# Power MOSFET, N Channel, 525 V, 4.4 A, 1.5 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2344086/)

**URL**: https://novapart.co/products/STD5N52U/power-mosfet-n-channel-525-v-44-a-15-ohm-to-252
**SKU**: STD5N52U
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4320
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:525V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 525V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.4A |
| Drain Source On State Resistance | 1.5ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2344086/)

**STD5N52U** 

Datasheet 

N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a DPAK package 

## **Features** 

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TAB<br>2 3<br>&.<br>1<br>DPAK<br>**----- End of picture text -----**<br>


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D(2, TAB)<br>G(1)<br>S(3)<br>AM01476v1_tab<br>**----- End of picture text -----**<br>


## **Product status link** ~~ea~~ 

|**Product summary**<br>~~_Laas~~|**Product summary**<br>~~_Laas~~|
|---|---|
|**Order code**<br>~~_~~|STD5N52U<br>|
|**Marking**|5N52U|
|**Package**|DPAK|
|**Packing**|Tape and reel|



|**Features**||||
|---|---|---|---|
|**Order code**<br>**VDS**<br>STD5N52U<br>525 V<br>•<br>Outstanding dv/dt capability<br>~~SS~~|**RDS(on) max.**<br>1.50 Ω|**ID**<br>4.4 A|**PTOT**<br>70 W|
|•<br>Gate charge minimized||||



- Very low intrinsic capacitances 

- • Very low RDS(on) 

- Extremely low trr 

## **Applications** 

- Switching applications 

## **Description** 

This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. 

**DS6261** - **Rev 4** - **December 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD5N52U Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|±30|V|
|ID|Drain current (continuous) at TC= 25 °C|4.4|A|
|ID|Drain current (continuous) at TC= 100 °C|2.8||
|IDM (1)|Drain current (pulsed)|17.6|A|
|PTOT|Total power dissipation at TC= 25 °C|70|W|
|dv/dt|Peak diode recovery voltage slope|20|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||
|ESD|Gate-source human body model (R = 1.5 kΩ, C = 100 pF)|2.8|kV|



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.79|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50||



_1. When mounted on a 1-inch² FR-4, 2 oz Cu board_ 

## **Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)|4.4|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V)|170|mJ|



**DS6261** - **Rev 4** 

**page 2/17** 

**STD5N52U Electrical characteristics** 

## **2** 

## **Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

## **Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|525|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 525 V|||10|µA|
|||VGS= 0 V, VDS= 525 V,<br>TC= 125 °C(1)|||500|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 2.2 A||1.25|1.50|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|529|-|pF|
|Coss|Output capacitance||-|71|-|pF|
|Crss|Reverse transfer capacitance||-|13.4|-|pF|
|Coss eq. (1)|Equivalent output capacitance|VDS= 0 V to 420 V, VGS= 0 V|-|11|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|6|-|Ω|
|Qg|Total gate charge|VDD= 416 V, ID= 4.4 A,<br>VGS= 0 to 10 V<br>(seeFigure 15. Test circuit for gate<br>charge behavior)|-|16.9|-|nC|
|Qgs|Gate-source charge||-|4.2|-|nC|
|Qgd|Gate-drain charge||-|8.4|-|nC|



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS_ 

## **Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 260 V, ID= 2.2 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 14. Test circuit for<br>resistive load switching timesand<br>Figure 19. Switching time<br>waveform)|-|11.4|-|ns|
|tr|Rise time||-|13.6|-||
|td(off)|Turn-off delay time||-|23.1|-||
|tf|Fall time||-|15|-||



**DS6261** - **Rev 4** 

**page 3/17** 

**STD5N52U Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||4.4|A|
|ISDM(1)|Source-drain current (pulsed)||-||17.6|A|
|VSD|Forward on voltage|VGS= 0 V, ISD= 4.4 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 4.4 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(seeFigure 16. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|55||ns|
|Qrr|Reverse recovery charge||-|95||nC|
|IRRM|Reverse recovery current||-|3.5||A|
|trr|Reverse recovery time|ISD= 4.4 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(seeFigure 16. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|120||ns|
|Qrr|Reverse recovery charge||-|266||nC|
|IRRM|Reverse recovery current||-|4.5||A|



_1. Pulse width is limited by safe operating area_ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%_ 

