# Power MOSFET, N Channel, 800 V, 6 A, 0.95 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/STD7N80K5/power-mosfet-n-channel-800-v-6-a-095-ohm-to-252
**SKU**: STD7N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7340
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power D
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.95ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2849652RL/)
**STD7N80K5, STP7N80K5,** >. augmented **STU7N80K5** N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - production data
## **Features**
|**Order code**|**VDS**|**RDS(on) max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD7N80K5|800 V|1.2 Ω|6 A|110 W|
|STP7N80K5|||||
|STU7N80K5|||||
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
**Figure 1: Internal schematic diagram**
- 100% avalanche tested
- Zener-protected
## **Applications**
- Switching applications
## **Description**
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD7N80K5|7N80K5|DPAK|Tape and reel|
|STP7N80K5||TO-220|Tube|
|STU7N80K5||IPAK||
May 2017
DocID023448 Rev 6
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This is information on a product in full production.
_www.st.com_
|**Contents**
**STD7N80K5, STP7N80K5, STU7N80K5**|**Contents**
**STD7N80K5, STP7N80K5, STU7N80K5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1
DPAK type A2 package information ................................................ 11|
||4.2
DPAK type C2 package information ................................................ 14|
||4.3
DPAK type E package information .................................................. 17|
||4.4
TO-220 package information ........................................................... 19|
||4.5
IPAK type A package information .................................................... 21|
||4.6
IPAK type C package information ................................................... 23|
|**5**|**Packing mechanical data .............................................................. 25**|
|**6**|**Revision history ............................................................................ 27**|
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**STD7N80K5, STP7N80K5, STU7N80K5**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|± 30|V|
|ID|Drain current (continuous) at TC= 25 °C|6|A|
|ID|Drain current (continuous) at TC= 100 °C|3.8|A|
|IDM_(1)_|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|IAR|Max current during repetitive or single pulse avalanche (pulse
width limited byTjmax)|2|A|
|EAS|Single pulse avalanche energy
(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|88|mJ|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|4.5|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tj|Operating junction temperature range|-55 to 150|°C|
|Tstg|Storage temperature range||°C|
## **Notes:**
(1)Pulse width limited by safe operating area.
(2)ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
(3)VDS ≤ 640 V
**Table 3: Thermal data**
|**Symbol**|**Parameter**||**Value**||**Unit**|
|---|---|---|---|---|---|
|||**DPAK**|**TO-220**|**IPAK**||
|Rthj-case|Thermal resistancejunction-case||1.14||°C/W|
|Rthj-amb|Thermal resistancejunction-amb||62.5|100|°C/W|
|Rthj-pcb_(1)_|Thermal resistance junction-pcb|50|||°C/W|
## **Notes:**
(1)When mounted on 1 inch² FR-4, 2 Oz copper board.
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**Electrical characteristics**
## **2 Electrical characteristics**
(TCASE = 25 °C unless otherwise specified).
**Table 4: On/off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V; ID= 1 mA|800|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V; VDS= 800 V|||1|µA|
|||VGS= 0 V; VDS= 800 V,
Tc=125 °C_(1)_|||50|µA|
|IGSS|Gate bodyleakage current|VDS= 0 V; VGS= ± 20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 3 A||0.95|1.2|Ω|
## **Notes:**
(1)Defined by design, not subject to production test.
**Table 5: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS=100 V, f=1 MHz, VGS=0 V|-|360|-|pF|
|Coss|Output capacitance||-|30|-|pF|
|Crss|Reverse transfer
capacitance||-|1|-|pF|
|Co(tr)_(1)_|Equivalent capacitance
time related|VGS= 0 V, VDS= 0 to 640 V|-|47|-|pF|
|Co(er)_(2)_|Equivalent capacitance
energy related||-|20|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID=0 A|-|6|-|Ω|
|Qg|Totalgate charge|VDD= 640 V, ID= 6 A
VGS= 0 to 10 V
(see_Figure 18: "Test circuit for_
_gate charge behavior"_)|-|13.4|-|nC|
|Qgs|Gate-source charge||-|3.7|-|nC|
|Qgd|Gate-drain charge||-|7.5|-|nC|
## **Notes:**
(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
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**STD7N80K5, STP7N80K5, STU7N80K5**
**Electrical characteristics**
**Table 6: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 400 V, ID= 3 A, RG=4.7 Ω,
VGS=10 V
(see_Figure 17: "Test circuit for_
_resistive load switching times"_
and_Figure 22: "Switching time_
_waveform"_|-|11.3|-|ns|
