# Power MOSFET, N Channel, 650 V, 7 A, 0.56 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2098188/)

**URL**: https://novapart.co/products/STD8N65M5/power-mosfet-n-channel-650-v-7-a-056-ohm-to-252
**SKU**: STD8N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9570
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.56ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098188/)

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## **STB8N65M5, STD8N65M5, STF8N65M5, STI8N65M5, STP8N65M5, STU8N65M5** 

N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages 

## **Datasheet — production data** 

## **Features** 

|**Type**|**VDSS@ **<br>**TJmax**|**RDS(on)**<br>**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB8N65M5<br>STD8N65M5<br>STF8N65M5<br>STI8N65M5<br>STP8N65M5<br>STU8N65M5|710 V|< 0.6Ω|7 A|70 W<br>70 W<br>25 W<br>70 W<br>70 W<br>70 W|



- Worldwide best R * area DS(on) 

- Higher VDSS rating 

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**----- Start of picture text -----**<br>
TAB<br>TAB<br>3<br>1<br>3 3<br>1 2 DPAK 1 2<br>TO-220FP TO-220<br>TAB TAB<br>TAB<br>3 3<br>1 [2] [3] 1 1 2<br>D²PAK<br>I²PAK IPAK<br>**----- End of picture text -----**<br>


- High dv/dt capability 

- Excellent switching performance 

- Easy to drive 

- 100% avalanche tested 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which  is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB8N65M5<br>STD8N65M5<br>STF8N65M5<br>STI8N65M5<br>STP8N65M5<br>STU8N65M5|8N65M5|D²PAK<br>DPAK<br>TO-220FP<br>I²PAK<br>TO-220<br>IPAK|Tape and reel<br>Tape and reel<br>Tube<br>Tube<br>Tube<br>Tube|



October 2012 

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Doc ID 16531 Rev 5 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**<br>**D²PAK**<br>**I²PAK**|**IPAK**<br>**DPAK,**|**TO-220FP**||
|VGS|Gate- source voltage|± 25|||V|
|ID|Drain current (continuous) at TC= 25 °C|7||7(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|4.4||4.4(1)|A|
|IDM<br>(2)|Drain current (pulsed)|28||28(1)|A|
|PTOT|Total dissipation at TC= 25 °C|70||25|W|
|IAR|Max current during repetitive or single pulse<br>avalanche (pulse width limited by TJMAX)|2|||A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50V)|120|||mJ|
|dv/dt(3)|Peak diode recovery voltage slope|15|||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)|||2500|V|
|Tstg|Storage temperature|-55 to 150|||°C|
|Tj|Max. operating junction temperature|150|||°C|



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD ≤ 400 V, VDS(peak) < V(BR)DSS. 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||||**Unit**|
|||**DPAK**|**IPAK**|**TO-220**|**I²PAK**|**D²PAK**|**TO-220FP**||
|Rthj-case|Thermal resistance<br>junction-case max|1.79|||||5|°C/W|
|Rthj-amb|Thermal resistance<br>junction-ambient max||100|62.5|||62.5|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance<br>junction-pcb max|50||||30||°C/W|



1. When mounted on 1 inch² FR-4 board, 2oz Cu. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

## **Table 4. On /off states** 

|**Table 4.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|650|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 650 V<br>VDS= 650 V, TC=125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on|Static drain-source on-<br>resistance|VGS= 10 V, ID= 3.5 A||0.56|0.60|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|690<br>18<br>2|-|pF<br>pF<br>pF|
|Co(er)<br>(1)|Equivalent output<br>capacitance energy<br>related|VGS= 0, VDS= 0 to 520 V|-|17|-|pF|
|Co(tr)<br>(2)|Equivalent output<br>capacitance time<br>related|VGS= 0, VDS= 0 to 520 V|-|52|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|2|4|6|Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 520 V, ID= 3.5 A,<br>VGS= 10 V<br>(see_Figure 19_)|-|15<br>3.6<br>6|-|nC<br>nC<br>nC|



1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

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## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(off)<br>tr(V)<br>tc(off)<br>tf(i)|Turn-off delay time<br>Rise time<br>Cross time<br>Fall time|VDD= 400 V, ID= 4A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 20_)<br>(see_Figure 23_)|-|50<br>14<br>20<br>11|-|ns<br>ns<br>ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||7<br>28|A<br>A|
|VSD (2)|Forward on voltage|ISD= 7 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 7 A, di/dt = 100 A/µs<br>VDD= 100 V<br>(see_Figure 20_)|-|200<br>1.6<br>16||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 7 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 20_)|-|263<br>1.9<br>15||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area  for TO-220, Figure 3. Thermal impedance for TO-220, I²PAK, D²PAK I²PAK, D²PAK** 

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ID AM08194v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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**Figure 4. Safe operating area  for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK** 

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ID AM08195v1<br>(A)<br>10 10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP<br>ID AM08196v1<br>(A)<br>10<br>10µs<br>1<br>100µs<br>1ms<br>10ms<br>0.1<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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## **Figure 8. Output characteristics Figure 9. Transfer characteristics** 

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AM08197v1 AM08198v1<br>ID(A) ID(A)<br>12 VGS=10V 7.5V 12<br>VDS=20V<br>7V<br>10 10<br>6.5V<br>8 8<br>6 6<br>6V<br>4 4<br>2 2<br>5.5V<br>0 5V 0<br>0 5 10 15 VDS(V) 3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance** 

