# Power MOSFET, N Channel, 500 V, 13 A, 0.28 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3367018/)

**URL**: https://novapart.co/products/STD16N50M2/power-mosfet-n-channel-500-v-13-a-028-ohm-to-252
**SKU**: STD16N50M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6630
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.28ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367018/)

## **STD16N50M2, STF16N50M2, STP16N50M2** 

Datasheet 

N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages 

## **Features** 

**==> picture [127 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>1<br>DPAK<br>TAB 2.<br>3<br>TO-220 uN 1 [2 3] eo TO-220FP 1 2<br>D(2, TAB)<br>G(1)<br>S(3) AM01475V1<br>**----- End of picture text -----**<br>


|**Order code**<br>~~ee~~|**VDS at TJ**<br>**max.**<br>~~e~~|**RDS(on) max.**<br>~~ee~~|**ID**<br>~~ee~~|**Packages**<br>~~ee~~|
|---|---|---|---|---|
|STD16N50M2<br>~~ee~~|550 V<br>~~e ~~|0.28 Ω<br> ~~ee~~|13 A<br>~~ee~~|DPAK<br>~~ee~~|
|STF16N50M2||||TO-220FP|
|STP16N50M2||||TO-220|



- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. 

## **Product status link** ~~eee~~ 

**Product status link** STD16N50M2 STF16N50M2 STP16N50M2 

**DS10450** - **Rev 6** - **December 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD16N50M2, STF16N50M2, STP16N50M2** 

**Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Sbl**|**Pt**|**Value**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|
|**ymo**|**arameer**|**DPAK**|**TO-220**|**TO-220FP**|**n**|
|VGS|Gate-source voltage|±25|||V|
|ID|Drain current (continuous) at TC= 25 °C|13|||A|
|ID|Drain current (continuous) at TC= 100 °C|8|||A|
|IDM (1)|Drain current (pulsed)|52|||A|
|PTOT|Total power dissipation at TC= 25 °C|110||25|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|||V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink (t = 1 s,<br>TC= 25 °C)|||2500|V|
|Tstg|Storage temperature range|-55 to 150|||°C|
|Tj|Operating junction temperature range|||||



_1. Pulse width is limited by safe operating area._ 

_2. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS_ 

_3. VDS ≤ 400 V_ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|
|**ymo**|**arameer**|**DPAK**|**TO-220**|**TO-220FP**|**n**|
|Rthj-case|Thermal resistance junction-case|1.14||5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|||
|Rthj-pcb (1)|Thermal resistance junction-pcb|50||||



_1. When mounted on 1 inch² FR-4, 2 Oz copper board._ 

## **Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)|4|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V)|215|mJ|



**DS10450** - **Rev 6** 

**page 2/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

**Table 4. On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|500|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 500 V|||1|µA|
|||VGS= 0 V, VDS= 500 V,<br>TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS(1)= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 6.5 A||0.24|0.28|Ω|



_1. Defined by design, not subject to production test_ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|710|-|pF|
|Coss|Output capacitance||-|44|-|pF|
|Crss|Reverse transfer capacitance||-|1.35|-|pF|
|Coss eq. (1)|Equivalent output capacitance|<br>VDS= 0 V to 400 V, VGS= 0 V|-|192|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|5.2|-|Ω|
|Qg|Total gate charge|VDD= 400 V, ID= 13 A,<br>VGS= 0 to 10 V (see<br>Figure 18. Test circuit for gate<br>charge behavior)|-|19.5|-|nC|
|Qgs|Gate-source charge||-|4|-|nC|
|Qgd|Gate-drain charge||-|8|-|nC|



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time<br><br><br> <br>r<br> <br><br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 250 V, ID= 6.5 A<br>RG= 4.7 Ω, VGS= 10 V (see<br>Figure 17. Test circuit for<br>esistive load switching times<br>andFigure 22. Switching time<br>waveform)|-|9.6|-|ns|
|tr|||-|7.6|-|ns|
|td(off)|||-|32|-|ns|
|tf|||-|10|-|ns|



