# Power MOSFET, N Channel, 30 V, 80 A, 2400 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3367017/)

**URL**: https://novapart.co/products/STD150N3LLH6/power-mosfet-n-channel-30-v-80-a-2400-ohm-to-252
**SKU**: STD150N3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1900
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET VI DeepGATE |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 2400µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367017/)

**==> picture [61 x 39] intentionally omitted <==**

## **STD150N3LLH6 STP150N3LLH6, STU150N3LLH6** 

## N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STD150N3LLH6|30 V|0.0028Ω|80 A|
|STP150N3LLH6|30 V|0.0033Ω|80 A|
|STu150N3LLH6|30 V|0.0033Ω|80 A|



- RDS(on) * Qg industry benchmark 

- Extremely low on-resistance RDS(on) 

- High avalanche ruggedness 

- Low gate drive power losses 

**==> picture [188 x 124] intentionally omitted <==**

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3 3<br>2<br>1 1<br>DPAK IPAK<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


## **Application** 

- Switching applications 

## **Description** 

This product utilizes the 6th generation of design rules  of ST’s proprietary STripFET™ technology, with a new  gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD150N3LLH6|150N3LLH6|DPAK|Tape and reel|
|STP150N3LLH6|150N3LLH6|TO-220|Tube|
|STU150N3LLH6|150N3LLH6|IPAK|Tube|



September 2009 

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Doc ID 15227 Rev 3 

_www.st.com_ 

|**Contents**|**STD150N3LLH6, STP150N3LLH6, STU150N3LLH6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)               . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**STD150N3LLH6, STP150N3LLH6, STU150N3LLH6** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|30|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|80|A|
|ID|Drain current (continuous) at TC= 100 °C|80|A|
|IDM<br>(2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
||Derating factor|0.73|W/°C|
|EAS<br>(3)|Single pulse avalanche energy|525|mJ|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Max. operating junction temperature|175|°C|



1. Limited by wire bonding 

2. Pulse width limited by safe operating area 

3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V 

## **Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|1.36|°C/W|
|Rthj-amb|Thermal resistance junction-case max|100|°C/W|
|Tj|Maximum lead temperature for soldering purpose|275|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>Voltage|ID= 250 µA, VGS= 0|30|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 30 V<br>VDS= 30 V,Tc = 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1||2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 40 A<br>SMD version||0.0024|0.0028|Ω|
|||VGS= 10 V, ID= 40 A||0.0029|0.0033|Ω|
|||VGS= 4.5 V, ID= 40 A<br>SMD version||0.0034|0.0045|Ω|
|||VGS= 4.5 V, ID= 40 A||0.0039|0.0049|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f=1 MHz,<br>VGS= 0|-|4040<br>740<br>425|-|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 15 V, ID= 80 A<br>VGS= 4.5 V<br>_(see Figure 14)_|-|40<br>16.3<br>15.8|-|nC<br>nC<br>nC|
|RG|Gate input resistance|f = 1 MHz gate bias<br>Bias = 0 test signal<br>level = 20 mV<br>open drain|-|1.4|-|Ω|



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**Electrical characteristics** 

**Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD= 15 V, ID= 40 A,<br>RG= 4.7Ω,VGS= 10 V<br>_(see Figure 15)_|-|17<br>18|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD= 15 V, ID= 40 A,<br>RG= 4.7Ω,VGS= 10 V<br>_(see Figure 15)_|-|75<br>46|-|ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||80<br>320|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 40 A, VGS= 0|-||1.1|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 80 A,<br>di/dt = 100 A/µs,<br>VDD= 24 V<br>_(see Figure 17)_|-|34<br>35<br>2.1||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area Figure 3. Thermal impedance** 

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**----- Start of picture text -----**<br>
ID AM03997v1<br>(A)<br>100<br>10 100µs<br>1ms<br>Tj=150°C 10ms<br>1<br>Tc=25°C<br>Sinlge<br>pulse<br>0.1<br>0.1 1 10 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

**==> picture [175 x 167] intentionally omitted <==**

## **Figure 5. Transfer characteristics** 

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AM03998v1 AM03999v1<br>ID ID<br>(A) (A)<br>VGS=10V<br>350 300 VDS=1V<br>300<br>5V 250<br>250<br>4V 200<br>200<br>150<br>150<br>100<br>100<br>3V<br>50 50<br>0 0<br>0 2 4 VDS(V) 0 2 4 6 8 10 VGS(V)<br>Figure 6. Normalized BVDSS vs temperature  Figure 7. Static drain-source on resistance<br>BVDSS AM04903v1 RDS(on) AM04905v1<br>(Ω)<br>(norm)<br>4.5 VGS=10V<br>1.06<br>ID=250µA 4.0<br>1.04<br>3.5<br>3.0<br>1.02<br>2.5<br>1.00<br>2.0<br>0.98 1.5<br>1.0<br>0.96<br>0.5<br>0.94 0.0<br>-50 0 50 100 150 TJ(°C) 0 20 40 60 80 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

**==> picture [463 x 176] intentionally omitted <==**

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VGS AM04000v1 C AM00893v1<br>(V) (pF)<br>VDD=15V f=1MHz<br>12<br>ID=80A 6100<br>10<br>4600<br>8 Ciss<br>6<br>3100<br>4<br>1600<br>2 Coss<br>Crss<br>0 100<br>0 20 40 60 80 100 Qg(nC) 0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

