# Power MOSFET, N Channel, 100 V, 12.5 A, 0.033 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1752025/)

**URL**: https://novapart.co/products/STD25NF10T4/power-mosfet-n-channel-100-v-125-a-0033-ohm-to-252
**SKU**: STD25NF10T4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4160
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 12.5A |
| Drain Source On State Resistance | 0.033ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752025/)

**STD25NF10T4** 

Datasheet 

N-channel 100 V, 33 mΩ typ., 25 A, STripFET™ II Power MOSFET in a DPAK package 

## **Features** 

**==> picture [55 x 50] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>2 3<br>&.<br>1<br>DPAK<br>**----- End of picture text -----**<br>


|**Type**|**VDS**|**RDS(on)max.**|**ID**|
|---|---|---|---|
|STD25NF10T4|100 V|38 mΩ|25 A|



- Exceptional dv/dt capability 

- 100% avalanche tested 

- Low gate charge 

**==> picture [127 x 108] intentionally omitted <==**

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D(2, TAB)<br>G(1)<br>S(3)<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

## **Product status link** ~~ea~~ 

|**Product summary**<br>~~Saas~~|**Product summary**<br>~~Saas~~|
|---|---|
|**Order code**|STD25NF10T4|
|**Marking**|D25NF10|
|**Package**|DPAK|
|**Packing**|Tape and reel|



**DS2063** - **Rev 5** - **August 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD25NF10T4 Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|100|V|
|VDGR|Gate-source voltage (RGS= 20 kΩ)|100|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at TC= 25 °C|25|A|
||Drain current (continuous) at TC= 100 °C|21|A|
|IDM(1)|Drain current (pulsed)|100|A|
|PTOT|Total dissipation at TC= 25 °C|100|W|
|EAS(2)|Single-pulse avalanche energy|480|mJ|
|dv/dt(3)|Peak diode recovery voltage slope|13|V/ns|
|Tstg|Storage temperature range|-55 to 175|°C|
|Tj|Operating junction temperature range|||



_1. Pulse width limited by safe operating area._ 

_2. Starting TJ = 25 °C, ID = 12.5 A, VDD = 50 V_ 

_3. ISD ≤ 25 A, di/dt ≤ 300 A/μs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.5|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50|°C/W|



_1. When mounted on an FR-4 board of 1 inch², 2 oz Cu._ 

**DS2063** - **Rev 5** 

**page 2/18** 

**STD25NF10T4 Electrical characteristics** 

**2 Electrical characteristics** 

TCASE = 25 °C unless otherwise specified 

## **Table 3. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|100|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 100 V|||1|µA|
|||VGS= 0 V, VDS= 100 V,<br>TC= 125 °C(1)|||10|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDD= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 12.5 A||33|38|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|1550|-|pF|
|Coss|Output capacitance||-|220|-|pF|
|Crss|Reverse transfer capacitance||-|95|-|pF|
|Qg|Total gate charge|VDD= 80 V, ID= 25 A,<br>VGS= 0 to 10 V<br>(seeFigure 12. Test circuit for gate<br>charge behavior)|-|55|-|nC|
|Qgs|Gate-source charge||-|12|-|nC|
|Qgd|Gate-drain charge||-|20|-|nC|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 50 V, ID= 12.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 11. Test circuit for<br>resistive load switching timesand<br>Figure 16. Switching time<br>waveform)|-|17|-|ns|
|tr|Rise time||-|60|-|ns|
|td(off)|Turn-off delay time||-|60|-|ns|
|tf|Fall time||-|15|-|ns|



## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||25|A|
|ISDM(1)|Source-drain current (pulsed)||-||100|A|
|VSD(2)|Forward on voltage|ISD= 25 A, VGS= 0 V|-||1.5|V|



**DS2063** - **Rev 5** 

**page 3/18** 

**STD25NF10T4 Electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recovery time|ISD= 25 A, di/dt = 100 A/µs,<br>VDD= 50 V, TJ= 150 °C<br>(seeFigure 16. Switching time<br>waveform)|-|88||ns|
|Qrr|Reverse recovery charge||-|317||nC|
|IRRM|Reverse recovery current||-|7.2||A|



