# Power MOSFET, N Channel, 620 V, 5.5 A, 1.2 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/STD6N62K3/power-mosfet-n-channel-620-v-55-a-12-ohm-to-252
**SKU**: STD6N62K3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6670
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Po
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 620V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.5A |
| Drain Source On State Resistance | 1.2ohm |
| Gate Source Threshold Voltage Max | 3.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2098178/)
**STD6N62K3**
Datasheet
N-channel 620 V, 0.95 Ω typ., 5.5 A MDmesh™ K3 Power MOSFET in DPAK package
## **Features**
**==> picture [77 x 96] intentionally omitted <==**
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TAB
2 3
]
1
DPAK
**----- End of picture text -----**
|**Order codes**
**VDS**
STD6N62K3
620 V
•
100% avalanche tested
•
Extremely high dv/dt capability
ES|**RDS(on) max.**
1.2 Ω|**ID**
5.5 A|**PTOT**
90 W|
|---|---|---|---|
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
**==> picture [106 x 99] intentionally omitted <==**
**----- Start of picture text -----**
D(2, TAB)
G(1)
S(3) AM01475V1
**----- End of picture text -----**
## **Product status** ~~a~~
**Product status** STD6N62K3
## **Applications**
- Switching applications
## **Description**
This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
|**Product summary**
~~———~~|**Product summary**
~~———~~|
|---|---|
|**Order code**|STD6N62K3|
|**Marking**|6N62K3|
|**Package**|DPAK|
|**Packing**|Tape and reel|
**DS8813** - **Rev 2** - **April 2018** For further information contact your local STMicroelectronics sales office.
www.st.com
**STD6N62K3 Electrical ratings**
**1**
## **Electrical ratings**
**Table 1. Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|620|V|
|VGS|Gate- source voltage|± 30|V|
|ID|Drain current (continuous) at TC= 25 °C|5.5|A|
|ID|Drain current (continuous) at TC= 100 °C|3|A|
|IDM(1)|Drain current (pulsed)|22|A|
|PTOT|Total dissipation at TC= 25 °C|90|W|
|IAR(2)|Avalanche current, repetitive or not-repetitive|5.5|A|
|EAS(3)|Single pulse avalanche energy|140|mJ|
|ESD|Gate-source human body model (R = 1.5 kΩ, C = 100 pF)|2.5|kV|
|dv/dt(4)|Peak diode recovery voltage slope|12|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||
_1. Pulse width limited by safe operating area._
_2. Pulse width limited by Tj max._
_3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V._
_4. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS._
## **Table 2. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.39|°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb|50|°C/W|
_1. When mounted on 1inch² FR-4 board, 2 oz Cu._
**DS8813** - **Rev 2**
**page 2/19**
**STD6N62K3 Electrical characteristics**
## **2**
## **Electrical characteristics**
(TC = 25 °C unless otherwise specified)
## **Table 3. On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0 V|620|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 620 V|||0.8|µA|
|||VGS= 0 V, VDS= 620 V
TC= 125 °C(1)|||50|µA|
|IGSS|Gate body leakage current|VGS= ±20 V,
VDS= 0 V|||± 9|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 2.8 A||0.95|1.2|Ω|
_1. Defined by design, not subject to production test._
**Table 4. Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz,
VGS= 0 V|-|875|-|pF|
|Coss|Output capacitance|||100|||
|Crss|Reverse transfer capacitance|||17|||
|Co(er)(1)|Equivalent output capacitance
energy related|VGS= 0 V,
VDS= 0 to 480 V|-|28|-|pF|
|Co(tr) (2)|Equivalent output capacitance
time related|||63|||
|RG|Intrinsic gate resistance|f = 1 MHz open drain|-|3.5|-|Ω|
|Qg|Total gate charge|VDD= 496 V, ID= 5.5 A,
VGS= 0 to 10 V
(seeFigure 15. Test circuit for
gate charge behavior)|-|34|-|nC|
|Qgs|Gate-source charge|||4|||
|Qgd|Gate-drain charge|||22|||
_1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS._
_2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS._
**Table 5. Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 310 V, ID= 2.75 A,
RG= 4.7 Ω, VGS= 10 V
(seeFigure 14. Test circuit for
resistive load switching times
andFigure 19. Switching time
waveform)|-|22|-|ns|
|tr|Rise time|||12|||
|td(off)|Turn-off delay time|||49|||
|tf|Fall time|||20|||
**DS8813** - **Rev 2**
**page 3/19**
**STD6N62K3 Electrical characteristics**
## **Table 6. Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||5.5|A|
|ISDM (1)|Source-drain current (pulsed)||||27||
|VSD (2)|Forward on voltage|ISD= 5.5 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery time|ISD= 5.5 A, di/dt = 100 A/µs
