# Power MOSFET, N Channel, 600 V, 11 A, 0.38 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3129734/)

**URL**: https://novapart.co/products/STD13NM60ND/power-mosfet-n-channel-600-v-11-a-038-ohm-to-252
**SKU**: STD13NM60ND
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6400
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | FDmesh II |
| Qualification | - |
| Power Dissipation | 109W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.38ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129734/)

## **STD13NM60ND, STF13NM60ND, STP13NM60ND** 

N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages 

− **Datasheet production data** 

## **Features** 

**==> picture [151 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>3<br>2<br>DPAK 1<br>TO-220FP<br>TAB ‘<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


|**Order codes**|**VDS@ TJmax**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STD13NM60ND|650 V|0.38Ω|11 A|
|STF13NM60ND||||
|STP13NM60ND||||



- The worldwide best RDS(on)* area among fast recovery diode devices 

- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Figure 1. Internal schematic diagram** 

- Extremely high dv/dt and avalanche capabilities 

## **Applications** 

- Switching applications 

## **Description** 

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD13NM60ND|13NM60ND|DPAK|Tape and reel|
|STF13NM60ND||TO-220FP|Tube|
|STP13NM60ND||TO-220||



_www.st.com_ 

May 2013 

DocID024645 Rev 1 

1/21 

This is information on a product in full production. 

|**Contents**|**STD13NM60ND, STF13NM60ND, STP13NM60ND**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



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**Electrical ratings** 

**==> picture [461 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
1  Electrical ratings<br>Table 2. Absolute maximum ratings<br>Value<br>Symbol Parameter Unit<br>DPAK, TO-220 TO-220FP<br>VDS Drain-source voltage 600 V<br>VGS Gate-source voltage ± 25 V<br>——<br>ID Drain current (continuous) at TC = 25°C 11 11  [(1)] A<br>ID Drain current (continuous) at TC = 100°C 6.93 6.93 [(1)] A<br>IDM (2) Drain current (pulsed) 44 44  [(1)] A<br>PTOT  Total dissipation at TC = 25°C 109 25 W<br>dv/dt  [(3)] Peak diode recovery voltage slope 40 V/ns<br>dv/dt  [(4)] MOSFET dv/dt ruggedness 40 V/ns<br>Insulation withstand voltage (RMS) from all<br>VISO three leads to external heat sink  2500 V<br>(t=1s;TC=25°C)<br>Tstg Storage temperature -55 to 150 °C<br>2 Tj Max. operating junction temperature 150 °C<br>1. Limited by maximum junction temperature<br>2. Pulse width limited by safe operating area<br>**----- End of picture text -----**<br>


**==> picture [404 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
3. ISD ≤  11 A, di/dt  ≤  400 A/μs, VDD = 80% V(BR)DSS, VDS(peak) ≤  V(BR)DSS<br>4. VDS ≤  480 V<br>Table 3. Thermal data<br>Value<br>Symbol Parameter Unit<br>DPAK TO-220FP TO-220<br>Rthj-case Thermal resistance junction-case max 1.15 5 1.15 °C/W<br>Rthj-amb Thermal resistance junction-amb max 62.5 °C/W<br>=——amne Rthj-pcb(1) Thermal resistance junction-pcb max 50 °C/W<br>1. When mounted on 1inch² FR-4 board, 2 oz Cu<br>**----- End of picture text -----**<br>


**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Max value**|**Unit**|
|---|---|---|---|
|IAS|Avalanche current, repetitive or not-<br>repetitive(1)|3|A|
|EAS|Single pulse avalanche energy(2)|162|mJ|



1. Pulse width limited by Tj max 

2. starting Tj= 25 °C, ID=IAS, VDD= 50 V 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 600 V<br>VDS= 600 V, TC=125 °C|||1<br>100|μA<br>μA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|3|4|5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 5.5 A||0.32|0.38|Ω|