**DS10450** - **Rev 6** 

**page 3/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||13|A|
|ISDM (1)|Source-drain current (pulsed)||-||52|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 13 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs,<br>VDD= 60 V (see<br>Figure 19. Test circuit for<br>inductive load switching and<br>diode recovery times)|-|280||ns|
|Qrr|Reverse recovery charge||-|2.85||µC|
|IRRM|Reverse recovery current||-|20.5||A|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C (see<br>Figure 19. Test circuit for<br>inductive load switching and<br>diode recovery times)|-|388||ns|
|Qrr|Reverse recovery charge||-|4.5||µC|
|IRRM|Reverse recovery current||-|21||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS10450** - **Rev 6** 

**page 4/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for DPAK** 

**==> picture [199 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GIPG230620141307LM<br>(A)<br>10 µs<br>10<br>100 µs<br>1 ms<br>1<br>10 ms<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 2. Thermal impedance for DPAK** 

**==> picture [176 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
K GC20460<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br>


**==> picture [513 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP<br>ID GIPG230620141448LM K  GC20940<br>(A)<br>10<br>10  [-1]<br>10 µs<br>100 µs<br>1<br>1 ms<br>10  [-2]<br>10 ms<br>0.1<br>TJ=150 °C<br>Tc=25 °C<br>Single pulse<br>0.01 10  [-3]<br>0.1 1 10 100 VDS(V) 10  [-4] 10  [-3] 10  [-2] 10  [-1] 10  [0] t p (s)<br>Operation in this area islimited by max RDS(on)<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 5/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves)** 

**==> picture [199 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Safe operating area for TO-220<br>ID GIPG230620141253LM<br>(A)<br>10µs<br>10<br>100µs<br>1 1ms<br>Tj=150°C 10ms<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Thermal impedance for TO-220** 

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**Figure 7. Output characteristics** 

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GIPG02306141524LM<br>ID(A)<br>VGS=7,8, 9, 10V<br>28<br>6V<br>24<br>20<br>16<br>12 5V<br>8<br>4<br>4V<br>0<br>0 4 8 12 16 20 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 8. Transfer characteristics** 

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**----- Start of picture text -----**<br>
ID GIPG2606141243LM<br>(A)<br>28 VDS=17.5 V<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Gate charge vs. gate-source voltage Figure 10. Capacitance variations<br>VGS GIPG2606141304LMVDS C GIPG2606141318LM<br>(V)12 VDS VDD=400 V 400(V) (pF)<br>ID=13 A<br>350 1000<br>10 Ciss<br>300<br>8<br>250<br>100<br>6 200<br>Coss<br>150<br>4<br>10<br>100<br>2<br>50<br>Crss<br>0 0 1<br>0 5 10 15 20 Qg(nC) 0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 6/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves)** 

**Figure 11. Normalized gate threshold voltage vs. temperature** 

**==> picture [194 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) GIPG2606141354LM<br>(norm)<br>1.1 ID=250 µA<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 13. Static drain-source on-resistance** 

**==> picture [194 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG2606141319LM<br>RDS(on)<br>(Ω)<br>VGS=10V<br>0.250<br>0.240<br>0.230<br>0 2 4 6 8 10 12 ID(A)<br>**----- End of picture text -----**<br>


**Figure 15. Output capacitance stored energy** 

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**----- Start of picture text -----**<br>
Eoss GIPG26067141339LM<br>(µJ)<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized V(BR)DSS vs. temperature** 

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**----- Start of picture text -----**<br>
V(BR)DSS GIPG2606141424LM<br>(norm)<br>ID=1 mA<br>1.08<br>1.04<br>1.00<br>0.96<br>0.92<br>0.88<br>-75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 14. Normalized on-resistance vs. temperature** 

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**----- Start of picture text -----**<br>
GIPG2606141410LM<br>RDS(on)<br>(norm)<br>VGS=10V<br>2.2<br>1.8<br>1.4<br>1<br>0.6<br>0.2<br>-75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Source- drain diode forward characteristics** 

