# Power MOSFET, N Channel, 60 V, 15 A, 0.012 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3129964/)

**URL**: https://novapart.co/products/STD46N6F7/power-mosfet-n-channel-60-v-15-a-0012-ohm-to-252
**SKU**: STD46N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7980
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 60W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.012ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129964/)

## **STD46N6F7** 

N-channel 60 V, 0.012 Ω typ., 15 A STripFET™ F7 Power MOSFET in a DPAK package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|ID|
|---|---|---|---|
|STD46N6F7|60 V|0.014 Ω|15 A|



- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

**==> picture [60 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


## **Description** 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

AM01475v1_Tab **Table 1: Device summary Order code Marking Package Packaging** ~~SS~~ STD46N6F7 46N6F7 DPAK Tape and reel 

This is information on a product in full production. 

_www.st.com_ 

January 2016 

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|**Contents**<br>**STD46N6F7**|**Contents**<br>**STD46N6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 5|
|**3**|**Test circuits ..................................................................................... 7**|
|**4**|**Package information ....................................................................... 8**|
||4.1<br>DPAK(TO-252) type A package information ..................................... 8|
||4.2<br>Packing information ......................................................................... 11|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|± 20|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|15|A|
|ID_(1)_|Drain current (continuous) at TC= 100 °C|15|A|
|IDM_(1)(2)_|Drain current (pulsed)|60|A|
|PTOT_(1)_|Total dissipation at TC= 25 °C|60|W|
|Tj|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



## **Notes:** 

- (1)This value is limited by package and rated according to Rthj-c 

- (2)Pulse width limited by safe operating area 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb max.|50|°C/W|
|Rthj-case|Thermal resistancejunction-case max.|2.5|°C/W|



## **Notes:** 

- (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|ID= 1 mA, VGS= 0 V|60|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V<br>VDS= 60 V|||1|µA|
|IGSS|Gate-body leakage<br>current|VGS= 20 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 7.5 A||0.012|0.014|Ω|



**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 30 V, f = 1 MHz,<br>VGS= 0 V|-|1035|-|pF|
|Coss|Output capacitance||-|450|-|pF|
|Crss|Reverse transfer capacitance||-|53|-|pF|
|Qg|Totalgate charge|VDD= 30 V, ID= 15 A,<br>VGS= 10 V (see_Figure 14:_<br>_"Test circuit for gate charge_<br>_behavior"_)|-|17|-|nC|
|Qgs|Gate-source charge||-|5.7|-|nC|
|Qgd|Gate-drain charge||-|5.7|-|nC|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 30 V, ID= 7.5 A,<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 13: "Test circuit for_<br>_resistive load switching times"_)|-|14.5|-|ns|
|tr|Rise time||-|15.3|-|ns|
|td(off)|Turn-off delay time||-|19.4|-|ns|
|tf|Fall time||-|8|-|ns|



**Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD_(1)_|Forward on voltage|ISD= 15 A, VGS= 0 V|-||1.2|V|
|trr|Reverse recoverytime|ID= 15 A, di/dt = 100 A/µs<br>VDD= 48 V (see_Figure 15:_<br>_"Test circuit for inductive load_<br>_switching and diode recovery_<br>_times"_)|-|26.8||ns|
|Qrr|Reverse recovery charge||-|14.2||nC|
|IRRM|Reverse recovery current||-|1.06||A|



## **Notes:** 

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [386 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area  Figure 3: Thermal impedance<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics Figure 5: Transfer characteristics** 

**==> picture [156 x 142] intentionally omitted <==**

**==> picture [157 x 142] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance** 

**==> picture [159 x 142] intentionally omitted <==**

**==> picture [161 x 141] intentionally omitted <==**

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## **Electrical characteristics** 

**==> picture [385 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Normalized gate threshold voltage<br>Figure 8: Capacitance variations<br>vs temperature<br>**----- End of picture text -----**<br>


**==> picture [398 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Normalized on-resistance vs  Figure 11: Normalized V(BR)DSS vs<br>temperature  temperature<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

**==> picture [157 x 141] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 578] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load<br>Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


**==> picture [24 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
7/14<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK(TO-252) type A package information** 

**Figure 19: DPAK (TO-252) type A package outline** 

**==> picture [408 x 395] intentionally omitted <==**

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**Package information** 

|**7**|**Package information**|**Package information**|**Package information**|
|---|---|---|---|
||**Table 8: DPAK(TO-252) type A mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

**Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [417 x 286] intentionally omitted <==**

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**Package information** 

## **4.2 Packing information** 

**Figure 21: DPAK (TO-252) tape outline** 

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**Package information** 

**Figure 22: DPAK (TO-252) reel outline** 

**Table 9: DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Dec-2015|1|First release.|
|26-Jan-2016|2|Document statuspromoted frompreliminarytoproduction data.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/std46n6f7/mosfet-n-ch-60v-15a-60w-to-252/dp/3129964)
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