**Table 6. Dynamic** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~e~~|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss<br>~~a ~~<br>~~—~~|Input capacitance<br> ~~a~~<br>~~—~~|VDS= 50 V, f =1 MHz,<br>VGS= 0<br>~~ee~~<br>~~a~~<br>~~ft~~|-<br>~~e~~<br>~~a~~|845<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~pop~~|Output capacitance<br>~~pop~~||-<br>~~ft~~|47<br>~~ft~~|-<br>~~ft |~~|pF<br>~~|~~|
|Crss<br>~~pop~~|Reverse transfer<br>capacitance<br>~~pop~~||-<br>~~ft~~|2.5<br>~~ft~~|-<br>~~ft |~~|pF<br>~~|~~|
|Coss eq.<br>(1)<br>~~pop~~|Equivalent output<br>capacitance<br>~~pop~~|VGS= 0, VDS= 0V to 480 V<br>~~ft~~|-<br>~~ft~~|121<br>~~ft~~|-<br>~~ft |~~|pF<br>~~|~~|
|Rg|Gate input resistance|f=1 MHz Gate DC Bias=0<br>Test signal level=20 mV<br>open drain|-|4.3|-|Ω|
|Qg<br>~~ee~~|Total gate charge<br>~~===~~|VDD= 480 V, ID= 11 A<br>VGS= 10 V<br>(see_Figure 18_)<br>~~===~~<br>~~a~~<br>~~T~~|-<br>~~===~~|24.5<br>~~===~~|-<br>~~===~~~~**=**~~|nC<br>~~**=**~~|
|Qgs<br>~~ee~~<br>~~——~~|Gate-source charge<br>~~===~~<br>~~——~~||-<br>~~===~~<br>~~a~~|4.8<br>~~===~~<br>~~a~~|-<br>~~===~~~~**=**~~<br>~~a~~|nC<br>~~**=**~~<br>~~a~~|
|Qgd<br>~~ee~~<br>~~——~~|Gate-drain charge<br>~~===~~<br>~~——~~||-<br>~~===~~<br>~~a~~<br>~~T~~|17<br>~~===~~<br>~~a~~<br>~~T~~|-<br>~~===~~~~**=**~~<br>~~a~~|nC<br>~~**=**~~<br>~~a~~|



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**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 5.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_)|-|46.5|-|ns|
|tr|Rise time||-|10|-|ns|
|td(off)|Turn-off delay time||-|9.6|-|ns|
|tf|Fall time||-|15.4|-|ns|



**Table 8. Source drain diode** 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test conditions**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|
|ISD<br>~~GG~~|Source-drain current<br>~~GG~~|~~GG~~|-<br>~~GG~~|~~GG~~|11<br>~~GG~~|A<br>~~GG~~|
|ISDM<br>(1)<br>~~Rs~~|Source-drain current (pulsed)<br>~~Rs~~|~~Rs~~|-<br>~~Rs~~|~~Rs~~|44<br>~~Rs~~|A<br>~~Rs~~|
|VSD<br>(2)<br>~~a~~<br>~~ee~~<br>~~ee~~|Forward on voltage<br>~~ee~~|ISD= 11 A, VGS=0<br>~~ee~~|-<br>~~|~~|~~|~~<br>~~|~~|1.6<br>~~|~~<br>~~|ff~~|V<br>~~|~~<br>~~ff~~|
|trr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|ISD=11 A, di/dt =100 A/μs,<br>VDD= 100 V<br>(see_Figure 19_)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~|~~<br>~~|~~|150<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~|ns<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~|
|Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|755<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~|nC<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~|
|IRRM<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|12<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~| ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~|A<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~|
|trr<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD= 100 V<br>di/dt =100 A/μs, ISD= 11 A<br>Tj = 150 °C (see_Figure 19_)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~|~~<br>~~|~~<br>~~|~~|187<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|~~| ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~**|**|~~|ns<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~|~~|
|Qrr<br>~~es~~<br>~~ee~~<br>~~ee~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|1271<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| ff~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~**|**|~~<br>~~|~~<br>~~ft~~|nC<br>~~ff~~<br>~~|~~<br>~~ff~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ft~~|
|IRRM<br>~~ee~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~|13.6<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| ff~~<br>~~|~~<br>~~**|**|~~<br>~~|~~<br>~~ft~~|A<br>~~ff~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ft~~|



2. Pulsed: pulse duration = 300μs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK** 

**==> picture [206 x 566] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15772v1<br>(A)<br>10µs<br>10<br>100µs<br>ee £<br>1 1ms<br>Tj=150°C<br>Tc=25°C<br>10ms<br>Single<br>pulse<br>0.1<br>0.1 ZTE 1 10 a 100 VDS(V)<br>gure 4. Safe operating area for TO-220FPure 4. Safe operating area for TO-220FPperating area for TO-220FPerating area for TO-220FPg area for TO-220FP area for TO-220FP<br>ID AM15773v1<br>(A)<br>10<br>10µs<br>1 ONS 100µs<br>= a<br>1ms<br>Tj=150°C 10ms<br>0.1<br>Tc=25°C<br>Single<br>Sere eu Ste<br>pulse<br>0.01 aa os<br>0.1 Man Aaa 1 10 100 aii VDS(V)<br>Figure 6. Safe operating area for TO-220gure 6. Safe operating area for TO-220ure 6. Safe operating area for TO-220perating area for TO-220erating area for TO-220g area for TO-220 area for TO-220<br>ID AM15774v1<br>(A)<br>10<br>10µs<br>= iA<br>100µs<br>iiSe ntAlS24 Sol<br>1ms<br>01 UTA TEN<br>Tj=150°C<br>Tc=25°C 10ms<br>BA ii<br>Single<br>pulse<br>0.1 ZT TE<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Safe operating area for TO-220FPure 4. Safe operating area for TO-220FPperating area for TO-220FPerating area for TO-220FPg area for TO-220FP area for TO-220FP** 

