# Power MOSFET, N Channel, 800 V, 2.5 A, 2.8 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3132725/)

**URL**: https://novapart.co/products/STD3N80K5/power-mosfet-n-channel-800-v-25-a-28-ohm-to-252
**SKU**: STD3N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3880
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 2.8ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132725/)

## **STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD3N80K5|800 V|3.5 Ω|2.5 A|60 W|
|STF3N80K5||||20 W|
|STP3N80K5||||60 W|
|STU3N80K5|||||



- Industry’s lowest RDS(on) x area 

- Industry’s best FoM (figure of merit) 

- Ultra-low gate charge 

- 100% avalanche tested 

- Zener-protected 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD3N80K5|3N80K5|DPAK|Tape and reel|
|STF3N80K5||TO-220FP|Tube|
|STP3N80K5||TO-220||
|STU3N80K5||IPAK||



This is information on a product in full production. 

_www.st.com_ 

July 2017 

DocID025000 Rev 4 

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**Contents** 

**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

|**Contents**<br>**STD3N80K5, STF3N80K5, STP3N80K5,**<br>**STU3N80K5**|**Contents**<br>**STD3N80K5, STF3N80K5, STP3N80K5,**<br>**STU3N80K5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>DPAK (TO-252) type A package information................................... 10|
||4.2<br>DPAK (TO-252) type E package information................................... 13|
||4.3<br>DPAK (TO-252) packing information ............................................... 15|
||4.4<br>TO-220FP package information ...................................................... 17|
||4.5<br>TO-220 type A package information ................................................ 19|
||4.6<br>IPAK (TO-251) type A package information .................................... 21|
|**5**|**Revision history ............................................................................ 23**|



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**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|||**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**DPAK**|**TO-220FP**|**TO-220**|**IPAK**||
|VGS|Gate-source voltage|±30||||V|
|ID|Drain current (continuous) at<br>TC= 25 °C|2.5||||A|
|ID|Drain current (continuous) at<br>TC= 100 °C|1.6||||A|
|ID_(1)_|Drain current (pulsed)|10||||A|
|PTOT|Total dissipation at TC= 25 °C|60|20|60|60|W|
|VISO|Insulation withstand voltage (RMS)<br>from all three leads to external<br>heat-sink (t = 1 s, TC= 25 °C)||2.5|||kV|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|4.5||||V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|||||
|Tj|Operating junction temperature range|-55 to 150||||°C|
|Tstg|Storage temperature range||||||



## **Notes:** 

- (1)Pulse width limited by safe operating area. 

- (2)ISD ≤ 2.5 A, di/dt =100 A/μs; VDS peak < V(BR)DSS. 

- (3)VDS ≤ 640 V. 

**Table 3: Thermal data** 

||||**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**DPAK**|**TO-220FP**|**TO-220**|**IPAK**||
|Rthj-case|Thermal resistance junction-case|2.08|6.25|2.08||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|62.5|100|°C/W|
|Rthj-pcb_(1)_|Thermal resistance junction-pcb|50||||°C/W|



## **Notes:** 

- (1)When mounted on FR-4 board of 1 inch², 2 oz Cu. 

## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (pulse width limited byTjmax)|1|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR, VDD= 50 V)|65|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 5: On/off-state** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|800|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 800 V|||1|µA|
|||VGS= 0 V, VDS= 800 V,<br>TC= 125 ° C_(1)_|||50|µA|
|IGSS|Gate bodyleakage current|VDS= 0 V, VGS= ±20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDD= VGS, ID= 100µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 1 A||2.8|3.5|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|130|-|pF|
|Coss|Output capacitance||-|14|-|pF|
|Crss|Reverse transfer<br>capacitance||-|0.6|-|pF|
|Co(tr)_(1)_|Equivalent capacitance time<br>related|VGS= 0 V, VDS= 0 to 640 V|-|20|-|pF|
|Co(er)_(2)_|Equivalent capacitance<br>energyrelated||-|9|-|pF|
|Rg|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|15.5|-|Ω|
|Qg|Totalgate charge|VDD= 640 V, ID= 2.5 A<br>VGS= 0 to 10 V<br>(see_Figure 19: "Test circuit_<br>_for gate charge behavior"_)|-|9.5|-|nC|
|Qgs|Gate-source charge||-|1.5|-|nC|
|Qgd|Gate-drain charge||-|7.5|-|nC|