|tr|Rise time||-|8.3|-|ns|
|td(off)|Turn-off delaytime||-|23.7|-|ns|
|tf|Fall time||-|20.2|-|ns|
**Table 7: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||6|A|
|ISDM|Source-drain current
(pulsed)||-||24|A|
|VSD_(1)_|Forward on voltage|ISD= 6 A, VGS=0 V|-||1.5|V|
|trr|Reverse recoverytime|ISD= 6 A, VDD= 60 V
di/dt = 100 A/µs,
(see_Figure 19: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|315||ns|
|Qrr|Reverse recovery
charge||-|2.8||µC|
|IRRM|Reverse recovery
current||-|17.5||A|
|trr|Reverse recoverytime|ISD= 6 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see_Figure 19: "Test circuit for_
_inductive load switching and_
_diode recovery times"_)|-|480||ns|
|Qrr|Reverse recovery
charge||-|3.8||µC|
|IRRM|Reverse recovery
current||-|16||A|
## **Notes:**
(1)Pulsed: pulse duration = 300µs, duty cycle 1.5%
**Table 8: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1 mA, ID=0 A|±30|-|-|V|
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
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## **Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area for DPAK and IPAK Figure 3: Thermal impedance for DPAK and IPAK**
**==> picture [170 x 121] intentionally omitted <==**
**==> picture [164 x 161] intentionally omitted <==**
**Figure 4: Safe operating area for TO-220**
**==> picture [190 x 122] intentionally omitted <==**
**Figure 5: Thermal impedance for TO-220**
**==> picture [204 x 162] intentionally omitted <==**
**----- Start of picture text -----**
CG20930
K
δ = 0.5
δ = 0.2
δ = 0.1
10 [-1]
ZZ thth = k R = k R ththjj-C�-C�
δ δ = t = tpp / / Ƭ Ƭ
δ = 0.05
δ = 0.02
SINGLE PULSE δ = 0.01 t pp ƬƬ
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp(s)
**----- End of picture text -----**
**Figure 6: Output characteristics**
**==> picture [164 x 164] intentionally omitted <==**
**Figure 7: Transfer characteristics**
**==> picture [164 x 164] intentionally omitted <==**
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**Electrical characteristics**
## **STD7N80K5, STP7N80K5, STU7N80K5**
**Figure 8: Gate charge vs gate-source voltage**
**==> picture [181 x 165] intentionally omitted <==**
**Figure 9: Static drain-source on-resistance**
**==> picture [182 x 164] intentionally omitted <==**
**Figure 10: Capacitance variations**
**Figure 11: Output capacitance stored energy**
**==> picture [429 x 169] intentionally omitted <==**
**Figure 12: Normalized gate threshold voltage vs**
**temperature**
**==> picture [174 x 165] intentionally omitted <==**
**Figure 13: Normalized on-resistance vs temperature**
**==> picture [177 x 164] intentionally omitted <==**
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## **Electrical characteristics**
**==> picture [461 x 197] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Maximum avalanche energy vs starting
Figure 15: Normalized V(BR)DSS vs temperature
TJ
**----- End of picture text -----**
**Figure 16: Source-drain diode forward characteristics**
**==> picture [167 x 165] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 622] intentionally omitted <==**
**----- Start of picture text -----**
Figure 17: Test circuit for resistive load Figure 18: Test circuit for gate charge
switching times behavior
Figure 19: Test circuit for inductive load
Figure 20: Unclamped inductive load test
switching and diode recovery times circuit
Figure 22: Switching time waveform
Figure 21: Unclamped inductive waveform
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**----- End of picture text -----**
**STD7N80K5, STP7N80K5, STU7N80K5**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package information**
## **4.1 DPAK type A2 package information**
**Figure 23: DPAK (TO-252) type A2 package outline**
**==> picture [407 x 551] intentionally omitted <==**
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|**Package information**|**Package information**|**STD7N80K5, STP7N80K5, STU7N80K5**|**STD7N80K5, STP7N80K5, STU7N80K5**|**STD7N80K5, STP7N80K5, STU7N80K5**|
|---|---|---|---|---|
|||**Table 9: DPAK(TO-252) type A2 mechanical data**|||
||**Dim.**||**mm**||
|||**Min.**|**Typ.**|**Max.**|
||A|2.20||2.40|
||A1|0.90||1.10|
||A2|0.03||0.23|
||b|0.64||0.90|
||b4|5.20||5.40|
||c|0.45||0.60|
||c2|0.48||0.60|
||D|6.00||6.20|
||D1|4.95|5.10|5.25|
||E|6.40||6.60|
||E1|5.10|5.20|5.30|
||e|2.16|2.28|2.40|
||e1|4.40||4.60|
||H|9.35||10.10|
||L|1.00||1.50|
||L1|2.60|2.80|3.00|
||L2|0.65|0.80|0.95|
||L4|0.60||1.00|
||R||0.20||
||V2|0°||8°|
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**Package information**
**Figure 24: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)**
**==> picture [407 x 273] intentionally omitted <==**
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**Package information**
## **4.2 DPAK type C2 package information**
**Figure 25: DPAK (TO-252) type C2 package outline**
**==> picture [406 x 462] intentionally omitted <==**
**----- Start of picture text -----**
0068772_C2_22
