# Power MOSFET, N Channel, 60 V, 80 A, 3100 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3367016/)

**URL**: https://novapart.co/products/STD140N6F7/power-mosfet-n-channel-60-v-80-a-3100-ohm-to-252
**SKU**: STD140N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6120
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 134W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 3100µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367016/)

**STD140N6F7** 

Datasheet 

## N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK 

package 

**Features** 

TAB **Order code VDS RDS(on) max. ID PTOT** STD140N6F7 60 V 3.8 m Ω 80 A 134 W 2 3 &. 1 ~~a~~ • Among the lowest RDS(on) on the market **DPAK** 

- Excellent FoM (figure of merit) 

- Low Crss/Ciss ratio for EMI immunity 

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- High avalanche ruggedness 

## **Applications** 

- Switching applications 

## **Description** 

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Product status** ~~ea~~ STD140N6F7 **Product summary** ~~Sea~~ **Order code** STD140N6F7 **Marking** 140N6F7 **Package** DPAK **Packing** Tape and reel 

**DS11454** - **Rev 3** - **April 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD140N6F7 STD140N6F7 electrical ratings** 

**1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|±20|V|
|ID(1)|Drain current (continuous) at Tcase= 25 °C|80|A|
||Drain current (continuous) at Tcase= 100 °C|80||
|IDM (2)|Drain current (pulsed)|320|A|
|PTOT|Total power dissipation at Tcase= 25 °C|134|W|
|EAS (3)|Single pulse avalanche energy|200|mJ|
|dv/dt(4)|Drain-body diode dynamic dv/dt ruggedness|7.1|V/ns|
|Tstg|Storage temperature range|-55 to 175|°C|
|Tj|Operating junction temperature range|||



_1. Current is limited by package._ 

_2. Pulse width is limited by safe operating area._ 

_3. starting Tj = 25 °C, ID = 20 A, VDD = 30 V._ 

_4. ISD= 80 A; di/dt = 600 A/μs; VDD = 48 V; Tj < Tjmax_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb (1)|Thermal resistance junction-pcb|50|°C/W|
|Rthj-c|Thermal resistance junction-case|1.12||



_1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s._ 

**DS11454** - **Rev 3** 

**page 2/17** 

**STD140N6F7 STD140N6F7 electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 3. On/off-states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|60|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 60 V|||1|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= 20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 40 A||3.1|3.8|mΩ|



**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 30 V, f = 1 MHz, VGS= 0 V|-|3100|-|pF|
|Coss|Output capacitance||-|1520|-||
|Crss|Reverse transfer capacitance||-|193|-||
|Qg|Total gate charge|VDD= 30 V, ID= 80 A, VGS= 0 to 10 V<br>(seeFigure 13. Test circuit for gate<br>charge behavior)|-|55|-|nC|
|Qgs|Gate-source charge||-|19|-||
|Qgd|Gate-drain charge||-|18|-||



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 30 V, ID= 40 A, RG= 4.7 Ω,<br>VGS= 10 V (seeFigure 12. Test circuit for<br>resistive load switching timesand<br>Figure 17. Switching time waveform)|-|24|-|ns|
|tr|Rise time||-|68|-||
|td(off)|Turn-off delay time||-|39|-||
|tf|Fall time||-|20|-||



**Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD (1)|Forward on voltage|VGS= 0 V, ISD= 80 A|-||1.2|V|
|trr|Reverse recovery time|ISD= 80 A, di/dt = 100 A/µs, VDD= 48 V<br>(seeFigure 14. Test circuit for inductive<br>load switching and diode recovery times)|-|42.4||ns|
|Qrr|Reverse recovery charge||-|36.2||nC|
|IRRM|Reverse recovery current||-|1.8||A|
|_1._<br>_Pulse test: pulse duration = 300 µs, duty cycle 1.5%._|||||||



**DS11454** - **Rev 3** 

**page 3/17** 

**STD140N6F7 Electrical characteristics curves** 

## **2.1 Characteristics curves** 

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Figure 1. Safe operating area Figure 2. Thermal impedance<br>ID GIPD221220150915SOA K  GIPD221220150916ZTH<br>(A) Operation in this area<br> is limited by RDS(on) δ=0.5<br>0.2<br>10 2<br>0.1<br>tp= 100µs 10  [-1]<br>0.05<br>10 1 tp= 1ms 0.02<br>0.01 Zth=k*Rthj-c<br>TTc j  ≤ 175°C = 25°C tp= 10ms Single pulse<br>single pulse<br>10 0 10  [-2]<br>10-1 10 0 10 1 VDS (V) 10  [-5] 10  [-4] 10  [-3] 10  [-2] 10  [-1] t p (s)<br>**----- End of picture text -----**<br>


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Figure 3. Output characteristics Figure 4. Transfer characteristics<br>I D GIPG310320151043OCH I D GIPG310320151058TCH<br>(A) V GS = 9,10 V (A)<br>250 V GS = 8 V 250<br>200 V GS = 7 V 200 V DS = 2 V<br>150 150<br>V GS = 6 V<br>100 100<br>50 50<br>V  GS  = 5 V<br>0 0<br>0 2 4 6 8 V DS (V) 0 2 4 6 8 V GS (V)<br>**----- End of picture text -----**<br>


