# Power MOSFET, P Channel, 40 V, 36 A, 0.0175 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3129941/)

**URL**: https://novapart.co/products/STD36P4LLF6/power-mosfet-p-channel-40-v-36-a-00175-ohm-to-252
**SKU**: STD36P4LLF6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4380
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | STripFET F6 |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.0175ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129941/)

## **STD36P4LLF6** 

P-channel 40 V, 0.0175 Ω typ.,36 A, STripFET™ F6 Power MOSFET in a DPAK package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD36P4LLF6|40 V|0.0205 Ω|36 A|60 W|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

**==> picture [96 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

> [For the P-channel Power MOSFET, current ] polarity of voltages and current have to be reversed. 

- AM11258v1 

- **Table 1: Device summary** 

- **Order code Marking Package Packaging** 

- ~~+}~~ STD36P4LLF6 36P4LLF6 DPAK Tape and reel 

This is information on a product in full production. 

March 2015 

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_www.st.com_ 

|**Contents**<br>**STD36P4LLF6**|**Contents**<br>**STD36P4LLF6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>DPAK (TO-252) type A2 package information................................. 10|
||4.2<br>Packing information ......................................................................... 13|
|**5**|**Revision history ............................................................................ 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|40|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at TC= 25 °C|36|A|
|ID|Drain current (continuous) at TC= 100 °C|26|A|
|IDM<br>_(1)_|Drain current (pulsed)|144|A|
|PTOT|Total dissipation at Tc= 25 °C|60|W|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Maximumjunction temperature|175|°C|



## **Notes:** 

(1) Pulse width limited by safe operating area. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|2.5|°C/W|



For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**<br>~~Poe~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Poe~~|Drain-source breakdown<br>voltage<br>~~ee~~|VGS= 0 V, ID= 250 µA<br>~~ee~~|40<br>~~ee~~|~~ee~~|~~ee~~|V<br>~~ee~~|
|IDSS<br>~~e~~<br>~~pf~~|Zero gate voltage Drain<br>current<br>~~ee~~<br>~~pf~~<br>~~oT~~|VGS= 0 V, VDS= 40 V<br>~~ee~~<br>~~CH~~|~~ee~~<br>~~CH~~|~~ee~~<br>~~CH~~|1<br>~~ee~~<br>~~CH~~|µA<br>~~ee~~<br>~~CH~~|
|||VGS= 0 V, VDS= 40 V,<br>TC= 125 °C<br>~~CH~~<br>~~oT~~<br>~~ee ee~~|~~CH~~<br>~~oT~~<br>~~ee~~|~~CH~~<br>~~oT~~<br>~~ee~~|10<br>~~CH~~<br>~~oT~~<br>~~ee~~|µA<br>~~CH~~<br>~~oT~~<br>~~ee~~|
|IGSS<br>~~pf~~<br>~~ee~~|Gate-body leakage<br>current<br>~~pf~~<br>~~oT~~<br>~~ee~~|VDS= 0 V, VGS= ± 20 V<br>~~CH~~<br>~~oT~~<br>~~ee~~<br>~~ee ee~~|~~CH~~<br>~~oT~~<br>~~ee~~<br>~~ee~~|~~CH~~<br>~~oT~~<br>~~ee~~<br>~~ee~~|±100<br>~~CH~~<br>~~oT~~<br>~~ee~~<br>~~ee~~|nA<br>~~CH~~<br>~~oT~~<br>~~ee~~<br>~~ee~~|
|VGS(th)<br>~~a~~|Gate threshold voltage<br>~~a~~|VDS= VGS, ID= 250µA<br>~~ee ee~~<br>~~a~~|1<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|2.5<br>~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|RDS(on)<br>~~a~~|Static drain-source on-<br>resistance<br>~~a~~<br>~~a~~|VGS= 10 V, ID= 18 A<br>~~a~~|~~a~~|0.0175<br>~~a~~|0.0205<br>~~a~~|Ω<br>~~a~~<br>~~a~~|
|||VGS= 4.5 V, ID= 18 A<br>~~a~~|~~a~~|0.024<br>~~a~~|0.029<br>~~a~~||