**==> picture [192 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG2606141300LM<br>VSD(V)<br>1.2<br>1 TJ=-50°C<br>0.9<br>0.8<br>TJ=25°C<br>0.7<br>0.6 TJ=150°C<br>0.5<br>0 2 4 6 8 10 12 ISD(A)<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 7/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Test circuit for inductive load switching and<br>Figure 20. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. Switching time waveform<br>Figure 21. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 8/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS10450** - **Rev 6** 

**page 9/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type A2 package information** 

**4.1 DPAK (TO-252) type A2 package information** 

**Figure 23. DPAK (TO-252) type A2 package outline** 

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0068772_type-A2_rev25<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 10/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type A2 package information** 

**Table 8. DPAK (TO-252) type A2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS10450** - **Rev 6** 

**page 11/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information** 

- **4.2 DPAK (TO-252) type C2 package information** 

**Figure 24. DPAK (TO-252) type C2 package outline** 

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**----- Start of picture text -----**<br>
0068772_C2_25<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 12/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information** 

**Table 9. DPAK (TO-252) type C2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS10450** - **Rev 6** 

**page 13/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information** 

**Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**==> picture [111 x 196] intentionally omitted <==**

FP_0068772_25 

**DS10450** - **Rev 6** 

**page 14/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) packing information** ~~To~~ 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 26. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 15/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) packing information** 

**Figure 27. DPAK (TO-252) reel outline** 

**==> picture [409 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS10450** - **Rev 6** 

**page 16/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 TO-220FP package information** 

## **4.4 TO-220FP package information** 

**Figure 28. TO-220FP package outline** 

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**----- Start of picture text -----**<br>
7012510_Rev_12_B<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 17/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 TO-220FP package information** 

## **Table 11. TO-220FP package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



**DS10450** - **Rev 6** 

**page 18/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 TO-220 type A package information** 

## **4.5 TO-220 type A package information** 

**Figure 29. TO-220 type A package outline** 

**==> picture [328 x 467] intentionally omitted <==**

**==> picture [67 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_22<br>**----- End of picture text -----**<br>


**DS10450** - **Rev 6** 

**page 19/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 TO-220 type A package information** 

## **Table 12. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



**DS10450** - **Rev 6** 

**page 20/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Ordering information** 

## **5** 

## **Ordering information** 

**Table 13. Ordering information** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD16N50M2|16N50M2|DPAK|Tape and reel|
|STF16N50M2||TO-220FP|Tube|
|STP16N50M2||TO-220||



**DS10450** - **Rev 6** 

**page 21/24** 

**STD16N50M2, STF16N50M2, STP16N50M2** 

## **Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Jul-2014|1|Initial release.|
|18-Jul-2014|2|Updated_Figure 9_.|
|31-Jul-2014|3|Updated_Figure 2_and_Figure 4_.|
|25-Aug-2016|4|Datasheet promoted from preliminary data to production data<br>Changed:_Section 4.1: "DPAK (TO-252) type A2 package information"_<br>Minor text changes|
|04-May-2017|5|Updated marking in Table 1: "Device summary".<br>Updated Figure 3: "Thermal impedance for DPAK".<br>Minor text changes|
|04-Dec-2018|6|Updated Features,Table 1. Absolute maximum ratings,Table 4. On /off<br>states,Table 5. Dynamic.<br>AddedSection 4.2 DPAK (TO-252) type C2 package informationand<br>Section 5 Ordering information.|



**DS10450** - **Rev 6** 

**page 22/24** 

**STD16N50M2, STF16N50M2, STP16N50M2 Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**<br>DPAK (TO-252) type C2 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**<br>DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14|
||**4.4**<br>TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16|
||**4.5**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22**||
|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23**||



**DS10450** - **Rev 6** 

**page 23/24** 

**STD16N50M2, STF16N50M2, STP16N50M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS10450** - **Rev 6** 

**page 24/24** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD16N50M2/power-mosfet-n-channel-500-v-13-a-028-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std16n50m2/mosfet-n-ch-500v-13a-150deg-c/dp/3367018)
---

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