VDD= 60 V (seeFigure
16. Test circuit for inductive
load switching and diode
recovery times)|-|290||ns|
|Qrr|Reverse recovery charge|||1.9||μC|
|IRRM|Reverse recovery current|||13.5||A|
|trr|Reverse recovery time|ISD= 5.5 A, di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C
(seeFigure 16. Test circuit for
inductive load switching and
diode recovery times)|-|335||ns|
|Qrr|Reverse recovery charge|||2.4||μC|
|IRRM|Reverse recovery current|||14.5||A|
_1. Pulse width limited by safe operating area._
_2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%._
**Table 7. Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown
voltage|ID= 0 A, IGS= ±1 mA|±30|-||V|
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
**DS8813** - **Rev 2**
**page 4/19**
**STD6N62K3 Electrical characteristics curves**
## **2.1 Electrical characteristics curves**
**Figure 1. Safe operating area**
**==> picture [170 x 141] intentionally omitted <==**
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ID AM09052v1
(A) Tj=150°C
Tc=25°C
Single pulse
10 [1]
10µs
100µs
10 [0] 1ms
10ms
10 [-1]
10 [-1] 10 [0] 10 [1] 10 [2] VDS(V)
Operation in this area isLimited by max RDS(on)
**----- End of picture text -----**
**Figure 3. Output characteristics**
**==> picture [161 x 141] intentionally omitted <==**
**----- Start of picture text -----**
ID AM09054v1
(A)
12
VGS=10V
10
8
6V
6
4
2
5V
0
0 10 20 VDS(V)
**----- End of picture text -----**
**Figure 5. Gate charge vs gate-source voltage**
**==> picture [163 x 141] intentionally omitted <==**
**----- Start of picture text -----**
AM09057v1
VGS
(V) VDS(V)
12 VDD=496V
ID=5.5A 500
VDS
10
400
8
300
6
200
4
2 100
0 0
0 10 20 30 Qg(nC)
**----- End of picture text -----**
**Figure 2. Thermal impedance**
**==> picture [145 x 136] intentionally omitted <==**
**----- Start of picture text -----**
K GC20460
10 [0]
10 [-1]
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)
**----- End of picture text -----**
**Figure 4. Transfer characteristics**
**==> picture [160 x 141] intentionally omitted <==**
**----- Start of picture text -----**
ID AM09055v1
(A) VDS=15V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 VGS(V)
**----- End of picture text -----**
**Figure 6. Static drain-source on resistance**
**==> picture [170 x 141] intentionally omitted <==**
**----- Start of picture text -----**
RDS(on) AM09056v1
( W ) VGS=10V
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0 1 2 3 4 5 6 ID(A)
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**DS8813** - **Rev 2**
**page 5/19**
**STD6N62K3 Electrical characteristics curves**
**Figure 7. Capacitance variations**
**==> picture [165 x 141] intentionally omitted <==**
**----- Start of picture text -----**
C AM09058v1
(pF)
1000
Ciss
100
Coss
10
Crss
1
0.1 1 10 100 VDS(V)
**----- End of picture text -----**
**Figure 8. Output capacitance stored energy**
**==> picture [163 x 141] intentionally omitted <==**
**----- Start of picture text -----**
Eoss AM09059v1
(µJ)
5
4
3
2
1
0
0 100 200 300 400 500 VDS(V)
**----- End of picture text -----**
**==> picture [513 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 9. Normalized gate threshold voltage vs Figure 10. Normalized on resistance vs temperature
temperature RDS(on) AM09062v1
VGS(th) AM09061v1 (norm)
(norm) ID=50µA 2.5 ID=2.8A
1.10 VGS=10V
2.0
1.00
1.5
0.90 1.0
0.5
0.80
0.0
0.70 -75 -25 25 75 125 TJ(°C)
-75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
**==> picture [513 x 170] intentionally omitted <==**
**----- Start of picture text -----**
Figure 11. Normalized BVDSS vs temperature Figure 12. Source-drain diode forward characteristics
BVDSS AM09060v1 VSD AM09063v1
(norm) (V)
ID=1mA TJ=-50°C
1.0
1.10
TJ=25°C
0.8
1.05
0.6
1.00 TJ=150°C
0.4
0.95 0.2
0.90 0
-75 -25 25 75 125 TJ(°C) 0 1 2 3 4 5 6 ISD(A)
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**DS8813** - **Rev 2**
**page 6/19**
**STD6N62K3 Electrical characteristics curves**
**==> picture [233 x 158] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13. Maximum avalanche energy vs temperature
EAS (mJ) AM09064v1
160
ID=5.5 A
140 VDD=50 V
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 TJ(°C)
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**DS8813** - **Rev 2**
**page 7/19**
**STD6N62K3 Test circuits**
## **3 Test circuits**
**==> picture [513 x 173] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior
VDD
12 V 47 kΩ
1 kΩ
100 nF
RL 2200 3.3
+ μF μF VDD
VD VGS IG= CONST 100 Ω D.U.T.
VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG
pulse width μF
47 kΩ
1 kΩ
AM01468v1 AM01469v1
**----- End of picture text -----**
**==> picture [513 x 183] intentionally omitted <==**
**----- Start of picture text -----**
Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit
diode recovery times
L
D A A A VD
G D.U.T. fastdiode 100 µH + 2200µF 3.3µF VDD
25 Ω S B B B D µF3.3 + 1000µF VDD ID
G D.U.T.
+ RG S Vi D.U.T.
_ pulse width
AM01471v1
AM01470v1
**----- End of picture text -----**
**==> picture [513 x 173] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
V(BR)DSS
VD ton toff
td(on) tr td(off) tf
IDM 90% 90%
10%
ID 0 10% VDS
VDD VDD
VGS 90%
0 10%
AM01472v1
AM01473v1
**----- End of picture text -----**
**DS8813** - **Rev 2**
**page 8/19**
**STD6N62K3 Package information**
**4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark.
**DS8813** - **Rev 2**
**page 9/19**
**STD6N62K3 DPAK (TO-252) type A2 package information**
## **4.1 DPAK (TO-252) type A2 package information**
**Figure 20. DPAK (TO-252) type A2 package outline**
**==> picture [33 x 37] intentionally omitted <==**
**==> picture [66 x 7] intentionally omitted <==**
**----- Start of picture text -----**
0068772_type-A2_rev24
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**DS8813** - **Rev 2**
**page 10/19**
**STD6N62K3 DPAK (TO-252) type A2 package information**
**Table 8. DPAK (TO-252) type A2 mechanical data**
|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|
**DS8813** - **Rev 2**
**page 11/19**
**STD6N62K3 DPAK (TO-252) type C2 package information**
## **4.2 DPAK (TO-252) type C2 package information**
**Figure 21. DPAK (TO-252) type C2 package outline**
**==> picture [32 x 48] intentionally omitted <==**
**==> picture [33 x 34] intentionally omitted <==**
**==> picture [44 x 142] intentionally omitted <==**
**==> picture [54 x 44] intentionally omitted <==**
**==> picture [45 x 7] intentionally omitted <==**
**----- Start of picture text -----**
0068772_C2_24
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**DS8813** - **Rev 2**
**page 12/19**
**STD6N62K3 DPAK (TO-252) type C2 package information**
**Table 9. DPAK (TO-252) type C2 mechanical data**
|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|
**DS8813** - **Rev 2**
**page 13/19**
**STD6N62K3 DPAK (TO-252) type C2 package information**
**Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm)**
**==> picture [111 x 196] intentionally omitted <==**
FP_0068772_24
**DS8813** - **Rev 2**
**page 14/19**
**STD6N62K3 DPAK (TO-252) packing information** ~~To~~
## **4.3**
## **DPAK (TO-252) packing information**
## **Figure 23. DPAK (TO-252) tape outline**
**==> picture [398 x 316] intentionally omitted <==**
**----- Start of picture text -----**
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
E
F
B1 J) K0 B0 paeg e s W
I
f f PEREllos oe oes:
For machine ref. only A0 P1 D1
including draft and
radii concentric around B0
User direction of feed
R
—— Bending radius
User direction of feed
AM08852v1
**----- End of picture text -----**
**DS8813** - **Rev 2**
**page 15/19**
**STD6N62K3 DPAK (TO-252) packing information**
**Figure 24. DPAK (TO-252) reel outline**
**==> picture [363 x 208] intentionally omitted <==**
**----- Start of picture text -----**
T
40mm min.
access hole
at slot location
B
D
C
N
A
Tape slot G measured
in core for at hub
Full radius tape start
2.5mm min.width
**----- End of picture text -----**
AM06038v1
**Table 10. DPAK (TO-252) tape and reel mechanical data**
||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||
**DS8813** - **Rev 2**
**page 16/19**
**STD6N62K3**
## **Revision history**
**Table 11. Document revision history**
|**Date**|**Revision **|**Changes**|
|---|---|---|
|21-Dec-2011|1|First release.|
|10-Apr-2018|2|The part number STB6N62K3 has been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is production data.
Updated title and features in cover page.
UpdatedSection 1 Electrical ratings,Section 2 Electrical characteristics,Section 2.1 Electrical
characteristics curvesandSection 4 Package information.
Minor text changes.|
**DS8813** - **Rev 2**
**page 17/19**
**STD6N62K3 Contents**
## **Contents**
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**||
||**4.1**|DPAK (TO-252) type A2 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**|DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**|DPAK (TO-252) packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17**|
**DS8813** - **Rev 2**
**page 18/19**
**STD6N62K3**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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**DS8813** - **Rev 2**
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## Links
- [View this product on Novapart](https://novapart.co/products/STD6N62K3/power-mosfet-n-channel-620-v-55-a-12-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std6n62k3/mosfet-n-ch-620v-5-5a-dpak/dp/2098178)
---
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