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**----- Start of picture text -----**<br>
VGS AM03195v1VDS<br>(V) (V)<br>VDS VDD=520V VGS<br>12 I D =3.5A 500<br>10<br>400<br>8<br>300<br>6<br>200<br>4<br>100<br>2<br>0 0<br>0 5 10 15 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 12. Capacitance variations** 

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C AM08202v1<br>(pF)<br>1000<br>Ciss<br>100<br>Coss<br>10<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08200v1<br>RDS(on)<br>(Ohm)<br>VGS=10V<br>0.58<br>0.56<br>0.54<br>0.52<br>0.50<br>0 2 4 6 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 13. Output capacitance stored energy** 

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**----- Start of picture text -----**<br>
Eoss AM08201v1<br>(µJ)<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature** 

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**----- Start of picture text -----**<br>
VGS(th) AM08204v1 RDS(on) AM08205v1<br>(norm) (norm)<br>VGS=10V<br>1.10 ID=250 µA ID=3.5A<br>2.0<br>1.00<br>1.5<br>0.90<br>1.0<br>0.80<br>0.70 0.5<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature (1)** 

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**----- Start of picture text -----**<br>
E AM08206v1 VDS AM10399v1<br>(μJ) (norm)<br>ID=4A<br>1.08<br>VCL=400V Eoff ID = 1mA<br>VGS=10V 1.06<br>100 1.04<br>Eon<br>1.02<br>1.00<br>10 0.98<br>0.96<br>0.94<br>1 0.92<br>0 10 20 30 40 RG(Ω) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


1. Eon including reverse recovery of a SiC diode 

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**Test circuits** 

## **3 Test circuits** 

**Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load** 

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**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform** 

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**----- Start of picture text -----**<br>
V(BR)DSS Id Concept waveform for Inductive Load Turn-off<br>VD<br>90%Vds 90%Id<br>Tdelay -off<br>IDM<br>Vgs<br>90%Vgs on<br>ID<br>Vgs(I(t ))<br>VDD VDD 10%Vds 10%Id<br>Vds<br>Trise Tfall<br>AM01472v1 Tcross - over AM05540v2<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical** 

**Table 8. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 24. D²PAK (TO-263) drawing** 

**==> picture [405 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>Figure 25. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical** 

**Table 9. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1|||
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

## **Figure 26. DPAK (TO-252) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_I<br>**----- End of picture text -----**<br>


## **Figure 27. DPAK footprint[(b)]** 

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**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


b. All dimensions are in millimeters. 

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**Package mechanical** 

**Table 10. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical data** 

## **Figure 28. TO-220FP drawing** 

**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


16/26 

Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical** 

## **Table 11. I²PAK (TO-262) mechanical data** 

|**Table 11.**|**I²PAK(TO-262) mechanical data**|**I²PAK(TO-262) mechanical data**|**I²PAK(TO-262) mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ**|**max.**|
|A|4.40||4.60|
|A1|2.40||2.72|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.49||0.70|
|c2|1.23||1.32|
|D|8.95||9.35|
|e|2.40||2.70|
|e1|4.95||5.15|
|E|10||10.40|
|L|13||14|
|L1|3.50||3.93|
|L2|1.27||1.40|



## **Figure 29. I²PAK (TO-262) drawing** 

**==> picture [34 x 35] intentionally omitted <==**

0004982_Rev_H 

Doc ID 16531 Rev 5 17/26 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical data** 

**Table 12. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical** 

**Figure 30. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


19/26 

Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical data** 

**Table 13. IPAK (TO-251) mechanical data** 

|**DIM**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**min.**|**typ.**|**max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



20/26 

Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Package mechanical** 

**Figure 31. IPAK (TO-251) drawing** 

**==> picture [405 x 456] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_J<br>**----- End of picture text -----**<br>


21/26 

Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 14. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



22/26 

Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Packaging mechanical** 

**Table 15. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



23/26 

Doc ID 16531 Rev 5 

**Packaging mechanical data STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

## **Figure 32. Tape for DPAK and D²PAK** 

**==> picture [341 x 298] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>000 00 000 6 00<br>F<br>K0 W<br>B0<br>A0 P1 D1<br>————_<br>User direction of feed<br>R<br>cn a ea ca l la :<br>erates<br>DDD a |<br>—_—_—_—_> Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


**==> picture [39 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08852v2<br>**----- End of picture text -----**<br>


## **Figure 33. Reel for DPAK and D²PAK** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


24/26 Doc ID 16531 Rev 5 ~~2~~ 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

**Revision history** 

## **6 Revision history** 

## **Table 16. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|23-Oct-2009|1|First release|
|14-Oct-2010|2|Document status promoted from preliminary data to datasheet.|
|05-Jul-2011|3|_Table 7: Source drain diode_has been updated.|
|04-Oct-2012|4|– Updated:_Figure 1_,_10_,_14_and_17_.<br>– Updated:note_1_and_3_below the_Table 2_<br>– Updated the entire_Section 4: Package mechanical data_.<br>– Updated title and description on the cover page.|
|29-Oct-2012|5|– Updated RGvalues in_Table 5_.|



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Doc ID 16531 Rev 5 

**STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5** 

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Doc ID 16531 Rev 5 



## Links

- [View this product on Novapart](https://novapart.co/products/STD8N65M5/power-mosfet-n-channel-650-v-7-a-056-ohm-to-252)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/std8n65m5/mosfet-n-ch-650v-7a-dpak/dp/2098188)
---

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