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VGS(th) AM04901v1 RDS(on) AM04902v1<br>(norm) ID=250µA (norm) ID=40A<br>1.6<br>1.1 VGS=10V<br>1.4<br>1.0<br>1.2<br>0.8 1.0<br>0.8<br>0.6<br>0.6<br>0.4<br>0.4<br>0.2<br>0.2<br>0<br>-50 0 50 100 150 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 12. Source-drain diode forward characteristics** 

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**----- Start of picture text -----**<br>
VSD AM04906v1<br>(V) TJ=-50°C<br>1.0<br>0.9<br>0.8<br>TJ=25°C<br>0.7 TJ=175°C<br>0.6<br>0.5<br>0.4<br>0 20 40 60 80 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuit** 

## **3 Test circuit** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

**==> picture [463 x 162] intentionally omitted <==**

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit** 

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**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

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**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Test circuit** 

## **Figure 19. Gate charge waveform** 

**==> picture [190 x 153] intentionally omitted <==**

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

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TO-251 (IPAK) mechanical data<br>mm.<br>DIM.<br>min. typ max.<br>A 2.20 2.40<br>A1 0.90 1.10<br>b 0.64 0.90<br>b2 0.95<br>b4 5.20 5.40<br>c 0.45 0.60<br>c2 0.48 0.60<br>D 6.00 6.20<br>E 6.40 6.60<br>e 2.28<br>e1 4.40 4.60<br>H 16.10<br>L 9.00 9.40<br>(L1) 0.80 1.20<br>L2 0.80<br>V1 10  [o]<br>0068771_H<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

||||**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||
|||||||||||||
|**DIM.**||||||**mm.**||||||
||||**min.**|||**typ**|||||**max.**|
|A|||2.20||||||||2.40|
|A1|||0.90||||||||1.10|
|A2|||0.03||||||||0.23|
|b|||0.64||||||||0.90|
|b4|||5.20||||||||5.40|
|c|||0.45||||||||0.60|
|c2|||0.48||||||||0.60|
|D|||6.00||||||||6.20|
|D1||||||5.10||||||
|E|||6.40||||||||6.60|
|E1||||||4.70||||||
|e||||||2.28||||||
|e1|||4.40||||||||4.60|
|H|||9.35||||||||10.10|
|L|||1|||||||||
|L1||||||2.80||||||
|L2||||||0.80||||||
|L4|||0.60||||||||1|
|R||||||0.20||||||
|||||o|||||||~~8 ~~o|
|~~V~~|||~~0~~|||||||||
|||||||||||||
|||||||||||0068772_G||
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**Package mechanical data** 

## **TO-220 mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.48||0.70|0.019||0.027|
|D|15.25||15.75|0.6||0.62|
|D1||1.27|||0.050||
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.051|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|∅P|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|



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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **DPAK FOOTPRINT** 

All dimensions are in millimeters 

## **TAPE AND REEL SHIPMENT** 

**==> picture [388 x 353] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>Access hole<br>mm inch<br>at slot location DIM.<br>MIN. MAX. MIN. MAX.<br>B A 330 12.992<br>| B 1.5 0.059<br>ae als Q Cc f C 12.8 13.2 0.504 0.520<br>Yh , D 20.2 0.795<br>PON LO 4 G 16.4 18.4 0.645 0.724<br>Full radius = \ /inTapecore slotfor - —atG measuredhub N 50 1.968<br>tape start<br>25mm min. T 22.4 0.881<br>a width<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>2500 2500<br>mm inch<br>DIM.<br>MIN. MAX. MIN. MAX.<br>—<br>A0 6.8 7 0.267 0.275<br>SES ye<br>B0 10.4 10.6 0.409 0.417<br>ee ee \<br>B1 12.1 0.476<br>D 1.5 1.6 0.059 0.063<br>D1 1.5 0.059<br>—}—} Sin fi oy co ea alba sue<br>E 1.65 1.85 0.065 0.073<br>aee F a 7.4 ee eeee 7.6 0.291 ee 0.299 ee Formachineonly includingret | Ao,| | Le | oTCenterCavi line‘<br>K0 2.55 2.75 0.100 0.108 of Feed<br>me ee ee “oni User Direction<br>P0 3.9 4.1 0.153 0.161<br>es ee ee ee ee ~<br>P1 7.9 8.1 0.311 0.319<br>P2 1.9 2.1 0.075 0.082<br>es R 40 ee ee 1.574 ee ee<br>ee W 15.7 ee 16.3 ee 0.618 ee 0.641 ee FEED DIRECTION Bending radius<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 8.** 

**Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Dec-2008|1|First release|
|20-Jul-2009|2|– Document status promoted from preliminary data to datasheet<br>– Added new package, mechanical data: TO-220|
|10-Sep-2009|3|Qgsand Qgdvalues have been modified on_Table 5: Dynamic_|



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Doc ID 15227 Rev 3 



## Links

- [View this product on Novapart](https://novapart.co/products/STD150N3LLH6/power-mosfet-n-channel-30-v-80-a-2400-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std150n3llh6/mosfet-n-ch-30v-80a-175deg-c-110w/dp/3367017)
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