# Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:9935371/)

**URL**: https://novapart.co/products/STD20NF06LT4/power-mosfet-n-channel-60-v-24-a-004-ohm-to-252
**SKU**: STD20NF06LT4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4010
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935371/)

**==> picture [58 x 36] intentionally omitted <==**

## **STD20NF06L** 

## N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STri FET™ II POWER MOSFET p 

## **Table 1: General Features** 

|**Table 1: General**|**Features**|||
|---|---|---|---|
|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|STD20NF06L<br>STD20NF06L-1|60 V<br>60 V|< 0.040Ω<br>< 0.040Ω|24 A<br>24 A|



- TYPICAL RDS(on) = 0.032 Ω 

- EXCEPTIONAL dv/dt CAPABILITY 

- 100% AVALANCHE TESTED 

- APPLICATION ORIENTED 

   - CHARACTERIZATION 

- SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 

## **DESCRIPTION** 

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **APPLICATIONS** 

- POWER TOOLS 

- AUTOMOTIVE ENVIRONMENT 

## **Figure 1:Package** 

**==> picture [221 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>3<br>2 1<br>1<br>IPAK DPAK<br>TO-251 TO-252<br>(Suffix “-1”) (Suffix “T4”)<br>**----- End of picture text -----**<br>


## **Figure 2: Internal Schematic Diagram** 

**==> picture [74 x 93] intentionally omitted <==**

## **Table 2: Ordering Information** 

|**SALES TYPE**|**MARKING**|**PACKAGE**|**PACKAGING**|
|---|---|---|---|
|STD20NF06L|D20NF06L|TO-252|TAPE & REEL|
|STD20NF06L-1|D20NF06L|TO-251|TUBE|



## **Table 3:ABSOLUTE MAXIMUM RATINGS** 

|**Table 3:ABS**|**OLUTE MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source Voltage (VGS= 0)|60|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|60|V|
|VGS|Gate- source Voltage|± 18|V|
|ID|Drain Current (continuous) at TC= 25°C|24|A|
|ID|Drain Current (continuous) at TC= 100°C|17|A|
|IDM(•)|Drain Current (pulsed)|96|A|
|Ptot|Total Dissipation at TC= 25°C|60|W|
||Derating Factor|0.4|W/°C|
|dv/dt(1)|Peak Diode Recovery voltage slope|10|V/ns|
|EAS(2)|Single Pulse Avalanche Energy|225|mJ|
|Tstg|Storage Temperature|-55 to 175|°C|
|Tj|Operating Junction Temperature|||



(•) Pulse width limited by safe operating area. 

Rev. 2 

April 2005 

1/11 

**STD20NF06L** 

## **Table 4: THERMAL DATA** 

|Rthj-case<br>Rthj-pcb<br>Tl|Thermal Resistance Junction-case<br>(*)Thermal Resistance Junction-PCB<br>Maximum Lead Temperature For Soldering Purpose<br>(1.6 mm from case, for 10 sec)<br>Max<br>Max|2.5<br>50<br>275|°C/W<br>°C/W<br>°C|
|---|---|---|---|



(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu 

## **ELECTRICAL CHARACTERISTICS** (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) **Table 5: OFF** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|60|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating TC= 125°C|||1<br>10|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 18 V|||±100|nA|
|**Table 6:ON (*)**|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS<br>ID= 250 µA|1|||V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10 V<br>ID= 12 A<br>VGS= 5 V<br>ID= 12 A||0.032|0.040<br>0.050|Ω<br>Ω|



## **Table 7: DYNAMIC** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs(*)|Forward Transconductance|VDS= 25 V<br>ID= 12 A||20||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V  f = 1 MHz  VGS= 0||660<br>170<br>70||pF<br>pF<br>pF|



2/11 

**STD20NF06L** 

## **ELECTRICAL CHARACTERISTICS** (continued) 

## **Table 8: SWITCHING ON** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**<br>**Max.**|**Unit**|
|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time<br>V<br><br>(R|DD= 30 V<br>ID= 1<br>RG= 4.7Ω<br>VGS=<br>esistive Load, Figure 17|0 A<br>5 V<br>)|11<br>50|ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge<br>V|DD= 30 V ID= 20 A VGS=|10 V|13<br>3.5<br>8|nC<br>nC<br>nC|



## **Table 9: SWITCHING OFF** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**<br>**Max.**|**Unit**|
|---|---|---|---|---|---|
|td(off)<br>tf|Turn-off Delay Time<br>Fall Time<br>V<br>R<br>(R|DD= 30 V<br>ID= 1<br>G= 4.7Ω,<br>VGS= 5<br>esistive Load, Figure 17|0 A<br>V<br>)|20<br>12|ns<br>ns|



## **Table 10: SOURCE DRAIN DIODE** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**<br>**Max.**|**Unit**|
|---|---|---|---|---|---|
|ISD<br>ISDM (•)|Source-drain Current<br>Source-drain Current (pulsed)|||24<br>96|A<br>A|
|VSD (*)|Forward On Voltage<br>IS|D= 20 A           VGS= 0||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current<br>IS<br>V<br>(s|D= 20 A<br>di/dt = 100<br>DD= 20 V<br>Tj= 150<br>ee test circuit, Figure 19)|A/µs<br>°C<br>|56<br>108<br>4|ns<br>nC<br>A|



(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

(•)Pulse width limited by safe operating area. 

