# Power MOSFET, N Channel, 600 V, 8 A, 0.55 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2729658/)

**URL**: https://novapart.co/products/STD8N60DM2/power-mosfet-n-channel-600-v-8-a-055-ohm-to-252
**SKU**: STD8N60DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4660
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 85W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.55ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2729658/)

**STD8N60DM2** 

Datasheet 

N-channel 600 V, 550 mΩ typ., 8 A, MDmesh™ DM2 Power MOSFET in a DPAK package 

## **Features** 

**==> picture [106 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>2 3<br>&.<br>1<br>DPAK<br>D(2, TAB)<br>G(1)<br>S(3) AM01475V1<br>**----- End of picture text -----**<br>


|**Order code**<br>~~SS~~|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD8N60DM2<br>~~SS~~|600 V|600 mΩ|8 A|85 W|



- Fast-recovery body diode 

- Extremely low gate charge and input capacitance 

- Low on-resistance 

- 100% avalanche tested 

- Extremely high dv/dt ruggedness 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. 

## **Product status link** ~~ea~~ 

STD8N60DM2 

|**Product summary**<br>~~See~~|**Product summary**<br>~~See~~|
|---|---|
|**Order code**|STD8N60DM2|
|**Marking**|8N60DM2|
|**Package**|DPAK|
|**Packing**|Tape and reel|



**DS11054** - **Rev 3** - **September 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD8N60DM2 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at Tcase= 25 °C|8|A|
||Drain current (continuous) at Tcase= 100 °C|5||
|IDM (1)|Drain current (pulsed)|32|A|
|PTOT|Total dissipation at Tcase= 25 °C|85|W|
|dv/dt(2)|Peak diode recovery voltage slope|50|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature range|–55 to 150|°C|
|Tj|Operating junction temperature range|||



_1. Pulse width is limited by safe operating area._ 

_2. ISD ≤ 8 A, di/dt = 900 A/μs, VDS peak < V(BR)DSS, VDD = 400 V_ 

_3. VDS ≤ 480 V_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.47|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50||



_1. When mounted on a 1-inch² FR-4, 2 Oz copper board._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR(1)|Avalanche current, repetitive or not repetitive|2.5|A|
|EAS(2)|Single pulse avalanche energy|430|mJ|



_1. Pulse width limited by Tjmax._ 

_2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V._ 

**DS11054** - **Rev 3** 

**page 2/17** 

**STD8N60DM2 Electrical characteristics** 

**2** 

## **Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

## **Table 4. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>Tcase= 125 °C(1)|||100||
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 4 A||550|600|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|449|-|pF|
|Coss|Output capacitance||-|24|-||
|Crss|Reverse transfer capacitance||-|0.89|-||
|Coss eq. (1)|Equivalent output capacitance|VDS= 0 to 480 V, VGS= 0 V|-|42|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|6.5|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 8 A,<br>VGS= 10 V<br>(seeFigure 14. Test circuit for gate<br>charge behavior)|-|13.5|-|nC|
|Qgs|Gate-source charge||-|3|-||
|Qgd|Gate-drain charge||-|7.7|-||



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

## **Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 4 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 13. Test circuit for<br>resistive load switching timesand<br>Figure 18. Switching time<br>waveform)|-|10|-|ns|
|tr|Rise time||-|6|-||
|td(off)|Turn-off delay time||-|25.4|-||
|tf|Fall time||-|9.5|-||



**DS11054** - **Rev 3** 

**page 3/17** 

**STD8N60DM2 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||8|A|
|ISDM (1)|Source-drain current (pulsed)||-||32|A|
|VSD (2)|Forward on voltage|VGS= 0 V, ISD= 8 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(seeFigure 15. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|80||ns|
|Qrr|Reverse recovery charge||-|188||nC|
|IRRM|Reverse recovery current||-|4.7||A|
|trr|Reverse recovery time|ISD= 8 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(seeFigure 15. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|160||ns|
|Qrr|Reverse recovery charge||-|640||nC|
|IRRM|Reverse recovery current||-|8||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS11054** - **Rev 3** 

**page 4/17** 

**STD8N60DM2 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Safe operating area** 

**==> picture [187 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GADG220720160851SOA<br>(A)<br>tp = 10µs<br>10  [1 ]<br>tp = 100µs<br>10  [0 ]<br>tp = 1ms<br>TT j c≤150 = 25 °° CC tp = 10ms<br>single pulse<br>10  [-1 ]<br>10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] 10  [3 ] VDS (V)<br>Operation in this area is<br>limited by R DS(on)<br>**----- End of picture text -----**<br>


**==> picture [158 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Thermal impedance<br>K GC20460<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br>


