# Power MOSFET, N Channel, 60 V, 28 A, 0.02 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1752033/)

**URL**: https://novapart.co/products/STD30NF06T4/power-mosfet-n-channel-60-v-28-a-002-ohm-to-252
**SKU**: STD30NF06T4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4980
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752033/)

**STD30NF06** 

**==> picture [58 x 36] intentionally omitted <==**

## N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STri FET™ II POWER MOSFET p 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STD30NF06|60 V|<0.028Ω|28 A|



- I TYPICAL RDS(on) = 0.020Ω 

- I EXCEPTIONAL dv/dt CAPABILITY 

- I 100% AVALANCHE TESTED 

- I THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") 

- I SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 

## **DESCRIPTION** 

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **APPLICATIONS** 

- I HIGH CURRENT, HIGH SWITCHING SPEED 

- I MOTOR CONTROL , AUDIO AMPLIFIERS 

- I SOLENOID AND RELAY DRIVERS 

- I DC-DC & DC-AC CONVERTERS 

**==> picture [222 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>3<br>2 1<br>1<br>IPAK DPAK<br>TO-251 TO-252<br>(Suffix “-1”) (Suffix “T4”)<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

**==> picture [75 x 111] intentionally omitted <==**

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source Voltage (VGS= 0)|60|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|60|V|
|VGS|Gate- source Voltage|± 20|V|
|ID|Drain Current (continuous) at TC= 25°C|28|A|
|ID|Drain Current (continuous) at TC= 100°C|20|A|
|IDM(•)|Drain Current (pulsed)|112|A|
|Ptot|Total Dissipation at TC= 25°C|70|W|
||Derating Factor|0.47|W/°C|
|dv/dt(1)|Peak Diode Recovery voltage slope|10|V/ns|
|EAS(2)|Single Pulse Avalanche Energy|230|mJ|
|Tstg|Storage Temperature|-55 to 175|°C|
|Tj|Max. Operating Junction Temperature|||



(•) Pulse width limited by safe operating area. 

- (1) ISD ≤28A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 

- (2) Starting Tj = 25[o] C, ID = 15A, VDD = 30V 

. 

March 2002 

1/10 

**STD30NF06** 

## **THERMAL DATA** 

|Rthj-case<br>Rthj-amb<br>Tl|Thermal Resistance Junction-case<br>Thermal Resistance Junction-ambient<br>Maximum Lead Temperature For Soldering Purpose<br>Max<br>Max|2.14<br>100<br>275|°C/W<br>°C/W<br>°C|
|---|---|---|---|



## **ELECTRICAL CHARACTERISTICS** (Tcase = 25 °C unless otherwise specified) 

## OFF 

|OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|60|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating TC= 100°C|||1<br>10|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|ON(***)**|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS<br>ID= 250 µA|2||4|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10 V<br>ID= 15 A||0.020|0.028|Ω|
|DYNAMIC|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(*)|Forward Transconductance|VDS= 15 V<br>ID= 15 A||40||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||1750<br>220<br>70||pF<br>pF<br>pF|



2/10 

**STD30NF06** 

## **ELECTRICAL CHARACTERISTICS** (continued) 

## SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>T<br>R|urn-on Delay Time<br>ise Time|VDD= 30 V<br>ID= 1<br>RG= 4.7Ω<br>VGS= 1<br>(Resistive Load, Figure 3)|9 A<br>0 V|20<br>100||ns<br>ns|
|Qg<br>Qgs<br>Qgd<br>T<br>G<br>G|otal Gate Charge<br>ate-Source Charge<br>ate-Drain Charge|VDD= 48V ID= 38A VGS= 1|0V|43<br>9.5<br>15|58|nC<br>nC<br>nC|



## SWITCHING OFF 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)<br>tf<br>T<br>F|urn-off Delay Time<br>all Time|VDD= 30 V<br>ID= 19 A<br>RG= 4.7Ω,<br>VGS= 10 V<br>(Resistive Load, Figure 3)|<br>|50<br>20||ns<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM (•)<br>S<br>S|ource-drain Current<br>ource-drain Current (puls|ed)|||28<br>112|A<br>A|
|VSD (*)<br>F|orward On Voltage|ISD= 28 A<br>VGS= 0|||1.5|V|
|trr<br>Qrr<br>IRRM<br>R<br>R<br>R|everse Recovery Time<br>everse Recovery Charge<br>everse Recovery Current|<br>ISD= 28 A<br>di/dt = 100<br>VDD= 30 V<br>Tj= 150°<br>(see test circuit, Figure 5)|A/µs<br>C|95<br>260<br>5.5||ns<br>µC<br>A|



(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

(•)Pulse width limited by safe operating area. 