**Figure 3:** Safe Operating Area 

**==> picture [220 x 227] intentionally omitted <==**

**Figure 4:** Thermal Impedance 

**==> picture [217 x 207] intentionally omitted <==**

3/11 

**STD20NF06L** 

**Figure 5:** Output Characteristics 

**Figure 7:** Transconductance 

**Figure 9:** Gate Charge vs Gate-source Voltage 

**Figure 6:** Transfer Characteristics 

**Figure 8:** Static Drain-source On Resistance 

**Figure 10:** Capacitance Variations 

4/11 

**STD20NF06L** 

**Figure 11:** Normalized Gate Threshold Voltage vs Temperature 

**Figure 13:** Source-drain Diode Forward Characteristics 

**Figure 12:** Normalized on Resistance vs Temperature 

**==> picture [220 x 203] intentionally omitted <==**

**Figure 14:** Normalized Breakdown Voltage vs Temperature. 

. 

. 

5/11 

**STD20NF06L** 

**Figure 15:** Unclamped Inductive Load Test Circuit 

**==> picture [214 x 163] intentionally omitted <==**

**Figure 17:** Switching Times Test Circuits For Resistive Load 

**==> picture [200 x 121] intentionally omitted <==**

**Figure 16:** Unclamped Inductive Waveform 

**==> picture [214 x 163] intentionally omitted <==**

**Figure 18:** Gate Charge test Circuit 

**==> picture [214 x 147] intentionally omitted <==**

**Figure 19:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [202 x 118] intentionally omitted <==**

6/11 

**STD20NF06L** 

## **TO-252 (DPAK) MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.2||2.4|0.086||0.094|
|A1|0.9||1.1|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|B|0.64||0.9|0.025||0.035|
|B2|5.2||5.4|0.204||0.212|
|C|0.45||0.6|0.017||0.023|
|C2|0.48||0.6|0.019||0.023|
|D|6||6.2|0.236||0.244|
|E|6.4||6.6|0.252||0.260|
|G|4.4||4.6|0.173||0.181|
|H|9.35||10.1|0.368||0.397|
|L2||0.8|||0.031||
|L4|0.6||1|0.023||0.039|



**==> picture [379 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
H<br>DETAIL "A"<br>L2 D<br>DETAIL "A"<br>L4<br>0068772-B<br>A<br>C2  A1<br>C<br>A2<br>B<br>3<br>= = =<br>E  B2  2  G<br>= = =<br>1<br>**----- End of picture text -----**<br>


7/11 

**STD20NF06L** 

## **TO-251 (IPAK) MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.2||2.4|0.086||0.094|
|A1|0.9||1.1|0.035||0.043|
|A3|0.7||1.3|0.027||0.051|
|B|0.64||0.9|0.025||0.031|
|B2|5.2||5.4|0.204||0.212|
|B3|||0.85|||0.033|
|B5||0.3|||0.012||
|B6|||0.95|||0.037|
|C|0.45||0.6|0.017||0.023|
|C2|0.48||0.6|0.019||0.023|
|D|6||6.2|0.236||0.244|
|E|6.4||6.6|0.252||0.260|
|G|4.4||4.6|0.173||0.181|
|H|15.9||16.3|0.626||0.641|
|L|9||9.4|0.354||0.370|
|L1|0.8||1.2|0.031||0.047|
|L2||0.8|1||0.031|0.039|



**==> picture [358 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
H<br>L2 D L<br>L1<br>0068771-E<br>C<br>A<br>C2  A3<br>A1<br>B3  B6<br>B  B5<br>3<br>= = =<br>E  B2  2  G<br>= = =<br>1<br>**----- End of picture text -----**<br>


8/11 

**STD20NF06L** 

*on sales type 

9/11 

**STD20NF06L** 

**Table 11:Revision History** 

|**Date**|**Revision**|**Description of Changes**|
|---|---|---|
|Friday 15 April 2005|1.0|FIRST ISSUE|
|April 2005|2.0|ADDED PACKAGE IPAK|



10/11 

**STD20NF06L** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. 

- © 2005 STMicroelectronics - All Rights Reserved 

STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. 

**www.st.com** 

11/11 



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