 100 150 TJ(°C) 0 1 2 3 4 5 6 7 8 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**----- Start of picture text -----**<br>
VGS AM11285v1 C AM11286v1<br>VDS<br>(V) VDD=200V (V) (pF)<br>ID=8A<br>12<br>VDS 200<br>1000<br>10 Ciss<br>150<br>8<br>100<br>6 Coss<br>100<br>4<br>10 Crss<br>50<br>2<br>0 0 1<br>0 4 8 12 16 Qg(nC) 0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

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**----- Start of picture text -----**<br>
VGS(th) AM11287v1<br>(norm)<br>ID=250µA<br>1.0<br>0.8<br>0.6<br>0.4<br>-100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
RDS(on) AM11288v1<br>(norm) ID=8A<br>VGS=10V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>-100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 12. Source-drain diode forward characteristics** 

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**----- Start of picture text -----**<br>
VSD AM11289v1<br>(V) TJ=25°C<br>0.9<br>TJ=-50°C<br>0.8<br>0.7<br>TJ=175°C<br>0.6<br>0.5<br>0.4<br>0 2 4 6 8 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

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**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 15. Test circuit for inductive load  Figure 16. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**Table 9. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1||1.50|
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 19. DPAK (TO-252) drawing** 

**==> picture [405 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_H<br>**----- End of picture text -----**<br>


## **Figure 20. DPAK footprint[(a)]** 

**==> picture [405 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters. 

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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Packaging mechanical data** 

## **Figure 21. Tape for DPAK (TO-252)** 

**==> picture [390 x 297] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>“ t |e O00 %8— 000 8 " 00 E<br>F<br>K0 W<br>B1 B0<br>on ® ||] @ ||| @ | || @<br>| ‘l Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 $<<br>User direction of feed<br>R<br>\ e $ ¢/¢ $/4 $] / 4 % $| /% ]/4% $F<br>es ererere es es Se ee aaa Ss Sn Sn 5<br>——$<—— Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


**==> picture [39 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08852v1<br>**----- End of picture text -----**<br>


**==> picture [403 x 261] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. Reel for DPAK (TO-252)<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|26-Apr-2012|1|First release.|



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## Links

- [View this product on Novapart](https://novapart.co/products/STD8NF25/power-mosfet-n-channel-250-v-8-a-0318-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std8nf25/mosfet-n-ch-250v-8a-to-252/dp/2807194)
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