Safe Operating Area 

**==> picture [220 x 223] intentionally omitted <==**

Thermal Impedance 

**==> picture [221 x 208] intentionally omitted <==**

3/10 

**STD30NF06** 

Output Characteristics 

Transconductance 

Gate Charge vs Gate-source Voltage 

Transfer Characteristics 

Static Drain-source On Resistance 

Capacitance Variations 

4/10 

**STD30NF06** 

Normalized Gate Threshold Voltage vs Temperature 

Normalized on Resistance vs Temperature 

Source-drain Diode Forward Characteristics 

Normalized Breakdown Voltage vs Temperature 

. . 

5/10 

**STD30NF06** 

**Fig. 1: Unclamped Inductive Load Test Circuit** 

**==> picture [214 x 163] intentionally omitted <==**

**Fig. 3:** Switching Times Test Circuits For Resistive Load 

**==> picture [211 x 89] intentionally omitted <==**

**Fig. 2:** Unclamped Inductive Waveform 

**==> picture [214 x 163] intentionally omitted <==**

**Fig. 4:** Gate Charge test Circuit 

**==> picture [214 x 146] intentionally omitted <==**

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [202 x 117] intentionally omitted <==**

6/10 

**STD30NF06** 

## **TO-251 (IPAK) MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.2||2.4|0.086||0.094|
|A1|0.9||1.1|0.035||0.043|
|A3|0.7||1.3|0.027||0.051|
|B|0.64||0.9|0.025||0.031|
|B2|5.2||5.4|0.204||0.212|
|B3|||0.85|||0.033|
|B5||0.3|||0.012||
|B6|||0.95|||0.037|
|C|0.45||0.6|0.017||0.023|
|C2|0.48||0.6|0.019||0.023|
|D|6||6.2|0.236||0.244|
|E|6.4||6.6|0.252||0.260|
|G|4.4||4.6|0.173||0.181|
|H|15.9||16.3|0.626||0.641|
|L|9||9.4|0.354||0.370|
|L1|0.8||1.2|0.031||0.047|
|L2||0.8|1||0.031|0.039|



**==> picture [358 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
H<br>L2 D L<br>L1<br>0068771-E<br>C<br>A<br>C2  A3<br>A1<br>B3  B6<br>B  B5<br>3<br>= = =<br>E  B2  2  G<br>= = =<br>1<br>**----- End of picture text -----**<br>


7/10 

**STD30NF06** 

## **TO-252 (DPAK) MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.2||2.4|0.086||0.094|
|A1|0.9||1.1|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|B|0.64||0.9|0.025||0.035|
|B2|5.2||5.4|0.204||0.212|
|C|0.45||0.6|0.017||0.023|
|C2|0.48||0.6|0.019||0.023|
|D|6||6.2|0.236||0.244|
|E|6.4||6.6|0.252||0.260|
|G|4.4||4.6|0.173||0.181|
|H|9.35||10.1|0.368||0.397|
|L2||0.8|||0.031||
|L4|0.6||1|0.023||0.039|



**==> picture [379 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
H<br>DETAIL "A"<br>L2 D<br>DETAIL "A"<br>L4<br>0068772-B<br>A<br>C2  A1<br>C<br>A2<br>B<br>3<br>= = =<br>E  B2  2  G<br>= = =<br>1<br>**----- End of picture text -----**<br>


8/10 

**STD30NF06** 

*on sales type 

9/10 

**STD30NF06** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved 

All other names are the property of their respective owners. 

STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

10/10 



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---

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