**==> picture [513 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Output characteristics Figure 4. Transfer characteristics<br>ID GADG260720160958OCH ID GADG260720160958TCH<br>(A)  VGS = 8, 9, 10 V (A)<br>VDS = 20 V<br>15 15<br>7 V<br>12 12<br>9 9<br>6 6<br>6 V<br>3 3<br>0 0<br>0 4 8 12 16 VDS (V) 0 2 4 6 8 VGS (V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on resistance<br>VGS GIPG260720161231QVG VDS RDS(on) GADG210720161757RON<br>(V)  (V)  (Ω)<br>12 VDD = 480 V 600 VGS = 10 V<br>ID = 8 A 0.58<br>10 VDS 500<br>0.57<br>8 400<br>0.56<br>6 300<br>0.55<br>4 200<br>0.54<br>2 100<br>0 0 0.53<br>0 3 6 9 12 15 Qg (nC) 0 2 4 6 8 Tj (°C)<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 5/17** 

**STD8N60DM2 Electrical characteristics (curves)** 

**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Normalized gate threshold voltage vs<br>Figure 7. Capacitance variations<br>temperature<br>C GADG210720161759CVR<br>(pF) VGS(th) GADG210720161803VTH<br>(norm.)<br>10 [3] 1.1 ID = 250 µA<br>CISS<br>10 [2] 1<br>10 [1] COSS 0.9<br>f= 1 MHz CRSS 0.8<br>10 [0]<br>0.7<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] VDS (V) 0.6<br>-75 -25 25 75 125 Tj (°C)<br>**----- End of picture text -----**<br>


**==> picture [513 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature<br>RDS(on) GADG210720161806RON V(BR)DSS GADG210720161808BDV<br>(norm.)  (norm.)<br>VGS = 10 V ID = 1 mA<br>2.2 1.08<br>1.8 1.04<br>1.4 1<br>1 0.96<br>0.6 0.92<br>0.2 0.88<br>-75 -25 25 75 125 Tj (°C) -75 -25 25 75 125 Tj (°C)<br>**----- End of picture text -----**<br>


**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Source-drain diode forward characteristics Figure 12. Output capacitance stored energy<br>VSD GADG210720161810SDF EOSS GADG210720161815EOS<br>(V)  (µJ)<br>Tj = -50 °C<br>1.1<br>3<br>1<br>Tj = 25 °C<br>0.9<br>2<br>0.8<br>Tj = 150 °C<br>0.7<br>1<br>0.6<br>0.5 0<br>0 2 4 6 8 ISD (A) 0 100 200 300 400 500 600 VDS (V)<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 6/17** 

**STD8N60DM2 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Test circuit for inductive load switching and<br>Figure 16. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. Switching time waveform<br>Figure 17. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 7/17** 

**STD8N60DM2 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS11054** - **Rev 3** 

**page 8/17** 

**STD8N60DM2 DPAK (TO-252) type A package information** 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 19. DPAK (TO-252) type A package outline** 

**==> picture [34 x 40] intentionally omitted <==**

**==> picture [57 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_A_25<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 9/17** 

**STD8N60DM2 DPAK (TO-252) type A package information** 

**Table 8. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS11054** - **Rev 3** 

**page 10/17** 

**STD8N60DM2 DPAK (TO-252) type E package information** 

- **4.2 DPAK (TO-252) type E package information** 

**Figure 20. DPAK (TO-252) type E package outline** 

**==> picture [81 x 73] intentionally omitted <==**

**==> picture [59 x 67] intentionally omitted <==**

**==> picture [81 x 73] intentionally omitted <==**

**==> picture [180 x 180] intentionally omitted <==**

0068772_type-E_rev.25 

**DS11054** - **Rev 3** 

**page 11/17** 

**STD8N60DM2 DPAK (TO-252) type E package information** 

**Table 9. DPAK (TO-252) type E mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 21. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [111 x 197] intentionally omitted <==**

**==> picture [37 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
FP_0068772_25<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 12/17** 

**STD8N60DM2 DPAK (TO-252) packing information** ~~To~~ 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 22. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS11054** - **Rev 3** 

**page 13/17** 

**STD8N60DM2 DPAK (TO-252) packing information** 

**Figure 23. DPAK (TO-252) reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS11054** - **Rev 3** 

**page 14/17** 

**STD8N60DM2** 

## **Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-May-2015|1|First release.|
|24-Nov-2016|2|Document status promoted from preliminary to production data.<br>Updated title in cover page,_Section 1: "Electrical ratings"_and_Section 2:_<br>_"Electrical characteristics"_.<br>Added_Section 2.1: "Electrical characteristics (curves)"_.|
|07-Sep-2018|3|Removed maturity status indication from cover page.<br>AddedSection 4.2 DPAK (TO-252) type E package information.<br>Minor text changes|



**DS11054** - **Rev 3** 

**page 15/17** 

**STD8N60DM2 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**|DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**4.3**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15**|



**DS11054** - **Rev 3** 

**page 16/17** 

**STD8N60DM2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS11054** - **Rev 3** 

**page 17/17** 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std8n60dm2/power-mosfet-n-channel-8a-to-252/dp/2729658)
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> Novapart is a B2B electronic component broker that sources across 500+ verified
> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.