# Power MOSFET, N Channel, 500 V, 7.5 A, 0.8 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4036298RL/)

**URL**: https://novapart.co/products/STD5NM50AG/power-mosfet-n-channel-500-v-75-a-08-ohm-to-252
**SKU**: STD5NM50AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7870
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.5A |
| Drain Source On State Resistance | 0.8ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036298RL/)

**STD5NM50AG** 

Datasheet 

Automotive-grade N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh Power MOSFET in a DPAK package 

## **Features** 

**==> picture [449 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB Order code VDS RDS(on) max. ID<br>STD5NM50AG 500 V 0.8 Ω 7.5 A<br>2 3<br>1<br>&. DPAK a • AEC-Q101 qualified  oo<br>• 100% avalanche tested<br>D(2, TAB) • Low input capacitance and gate charge<br>• Low gate input resistance<br>Applications<br>G(1)<br>• Switching applications<br>S(3) Description<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market. 

## **Product status link** ~~ea~~ STD5NM50AG 

|**Product summary**<br>~~Sea~~|**Product summary**<br>~~Sea~~|
|---|---|
|**Order code**|STD5NM50AG|
|**Marking**|D5NM50|
|**Package**|DPAK|
|**Packing**|Tape and reel|



**DS12724** - **Rev 2** - **April 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD5NM50AG Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Gate-source voltage|500|V|
|VDGR|Drain-gate voltage (RGS= 20 kΩ)|500|V|
|VGS|Gate- source voltage|±30|V|
|ID|Drain current (continuous) at TC= 25 °C|7.5|A|
|ID|Drain current (continuous) at TC= 100 °C|4.7||
|IDM (1)|Drain current (pulsed)|30|A|
|PTOT|Total power dissipation at TC= 25 °C|100|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.25|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50||



_1. When mounted on a 1-inch² FR-4, 2 oz Cu board_ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)|2.5|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V)|300|mJ|



**DS12724** - **Rev 2** 

**page 2/16** 

**STD5NM50AG Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

## **Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|500|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 500 V|||1|µA|
|||VGS= 0 V, VDS= 500 V,<br>TC= 125 °C(1)|||10|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±30 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 2.5 A||0.7|0.8|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|415|-|pF|
|Coss|Output capacitance||-|88|-|pF|
|Crss|Reverse transfer capacitance||-|12|-|pF|
|Coss eq. (1)|Equivalent output capacitance|VDS= 0 V to 400 V, VGS= 0 V|-|50|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz open drain|-|3|-|Ω|
|Qg|Total gate charge|VDD= 400 V, ID= 7.5 A,<br>VGS= 0 to 10 V<br>(seeFigure 13. Test circuit for gate<br>charge behavior)|-|13|-|nC|
|Qgs|Gate-source charge||-|5|-|nC|
|Qgd|Gate-drain charge||-|6|-|nC|



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS_ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 250 V, ID= 2.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 12. Test circuit for<br>resistive load switching timesand<br>Figure 17. Switching time<br>waveform)|-|16|-|ns|
|tr|Rise time||-|8|-|ns|
|td(Voff)|Off-voltage rise time|VDD= 400 V, ID= 5 A,<br>RG= 4.7 Ω, VGS= 10 V (see<br>Figure 14. Test circuit for inductive<br>load switching and diode recovery<br>timesandFigure 17. Switching<br>time waveform)|-|14|-|ns|
|tf|Fall time||-|6|-|ns|
|tc|Cross-over time||-|13|-|ns|



**DS12724** - **Rev 2** 

**page 3/16** 

**STD5NM50AG Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||7.5|A|
|ISDM(1)|Source-drain current (pulsed)||-||30|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 7.5 A|-||1.5|V|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 100 V<br>(seeFigure 14. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|185||ns|
|Qrr|Reverse recovery charge||-|1.1||μC|
|IRRM|Reverse recovery current||-|11.5||A|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 100 V, Tj= 150 °C<br>(seeFigure 14. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|270||ns|
|Qrr|Reverse recovery charge||-|1.6||μC|
|IRRM|Reverse recovery current||-|12||A|