**Figure 6. Safe operating area for TO-220gure 6. Safe operating area for TO-220ure 6. Safe operating area for TO-220perating area for TO-220erating area for TO-220g area for TO-220 area for TO-220** 

## **Figure 5. Thermal impedance for TO-220FP** 

**Figure 7. Thermal impedance for TO-220** 

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**Electrical characteristics** 

**==> picture [423 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Output characteristics Figure 9. Transfer characteristics<br>AM15775v1 AM15776v1<br>ID ID (A)<br>(A) VGS=7, 8, 9, 10V- 24 VDS=20V<br>22 22<br>————— 6V oo<br>20 20<br>18 18<br>16 16<br>| fae) |<br>14 14<br>12 12<br>10 ——— 10 of<br>5V<br>8 8<br>6 6<br>4 oo 4 FEES<br>2 4V 2<br>0 yj —} ~~ +] 0 HEEF E EE [EEE] E<br>0 5 10 15 20 25 VDS(V) 0 2 4 6 8 10 VGS(V)<br>ure 10. Gate charge vs gate-source voltagege vs gate-source voltagee vs gate-source voltagegate-source voltageate-source voltagegee Figure 11. Static drain-source on-resistance<br>VGS AM15779v1VDS RDS(on) AM15778v1<br>(V) (Ω)<br>VDS VDD=480V (V) 0.340 V GS =10V<br>10 ID=11A 500<br>0.335<br>8 / 400 0.330 oo<br>6 300 0.325<br>0.320<br>4 200<br>0.315<br>2 /\ 100 Van<br>0.310<br>sen TaneEE AEE<br>0 to 0 0.305 PTT | | tT ft |<br>0 4 8 12 16 20 22 Qg(nC) 0 2 4 6 8 10 ID(A)<br>**----- End of picture text -----**<br>


**Figure 10. Gate charge vs gate-source voltagege vs gate-source voltagee vs gate-source voltagegate-source voltageate-source voltagegee** 

**Figure 12. Capacitance variations** 

**Figure 13. Normalized gate threshold voltage vs. temperature** 

**==> picture [426 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15780v1 VGS(th) AM15777v1<br>(pF) (norm)<br>1.10 ID=250 µA<br>1.05<br>1000 Pa Ciss<br>1.00<br>0.95<br>100<br>0.90<br>PS<br>Coss<br>0.85<br>Seer<br>10<br>0.80<br>Crss 0.75<br>1 0.70<br>Sei SH S e<br>0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 15. Source-drain diode forward** 

**==> picture [442 x 397] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Normalized on-resistance vs  Figure 15. Source-drain diode forward<br>temperature characteristics<br>RDS(on)(norm) AM15782v1 VSD (V) AM15783v1<br>2.1 ID=11 A TJ=-50 ° C<br>1.2<br>1.9 | | ff)<br>1.7 pt | | | | Vy TJ=25°C<br>1<br>1.5<br>pt |] | yt<br>1.3 seccarae<br>0.8<br>TJ=150°C<br>1.1<br>Pt | tA | |<br>0.9<br>|| i wl tt 0.6<br>0.7 | fet<br>0.5 0.4<br>rT TT |tT ttTT<br>-50 ee -25 0 25 50 75 100 125 TJ(°C) A 0 2 4 6 8 10 ISD(A)<br>Figure 16. Normalized VDS vs temperature<br>VDS AM15781v1<br>(norm)<br>1.08 ID=1mA<br>1.06<br>1.04 PEE<br>1.02<br>P| tT | wy tT<br>1<br>0.98 tt<br>0.96 _asoooe<br>0.94<br>0.92 ACC<br>-50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for resistive load** 

**Figure 18. Gate charge test circuit** 

**==> picture [444 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 315] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 9. DPAK (TO-252) mechanical data** 

||**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|2.20|~~ee ee~~|2.40<br>~~ee~~|
|A1<br>~~a~~|0.90||1.10|
|A2<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.64<br>||0.90<br>|
|b4<br>~~Ge~~|5.20<br>~~Ge~~|~~Ge~~|5.40<br>~~Ge~~|
|c<br>~~Ge~~|0.45<br>~~Ge~~|~~Ge~~|0.60<br>~~Ge~~|
|c2<br>~~a~~|0.48||0.60|
|D<br>~~a~~|6.00||6.20|
|D1<br>~~a~~||5.10||
|E<br>~~a~~|6.40<br>||6.60<br>|
|E1<br>~~Ge~~|~~Ge~~|4.70<br>~~Ge~~|~~Ge~~|
|e<br>~~Ge~~|~~Ge~~|2.28<br>~~Ge~~|~~Ge~~|
|e1<br>~~a~~|4.40||4.60|
|H<br>~~a~~|9.35||10.10|
|L<br>~~a~~|1.00||1.50|
|(L1)<br>~~a~~||2.80<br>||
|L2<br>~~Ge~~|~~Ge~~|0.80<br>~~Ge~~|~~Ge~~|
|L4<br>~~Ge~~|0.60<br>~~Ge~~|~~Ge~~|1.00<br>~~Ge~~|
|R<br>~~a~~||0.20||
|V2<br>~~a~~|0°||8°|



