# Power MOSFET, P Channel, 30 V, 12 A, 0.027 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3132723/)

**URL**: https://novapart.co/products/STD28P3LLH6AG/power-mosfet-p-channel-30-v-12-a-0027-ohm-to-252
**SKU**: STD28P3LLH6AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4790
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vg

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | STripFET H6 |
| Qualification | AEC-Q101 |
| Power Dissipation | 33W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.027ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132723/)

## **STD28P3LLH6AG** 

Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on)**<br>**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD28P3LLH6AG|-30V|0.030Ω|-12A|33W|



- Designed for automotive applications and AEC-Q101 qualified 

- Very low on-resistance 

- Very low gate charge 

**Figure 1: Internal schematic diagram** 

**==> picture [96 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


**==> picture [33 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM11258v1<br>**----- End of picture text -----**<br>


- High avalanche ruggedness 

- Low gate drive power loss 

- Logic level 

## **Applications** 

- Switching applications 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary Order code Marking Package Packing** ~~_—~~ STD28P3LLH6AG 28P3LLH6 DPAK Tape and reel 

This is information on a product in full production. 

_www.st.com_ 

September 2015 

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|**Contents**<br>**STD28P3LLH6AG**|**Contents**<br>**STD28P3LLH6AG**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>DPAK (TO-252) type A package information..................................... 9|
||4.2<br>DPAK (TO-252) packing information ............................................... 12|
|**5**|**Revision history ............................................................................ 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|-30|V|
|VGS|Gate-source voltage|±18|V|
|ID<br>_(1)_|Drain current (continuous) at Tcase= 25 °C|-12|A|
||Drain current (continuous) at Tcase= 100 °C|||
|IDM<br>_(2)_|Drain current (pulsed)|-48|A|
|PTOT|Total dissipation at Tcase= 25 °C|33|W|
|EAS<br>_(3)_|Singlepulse avalanche energy|210|mJ|
|Tstg|Storage temperature|–55 to 150|°C|
|Tj|Maximum operating junction temperature|150|°C|



## **Notes:** 

- (1) Limited by wire bonding 

- (2) Pulse width is limited by safe operating area. 

(3) starting Tj = 25 °C, IAS =-6 A, VDD = -25 V, Vgs = -10 V . 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|3.75|°C/W|
|Rthj-pcb<br>_(1)_|Thermal resistancejunction-pcb|50||



## **Notes:** 

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= -250 µA|-30|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= -30 V|||-1|µA|
|||VGS= 0 V, VDS= -30 V,<br>Tcase= 125 °C|||-10||
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±18 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= -250µA|-1||-2.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= -10 V, ID= -6 A||0.027|0.03|Ω|
|||VGS= -4.5 V, ID= -6 A||0.038|0.05|Ω|



**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= -25 V, f = 1 MHz, VGS= 0 V|-|1480|-|pF|
|Coss|Output<br>capacitance||-|170|-||
|Crss|Reverse transfer<br>capacitance||-|125|-||
|Qg|Totalgate charge|VDD= -15 V, ID= -12 A, VGS= -10 V<br>(see_Figure 14: "Gate charge test_<br>_circuit"_)|-|29|-|nC|
|Qgs|Gate-source<br>charge||-|4.7|-||
|Qgd|Gate-drain charge||-|5.6|-||



**Table 6: Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay<br>time|VDD= -15 V, ID= -6 A RG= 4.7 Ω,<br>VGS= -10 V (see_Figure 13: "Switching_<br>_times test circuit for resistive load"_)|-|10|-|ns|
|tr|Rise time||-|7.9|-||
|td(off)|Turn-off delay<br>time||-|41.5|-||
|tf|Fall time||-|6.9|-||



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**Electrical characteristics** 

**Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain<br>current||-||-12|A|
|ISDM<br>_(1)_|Source-drain<br>current<br>(pulsed)||-||-48|A|
|VSD<br>_(2)_|Forward on<br>voltage|VGS= 0 V, ISD= -12 A|-||-1.3|V|
|trr|Reverse<br>recoverytime|ISD= -12 A, di/dt = 100 A/µs, VDD= -24 V<br>(see_Figure 15: "Test circuit for inductive_<br>_load switching and diode recovery times"_)|-|17.8||ns|
|Qrr|Reverse<br>recovery<br>charge||-|10.2||nC|
|IRRM|Reverse<br>recovery<br>current||-|-1.2||A|



## **Notes:** 

(1) Pulse width is limited by safe operating area. 

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.2 Electrical characteristics (curves)** 

**==> picture [386 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>Figure 2: Safe operating area<br>**----- End of picture text -----**<br>


**==> picture [387 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5: Transfer characteristics<br>Figure 4: Output characteristics<br>**----- End of picture text -----**<br>


**==> picture [395 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Gate charge vs gate-source  Figure 7: Static drain-source on-resistance<br>voltage<br>**----- End of picture text -----**<br>


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**STD28P3LLH6AG Electrical characteristics** 

**==> picture [380 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Normalized gate threshold voltage vs<br>Figure 8: Capacitance variations  temperature<br>**----- End of picture text -----**<br>


**==> picture [369 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Normalized V(BR)DSS vs<br>Figure 10: Normalized on-resistance vs<br>temperature<br>temperature<br>**----- End of picture text -----**<br>


## **Figure 12: Source-drain diode forward characteristics** 

For the P-channel Power MOSFET, current and voltage polarities are reversed. 

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**Test circuits** 

## **3** 

## **Test circuits** 

**Figure 13: Switching times test circuit for Figure 14: Gate charge test circuit resistive load** 

**==> picture [164 x 80] intentionally omitted <==**

**==> picture [179 x 72] intentionally omitted <==**

**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**==> picture [215 x 126] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 16: DPAK (TO-252) type A package outline** 

**==> picture [408 x 395] intentionally omitted <==**

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**Package information** 

**Table 8: DPAK (TO-252) type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

**Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [417 x 286] intentionally omitted <==**

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**Package information** 

## **4.2 DPAK (TO-252) packing information** 

**Figure 18: DPAK (TO-252) tape outline** 

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**Package information** 

**Figure 19: DPAK (TO-252) reel outline** 

**Table 9: DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Sep-2015|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/std28p3llh6ag/mosfet-aec-q101-p-ch-30v-12a-33w/dp/3132723)
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