# Power MOSFET, N Channel, 800 V, 4.5 A, 1.3 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807240/)

**URL**: https://novapart.co/products/STD6N80K5/power-mosfet-n-channel-800-v-45-a-13-ohm-to-252
**SKU**: STD6N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5980
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 85W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.5A |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807240/)

**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages 

**Datasheet** - **production data** 

**==> picture [171 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>3<br>3 1<br>1<br>DPAK<br>D [2] PAK<br>TAB TAB<br>3<br>1 [2] [3] 1 2<br>I [2] PAK TO-220<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**|**VDS**|**RDS(on)max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB6N80K5|800 V|1.6Ω|4.5 A|85 W|
|STD6N80K5|||||
|STI6N80K5|||||
|STP6N80K5|||||



- Industry’s lowest RDS(on) 

- Industry’s best figure of merit (FoM) 

- Ultra low gate charge 

**Figure 1. Internal schematic diagram** 

**==> picture [171 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB6N80K5|6N80K5|D2PAK|Tape and reel|
|STD6N80K5||DPAK||
|STI6N80K5||I2PAK|Tube|
|STP6N80K5||TO-220||



March 2015 

DocID024661 Rev 3 

1/26 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>D²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>DPAK package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.3<br>I²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
||4.4<br>TO-220 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|
||5.1<br>D²PAK and DPAK tape and reel packing information . . . . . . . . . . . . . . . . 22|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25**|



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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|30|V|
|ID|Drain current (continuous) at TC= 25 °C|4.5|A|
|ID|Drain current (continuous) at TC= 100 °C|2.8|A|
|IDM<br>(1)|Drain current (pulsed)|18|A|
|PTOT|Total dissipation at TC= 25 °C|85|W|
|IAR|Max current during repetitive or single pulse<br>avalanche (pulse width limited by Tjmax)|1.5|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAS, VDD= 50 V)|85|mJ|
|dv/dt(2)|Peak diode recovery voltage slope|4.5|V/ns|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150|°C|



1. Pulse width limited by safe operating area. 

2. ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**D2PAK**|**DPAK**|**I2PAK**|**TO-220**||
|Rthj-case|Thermal resistance junction-case|1.47||||°C/W|
|Rthj-amb|Thermal resistance junction-amb|||62.50|62.50||
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb|30|50||||



1. When mounted on FR-4 board of 1 inch², 2 oz Cu 

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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage (VGS= 0)|ID= 1 mA|800|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 800 V<br>VDS= 800 V, Tj= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ± 20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 2 A||1.3|1.6|Ω|



**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|270|-|pF|
|Coss|Output capacitance||-|25|-|pF|
|Crss|Reverse transfer<br>capacitance||-|0.7|-|pF|
|Co(tr)<br>(1)|Equivalent capacitance time<br>related|VGS= 0,<br>VDS= from 0 to 640 V|-|38|-|pF|
|Co(er)<br>(2)|Equivalent capacitance<br>energy related||-|16|-|pF|
|RG|Intrinsic gate resistance|f = 1MHz, ID= 0|-|7.5|-|Ω|
|Qg|Total gate charge|VDD= 640 V, ID= 4.5 A<br>VGS= 10 V|-|13|-|nC|
|Qgs|Gate-source charge||-|2.1|-|nC|
|Qgd|Gate-drain charge||-|9.6|-|nC|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical characteristics** 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 400 V, ID= 2.25 A,<br>RG= 4.7Ω, VGS= 10 V|-|16|-|ns|
|tr|Rise time||-|7.5|-|ns|
|td(off)|Turn-off delay time||-|28.5|-|ns|
|tf|Fall time||-|16|-|ns|



**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||4.5|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||18|A|
|VSD<br>(2)|Forward on voltage|ISD= 4.5 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 4.5 A, VDD= 60 V<br>di/dt = 100 A/µs,|-|280||ns|
|Qrr|Reverse recovery charge||-|2.2||μC|
|IRRM|Reverse recovery current||-|15.5||A|
|trr|Reverse recovery time|ISD= 4.5 A,VDD= 60 V<br>di/dt =100 A/µs,<br>Tj = 150 °C|-|450||ns|
|Qrr|Reverse recovery charge||-|3.15||μC|
|IRRM|Reverse recovery current||-|14||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

. 

**Table 8. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID= 0|30|-|-|V|



The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. 

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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK, TO-220 and I[2] PAK** 

**==> picture [196 x 22] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Thermal impedance for D [2] PAK,<br>TO-220 and I [2] PAK<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for DPAK** 

**Figure 5. Thermal impedance for DPAK** 

**==> picture [439 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Output characteristics Figure 7. Transfer characteristics<br>AM18115v1 AM18116v1<br>ID<br>ID (A) VGS=10, 11, 12V (A)<br>V DS =20V<br>8 8<br>9V<br>6 6<br>4 8V 4<br>2 2<br>7V<br>6V<br>0 0<br>0 4 8 12 16 VDS(V) 5 6 7 8 9 10 11 VGS(V)<br>2]<br>**----- End of picture text -----**<br>


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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical characteristics** 

**==> picture [463 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance<br>VGS AM18117v1 VDS ������� ������������������<br>(V) VDS (V) ���<br>VDD=640V �������<br>12 600<br>ID=4.5A<br>���<br>10 500<br>���<br>8 400<br>6 300 ���<br>4 200<br>���<br>2 100<br>0 0 �<br>0 2 4 6 8 10 12 Qg(nC) � � � � � �����<br>**----- End of picture text -----**<br>


