# Power MOSFET, N Channel, 30 V, 10 A, 0.025 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2807186/)

**URL**: https://novapart.co/products/STD19N3LLH6AG/power-mosfet-n-channel-30-v-10-a-0025-ohm-to-252
**SKU**: STD19N3LLH6AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET H6 |
| Qualification | AEC-Q101 |
| Power Dissipation | 30W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 30W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.025ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.025ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807186/)

## **STD19N3LLH6AG** 

Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package 

Datasheet - production data 

## **Features** 

|**Order code**<br>~~{|~~|**VDS**<br>~~{||_|~~|**RDS(on)**<br>**max.**<br>~~|_|~~|**ID**<br>~~|_| |~~|**PTOT**<br>~~|~~|
|---|---|---|---|---|
|STD19N3LLH6AG<br>~~{|~~|30 V<br>~~{||_|~~|33 mΩ<br>~~|_|~~|10 A<br>~~|_| |~~|30 W<br>~~|~~|



- Designed for automotive applications and AEC-Q101 qualified 

- Very low on-resistance 

- Very low gate charge 

**Figure 1: Internal schematic diagram** 

- High avalanche ruggedness 

- Low gate drive power loss 

- Logic level 

## **Applications** 

- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD19N3LLH6AG|19N3LLH6|DPAK|Tape and reel|



This is information on a product in full production. 

_www.st.com_ 

October 2015 

DocID028432 Rev 2 

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|**Contents**<br>**STD19N3LLH6AG**|**Contents**<br>**STD19N3LLH6AG**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>DPAK (TO-252) type A package information..................................... 9|
||4.2<br>DPAK (TO-252) packing information ............................................... 12|
|**5**|**Revision history ............................................................................ 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at Tcase= 25 °C_(1)_|10|A|
||Drain current (continuous) at Tcase= 100 °C|10||
|IDM_(2)_|Drain current (pulsed)|40|A|
|PTOT|Total dissipation at Tcase= 25 °C|30|W|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Operating junction temperature|||



## **Notes:** 

(1) Current limited by package. At Tcase = 25 °C the silicon is able to sustain 22 A. 

(2) Pulse width limited by safe operating area. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|5|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|50||



## **Notes:** 

(1)When mounted on a 1-inch² FR-4, 2 Oz copper board. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAV_(1)_|Avalanche current, repetitive or not repetitive|10|A|
|EAS_(2)_|Single pulse avalanche energy|130|mJ|



## **Notes:** 

- (1) Pulse width limited by Tjmax. 

(2) starting Tj = 25 °C, ID = IAV, VDD = 25 V. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 5: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0 V, ID= 250 µA|30|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 30 V|||1|µA|
|||VGS= 0 V, VDS= 30 V,<br>Tcase= 125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|1||2.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 5 A||25|33|mΩ|
|||VGS= 4.5 V, ID= 5 A||33|50||



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|321|-|pF|
|Coss|Output capacitance||-|68|-||
|Crss|Reverse transfer<br>capacitance||-|34|-||
|Qg|Totalgate charge|VDD= 15 V, ID= 10 A,<br>VGS= 4.5 V (see_Figure 14:_<br>_"Test circuit for gate charge_<br>_behavior"_)|-|3.7|-|nC|
|Qgs|Gate-source charge||-|1|-||
|Qgd|Gate-drain charge||-|1.7|-||



**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Uni**<br>**t**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 15 V, ID= 5 A<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 13: "Test circuit for_<br>_resistive load switching times"_<br>and_Figure 18: "Switching time_<br>_waveform"_)|-|2.4|-|ns|
|tr|Rise time||-|2.5|-||
|td(off)|Turn-off delaytime||-|12.8|-||
|tf|Fall time||-|2.5|-||



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**Electrical characteristics** 

**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||10|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||40|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 10 A|-||1.12|V|
|trr|Reverse recoverytime|ISD= 10 A, di/dt = 100 A/µs,<br>VDD= 24 V (see_Figure 15:_<br>_"Test circuit for inductive load_<br>_switching and diode recovery_<br>_times"_)|-|15.1||ns|
|Qrr|Reverse recovery<br>charge||-|7.5||nC|
|IRRM|Reverse recovery<br>current||-|1||A|



## **Notes:** 

(1) Pulse width is limited by safe operating area. 

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**STD19N3LLH6AG** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [416 x 354] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area  Figure 3: Thermal impedance<br>Figure 4: Output characteristics  Figure 5: Transfer characteristics<br>**----- End of picture text -----**<br>


**==> picture [409 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Gate charge vs gate-source voltage  Figure 7: Static drain-source on-resistance<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [385 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Normalized gate threshold voltage<br>Figure 8: Capacitance variations<br>vs temperature<br>**----- End of picture text -----**<br>


**==> picture [398 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Normalized on-resistance vs  Figure 11: Normalized V(BR)DSS vs<br>temperature  temperature<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

**==> picture [157 x 142] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 561] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load  Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 19: DPAK (TO-252) type A package outline** 

**==> picture [408 x 395] intentionally omitted <==**

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**Package information** 

**Table 9: DPAK (TO-252) type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



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**Package information** 

**Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [417 x 286] intentionally omitted <==**

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**Package information** 

## **4.2 DPAK (TO-252) packing information** 

**Figure 21: DPAK (TO-252) tape outline** 

~~©~~ 12/15 DocID028432 Rev 2 ~~2~~ 

**STD19N3LLH6AG** 

**Package information** 

**Figure 22: DPAK (TO-252) reel outline** 

**Table 10: DPAK (TO-252) tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Revision history** 

## **5 Revision history** 

||**Table 11: Document revision history**|**Table 11: Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|01-Oct-2015|1|Initial version|
|13-Oct-2015|2|On cover page:<br>- updated title<br>In section Electrical characteristics:<br>-  updated table Dynamic<br>Updated section Test circuits|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STD19N3LLH6AG/power-mosfet-n-channel-30-v-10-a-0025-ohm-to-252)
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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/std19n3llh6ag/mosfet-aec-q101-n-ch-30v-to-252/dp/2807186)
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