# Power MOSFET, N Channel, 250 V, 17 A, 0.14 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3132722RL/)

**URL**: https://novapart.co/products/STD18NF25/power-mosfet-n-channel-250-v-17-a-014-ohm-to-252
**SKU**: STD18NF25
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8660
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II |
| Qualification | AEC-Q101 |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.14ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132722RL/)

**STB18NF25, STD18NF25** 

Datasheet 

Automotive-grade N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power  MOSFETs in D[2] PAK and DPAK packages 

## **Features** 

**==> picture [109 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>2 3<br>2<br>1<br>& 3 e<br>1<br>D [2] PAK DPAK<br>D(2, TAB)<br>G(1)<br>S(3)<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


|**Order codes**<br>~~a~~|**VDS**|**RDS(on)max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB18NF25<br>~~a~~|250 V|0.165 Ω|17 A|110 W|
|STD18NF25<br>~~a~~|||||



- AEC-Q101 qualified 

- Exceptional dv/dt capability 

- 100% avalanche tested 

- Low gate charge 

## **Applications** 

- Switching applications 

## **Description** 

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

## **Product status** ~~nn~~ 

**Product status** STB18NF25 STD18NF25 

**DS6601** - **Rev 5** - **May 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STB18NF25, STD18NF25 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|250|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at TC= 25 °C|17|A|
|ID|Drain current (continuous) at TC= 100 °C|12|A|
|IDM (1)|Drain current (pulsed)|68|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|dv/dt(2)|Peak diode recovery voltage slope|10|V/ns|
|Tj|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS._ 

## **Table 2. Thermal data** 

|**Sbl**|**P**|**Value**|**Value**|**Ui**|
|---|---|---|---|---|
|**ymo**|**arameter**|**D2PAK**|**DPAK**|**nt**|
|Rthj-case|Thermal resistance junction-case|1.36||°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb|30|50|°C/W|



_1. When mounted on 1 inch² FR-4, 2 Oz copper board._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tjmax)|17|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|170|mJ|



**DS6601** - **Rev 5** 

**page 2/22** 

**STB18NF25, STD18NF25 Electrical characteristics** 

## **2** 

## **Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|ID= 1 mA, VGS= 0 V|250|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 250 V|||1|µA|
|||VGS= 0 V, VDS= 250 V,<br>TC= 125 °C(1)|||10|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on resistance|VGS= 10 V, ID= 8.5 A||0.140|0.165|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|1000|-|pF|
|Coss|Output capacitance|||178|||
|Crss|Reverse transfer capacitance|||28|||
|Co(tr) (1)|Equivalent capacitance time related|VDS= 0 to 200 V, VGS= 0 V|-|106|-|pF|
|Co(er) (2)|Equivalent capacitance<br>energy related|||79|-||
|Rg|Gate input resistance|f = 1 MHz, ID=0 A|-|2|-|Ω|
|Qg|Total gate charge|VDD= 200 V, ID= 17 A,<br>VGS= 0 to 10 V<br>(seeFigure 16. Test circuit for<br>gate charge behavior)|-|29.3|-|nC|
|Qgs|Gate-source charge|||4.5|-||
|Qgd|Gate-drain charge|||14.4|||



_1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS._ 

_2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 125 V, ID= 8.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 15. Test circuit for<br>resistive load switching times<br>andFigure 20. Switching time<br>waveform)|-|10.2|-|ns|
|tr|Rise time|||16.5|||
|td(off)|Turn-off delay time|||31.5|||
|tf|Fall time|||9.8|||



**DS6601** - **Rev 5** 

**page 3/22** 

**STB18NF25, STD18NF25 Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||17|A|
|ISDM (1)|Source-drain current (pulsed)||||68||
|VSD (2)|Forward on voltage|ISD= 17 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery time|ISD= 17 A, di/dt = 100 A/µs<br>VDD= 60 V<br>(seeFigure 17. Test circuit for<br>inductive load switching and<br>diode recovery times)|-|147||ns|
|Qrr|Reverse recovery charge|||0.8||μC|
|IRRM|Reverse recovery current|||10.6||A|
|trr|Reverse recovery time|ISD= 17 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(seeFigure 17. Test circuit for<br>inductive load switching and<br>diode recovery times)|-|180||ns|
|Qrr|Reverse recovery charge|||1.1||μC|
|IRRM|Reverse recovery current|||12||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._ 