## **Notes:** 

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 

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**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Electrical characteristics** 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 400 V, ID= 1.25 A, RG= 4.7 Ω<br>VGS= 10 V<br>(see_Figure 18: "Test circuit for_<br>_resistive load switching times"_and<br>_Figure 23: "Switching time_<br>_waveform"_)|-|8.5|-|ns|
|tr|Rise time||-|10.5|-|ns|
|td(off)|Turn-off delaytime||-|20.5|-|ns|
|tf|Fall time||-|25|-|ns|



**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain<br>current||-||2.5|A|
|ISDM_(1)_|Source-drain<br>current (pulsed)||-||10|A|
|VSD_(2)_|Forward on voltage|ISD= 2.5 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery<br>time|ISD= 2.5 A, di/dt = 100 A/μs,<br>VDD= 60 V (see_Figure 20: "Test_<br>_circuit for inductive load switching_<br>_and diode recovery times"_)|-|265||ns|
|Qrr|Reverse recovery<br>charge||-|1.2||μC|
|IRRM|Reverse recovery<br>current||-|9.2||A|
|trr|Reverse recovery<br>time|ISD= 2.5 A, di/dt = 100 A/μs,<br>VDD= 60 V, Tj= 150 °C ( see_Figure_<br>_20: "Test circuit for inductive load_<br>_switching and diode recovery times"_)|-|430||ns|
|Qrr|Reverse recovery<br>charge||-|1.9||μC|
|IRRM|Reverse recovery<br>current||-|8.8||A|



## **Notes:** 

(1)Pulse width limited by safe operating area 

(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

**Table 9: Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source<br>breakdown voltage|IGS= ±1 mA, ID= 0 A|±30|-|-|V|



The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. 

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**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area for DPAK and IPAK** 

**==> picture [182 x 159] intentionally omitted <==**

**Figure 3: Thermal impedance for DPAK and IPAK** 

**==> picture [157 x 159] intentionally omitted <==**

**Figure 4: Safe operating area for TO-220FP** 

**==> picture [182 x 159] intentionally omitted <==**

**Figure 5: Thermal impedance for TO-220FP** 

**==> picture [162 x 158] intentionally omitted <==**

**Figure 6: Safe operating area for TO-220** 

**==> picture [189 x 164] intentionally omitted <==**

**Figure 7: Thermal impedance for TO-220** 

**==> picture [169 x 164] intentionally omitted <==**

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**Electrical characteristics** 

## **STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Figure 8: Output characteristics** 

**==> picture [178 x 165] intentionally omitted <==**

**Figure 10: Gate charge vs gate-source voltage** 

**==> picture [181 x 165] intentionally omitted <==**

**Figure 12: Capacitance variations** 

**==> picture [186 x 165] intentionally omitted <==**

**Figure 9: Transfer characteristics** 

**==> picture [174 x 165] intentionally omitted <==**

**Figure 11: Static drain-source on-resistance** 

**==> picture [184 x 164] intentionally omitted <==**

**Figure 13: Output capacitance stored energy** 

**==> picture [181 x 165] intentionally omitted <==**

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**Electrical characteristics** 

**==> picture [209 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Normalized gate threshold voltage vs<br>temperature<br>**----- End of picture text -----**<br>