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**Package mechanical data** 

## **Figure 23. DPAK (TO-252) drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_K<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**==> picture [135 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. DPAK footprint  [(a)]<br>**----- End of picture text -----**<br>


**==> picture [34 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint_REV_K<br>**----- End of picture text -----**<br>


- a. All dimensions are in millimeters 

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**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.4|~~ee ee~~|4.6<br>~~ee~~|
|B<br>~~a~~|2.5||2.7|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~|0.45<br>||0.7<br>|
|F<br>~~Ge~~|0.75<br>~~Ge~~|~~Ge~~|1<br>~~Ge~~|
|F1<br>~~Ge~~|1.15<br>~~Ge~~|~~Ge~~|1.70<br>~~Ge~~|
|F2<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95||5.2|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~|10<br>||10.4<br>|
|L2<br>~~Ge~~|~~Ge~~|16<br>~~Ge~~|~~Ge~~|
|L3<br>~~Ge~~|28.6<br>~~Ge~~|~~Ge~~|30.6<br>~~Ge~~|
|L4<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9||3.6|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9||9.3|
|Dia<br>~~a~~|3||3.2|



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**Package mechanical data** 

## **Figure 25. TO-220FP drawing** 

**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

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**Package mechanical data** 

**Figure 26. TO-220 type A drawing** 

**==> picture [64 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 12. DPAK (TO-252) tape and reel mechanical data** 

|**Tape**<br>~~ee~~|**Tape**<br>~~ee~~|**Tape**<br>~~ee~~|**Reel**<br>~~ee~~|**Reel**<br>~~ee~~|**Reel**<br>~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~ee~~<br>~~a~~|**mm**<br>~~ee~~<br>~~ee~~<br>~~ee~~||**Dim.**<br>~~ee~~<br>~~ee~~|**mm**<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~a~~|**Max.**<br>~~aee~~||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|6.8<br>|7<br>~~ee~~|A<br>~~ee~~|~~ee~~|330<br>~~ee~~|
|B0<br>~~a~~|10.4<br>~~ee~~|10.6<br>~~ee~~|B<br>~~ee~~|1.5<br>~~ee~~|~~ee~~|
|B1<br>~~a~~||12.1|C|12.8|13.2|
|D<br>~~a~~|1.5|1.6|D|20.2||
|D1<br>~~a~~|1.5||G|16.4|18.4|
|E<br>~~a~~|1.65|1.85|N|50||
|F<br>~~a~~|7.4|7.6|T||22.4|
|K0<br>~~a~~|2.55|2.75||||
|P0<br>~~a~~|3.9|4.1|Base qty.||2500|
|P1<br>~~a~~<br>~~a~~|7.9<br><br>|8.1<br><br>~~ee~~<br>|Bulk qty.||2500|
|P2<br>~~ee~~<br>~~a~~|1.9<br>~~ee~~<br>|2.1<br>~~ee~~<br>~~ee~~<br>||||
|R<br>~~a ee~~|40<br>~~ee~~|~~ee~~<br>~~ee~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|0.35<br>~~ee~~||||
|W<br>~~es~~|15.7<br>~~es~~|16.3<br>~~es~~||||



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**Packaging mechanical data** 

## **Figure 27. Tape for DPAK (TO-252)** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>o i e ; —4 |<br>| / O0O0 G8G 0CO0 8 G00 E<br>F<br>K0 W<br>B1 B0<br>on e |||| e |] ®]]<br>ena olo l o i a i c te<br>| Tl LT<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 —_—><br>User direction of feed<br>R<br>S e ca l e alice<br>a Bending radius<br>ad<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 28. Reel for DPAK (TO-252)** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


19/21 

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**Revision history** 

## **6 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**||**Changes**|
|---|---|---|---|
|15-May-2013|1|First release.||



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DocID024645 Rev 1 

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## Links

- [View this product on Novapart](https://novapart.co/products/STD13NM60ND/power-mosfet-n-channel-600-v-11-a-038-ohm-to-252)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/std13nm60nd/mosfet-n-ch-600v-11a-109w-to-252/dp/3129734)
---

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