**DS6601** - **Rev 5** 

**page 4/22** 

**STB18NF25, STD18NF25 Electrical characteristics curves** 

## **2.1 Electrical characteristics curves** 

**Figure 1. Safe operating area for D[2] PAK** 

**==> picture [181 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM05549v1<br>(A)<br>10µs<br>10<br>100µs<br>1ms<br>1 Tj=175°C 10ms<br>Tc=25°C<br>Sinlge<br>pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 2. Thermal impedance for D[2] PAK** 

**==> picture [167 x 161] intentionally omitted <==**

**Figure 3. Safe operating area for DPAK** 

**==> picture [183 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM05561v1<br>(A) Tj=175°C, Tc=25°C<br>Single pulse<br>100<br>10µs<br>10 100µs<br>1ms<br>1 10ms<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Thermal impedance for DPAK** 

**==> picture [158 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
K GC20460<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br>


**==> picture [513 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Output characterisics Figure 6. Transfer characteristics<br>AM05550v1 AM05551v1<br>ID(A) ID<br>(A)<br>45 VGS=10V VDS=10V<br>7V<br>40<br>30<br>35<br>6V<br>30<br>25 20<br>20<br>15<br>5V 10<br>10<br>5<br>0 0<br>0 10 20 VDS(V) 0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 5/22** 

**STB18NF25, STD18NF25 Electrical characteristics curves** 

**==> picture [196 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Gate charge vs gate-source voltage<br>AM05552v1<br>VGS<br>VDS<br>(V) VDD=200V (V)<br>12<br>VDS ID=17A 200<br>10<br>150<br>8<br>6<br>100<br>4<br>50<br>2<br>0 0<br>0 10 20 30 Qg(nC)<br>**----- End of picture text -----**<br>


**==> picture [183 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Static drain-source on resistance<br>**----- End of picture text -----**<br>


**==> picture [143 x 149] intentionally omitted <==**

**==> picture [513 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Output capacitance stored energy Figure 10. Capacitance variations<br>Eoss AM05554v1 C AM05555v1<br>(µJ) (pF)<br>4.0<br>3.5 1000 Ciss<br>3.0<br>2.5<br>2.0<br>100<br>1.5<br>Coss<br>1.0<br>0.5<br>Crss<br>0 10<br>0 50 100 150 200 VDS(V) 0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Normalized gate threshold voltage vs<br>Figure 12. Normalized on-resistance vs temperature<br>temperature<br>VGS(th) AM05556v1 (norm)RDS(on) AM05557v1<br>(norm)<br>2.5<br>1.10<br>1.00<br>2.0<br>0.90<br>0.80<br>1.5<br>0.70<br>0.60<br>1.0<br>0.50<br>0.40<br>0.5<br>0.30 -100 -50 0 50 100 150 TJ(°C)<br>-100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 6/22** 

**STB18NF25, STD18NF25 Electrical characteristics curves** 

**==> picture [513 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Source-drain diode forward characteristics Figure 14. Normalized V(BR)DSS vs temperature<br>VSD AM05558v1 V(BR)DSS AM05559v1<br>(V) TJ=-50°C (norm)<br>1.0<br>1.15<br>0.9<br>1.10<br>0.8<br>TJ=25°C 1.05<br>0.7<br>TJ=175°C<br>1.00<br>0.6<br>0.5 0.95<br>0.4 0.90<br>0 5 10 15 20 ISD(A) -100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 7/22** 

**STB18NF25, STD18NF25 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Test circuit for inductive load switching and<br>Figure 18. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. Switching time waveform<br>Figure 19. Unclamped inductive waveform<br>V(BR)DSS<br>ton toff<br>VD<br>td(on) tr td(off) tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD VGS 90%<br>0 10%<br>AM01472v1<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 8/22** 

