# Power MOSFET, N Channel, 30 V, 65 A, 0.0061 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807192/)

**URL**: https://novapart.co/products/STD65N3LLH5/power-mosfet-n-channel-30-v-65-a-00061-ohm-to-252
**SKU**: STD65N3LLH5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET V |
| Power Dissipation | 50W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 50W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0061ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.0061ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807192/)

**==> picture [61 x 39] intentionally omitted <==**

## **STD65N3LLH5 STU65N3LLH5** N-channel 30 V, 0.0061 Ω, 65 A, DPAK, IPAK STripFET™ V Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STD65N3LLH5|30 V|0.0069Ω|65 A|
|STU65N3LLH5|30 V|0.0073Ω|65 A|



- RDS(on) * Qg industry benchmark 

- Extremely low on-resistance RDS(on) 

- Very low switching gate charge 

**==> picture [171 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 3<br>2<br>1 1<br>DPAK IPAK<br>**----- End of picture text -----**<br>


- High avalanche ruggedness 

- Low gate drive power losses 

## **Application** 

Switching applications 

## **Description** 

This  STripFET™V  Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the  best-in-class figure of merit. 

## **Figure 1. Internal schematic diagram** 

**==> picture [112 x 164] intentionally omitted <==**

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD65N3LLH5|65N3LLH5|DPAK|Tape and reel|
|STU65N3LLH5|65N3LLH5|IPAK|Tube|



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_www.st.com_ 

|**Contents**|**STD65N3LLH5, STU65N3LLH5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS=0)|30|V|
|VGS|Gate-source voltage|± 22|V|
|ID|Drain current (continuous) at TC= 25 °C|65|A|
|ID|Drain current (continuous) at TC= 100 °C|46|A|
|IDM<br>(1)|Drain current (pulsed)|260|A|
|PTOT|Total dissipation at TC= 25 °C|50|W|
||Derating factor|0.3|W/°C|
|EAS<br>(2)|Single pulse avalanche energy|TBD|mJ|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 175|°C|



1. Pulse width limited by safe operating area. 

2. Starting Tj = 25 °C, Id = 32.5 A, Vdd = 12 V. 

**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|3|°C/W|
|Rthj-amb|Thermal resistance junction-case max|100|°C/W|
|Tj|Maximum lead temperature for soldering purpose|275|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>Voltage|ID= 250 µA, VGS= 0|30|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 30 V<br>VDS= 30 V,Tc = 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ± 22 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|1.8|3|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 32.5 A<br>SMD version||0.0061|0.0069|Ω|
|||VGS= 10 V, ID= 32.5 A||0.0065|0.0073|Ω|
|||VGS= 4.5 V, ID= 32.5 A<br>SMD version||0.0084|0.0093|Ω|
|||VGS= 4.5 V, ID= 32.5 A||0.0088|0.0097|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f=1 MHz,<br>VGS=0|-|1290<br>240<br>32|-|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=15 V, ID= 65 A<br>VGS=4.5 V<br>_(Figure 14)_|-|8<br>3.6<br>3.4|-|nC<br>nC<br>nC|
|Rg|Intrinsic gate resistance|f=1 MHz Gate DC Bias=0<br>test signal level = 20 mV<br>open drain||1.7||Ω|



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**Electrical characteristics** 

**Table 6. Switching on/off (resistive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=10 V, ID= 65 A,<br>RG=4.7Ω,VGS= 10 V<br>_(Figure 13 and_<br>_Figure 18)_|-|8.6<br>11.2|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD=10 V, ID= 25 A,<br>RG=4.7Ω,VGS= 10 V<br>_(Figure 13 and_<br>_Figure 18)_|-|32.4<br>6|-|ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM|Source-drain current<br>Source-drain current (pulsed)(1)||-||65<br>260|A<br>A|
|VSD|Forward on voltage|ISD=32.5 A, VGS=0|-||1.1|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=32.5 A,<br>di/dt =100 A/µs,<br>VDD=20 V,_(Figure 15)_|-|22<br>15<br>1.4||ns<br>nC<br>A|



1. Pulsed: pulse duration = 300µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area Figure 3. Thermal impedance** 

**==> picture [206 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM06486v2<br>(A) Tj=150°C<br>Tc=25°C<br>Single pulse<br>100<br>100µs<br>1ms<br>10<br>10ms<br>a ee Hl<br>1<br>A100<br>0.1 a aNl<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

## **Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance** 

**==> picture [202 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM06491v2<br>RDS(on)<br>(mΩ)<br>14 TT VGS=10V rT.<br>1012 P| | | | [| ff<br>8 TT. oT<br>6<br>||<br>PT ELL<br>24 rT TT<br>[ET<br>0 PF] i | |tl<br>3 5 7 9 11 13 15 17 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9.** 

**Capacitance variations** 

**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

## **Figure 12. Source-drain diode forward characteristics** 

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**STD65N3LLH5, STU65N3LLH5** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [398 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Switching times test circuit for  Figure 14. Gate charge test circuit<br>resistive load<br>**----- End of picture text -----**<br>


**==> picture [463 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [463 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

**==> picture [463 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>8/17  Doc ID 17281 Rev 1<br>**----- End of picture text -----**<br>


**STD65N3LLH5, STU65N3LLH5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Table 8. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1|||
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



## **Figure 19. DPAK footprint[(a)]** 

**==> picture [405 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters 

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**Package mechanical data** 

## **Figure 20. DPAK (TO-252) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 9. IPAK (TO-251) mechanical data** 

|**Table 9.**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|**IPAK(TO-251) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.3||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10o||



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**Package mechanical data** 

## **Figure 21. IPAK (TO-251) drawing** 

**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_H AM09214V1<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Packaging mechanical data** 

**==> picture [395 x 327] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. Tape for DPAK (TO-252)<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>| paeneedooeas F<br>K0 W<br>B1 B0<br>f ekaciainiaioy<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 —_—_—_—_»<br>User direction of feed<br>R<br>ELSES<br>—_——_—_» Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


**==> picture [39 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 23. Reel for DPAK (TO-252)** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-May-2011|1|First release.|



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## Links

- [View this product on Novapart](https://novapart.co/products/STD65N3LLH5/power-mosfet-n-channel-30-v-65-a-00061-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/std65n3llh5/mosfet-n-ch-30v-65a-to-252/dp/2807192)
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