# Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807187RL/)

**URL**: https://novapart.co/products/STD25NF20/power-mosfet-n-channel-200-v-18-a-01-ohm-to-252
**SKU**: STD25NF20
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7260
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET |
| Qualification | AEC-Q101 |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807187RL/)

## **STD25NF20** 

Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET™ Power MOSFET in a DPAK package 

**Datasheet** - **production data** 

## **Features** 

**==> picture [56 x 53] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK<br>**----- End of picture text -----**<br>


|**Order code**|**VDS**|**RDS(on)**<br>**max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD25NF20|200 V|0.125Ω|18 A|110 W|



- Designed for automotive applications and AEC-Q101 qualified 

- Extremely low gate charge 

- Exceptional dv/dt capability 

- Low gate input resistance 

- 100% avalanche tested 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

## **Description** 

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD25NF20|25NF20|DPAK|Tape and reel|



_www.st.com_ 

May 2015 

DocID024372 Rev 3 

1/16 

This is information on a product in full production. 

**Contents** 

**STD25NF20** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>DPAK (TO-252) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|200|V|
|VGS|Gate-source voltage|±20||
|ID|Drain current (continuous) at TC= 25 °C|18|A|
||Drain current (continuous) at TC= 100 °C|11||
|IDM<br>(1)|Drain current (pulsed)|72|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤ 18 A, di/dt ≤ 200 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case|1.38|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb|50(1)||



1. When mounted on 1 inch[2] FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (pulse<br>width limited by Tjmax)|18|A|
|EAS|Single pulse avalanche energy (starting Tj=25°C,<br>ID= IAR; VDD=50 V)|110|mJ|



DocID024372 Rev 3 

3/16 

**STD25NF20** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. Static** 

|||**Table 5. Static**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|200|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 200 V|||1|µA|
|||VDS= 200 V, TC=125 °C|||50|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 10 A||0.10|0.125|Ω|



## **Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|940||pF|
|Coss|Output capacitance||-|197||pF|
|Crss|Reverse transfer<br>capacitance||-|30||pF|
|Qg|Total gate charge|VDD= 160 V, ID= 20 A,<br>VGS= 10 V<br>(see_Figure 13_)|-|28|39|nC|
|Qgs|Gate-source charge||-|5.6||nC|
|Qgd|Gate-drain charge||-|14.5||nC|



**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 100 V, ID= 10 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 14_and_Figure 17_)|-|15|-|ns|
|tr(v)|Voltage rise time||-|30|-|ns|
|td(off)|Turn-off-delay time||-|40|-|ns|
|tf(i)|Fall time||-|10|-|ns|



4/16 

DocID024372 Rev 3 

**STD25NF20** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||18|A|
|ISDM (1)|Source-drain current (pulsed)||-||72|A|
|VSD (2)|Forward on voltage|ISD= 20 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 50 V (see_Figure 17_)|-|155||ns|
|Qrr|Reverse recovery charge||-|775||nC|
|IRRM|Reverse recovery current||-|10||A|
|trr|Reverse recovery time|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 50 V, Tj= 150 °C<br>(see_Figure 17_)|-|183||ns|
|Qrr|Reverse recovery charge||-|1061||nC|
|IRRM|Reverse recovery current||-|11.6||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID024372 Rev 3 

5/16 

**STD25NF20** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**==> picture [206 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID a AM15627v1<br>(A)<br>eel<br>a ||<br>100 A000<br>10µs<br>Ell LAIN LUTTEIN TTT 100µs<br>10<br>aN<br>+ nN ytZOE tt EE NSHEhe NE| 1ms<br>1 Pri Tc=25°C Tj=175°C mail 10ms<br>Single<br>PE pulse as<br>0.1 PT ETT all<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance** 

6/16 

DocID024372 Rev 3 

**STD25NF20** 

**Electrical characteristics** 

**Figure 8. Capacitance variations Figure 9. Source-drain diode forward characteristics** 

**==> picture [462 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM03982v1<br>(V) °<br>TJ=-50 C<br>0.9<br>TJ=25°C<br>0.8<br>0.7<br>TJ=175°C<br>0.6<br>0.5<br>3 6 9 12 15 18 ISD(A)<br>Figure 10. Normalized gate threshold voltage vs  Figure 11. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM03980v1 RDS(on) AM03981v1<br>(norm) (norm)<br>2.4<br>1.10<br>2.2<br>1.00<br>2.0<br>0.90<br>1.8<br>0.80 1.6<br>0.70 1.4<br>1.2<br>0.60<br>1.0<br>0.50<br>0.8<br>0.40 0.6<br>-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


DocID024372 Rev 3 

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**STD25NF20** 

**Test circuits** 

## **3 Test circuits** 

**Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform<br>�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**STD25NF20** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

DocID024372 Rev 3 

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**STD25NF20** 

**Package information** 

## **4.1 DPAK (TO-252) package information** 

**==> picture [238 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. DPAK (TO-252) type A2 package outline<br>**----- End of picture text -----**<br>


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DocID024372 Rev 3 

**STD25NF20** 

**Package information** 

**Table 9. DPAK (TO-252) type A2 mechanical data** 

||**Table 9. DPAK(TO-252) type A2 mechanical data**|**Table 9. DPAK(TO-252) type A2 mechanical data**|**Table 9. DPAK(TO-252) type A2 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



DocID024372 Rev 3 

11/16 

**STD25NF20** 

**Package information** 

## **Figure 19. DPAK (TO-252) recommended footprint[(a)]** 

**==> picture [405 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
��������������<br>**----- End of picture text -----**<br>


- a. All dimensions are in millimeters 

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**STD25NF20** 

**Package information** 

## **4.2 Packing information** 

## **Figure 20. Tape outline for DPAK (TO-252)** 

DocID024372 Rev 3 

13/16 

**STD25NF20** 

**Package information** 

## **Figure 21. Reel outline for DPAK (TO-252)** 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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DocID024372 Rev 3 

**STD25NF20** 

**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Mar-2013|1|First release.|
|03-Sep-2013|2|– Modified: title and_Features_in cover page<br>– Modified:_Figure 12_,_13_,_14_and_15_<br>– Minor text changes|
|27-May-2015|3|Text and formatting changes throughout document.<br>In_Section 1: Electrical ratings_:<br>- updated_Table 2_and_Table 3_<br>In_Section 1: Electrical ratings_:<br>- updated_Table 8_<br>In_Section 2.1: Electrical characteristics (curves)_:<br>- updated_Figure 4_and_Figure 5_<br>Updated_Section 4: Package information_|



DocID024372 Rev 3 

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**STD25NF20** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

16/16 DocID024372 Rev 3 



## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/std25nf20/mosfet-aec-q101-n-ch-200v-to-252/dp/2807187RL)
---

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