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Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance<br>V GS GIPG310320151113QVG R DS(on) GIPG020420150841SID<br>(V) (mΩ)<br>12<br>V DD = 30 V  3.25<br>10 I D = 80 A<br>3.20<br>V GS = 10 V<br>8<br>3.15<br>6<br>3.10<br>4<br>3.05<br>2<br>0 3.00<br>0 20 40 60 Q g (nC) 30 40 50 60 70 I D (A)<br>**----- End of picture text -----**<br>


**DS11454** - **Rev 3** 

**page 4/17** 

**STD140N6F7 Electrical characteristics curves** 

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Figure 8. Normalized gate threshold voltage vs<br>Figure 7. Capacitance variations<br>temperature<br>C  GIPG310320151105CVR<br>(pF) V GS(th) GIPG310320150943VGS<br>(norm.)<br>1.1 I D = 250 μA<br>10  [4]<br>1.0<br>C ISS<br>0.9<br>10  [3] C OSS<br>0.8<br>10  [2] f = 1 MHz C RSS 0.7<br>0.6<br>10  [1]<br>10  [-1] 10  [0] 10  [1] V DS (V) 0.5<br>-75 -25 25 75 125 T j (°C)<br>**----- End of picture text -----**<br>


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Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature<br>R DS(on) GIPG310320151015RDS V (BR)DSS GIPG310320150929BDV<br>(norm.) (norm.)<br>1.8<br>V GS = 10 V<br>1.02<br>1.6<br>I D = 1 mA<br>1.4<br>1.00<br>1.2<br>1.0<br>0.98<br>0.8<br>0.6 0.96<br>-75 -25 25 75 125 T j (°C) -75 -25 25 75 125 T j (°C)<br>**----- End of picture text -----**<br>


**Figure 11. Source-drain diode forward characteristics** 

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V SD(on) GIPG310320151032SDF<br>(V)<br>1.0<br>T j = -55 °C<br>0.9<br>T  j  = 25 °C<br>0.8<br>0.7 T j = 175 °C<br>0.6<br>0.5<br>10 20 30 40 50 60 70 I SD (A)<br>**----- End of picture text -----**<br>


**DS11454** - **Rev 3** 

**page 5/17** 

**STD140N6F7 Test circuits** 

**3 Test circuits** 

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Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


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Figure 14. Test circuit for inductive load switching and<br>Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


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Figure 17. Switching time waveform<br>Figure 16. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS11454** - **Rev 3** 

**page 6/17** 

**STD140N6F7 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**DS11454** - **Rev 3** 

**page 7/17** 

**STD140N6F7 DPAK (TO-252) type A2 package information** 

## **4.1 DPAK (TO-252) type A2 package information** 

**Figure 18. DPAK (TO-252) type A2 package outline** 

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0068772_type-A2_rev26<br>**----- End of picture text -----**<br>


**DS11454** - **Rev 3** 

**page 8/17** 

**STD140N6F7 DPAK (TO-252) type A2 package information** 

**Table 7. DPAK (TO-252) type A2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS11454** - **Rev 3** 

**page 9/17** 

**STD140N6F7 DPAK (TO-252) type C2 package information** 

## **4.2 DPAK (TO-252) type C2 package information** 

**Figure 19. DPAK (TO-252) type C2 package outline** 

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0068772_type-C2_rev26 

**DS11454** - **Rev 3** 

**page 10/17** 

**STD140N6F7 DPAK (TO-252) type C2 package information** 

**Table 8. DPAK (TO-252) type C2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS11454** - **Rev 3** 

**page 11/17** 

**STD140N6F7 DPAK (TO-252) type C2 package information** 

**Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

**DS11454** - **Rev 3** 

**page 12/17** 

**STD140N6F7 DPAK (TO-252) packing information** ~~To~~ 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 21. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS11454** - **Rev 3** 

**page 13/17** 

**STD140N6F7 DPAK (TO-252) packing information** 

**Figure 22. DPAK (TO-252) reel outline** 

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**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 9. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS11454** - **Rev 3** 

**page 14/17** 

**STD140N6F7** 

## **Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Dec-2015|1|First release.|
|11-Apr-2016|2|Datasheet promoted from preliminary data to production data.<br>Minor text changes.|
|10-Apr-2019|3|AddedSection  4.2  DPAK (TO-252) type C2 package information.<br>Minor text changes.|



**DS11454** - **Rev 3** 

**page 15/17** 

**STD140N6F7 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**||
||**4.1**|DPAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
||**4.2**|Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.3**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15**|



**DS11454** - **Rev 3** 

**page 16/17** 

**STD140N6F7** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS11454** - **Rev 3** 

**page 17/17** 



## Links

- [View this product on Novapart](https://novapart.co/products/STD140N6F7/power-mosfet-n-channel-60-v-80-a-3100-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/std140n6f7/mosfet-n-ch-60v-80a-175deg-c-134w/dp/3367016)
---

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