_1. Pulse width is limited by safe operating area_ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%_ 

**DS12724** - **Rev 2** 

**page 4/16** 

**STD5NM50AG Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area** 

**==> picture [146 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
DS<br>**----- End of picture text -----**<br>


**Figure 3. Output characteristics** 

**==> picture [155 x 148] intentionally omitted <==**

**Figure 5. Normalized gate threshold voltage vs temperature** 

**==> picture [148 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>**----- End of picture text -----**<br>


**Figure 2. Thermal impedance** 

**==> picture [146 x 146] intentionally omitted <==**

**Figure 4. Transfer characteristics** 

**==> picture [152 x 145] intentionally omitted <==**

**Figure 6. Normalized V(BR)DSS vs temperature** 

**==> picture [128 x 154] intentionally omitted <==**

**==> picture [15 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.10<br>1.05<br>1.00<br>0.95<br>0.90<br>0.85<br>**----- End of picture text -----**<br>


**DS12724** - **Rev 2** 

**page 5/16** 

**STD5NM50AG Electrical characteristics (curves)** 

**Figure 7. Static drain-source on-resistance** 

**Figure 8. Normalized on-resistance vs temperature** 

**==> picture [161 x 151] intentionally omitted <==**

**==> picture [160 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.0<br>**----- End of picture text -----**<br>


**Figure 9. Gate charge vs gate-source voltage** 

**==> picture [165 x 165] intentionally omitted <==**

**Figure 10. Capacitance variations** 

**==> picture [157 x 157] intentionally omitted <==**

**Figure 11. Source-drain diode forward characteristics** 

**==> picture [186 x 186] intentionally omitted <==**

**DS12724** - **Rev 2** 

**page 6/16** 

**STD5NM50AG Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for inductive load switching and<br>Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Switching time waveform<br>Figure 16. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS12724** - **Rev 2** 

**page 7/16** 

**STD5NM50AG Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**DS12724** - **Rev 2** 

**page 8/16** 

**STD5NM50AG DPAK (TO-252) type A package information** 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 18. DPAK (TO-252) type A package outline** 

**==> picture [34 x 39] intentionally omitted <==**

**==> picture [57 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_A_26<br>**----- End of picture text -----**<br>


**DS12724** - **Rev 2** 

**page 9/16** 

**STD5NM50AG DPAK (TO-252) type A package information** 

**Table 8. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS12724** - **Rev 2** 

**page 10/16** 

**STD5NM50AG DPAK (TO-252) type A package information** 

**Figure 19. DPAK (TO-252) type A recommended footprint (dimensions are in mm)** 

**==> picture [111 x 197] intentionally omitted <==**

FP_0068772_26 

**DS12724** - **Rev 2** 

**page 11/16** 

**STD5NM50AG DPAK (TO-252) packing information** ~~To~~ 

## **4.2** 

## **DPAK (TO-252) packing information** 

## **Figure 20. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS12724** - **Rev 2** 

**page 12/16** 

**STD5NM50AG DPAK (TO-252) packing information** 

**Figure 21. DPAK (TO-252) reel outline** 

**==> picture [409 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 9. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS12724** - **Rev 2** 

**page 13/16** 

**STD5NM50AG** 

## **Revision history** 

**Table 10. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|12-Sep-2018|1|Initial release.|
|09-Apr-2019|2|UpdatedSection 4.1 DPAK (TO-252) type A package information.<br>Minor text changes.|



**DS12724** - **Rev 2** 

**page 14/16** 

**STD5NM50AG Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**<br>DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**||



**DS12724** - **Rev 2** 

**page 15/16** 

**STD5NM50AG** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS12724** - **Rev 2** 

**page 16/16** 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std5nm50ag/mosfet-n-ch-500v-7-5a-to-252/dp/4036298RL)
---

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