**----- End of picture text -----**
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**Package information**
**Table 10: DPAK (TO-252) type C2 mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1||2.90 REF||
|L2|0.90||1.25|
|L3||0.51 BSC||
|L4|0.60|0.80|1.00|
|L6||1.80 BSC||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|
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**Package information**
**Figure 26: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm)**
**==> picture [406 x 275] intentionally omitted <==**
**----- Start of picture text -----**
FP_0068772_22
**----- End of picture text -----**
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**Package information**
## **4.3 DPAK type E package information**
**Figure 27: DPAK (TO-252) type E package outline**
**==> picture [407 x 551] intentionally omitted <==**
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**Package information STD7N80K5, STP7N80K5, STU7N80K5**
## **Table 11: DPAK (TO-252) type E mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|
**Figure 28: DPAK (TO-252) type E recommended footprint (dimensions are in mm)**
**==> picture [407 x 274] intentionally omitted <==**
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**Package information**
## **4.4 TO-220 package information**
**Figure 29: TO-220 type A package outline**
DocID023448 Rev 6 19/28 ~~a~~
## **Package information STD7N80K5, STP7N80K5, STU7N80K5**
|**formation**|**STD7N80K5, STP7N80K5, STU7N80K5**|**STD7N80K5, STP7N80K5, STU7N80K5**|**STD7N80K5, STP7N80K5, STU7N80K5**|
|---|---|---|---|
||**Table 12: TO-220 type Apackage mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
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**Package information**
## **4.5 IPAK type A package information**
**Figure 30: IPAK (TO-251) type A package outline**
**==> picture [406 x 461] intentionally omitted <==**
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## **Package information STD7N80K5, STP7N80K5, STU7N80K5**
|**Table 13: IPAK(TO-251) type Apackage mechanical**|**Table 13: IPAK(TO-251) type Apackage mechanical**|**Table 13: IPAK(TO-251) type Apackage mechanical**|**data**|
|---|---|---|---|
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||
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**Package information**
## **4.6 IPAK type C package information**
**Figure 31: IPAK (TO-251) type C package outline**
**==> picture [406 x 368] intentionally omitted <==**
**----- Start of picture text -----**
0068771_IK_typeC_rev14
**----- End of picture text -----**
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## **Package information STD7N80K5, STP7N80K5, STU7N80K5**
**Table 14: IPAK (TO-251) type C package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.35|
|A1|0.90|1.00|1.10|
|b|0.66||0.79|
|b2|||0.90|
|b4|5.23|5.33|5.43|
|c|0.46||0.59|
|c2|0.46||0.59|
|D|6.00|6.10|6.20|
|D1|5.20|5.37|5.55|
|E|6.50|6.60|6.70|
|E1|4.60|4.78|4.95|
|e|2.20|2.25|2.30|
|e1|4.40|4.50|4.60|
|H|16.18|16.48|16.78|
|L|9.00|9.30|9.60|
|L1|0.80|1.00|1.20|
|L2|0.90|1.08|1.25|
|θ1|3°|5°|7°|
|θ2|1°|3°|5°|
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**Packing mechanical** data
## **5 Packing mechanical data**
**Figure 32: DPAK (TO-252) tape outline**
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**Packing mechanical** data
## **Figure 33: DPAK (TO-252) reel outline**
**Table 15: DPAK (TO-252) tape and reel mechanical data**
|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||
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**Revision history**
## **6 Revision history**
**Table 16: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|17-Jul-2012|1|First release.|
|17-Oct-2012|2|Minor text changes in cover page
Modified: title and IDvalue in cover page|
|19-Dec-2012|3|Minor text changes
Added: IPAK package
Updated: Section 4: Package mechanical data for IPAK|
|18-Mar-2013|4|Modified: IARvalue on Table 2
Updated: Section 4: Package mechanical data only for DPAK
package|
|09-Oct-2013|5|The part number STF7N80K5 has been moved to a separate
datasheet
Minor text changes|
|19-May-2017|6|Updated title, description and features in cover page.
Updated_Table 2: "Absolute maximum ratings"_and_Table 4:_
_"On/off states"_.
Updated_Section 4: "Package information"_.
Minor text changes.|
DocID023448 Rev 6
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**STD7N80K5, STP7N80K5, STU7N80K5**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
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DocID023448 Rev 6
## Links
- [View this product on Novapart](https://novapart.co/products/STD7N80K5/power-mosfet-n-channel-800-v-6-a-095-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std7n80k5/mosfet-n-ch-800v-6a-to-252/dp/2849652RL)
---
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