**==> picture [227 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. Capacitance variations<br>C AM18119v1<br>(pF)<br>1000<br>Ciss<br>100<br>10 Coss<br>Crss<br>1<br>0.1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Output capacitance stored energy** 

**==> picture [227 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM18120v1<br>(µJ)<br>4<br>3<br>2<br>1<br>0<br>0 200 400 600 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [462 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Normalized gate threshold voltage vs  Figure 13. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM18082v2 AM18081v2<br>(norm) RDS(on)<br>1.2 ID=100 µA (norm) ID=2 A<br>VGS=10 V<br>1.1 2.5<br>1<br>2<br>0.9<br>1.5<br>0.8<br>0.7<br>1<br>0.6<br>0.5<br>0.5<br>0.4 0<br>-100 -50 0 50 100 150 TJ(°C) -100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Electrical characteristics** 

**Figure 14. Normalized V(BR)DSS vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM18083v1<br>(norm)<br>ID=1mA<br>1.1<br>1.05<br>1<br>0.95<br>0.9<br>0.85<br>-100 -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 15. Source-drain diode forward characteristics** 

**==> picture [226 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18121v1<br>VSD (V)<br>TJ=-50 ° C<br>0.95<br>TJ=25°C<br>0.85<br>0.75<br>TJ=150°C<br>0.65<br>0.55<br>1 2 3 4 ISD(A)<br>**----- End of picture text -----**<br>


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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [410 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Switching times test circuit for  Figure 17. Gate charge test circuit<br>**----- End of picture text -----**<br>


**==> picture [459 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>resistive load<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A A L<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 D** ² **PAK package information** 

**==> picture [118 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. D²PAK outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 445] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������<br>**----- End of picture text -----**<br>


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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Package information** 

**Table 9. D²PAK mechanical data** 

||**Table 9. D²PAK mechanical data**|**Table 9. D²PAK mechanical data**|**Table 9. D²PAK mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



DocID024661 Rev 3 

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**Package information** 

## **Figure 23. D²PAK recommended footprint[(a)]** 

**==> picture [405 x 342] intentionally omitted <==**

a. All dimension are in millimeters 

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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Package information** 

## **4.2 DPAK package information** 

## **Figure 24. DPAK (TO-252) type A2 outline** 

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**Package information** 

**Table 10. DPAK (TO-252) type A2 mechanical data** 

||**Table 10. DPAK(TO-252) type A2 mechanical data**|**Table 10. DPAK(TO-252) type A2 mechanical data**|**Table 10. DPAK(TO-252) type A2 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

## **Figure 25. DPAK (TO-252) type E outline** 

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**Package information** 

**Table 11. DPAK (TO-252) type E mechanical data** 

||**Table 11. DPAK(TO-252) type E mechanical data**|**Table 11. DPAK(TO-252) type E mechanical data**|**Table 11. DPAK(TO-252) type E mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



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**Package information** 

**==> picture [209 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26.  DPAK recommended footprint  [(b)]<br>**----- End of picture text -----**<br>


**==> picture [405 x 348] intentionally omitted <==**

**----- Start of picture text -----**<br>
��������������<br>**----- End of picture text -----**<br>


- b. All dimensions are in millimeters 

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**Package information** 

## **4.3 I** ² **PAK package information** 

**==> picture [113 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. I ² PAK outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0004982_Rev_H<br>**----- End of picture text -----**<br>


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**STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5** 

**Package information** 

**Table 12.  I²PAK mechanical data** 

||**Table 12.  I²PAK mechanical data**|**Table 12.  I²PAK mechanical data**|**Table 12.  I²PAK mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ.**|**max.**|
|A|4.40||4.60|
|A1|2.40||2.72|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.49||0.70|
|c2|1.23||1.32|
|D|8.95||9.35|
|e|2.40||2.70|
|e1|4.95||5.15|
|E|10||10.40|
|L|13||14|
|L1|3.50||3.93|
|L2|1.27||1.40|



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**Package information** 

## **4.4 TO-220 package information** 

## **Figure 28. TO-220 type A outline** 

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**Package information** 

**Table 13. TO-220 type A mechanical data** 

||**Table 13. TO-220 type A mechanical data**|**Table 13. TO-220 type A mechanical data**|**Table 13. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Packing information** 

## **5 Packing information** 

## **5.1 D** ² **PAK and DPAK tape and reel packing information** 

## **Figure 29. Tape for D²PAK and DPAK** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B1 B0<br>AE Gees<br>p o l ——e<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 SS<br>User direction of feed<br>R<br>Seo oe<br>—_»> Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**Packing information** 

## **Figure 30.  Reel for D²PAK and DPAK** 

**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 14. D²PAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|0.35<br>24.3||||
|T|0.25|||||
|W|23.7|||||



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**Packing information** 

**Table 15.  DPAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Revision history** 

## **6 Revision history** 

**Table 16. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-May-2013|1|First release.|
|05-Dec-2014|2|Updated title, features and description in cover page.<br>Added_Section 2.1: Electrical characteristics (curves)_.<br>Updated_Section 4: Package information_.<br>Minor text changes.|
|27-Mar-2015|3|Updated_Section 4: Package information_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STD6N80K5/power-mosfet-n-channel-800-v-45-a-13-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std6n80k5/mosfet-n-ch-800v-4-5a-to-252/dp/2807240)
---

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