**STB18NF25, STD18NF25 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS6601** - **Rev 5** 

**page 9/22** 

**STB18NF25, STD18NF25 D²PAK (TO-263) type A package information** 

## **4.1 D²PAK (TO-263) type A package information** 

**Figure 21. D²PAK (TO-263) type A package outline** 

**==> picture [67 x 44] intentionally omitted <==**

**==> picture [93 x 77] intentionally omitted <==**

**==> picture [126 x 227] intentionally omitted <==**

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_25<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 10/22** 

**STB18NF25, STD18NF25 D²PAK (TO-263) type A package information** 

**Table 8. D²PAK (TO-263) type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.30|8.50|8.70|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.40||
|V2|0°||8°|



**DS6601** - **Rev 5** 

**page 11/22** 

**STB18NF25, STD18NF25 D²PAK (TO-263) type A package information** 

**Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)** 

**==> picture [110 x 152] intentionally omitted <==**

**==> picture [24 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 12/22** 

**STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information** 

**4.2 DPAK (TO-252) type A2 package information** 

**Figure 23. DPAK (TO-252) type A2 package outline** 

**==> picture [33 x 37] intentionally omitted <==**

**==> picture [66 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_type-A2_rev25<br>**----- End of picture text -----**<br>


**DS6601** - **Rev 5** 

**page 13/22** 

**STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information** 

**Table 9. DPAK (TO-252) type A2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS6601** - **Rev 5** 

**page 14/22** 

**STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information** 

**Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [111 x 196] intentionally omitted <==**

FP_0068772_25 

**DS6601** - **Rev 5** 

**page 15/22** 

**STB18NF25, STD18NF25 D²PAK and DPAK packing information** 

## **4.3 D²PAK and DPAK packing information** 

**Figure 25. Tape outline** 

**DS6601** - **Rev 5** 

**page 16/22** 

**STB18NF25, STD18NF25 D²PAK and DPAK packing information** 

**Figure 26. Reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 10. D²PAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Base quantity||1000|
|P2|1.9|2.1|Bulk quantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



**DS6601** - **Rev 5** 

**page 17/22** 

**STB18NF25, STD18NF25 D²PAK and DPAK packing information** 

**Table 11. DPAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS6601** - **Rev 5** 

**page 18/22** 

**STB18NF25, STD18NF25 Ordering information** 

## **5 Ordering information** 

## **Table 12. Order codes** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB18NF25|18NF25|D2PAK|Tape and reel|
|STD18NF25||DPAK||



**DS6601** - **Rev 5** 

**page 19/22** 

**STB18NF25, STD18NF25** 

## **Revision history** 

**Table 13. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|16-Nov-2009|1|First release.|
|19-Feb-2010|2|VDSvalue in_Table 8_has been corrected.|
|26-Apr-2012|3|Updated EASin_Table 4: Avalanche data, Section 4: Package information_and<br>_Section 4.3: Packing information._<br>Minor text changes.|
|10-Sep-2015|4|Updated_4.2: DPAK (TO-252) package information_<br>Minor text changes.|
|07-May-2018|5|Removed maturity status indication from cover page.<br>Modified title and features on cover page.<br>ModifiedTable 5. Dynamic,Table 6. Switching timesandTable 7. Source<br>drain diode.<br>ModifiedFigure 8. Static drain-source on resistance.<br>UpdatedSection 4 Package information.<br>Minor text changes.|



**DS6601** - **Rev 5** 

**page 20/22** 

**STB18NF25, STD18NF25 Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**<br>DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
||**4.3**<br>D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20**||



**DS6601** - **Rev 5** 

**page 21/22** 

**STB18NF25, STD18NF25** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS6601** - **Rev 5** 

**page 22/22** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD18NF25/power-mosfet-n-channel-250-v-17-a-014-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std18nf25/mosfet-aec-q101-n-ch-250v-17a/dp/3132722RL)
---

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