|**Symbol**<br>~~a~~<br>~~ee~~|**Parameter**<br>~~a~~|**Test conditions**<br>~~a~~|**Min.**<br>~~a~~<br>~~a~~|**Typ.**<br>~~a~~<br>~~a~~|**Max.**<br>~~a~~<br>~~a~~|**Unit**<br>~~a~~<br>~~a~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~ee~~|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V<br>~~pop~~|-<br>~~a~~|2850<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~ee~~<br>~~a~~<br>~~pop~~|Output capacitance<br>~~a~~<br>~~pop~~||-<br>~~a~~<br>~~ptt~~|270<br>~~a~~<br>~~ptt~~|-<br>~~a~~<br>~~ptt~~|pF<br>~~a~~<br>~~ptt~~|
|Crss<br>~~pop~~<br>~~———~~|Reverse transfer<br>capacitance<br>~~pop~~<br>~~———~~||-<br>~~ptt~~|180<br>~~ptt~~|-<br>~~ptt~~|pF<br>~~ptt~~|
|Qg<br>~~pop~~<br>~~———~~|Totalgate charge<br>~~pop~~<br>~~———~~|VDD= 20 V, ID= 36 A,<br>VGS= 4.5 V (see_Figure 14:_<br>_"Gate charge test circuit"_)<br>~~pop~~|-<br>~~ptt~~|22<br>~~ptt~~|-<br>~~ptt~~|nC<br>~~ptt~~|
|Qgs<br>~~———~~<br>~~a~~|Gate-source charge<br>~~———~~||-<br>~~ee~~|9.4<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|Qgd<br>~~———~~|Gate-drain charge<br>~~———~~||-|7.3|-|nC|
|RG<br>~~———~~|Gate input resistance<br>~~———~~|ID= 0 A, gate DC<br>bias = 0 V, f = 1 MHz,<br>magnitude of alternative<br>signal = 20 mV|-|1.4|-|Ω|



## **Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 20 V, ID= 18 A<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Switching_<br>_times test circuit for_<br>_resistive load"_)|-|43|-|ns|
|tr|Rise time||-|47|-|ns|
|td(off)|Turn-off-delaytime||-|148|-|ns|
|tf|Fall time||-|19|-|ns|



For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

~~©~~ 4/16 DocID025616 Rev 2 

**STD36P4LLF6** 

**Electrical characteristics** 

**Table 7: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on voltage|VGS= 0 V, ISD= 18 A|-||1.1|V|
|trr|Reverse recoverytime|ISD= 36 A,<br>di/dt = 100 A/µs,<br>VDD= 32 V, Tj= 150 °C<br>(see_Figure 15: "Test_<br>_circuit for inductive load_<br>_switching and diode_<br>_recovery times"_)|-|26||ns|
|Qrr|Reverse recoverycharge||-|21||nC|
|IRRM|Reverse recovery current||-|1.7||A|



## **Notes:** 

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5% 

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [154 x 142] intentionally omitted <==**

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**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>**----- End of picture text -----**<br>


**==> picture [136 x 136] intentionally omitted <==**

**Figure 4: Output characteristics** 

**==> picture [150 x 145] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [149 x 143] intentionally omitted <==**

**Figure 6: Normalized gate threshold voltage Figure 7: Normalized V(BR)DSS vs vs temperature temperature** 

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**----- Start of picture text -----**<br>
Electrical characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9: Normalized on-resistance vs.<br>Figure 8: Static drain-source on-resistance  temperature<br>**----- End of picture text -----**<br>


**Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations voltage** 

**==> picture [144 x 142] intentionally omitted <==**

**==> picture [146 x 146] intentionally omitted <==**

**Figure 12: Source-drain diode forward characteristics** 

**==> picture [151 x 144] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [403 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Switching times test circuit for<br>Figure 14: Gate charge test circuit<br>resistive load<br>**----- End of picture text -----**<br>


**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**==> picture [215 x 126] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 DPAK (TO-252) type A2 package information** 

**Figure 16: DPAK (TO-252) type A2 package outline** 

**==> picture [407 x 551] intentionally omitted <==**

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**Package information** 

**Table 8: DPAK (TO-252) type A2 mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

**Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm)** 

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**Package information** 

**==> picture [459 x 366] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.2  Packing information<br>Figure 18: Tape for DPAK (TO-252)<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>K0 W<br>B1 B0<br>P asialniatalct<br>For machineref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>Zz<br>Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**Package information** 

**Figure 19: Reel for DPAK (TO-252)** 

**==> picture [361 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D C<br>N<br>A<br>Tape slot G measured<br>in core for at hub<br>Full radius tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


**==> picture [43 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM06038v1<br>**----- End of picture text -----**<br>


**Table 9: DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|||**Reel**||
|---|---|---|---|---|---|
|**Dim.**|**m**|**m**|**Dim.**|**m**|**m**|
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Dec-2013|1|First revision.|
|24-Mar-2015|2|Text edits throughout document<br>On cover page, updated title, applications, description and features table<br>Updated Table 4: Static<br>Updated Table 5: Dynamic<br>Updated Table 6: Switching times<br>Updated Table 7: Source-drain diode<br>Added Section 2.1: Electrical characteristics (curves)<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/std36p4llf6/mosfet-p-ch-40v-36a-60w-to-252/dp/3129941)
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