**==> picture [183 x 164] intentionally omitted <==**

**Figure 16: Normalized VDS vs temperature** 

**==> picture [172 x 165] intentionally omitted <==**

**Figure 15: Normalized on-resistance vs temperature** 

**==> picture [184 x 166] intentionally omitted <==**

**Figure 17: Source-drain diode forward characteristics** 

**==> picture [184 x 165] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18: Test circuit for resistive load<br>Figure 19: Test circuit for gate charge<br>switching times<br>behavior<br>VDD<br>RL<br>VGS IG= CONST 100 Ω D.U.T.<br>pulse width + 2.7 kΩ<br>2200 VG<br>μF<br>47 kΩ<br>1 kΩ<br>AM01469v10<br>Figure 20: Test circuit for inductive load  Figure 21: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 23: Switching time waveform<br>Figure 22: Unclamped inductive waveform<br>DocID025000 Rev 4  9/24<br>**----- End of picture text -----**<br>


**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 24: DPAK (TO-252) type A package outline** 

**==> picture [408 x 315] intentionally omitted <==**

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**Package information** 

## **STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Table 10: DPAK (TO-252) type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

**Figure 25: DPAK (TO-252) type A recommended footprint (dimensions are in mm)** 

**==> picture [407 x 274] intentionally omitted <==**

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**Package information** 

## **4.2 DPAK (TO-252) type E package information** 

**Figure 26: DPAK (TO-252) type E package outline** 

**==> picture [407 x 552] intentionally omitted <==**

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**Package information STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

|**formation**|**STD3N80K5, STF3N80K5, STP3N80K5,**<br>**STU3N80K5**|**STD3N80K5, STF3N80K5, STP3N80K5,**<br>**STU3N80K5**|**STD3N80K5, STF3N80K5, STP3N80K5,**<br>**STU3N80K5**|
|---|---|---|---|
||**Table 11: DPAK(TO-252) type E mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 27: DPAK (TO-252) type E recommended footprint (dimensions are in mm)** 

**==> picture [407 x 273] intentionally omitted <==**

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**Package information** 

## **STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

## **4.3 DPAK (TO-252) packing information** 

**Figure 28: DPAK (TO-252) tape outline** 

~~OT~~ DocID025000 Rev 4 15/24 

**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Package information** 

## **Figure 29: DPAK (TO-252) reel outline** 

**Table 12: DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Package information** 

## **4.4 TO-220FP package information** 

**Figure 30: TO-220FP package outline** 

**==> picture [406 x 574] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_12_B<br>**----- End of picture text -----**<br>


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**Package information STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

||||**STU3N80K5**|
|---|---|---|---|
||**Table 13: TO-220FPpackage mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package information** 

## **4.5 TO-220 type A package information** 

**Figure 31: TO-220 type A package outline** 

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**Package information STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Table 14: TO-220 type A package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

**Package information** 

## **4.6 IPAK (TO-251) type A package information** 

**Figure 32: IPAK (TO-251) type A package outline** 

**==> picture [406 x 462] intentionally omitted <==**

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**Package information STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

||||**STU3N80K5**|
|---|---|---|---|
|**Table 15: IPAK(TO-251) type Apackage mechanical**|||**data**|
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



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**Revision history** 

## **5 Revision history** 

**Table 16: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Jul-2013|1|First release.|
|15-Jan-2014|2|– Modified: PTOT and EAS values in Table 2<br>– Modified: Rthj-case values in Table 3<br>– Modified: the entire typical values in Table 5 and 6<br>– Modified: ISD and ISDM max values and typical values in Table 7<br>– Updated: Table 24 and Table 9<br>– Added: Section 2.1: Electrical characteristics (curves)<br>– Minor text changes|
|17-Jan-2014|3|– Modified: Figure 8 and 9<br>– Minor text changes|
|17-Jul-2017|4|Updated_Table 7: "Switching times"_and_Section 4: "Package information"_.<br>Minor text changes.|



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# **STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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## Links

- [View this product on Novapart](https://novapart.co/products/STD3N80K5/power-mosfet-n-channel-800-v-25-a-28-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std3n80k5/mosfet-n-ch-800v-2-5a-150deg-c/dp/3132725)
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