_1. Pulse width limited by safe operating area_ 

_2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%_ 

**DS2063** - **Rev 5** 

**page 4/18** 

**STD25NF10T4 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area** 

**==> picture [184 x 171] intentionally omitted <==**

**Figure 3. Output characteristics** 

**==> picture [173 x 165] intentionally omitted <==**

**Figure 2. Thermal impedance** 

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**Figure 4. Transfer characteristics** 

**==> picture [170 x 169] intentionally omitted <==**

**DS2063** - **Rev 5** 

**page 5/18** 

**STD25NF10T4 Electrical characteristics (curves)** 

**Figure 5. Gate charge vs gate-source voltage** 

**==> picture [181 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS = 80 V<br>ID = 25 A<br>**----- End of picture text -----**<br>


**Figure 7. Source-drain diode forward characteristics** 

**==> picture [180 x 167] intentionally omitted <==**

**Figure 9. Normalized gate threshold voltage vs temperature** 

**==> picture [182 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
-100<br>**----- End of picture text -----**<br>


**Figure 6. Static drain-source on-resistance** 

**==> picture [177 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>34<br>33<br>32<br>31<br>**----- End of picture text -----**<br>


**Figure 8. Capacitance variations** 

**==> picture [179 x 167] intentionally omitted <==**

**Figure 10. Normalized on-resistance vs temperature** 

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**----- Start of picture text -----**<br>
-100<br>**----- End of picture text -----**<br>


**DS2063** - **Rev 5** 

**page 6/18** 

**STD25NF10T4 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Test circuit for inductive load switching and<br>Figure 14. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Switching time waveform<br>Figure 15. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS2063** - **Rev 5** 

**page 7/18** 

**STD25NF10T4 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS2063** - **Rev 5** 

**page 8/18** 

**STD25NF10T4 DPAK (TO-252) type A package information** 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 17. DPAK (TO-252) type A package outline** 

**==> picture [34 x 40] intentionally omitted <==**

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**----- Start of picture text -----**<br>
0068772_A_25<br>**----- End of picture text -----**<br>


**DS2063** - **Rev 5** 

**page 9/18** 

**STD25NF10T4 DPAK (TO-252) type A package information** 

**Table 7. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS2063** - **Rev 5** 

**page 10/18** 

**STD25NF10T4 DPAK (TO-252) type C2 package information** 

- **4.2 DPAK (TO-252) type C2 package information** 

**Figure 18. DPAK (TO-252) type C2 package outline** 

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**==> picture [33 x 34] intentionally omitted <==**

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**----- Start of picture text -----**<br>
0068772_C2_25<br>**----- End of picture text -----**<br>


**DS2063** - **Rev 5** 

**page 11/18** 

**STD25NF10T4 DPAK (TO-252) type C2 package information** 

**Table 8. DPAK (TO-252) type C2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS2063** - **Rev 5** 

**page 12/18** 

**STD25NF10T4 DPAK (TO-252) type C2 package information** 

**Figure 19. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [111 x 196] intentionally omitted <==**

FP_0068772_25 

**DS2063** - **Rev 5** 

**page 13/18** 

**STD25NF10T4 DPAK (TO-252) packing information** ~~To~~ 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 20. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS2063** - **Rev 5** 

**page 14/18** 

**STD25NF10T4 DPAK (TO-252) packing information** 

**Figure 21. DPAK (TO-252) reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 9. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS2063** - **Rev 5** 

**page 15/18** 

**STD25NF10T4** 

## **Revision history** 

**Table 10. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|21-Jun-2004|3|Preliminary version|
|03-Jul-2006|4|New template, no content change|
|09-Aug-2018|5|Updated information on cover page.<br>UpdatedSection 4 Package information.<br>Minor text changes|



**DS2063** - **Rev 5** 

**page 16/18** 

**STD25NF10T4 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**|DPAK (TO-252) type C2 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**4.3**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16**|



**DS2063** - **Rev 5** 

**page 17/18** 

**STD25NF10T4** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS2063** - **Rev 5** 

**page 18/18** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD25NF10T4/power-mosfet-n-channel-100-v-125-a-0033-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std25nf10t4/mosfet-n-ch-100v-25a-dpak/dp/1752025)
---

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