## **Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID= 0 V|30|-|-|V|



The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 

**DS6261** - **Rev 4** 

**page 4/17** 

**STD5N52U Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**==> picture [145 x 145] intentionally omitted <==**

**Figure 4. Output characteristics** 

**==> picture [158 x 146] intentionally omitted <==**

**Figure 6. Normalized V(BR)DSS vs temperature** 

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(BR)<br>**----- End of picture text -----**<br>


**Figure 3. Thermal impedance** 

**==> picture [150 x 145] intentionally omitted <==**

**Figure 5. Transfer characteristics** 

**==> picture [145 x 143] intentionally omitted <==**

**Figure 7. Static drain-source on-resistance** 

**==> picture [158 x 148] intentionally omitted <==**

**DS6261** - **Rev 4** 

**page 5/17** 

**STD5N52U Electrical characteristics (curves)** 

**Figure 8. Gate charge vs gate-source voltage** 

**==> picture [170 x 147] intentionally omitted <==**

**Figure 10. Normalized gate threshold voltage vs temperature** 0.6 

**Figure 12. Source-drain diode forward characteristics** 

**==> picture [157 x 146] intentionally omitted <==**

**Figure 9. Capacitance variations** 

**==> picture [150 x 144] intentionally omitted <==**

**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [147 x 137] intentionally omitted <==**

**Figure 13. Maximum avalanche energy vs temperature** 

**==> picture [160 x 146] intentionally omitted <==**

**DS6261** - **Rev 4** 

**page 6/17** 

**STD5N52U Test circuits** 

## **3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Test circuit for inductive load switching and<br>Figure 17. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Switching time waveform<br>Figure 18. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS6261** - **Rev 4** 

**page 7/17** 

**STD5N52U Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS6261** - **Rev 4** 

**page 8/17** 

**STD5N52U DPAK (TO-252) type A package information** 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 20. DPAK (TO-252) type A package outline** 

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0068772_A_26<br>**----- End of picture text -----**<br>


**DS6261** - **Rev 4** 

**page 9/17** 

**STD5N52U DPAK (TO-252) type A package information** 

**Table 9. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS6261** - **Rev 4** 

**page 10/17** 

**STD5N52U DPAK (TO-252) type E package information** 

## **4.2 DPAK (TO-252) type E package information** 

**Figure 21. DPAK (TO-252) type E package outline** 

**==> picture [66 x 59] intentionally omitted <==**

**==> picture [48 x 55] intentionally omitted <==**

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**----- Start of picture text -----**<br>
0068772_type-E_rev.26<br>**----- End of picture text -----**<br>


**DS6261** - **Rev 4** 

**page 11/17** 

**STD5N52U DPAK (TO-252) type E package information** 

**Table 10. DPAK (TO-252) type E mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [111 x 197] intentionally omitted <==**

**==> picture [37 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
FP_0068772_26<br>**----- End of picture text -----**<br>


**DS6261** - **Rev 4** 

**page 12/17** 

**STD5N52U DPAK (TO-252) packing information** ~~To~~ 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 23. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS6261** - **Rev 4** 

**page 13/17** 

**STD5N52U DPAK (TO-252) packing information** 

**Figure 24. DPAK (TO-252) reel outline** 

**==> picture [409 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 11. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS6261** - **Rev 4** 

**page 14/17** 

**STD5N52U** 

## **Revision history** 

**Table 12. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|06-May-2009|1|First release.|
|28-Sep-2011|2|Inserted new device in I2PAK.<br>Updated tables 1, 2 and 3 with the new package.<br>Updated Section 4: Package mechanical data with the new package and<br>Section 5: Packaging mechanical data.<br>Minor text changes.|
|24-Apr-2014|3|Updated Section 4.1: DPAK, STD5N52U.<br>Modified: Qrrunit in Table 7.<br>Modified: Figure 8 and 11.<br>The part number STI5N52U has been moved to a separate datasheet.|
|10-Dec-2018|4|Part number STF5N52U was moved to a separate datasheet and the<br>document was updated accordingly.|



**DS6261** - **Rev 4** 

**page 15/17** 

**STD5N52U Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**|DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**4.3**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15**|



**DS6261** - **Rev 4** 

**page 16/17** 

**STD5N52U** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS6261** - **Rev 4** 

**page 17/17** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD5N52U/power-mosfet-n-channel-525-v-44-a-15-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std5n52u/mosfet-n-ch-525v-4-4a-dpak/dp/2344086)
---

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